LFBGA Other Function Memory ICs 2,068

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
TH50VSF3682AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	4194304 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B69		3.3 V	1.4 mm	9 mm	Not Qualified	67108864 bit	2.7 V	USER CONFIGURABLE AS 8M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 512K X 16 OR 1M X 8	e0		12 mm	80 ns
TH50VSF1481AASB	Toshiba	MEMORY CIRCUIT	OTHER	65	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	1048576 words	3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA65,10X12,32	Other Memory ICs	.8 mm	85 Cel	1MX16	1M	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B65		3.6 V	1.4 mm	9 mm	Not Qualified	16777216 bit	2.7 V	SRAM IS ORGANISED AS 128K X 16	e0		12 mm	100 ns
MC-24212361F9-D95X-CD5	Renesas Electronics	MEMORY CIRCUIT	OTHER	85	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B85		2.1 V	1.21 mm	8 mm	Not Qualified	67108864 bit	1.8 V	SRAM ORGANISATION IS 1M X 16; SRAM SUPPLY VOLTAGE IS 2.6 TO 3.1V			11 mm
MC-22222361F9-E85X-CD5	Renesas Electronics	MEMORY CIRCUIT	OTHER	85	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	BALL	ASYNCHRONOUS		4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B85		1.95 V	1.21 mm	8 mm	Not Qualified	67108864 bit	1.65 V	SRAM IS ORGANISED AS 512K X 16 AND OPERATES AT 2.7V TO 3.1V SUPPLY			11 mm
MC-22212361F9-D80X-CD5	Renesas Electronics	MEMORY CIRCUIT	OTHER	85	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B85		2.1 V	1.21 mm	8 mm	Not Qualified	67108864 bit	1.8 V	SRAM ORGANISATION IS 256K X 16; SRAM SUPPLY VOLTAGE IS 2.7 TO 3.1V			11 mm
MC-24212361F9-E95X-CD5	Renesas Electronics	MEMORY CIRCUIT	OTHER	85	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B85		1.95 V	1.21 mm	8 mm	Not Qualified	67108864 bit	1.65 V	SRAM ORGANISATION IS 1M X 16; SRAM SUPPLY VOLTAGE IS 2.6 TO 3.1V			11 mm
MC-22212361F9-E85X-CD5	Renesas Electronics	MEMORY CIRCUIT	OTHER	85	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B85		1.95 V	1.21 mm	8 mm	Not Qualified	67108864 bit	1.65 V	SRAM ORGANISATION IS 256K X 16; SRAM SUPPLY VOLTAGE IS 2.7 TO 3.1V			11 mm
MC-24212361F9-E85X-CD5	Renesas Electronics	MEMORY CIRCUIT	OTHER	85	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B85		1.95 V	1.21 mm	8 mm	Not Qualified	67108864 bit	1.65 V	SRAM ORGANISATION IS 1M X 16; SRAM SUPPLY VOLTAGE IS 2.6 TO 3.1V			11 mm
MC-24212361F9-D85X-CD5	Renesas Electronics	MEMORY CIRCUIT	OTHER	85	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B85		2.1 V	1.21 mm	8 mm	Not Qualified	67108864 bit	1.8 V	SRAM ORGANISATION IS 1M X 16; SRAM SUPPLY VOLTAGE IS 2.6 TO 3.1V			11 mm
MC-22222361F9-D80X-CD5	Renesas Electronics	MEMORY CIRCUIT	OTHER	85	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	BALL	ASYNCHRONOUS		4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B85		2.1 V	1.21 mm	8 mm	Not Qualified	67108864 bit	1.8 V	SRAM IS ORGANISED AS 512K X 16 AND OPERATES AT 2.7V TO 3.1V SUPPLY			11 mm
KAJ000A30M-FLLL	Samsung	MEMORY CIRCUIT	OTHER	111	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	45 mA	4194304 words	2.9	PSRAM+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA111,12X13,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B111		3.1 V	1.4 mm	10 mm	Not Qualified	67108864 bit	2.7 V	SRAM IS ORGANISED AS 512K X 16		.00002 Amp	11 mm	70 ns
KAG00E007M-FGGV0	Samsung	MEMORY CIRCUIT	OTHER	107	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B107		1.95 V	1.4 mm	10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 4M X 16 X 4 BANKS; NAND FLASH SUPPLY 1.7 V TO 1.95 V			13 mm
KAB04D100M-TNGP0	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80		3.1 V	1.4 mm	8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16			12 mm
KBE00S009M-D4110	Samsung	MEMORY CIRCUIT	OTHER	137	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B137	2	1.95 V	1.43 mm	12 mm	Not Qualified	268435456 bit	1.7 V	NAND FLASH IS ORGANIZED AS 128M X 8; NAND FLASH OPERATES AT 2.5V TO 2.9V SUPPLY	e1		14 mm
