SOP Other Function Memory ICs 275

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time
EPCQ4ASI8N	Intel	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	524288 words	3			8	SMALL OUTLINE	SOP8,.25		20	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G8	3	3.6 V	1.75 mm	100 MHz	3.9 mm		4194304 bit	2.7 V		e3	30	260	NOR TYPE	.00005 Amp	4.9 mm
EPCQ128ASI16N	Intel	MEMORY CIRCUIT	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	20 mA	16777216 words	3			8	SMALL OUTLINE	SOP16,.4		20	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G16	3	3.6 V	2.65 mm	100 MHz	7.5 mm		134217728 bit	2.7 V		e3	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00006 Amp	10.3 mm
CY15B102Q-SXET	Infineon Technologies	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING		SYNCHRONOUS	5 mA	262144 words	3.3		2.5/3.3	8	SMALL OUTLINE	SOP8,.3	SRAMs		1.27 mm	125 Cel		256KX8	256K	-40 Cel	PURE TIN	DUAL		R-PDSO-G8	3	3.6 V	2.03 mm		5.23 mm	Not Qualified	2097152 bit	2 V				260		.00075 Amp	5.28 mm
DS2401Z/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		64 words	5		3/5	1	SMALL OUTLINE	SOT-223	Other Memory ICs		2.3 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-G4	1	6 V	1.8 mm		3.5 mm	Not Qualified	64 bit	2.8 V		e0					6.5 mm
DS2401Z+T&R	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		64 words	5		3/5	1	SMALL OUTLINE	SOT-223	Other Memory ICs		2.3 mm	85 Cel		64X1	64	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G4	1	6 V	1.8 mm		3.5 mm	Not Qualified	64 bit	2.8 V		e3	30	260			6.5 mm
CY15B102Q-SXE	Infineon Technologies	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING		SYNCHRONOUS	5 mA	262144 words	3.3		2.5/3.3	8	SMALL OUTLINE	SOP8,.3	SRAMs		1.27 mm	125 Cel		256KX8	256K	-40 Cel	PURE TIN	DUAL		R-PDSO-G8	3	3.6 V	2.03 mm		5.23 mm	Not Qualified	2097152 bit	2 V			30	260		.00075 Amp	5.28 mm
DS2401Z	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		64 words	5		3/5	1	SMALL OUTLINE	SOT-223	Other Memory ICs		2.3 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-G4	1	6 V	1.8 mm		3.5 mm	Not Qualified	64 bit	2.8 V		e0	20	240			6.5 mm
DS2401Z+	Analog Devices	MEMORY CIRCUIT	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		64 words	5		3/5	1	SMALL OUTLINE	SOT-223	Other Memory ICs		2.3 mm	85 Cel		64X1	64	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G4	1	6 V	1.8 mm		3.5 mm	Not Qualified	64 bit	2.8 V		e3	30	260			6.5 mm
EPCQ64ASI16N	Intel	MEMORY CIRCUIT	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	8388608 words	3			8	SMALL OUTLINE	SOP16,.4		20	1.27 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G16	3	3.6 V	2.65 mm	100 MHz	7.5 mm		67108864 bit	2.7 V		e3	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	10.3 mm
ST25DV64K-IER6S3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		65536 words	3.3			1	SMALL OUTLINE				1.27 mm	85 Cel		64KX1	64K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm		65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED			4.9 mm
47L16-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words		EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm		3.9 mm		16384 bit	2.7 V		e3	40	260			4.9 mm	400 ns
ST25DV16K-IER6S3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		16384 words	3.3			1	SMALL OUTLINE				1.27 mm	85 Cel		16KX1	16K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm		16384 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED			4.9 mm
MB85RS256BPNF-G-JNE1	Fujitsu	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	6 mA	32768 words	3.3		3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-G8		3.6 V	1.75 mm		3.9 mm	Not Qualified	262144 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	5.05 mm
ST25DV04K-IER6S3	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		4096 words	3.3			1	SMALL OUTLINE				1.27 mm	85 Cel		4KX1	4K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm		4096 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED			4.9 mm
M24SR64-YMN6T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		8192 words	3.3			8	SMALL OUTLINE				1.27 mm	85 Cel		8KX8	8K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm		65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			4.9 mm
