LFBGA Other Function Memory ICs 2,068

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
M36DR432CA85ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words	2	FLASH+SRAM	2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66		2.1 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.9 V	ALSO CONTAINS 256K X 16 SRAM	e1			.00001 Amp	12 mm	85 ns
M36W832BE85ZA6S	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANISED AS 512K X 16	e0			.00002 Amp	12 mm	85 ns
M36W416BG85ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	1MX16	1M	-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66		3.3 V	1.4 mm	8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 256K X 16	e1			.00001 Amp	12 mm	85 ns
NAND01GW3M2CZC5F	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	137	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		134217728 words	3	FLASH+SDRAM	3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel	128MX8	128M	-30 Cel		BOTTOM	R-PBGA-B137		3.6 V	1.4 mm	10.5 mm	Not Qualified	1073741824 bit	2.5 V	LPSDRAM IS ORGANISED AS 16M X 32		40	260		13 mm
NAND01GW3M2BZC5F	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	137	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		134217728 words	3	FLASH+SDRAM	3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel	128MX8	128M	-30 Cel		BOTTOM	R-PBGA-B137		3.6 V	1.4 mm	10.5 mm	Not Qualified	1073741824 bit	2.5 V	LPSDRAM IS ORGANISED AS 16M X 32		40	260		13 mm
M36WT864BF100ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	96	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words				16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B96		2.2 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.65 V	SRAM ORGANISATION IS 512K X 16					14 mm
M36DR432B100ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	THE DEVICE ALSO CONTAINS A 4 MBIT (256K X16) SRAM	e0				12 mm	100 ns
M36W432BG70ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		3.3 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM ORGANISED AS 256K X 16	e0			.00001 Amp	12 mm	70 ns
M36LLR8860M1ZAQF	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	52 mA	16777216 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88		1.95 V	1.4 mm	8 mm	Not Qualified	268435456 bit	1.7 V	PSRAM ALSO ORGANIZED AS 4M X 16	e1			.00011 Amp	10 mm
M76DW62000A70Z	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	4194304 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B73		3.6 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	STATIC RAM IS ORGANIZED AS 512K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8				.0001 Amp	11.6 mm	70 ns
M36W416BG85ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	1MX16	1M	-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66		3.3 V	1.4 mm	8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 256K X 16	e1			.00001 Amp	12 mm	85 ns
M36WT864TF85ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	96	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	4194304 words	1.8	FLASH+SRAM	1.8/2,3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA96,8X14,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B96		2.2 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.65 V	SRAM ORGANISATION IS 512K X 16	e0			.00002 Amp	14 mm	85 ns
M36DR232A100ZA6C	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	THE DEVICE ALSO CONTAINS A 2 MBIT (128K X16) SRAM	e0			.000025 Amp	12 mm	100 ns
M36W832B100ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B66		3.3 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 512K X 16 SRAM					12 mm
M36W216T85ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	1MX16	1M	0 Cel		BOTTOM	R-PBGA-B66		3.3 V	1.4 mm	8 mm	Not Qualified	16777216 bit	2.7 V	ALSO CONTAINS 128K X 16 SRAM					12 mm
M36W432B70ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B66		3.3 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16	e1				12 mm	70 ns
M36W832TE85ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANISED AS 512K X 16	e0			.00002 Amp	12 mm	85 ns
M36DR432BD10ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	26 mA	2097152 words	1.8	FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	SRAM IS ORGANIZED AS 256K X 16	e0			.00001 Amp	12 mm	100 ns
M36DR432AD10ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	26 mA	2097152 words	1.8	FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	SRAM IS ORGANIZED AS 256K X 16	e0			.00001 Amp	12 mm	100 ns
M36WT864BF85ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	96	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	4194304 words	1.8	FLASH+SRAM	1.8/2,3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA96,8X14,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B96		2.2 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.65 V	SRAM ORGANISATION IS 512K X 16	e0			.00002 Amp	14 mm	85 ns
M36W416TG85ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	1MX16	1M	0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66		3.3 V	1.4 mm	8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 256K X 16	e1			.00001 Amp	12 mm	85 ns
M36DR232B100ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words		FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	THE DEVICE ALSO CONTAINS A 2 MBIT (128K X16) SRAM	e0			.000025 Amp	12 mm	100 ns
M36DR432BD12ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	26 mA	2097152 words	1.8	FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	SRAM IS ORGANIZED AS 256K X 16	e0			.00001 Amp	12 mm	120 ns
M36WT864TF70ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	96	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	4194304 words	1.8	FLASH+SRAM	1.8/2,3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA96,8X14,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B96		2.2 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.65 V	SRAM ORGANISATION IS 512K X 16	e0			.00002 Amp	14 mm	70 ns
M36W432TG70ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66		3.3 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM ORGANISED AS 256K X 16	e0			.00001 Amp	12 mm	70 ns