KAD070300B-TNNL0	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B69		3.1 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	UTRAM IS ORGANIZED AS 2M X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 8M X 8			11.6 mm
KBB05B400M-F4020	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B80		3.1 V	1.4 mm	8 mm	Not Qualified	268435456 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 4M X 16			13 mm
KBE00D002M-F4070	Samsung	MEMORY CIRCUIT	OTHER	137	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B137		1.95 V	1.4 mm	10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 2M X 16 X 4 BANKS			13 mm
KBE00F005A-D4110	Samsung	MEMORY CIRCUIT	OTHER	137	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	20 mA	8388608 words	1.8	FLASH+SDRAM	2.7	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel	8MX32	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B137	2	1.95 V	1.4 mm	10.5 mm	Not Qualified	268435456 bit	1.7 V	NAND FLASH IS ORGANIZED AS 64M X 8; NAND FLASH OPERATES AT 2.5V TO 2.9V SUPPLY	e1	.001 Amp	13 mm	30 ns
K5Q5764G0M-F018	Samsung	MEMORY CIRCUIT	OTHER	111	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	45 mA	16777216 words	1.8	FLASH+PSRAM	1.8/3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA111,12X13,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B111		1.95 V	1.4 mm	10 mm	Not Qualified	268435456 bit	1.7 V	UTRAM IS ORGANIZED AS 4M X 16		.00005 Amp	11 mm	85 ns
KAB01D100M-TLGP0	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80		3.1 V	1.4 mm	8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16			12 mm
KAD080300B-TNNL0	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B69		3.1 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	UTRAM IS ORGANIZED AS 2M X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 8M X 8			11.6 mm
KBB06B400M-F4020	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B80		3.1 V	1.4 mm	8 mm	Not Qualified	268435456 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 4M X 16			13 mm
KBC00B7A0M-F4050	Samsung	MEMORY CIRCUIT	OTHER	111	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		16777216 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B111		3.1 V	1.4 mm	11 mm	Not Qualified	268435456 bit	2.7 V	SRAM IS ORGANIZED AS 512K X 16; UTRAM IS ORGANIZED AS 4M X 16			11 mm
KBB06A300M-T4020	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80		3.1 V	1.4 mm	8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16			12 mm
KAD100300B-TLLL0	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B69		3.1 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	UTRAM IS ORGANIZED AS 2M X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 8M X 8			11.6 mm
KAL00B00BM-FGXX0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B127		1.95 V	1.4 mm	10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 4M X 8 X 4 BANKS; NAND FLASH SUPPLY 1.7 V TO 1.95 V			12 mm
KAD050300B-TNNL0	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B69		3.1 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	UTRAM IS ORGANIZED AS 2M X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 8M X 8			11.6 mm
KBB05A500M-T4020	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80		3.1 V	1.4 mm	8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 4M X 16			13 mm
KAA00B606A-TGPX0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B127		1.95 V	1.4 mm	10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 2M X 16 X 4 BANKS; UTRAM IS ORGANIZED AS 4M X 16			12 mm
KAB02D100M-TLGP0	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80		3.1 V	1.4 mm	8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16			12 mm
KAA00B209M-TGQX0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B127		1.95 V	1.4 mm	10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 2M X 16 X 4 BANKS; UTRAM IS ORGANIZED AS 2M X 16			12 mm
KAB01D100M-TNGP0	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80		3.1 V	1.4 mm	8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16			12 mm