47L16-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words		EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	125 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm		3.9 mm		16384 bit	2.7 V		e3	40	260			4.9 mm	400 ns
FM33256B-G	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		32768 words		EEPROM+FLASH		8	SMALL OUTLINE	SOP14,.23			1.27 mm	85 Cel		32KX8	32K	-40 Cel	PURE TIN	DUAL		R-PDSO-G14	3	3.6 V	1.727 mm		3.8985 mm		262144 bit	2.7 V			30	260			8.6483 mm
47L16T-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words		EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm		3.9 mm		16384 bit	2.7 V		e3	40	260			4.9 mm	400 ns
FM33256B-GTR	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		32768 words		EEPROM+FLASH		8	SMALL OUTLINE	SOP14,.23			1.27 mm	85 Cel		32KX8	32K	-40 Cel	PURE TIN	DUAL		R-PDSO-G14	3	3.6 V	1.727 mm		3.8985 mm		262144 bit	2.7 V			30	260			8.6483 mm
EPCQ32ASI8N	Intel	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	4194304 words	3			8	SMALL OUTLINE	SOP8,.25		20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel		DUAL		R-PDSO-G8		3.6 V	1.75 mm	100 MHz	3.9 mm		33554432 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	4.9 mm
47L64-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		8192 words	3.3	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		8KX8	8K	-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.75 mm		3.9 mm		65536 bit	2.7 V							4.9 mm	550 ns
FM31256-GTR	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		32768 words	3			8	SMALL OUTLINE	SOP14,.25			1.27 mm	85 Cel		32KX8	32K	-40 Cel	TIN	DUAL		R-PDSO-G14	3	5.5 V	1.727 mm		3.8985 mm		262144 bit	2.7 V	0.9ms TAA available @400khz and 3ms TAA available @ 100 khz	e3					8.6483 mm	550 ns
47L16T-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words		EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	125 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm		3.9 mm		16384 bit	2.7 V		e3	40	260			4.9 mm	400 ns
MB85RS256BPNF-G-JNERE1	Fujitsu	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	6 mA	32768 words	3.3		3.3	8	SMALL OUTLINE	SOP8,.25	SRAMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-G8		3.6 V	1.75 mm		3.9 mm	Not Qualified	262144 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	5.05 mm
MR256A08BSO35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS	65 mA	32768 words	3.3		3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs		1.25 mm	70 Cel		32KX8	32K	0 Cel		DUAL		R-PDSO-G32		3.6 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.007 Amp	20.726 mm	35 ns
47C16-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words	5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm		3.9 mm		16384 bit	4.5 V		e3	40	260			4.9 mm	400 ns
CY8C20110-SX2I	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words	3			1	SMALL OUTLINE				1.27 mm	85 Cel		2KX1	2K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G16	3	5.25 V	1.727 mm		3.9 mm	Not Qualified	2048 bit	2.4 V	SRAM IS ORGANISED AS 512MB	e4	40	260			9.893 mm
MR256A08BSO35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS	65 mA	32768 words	3.3		3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs		1.25 mm	70 Cel		32KX8	32K	0 Cel		DUAL		R-PDSO-G32		3.6 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.007 Amp	20.726 mm	35 ns
47C16T-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words	5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm		3.9 mm		16384 bit	4.5 V		e3	40	260			4.9 mm	400 ns
AT88SC0104CA-SH-T	Microchip Technology	CRYPTO MEMORY		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		128 words				8	SMALL OUTLINE	SOP8,.25			1.27 mm	85 Cel		128X8	128	-40 Cel	MATTE TIN	DUAL		R-PDSO-G8		3.6 V	1.75 mm		3.9 mm		1024 bit	2.7 V		e3					4.9 mm
CY15B104QSN-108SXIES	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		524288 words	3			8	SMALL OUTLINE				1.27 mm	85 Cel		512KX8	512K	-40 Cel		DUAL		R-PDSO-G8		3.6 V	2.03 mm		5.23 mm		4194304 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED			5.23 mm