M36LLR8860T1ZAQ	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	52 mA	16777216 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel	TIN LEAD	BOTTOM	R-PBGA-B88		1.95 V	1.4 mm	8 mm	Not Qualified	268435456 bit	1.7 V	PSRAM ALSO ORGANIZED AS 4M X 16	e0			.00011 Amp	10 mm
M36WT864BF10ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	96	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	4194304 words	1.8	FLASH+SRAM	1.8/2,3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA96,8X14,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B96		2.2 V	1.4 mm	8 mm	Not Qualified	67108864 bit	1.65 V	SRAM IS ORGANIZED AS 512K X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e0			.00002 Amp	14 mm	100 ns
M36W216TI85ZA6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	1MX16	1M	-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66		3.3 V	1.4 mm	8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 128KBIT X 16	e1			.00001 Amp	12 mm	85 ns
S75WS256PEFJF5VS2	Infineon Technologies	MEMORY CIRCUIT	OTHER	115	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B115	3	1.95 V	1.4 mm	9 mm	Not Qualified	268435456 bit	1.7 V		e1	40	260		12 mm
S75WS256PEFJF5VS3	Infineon Technologies	MEMORY CIRCUIT	OTHER	115	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B115	3	1.95 V	1.4 mm	9 mm	Not Qualified	268435456 bit	1.7 V		e1	40	260		12 mm
S75WS256PEFJF5VS0	Infineon Technologies	MEMORY CIRCUIT	OTHER	115	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B115	3	1.95 V	1.4 mm	9 mm	Not Qualified	268435456 bit	1.7 V		e1	40	260		12 mm
TH50VSF2481AASB	Toshiba	MEMORY CIRCUIT	OTHER	65	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	1048576 words	3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA65,10X12,32	Other Memory ICs	.8 mm	85 Cel	1MX16	1M	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B65		3.6 V	1.4 mm	9 mm	Not Qualified	16777216 bit	2.7 V	SRAM IS ORGANISED AS 256K X 16	e0				12 mm	100 ns
TH50VSF2583AASB	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words	3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B69		3.6 V	1.4 mm	9 mm	Not Qualified	33554432 bit	2.7 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 256K X 16 OR 512K X 8	e0				12 mm	70 ns
TH50VSF3683AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	4194304 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B69		3.3 V	1.4 mm	9 mm	Not Qualified	67108864 bit	2.7 V	USER CONFIGURABLE AS 8M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 512K X 16 OR 1M X 8	e0				12 mm	80 ns
TH50VSF3681AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	4194304 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B69		3.3 V	1.4 mm	9 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 8M SRAM MEMORY	e0				12 mm	90 ns
TH50VSF4682AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	4194304 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B69		3.1 V	1.4 mm	10 mm	Not Qualified	67108864 bit	2.7 V	USER CONFIGURABLE AS 8M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 1M X 16 OR 2M X 8	e0				12 mm	80 ns
TH50VPN5640EBSB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	4194304 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B69		3.1 V	1.4 mm	9 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 32MBIT PSEUDO SRAM					12 mm	85 ns
TH50VSF2581AASB	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words	3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B69		3.6 V	1.4 mm	9 mm	Not Qualified	33554432 bit	2.7 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 256 X 16 OR 512K X 8	e0				12 mm	90 ns
TH50VSF4683AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	4194304 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B69		3.1 V	1.4 mm	10 mm	Not Qualified	67108864 bit	2.7 V	USER CONFIGURABLE AS 8M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 1M X 16 OR 2M X 8	e0				12 mm	80 ns
TH50VSF2582AASB	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words	3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B69		3.6 V	1.4 mm	9 mm	Not Qualified	33554432 bit	2.7 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 256K X 16 OR 512K X 8	e0				12 mm	70 ns
TH50VSF3580AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B69		3.3 V	1.4 mm	9 mm	Not Qualified	33554432 bit	2.67 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 512K X 16 OR 1M X 8	e0				12 mm	90 ns
TH50VSF3581AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B69		3.3 V	1.4 mm	9 mm	Not Qualified	33554432 bit	2.67 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 512K X 16 OR 1M X 8	e0				12 mm	90 ns
TH50VSF2480AASB	Toshiba	MEMORY CIRCUIT	OTHER	65	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	1048576 words	3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA65,10X12,32	Other Memory ICs	.8 mm	85 Cel	1MX16	1M	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B65		3.6 V	1.4 mm	9 mm	Not Qualified	16777216 bit	2.7 V	SRAM IS ORGANISED AS 256K X 16	e0				12 mm	100 ns
TH50VSF1480AASB	Toshiba	MEMORY CIRCUIT	OTHER	65	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	1048576 words	3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA65,10X12,32	Other Memory ICs	.8 mm	85 Cel	1MX16	1M	-20 Cel		BOTTOM	R-PBGA-B65		3.6 V	1.4 mm	9 mm	Not Qualified	16777216 bit	2.7 V	SRAM IS ORGANISED AS 128K X 16					12 mm	100 ns
TH50VSF3680AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	4194304 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B69		3.3 V	1.4 mm	9 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 8M SRAM MEMORY	e0				12 mm	90 ns
TH50VSF3583AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B69		3.3 V	1.4 mm	9 mm	Not Qualified	33554432 bit	2.67 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 512K X 16 OR 1M X 8	e0				12 mm	80 ns
TH50VSF3582AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B69		3.3 V	1.4 mm	9 mm	Not Qualified	33554432 bit	2.67 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 512K X 16 OR 1M X 8	e0				12 mm	80 ns
TH50VSF2580AASB	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words	3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B69		3.6 V	1.4 mm	9 mm	Not Qualified	33554432 bit	2.7 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 256 X 16 OR 512K X 8	e0				12 mm	90 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.