KBA0201A0M-T401	Samsung	MEMORY CIRCUIT	INDUSTRIAL	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	4194304 words	3	FLASH+PSRAM+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA80,9X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B80		3.3 V	1.4 mm	10 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 2M X 16 UTRAM AND 512K X 16 SRAM		.000006 Amp	11 mm	85 ns
KAD060300B-TLLL0	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B69		3.1 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	UTRAM IS ORGANIZED AS 2M X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 8M X 8			11.6 mm
KAL00B00BM-FGXV0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B127		1.95 V	1.4 mm	10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 4M X 8 X 4 BANKS; NAND FLASH SUPPLY 1.7 V TO 1.95 V			12 mm
KBB06A500M-T4020	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80		3.1 V	1.4 mm	8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 4M X 16			13 mm
KAA00B606A-TGPV0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B127		1.95 V	1.4 mm	10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 2M X 16 X 4 BANKS; UTRAM IS ORGANIZED AS 4M X 16			12 mm
KAA00B209M-TGSX0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B127		1.95 V	1.4 mm	10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 2M X 16 X 4 BANKS; UTRAM IS ORGANIZED AS 2M X 16			12 mm
K5D5657DCM-F0150	Samsung	MEMORY CIRCUIT	OTHER	107	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	1.8			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	32MX8	32M	-25 Cel		BOTTOM	R-PBGA-B107		1.95 V	1.4 mm	10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 4M X 16 X 4 BANKS; NAND FLASH SUPPLY 2.4 V TO 2.9 V			13 mm
KAB04D100M-TLGP0	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80		3.1 V	1.4 mm	8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16			12 mm
KAB03D100M-TLGP0	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80		3.1 V	1.4 mm	8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16			12 mm
KAD080300B-TLLL0	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B69		3.1 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	UTRAM IS ORGANIZED AS 2M X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 8M X 8			11.6 mm
KBF080800M-D4080	Samsung	MEMORY CIRCUIT	OTHER	115	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B115	2	1.9 V	1.4 mm	8 mm	Not Qualified	134217728 bit	1.7 V	UTRAM IS ORGANIZED AS 4M X 16; UTRAM OPERATES AT 2.5V TO 2.7V SUPPLY	e1		12 mm
KAG00H008M-FGG20	Samsung	MEMORY CIRCUIT	OTHER	107	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	3			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	32MX8	32M	-25 Cel		BOTTOM	R-PBGA-B107		3.6 V	1.4 mm	10.5 mm	Not Qualified	268435456 bit	2.7 V	SDRAM IS ORGANIZED AS 4M X 16 X 4 BANKS; NAND FLASH SUPPLY 2.7 V TO 3.3 V			13 mm
KBA0401A0M-T401	Samsung	MEMORY CIRCUIT	INDUSTRIAL	80	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	4194304 words	3	FLASH+PSRAM+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA80,9X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B80		3.3 V	1.4 mm	10 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 2M X 16 UTRAM AND 512K X 16 SRAM		.000006 Amp	11 mm	85 ns
KAA00B209M-TGSV0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B127		1.95 V	1.4 mm	10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 2M X 16 X 4 BANKS; UTRAM IS ORGANIZED AS 2M X 16			12 mm
KAA00B209M-TGQV0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B127		1.95 V	1.4 mm	10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 2M X 16 X 4 BANKS; UTRAM IS ORGANIZED AS 2M X 16			12 mm
KAD090300B-TLLL0	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B69		3.1 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	UTRAM IS ORGANIZED AS 2M X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 8M X 8			11.6 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.