47C04T-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words	5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm		3.9 mm		4096 bit	4.5 V		e3	40	260			4.9 mm	400 ns
47L04-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words		EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm		3.9 mm		4096 bit	2.7 V		e3	40	260			4.9 mm	400 ns
CY15B256Q-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		32768 words	3.3			8	SMALL OUTLINE				1.27 mm	85 Cel		32KX8	32K	-40 Cel	PURE TIN	DUAL		R-PDSO-G8	3	3.6 V	1.727 mm		3.898 mm		262144 bit	2 V				260			4.889 mm
47C04-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words	5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm		3.9 mm		4096 bit	4.5 V		e3	40	260			4.9 mm	400 ns
MR256A08BCSO35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS	75 mA	32768 words	3.3		3.3	8	SMALL OUTLINE	SOP32,.4	SRAMs		1.25 mm	85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-G32		3.6 V	2.54 mm		7.505 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.007 Amp	20.726 mm	35 ns
AT88SC25616C-SU	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		32768 words				8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		32KX8	32K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.75 mm		3.9 mm		262144 bit	2.7 V		e3					4.925 mm	35 ns
47C04-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words	5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm		3.9 mm		4096 bit	4.5 V		e3	40	260			4.9 mm	400 ns
47C04T-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words	5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm		3.9 mm		4096 bit	4.5 V		e3	40	260			4.9 mm	400 ns
M24SR64-YMN8T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		65536 words				1	SMALL OUTLINE				1.27 mm	105 Cel		64KX1	64K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm		65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			4.9 mm
MB85AS4MTPF-G-BCERE1	Fujitsu	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		524288 words	3.3			8	SMALL OUTLINE	SOP8,.3			1.27 mm	85 Cel		512KX8	512K	-40 Cel		DUAL		R-PDSO-G8		3.6 V	1.73 mm		5.3 mm		4194304 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED			5.85 mm
AT88SC0104CA-SH	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		128 words			3/3.3	8	SMALL OUTLINE	SOP8,.23	EEPROMs		1.27 mm	85 Cel		128X8	128	-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.75 mm		3.9 mm	Not Qualified	1024 bit	2.7 V							4.9 mm	250 ns
AT88SC25616C-SU-T	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		32768 words				8	SMALL OUTLINE	SOP8,.23			1.27 mm	85 Cel		32KX8	32K	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G8		5.5 V	1.75 mm		3.9 mm		262144 bit	2.7 V		e3					4.925 mm	35 ns
MR10Q010SCR	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	220 mA	131072 words	3.3		1.8,3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs		1.27 mm	70 Cel		128KX8	128K	0 Cel		DUAL		R-PDSO-G16		3.6 V	2.64 mm		7.52 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		.005 Amp	10.34 mm
AT88SC018-SU-CM-T	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		4096 words				1	SMALL OUTLINE	SOP8,.25			1.27 mm	85 Cel		4KX1	4K	-40 Cel	MATTE TIN	DUAL		R-PDSO-G8		3.6 V	1.75 mm		3.9 mm	Not Qualified	4096 bit	2.7 V		e3					4.925 mm
DS2405Z	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		64 words			3/5	1	SMALL OUTLINE	SOT-223	SRAMs		2.3 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-G4	1	6 V	1.8 mm		3.5 mm	Not Qualified	64 bit	2.8 V		e0		245			6.5 mm
DS2405Z+	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		64 words			3/5	1	SMALL OUTLINE	SOT-223	SRAMs		2.3 mm	85 Cel		64X1	64	-40 Cel	MATTE TIN	DUAL		R-PDSO-G4	1	6 V	1.8 mm		3.5 mm	Not Qualified	64 bit	2.8 V		e3	30	260			6.5 mm
CY8C20142-SX1I	Cypress Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words	3			1	SMALL OUTLINE				1.27 mm	85 Cel		2KX1	2K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G8	3	5.25 V	1.727 mm		3.9 mm	Not Qualified	2048 bit	2.4 V	SRAM IS ORGANISED AS 512MB	e4	20	260			4.889 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.