SOP Other Function Memory ICs 275

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
M30042040108X0ISAY	Renesas Electronics	MEMORY CIRCUIT		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		3		8	SMALL OUTLINE	SOP8,.3		1.27 mm	85 Cel		512KX8	512K		-40 Cel	TIN	DUAL	R-PDSO-G8	3	3.6 V	2.16 mm	5.18 mm		4194304 bit	2.7 V	e3		260		5.23 mm
UPD485505G-27	Renesas Electronics		COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		80 mA			5	5		SMALL OUTLINE	SOP24,.5	Other Memory ICs	1.27 mm	70 Cel					0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24					Not Qualified			e0			.08 Amp		18 ns
UPD42832GU-15L	Renesas Electronics		COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		40 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28					Not Qualified	262144 bit		e0			.0001 Amp		150 ns
UPD42832G-12	Renesas Electronics		COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28					Not Qualified	262144 bit		e0			.001 Amp		120 ns
M30082040108X0ISAY	Renesas Electronics	MEMORY CIRCUIT		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words		3		8	SMALL OUTLINE	SOP8,.3		1.27 mm	85 Cel		1MX8	1M		-40 Cel	TIN	DUAL	R-PDSO-G8	3	3.6 V	2.16 mm	5.18 mm		8388608 bit	2.7 V	e3		260		5.23 mm
M30162040108X0ISAY	Renesas Electronics	MEMORY CIRCUIT		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		3		8	SMALL OUTLINE	SOP8,.3		1.27 mm	85 Cel		2MX8	2M		-40 Cel	TIN	DUAL	R-PDSO-G8	3	3.6 V	2.16 mm	5.18 mm		16777216 bit	2.7 V	e3		260		5.23 mm
UPD41102G-1S	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		90 mA			5	5		SMALL OUTLINE	SOP24,.5	Other Memory ICs	1.27 mm	70 Cel					-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24					Not Qualified			e0			.09 Amp		27 ns
M30042040054X0ISAY	Renesas Electronics	MEMORY CIRCUIT		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		3		8	SMALL OUTLINE	SOP8,.3		1.27 mm	85 Cel		512KX8	512K		-40 Cel	TIN	DUAL	R-PDSO-G8	3	3.6 V	2.16 mm	5.18 mm		4194304 bit	2.7 V	e3		260		5.23 mm
M10162040108X0ISAY	Renesas Electronics	MEMORY CIRCUIT		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		1.8		8	SMALL OUTLINE	SOP8,.3		1.27 mm	85 Cel		2MX8	2M		-40 Cel	TIN	DUAL	R-PDSO-G8	3	2 V	2.16 mm	5.18 mm		16777216 bit	1.71 V	e3		260		5.23 mm
UPD42280GU-40	Renesas Electronics		COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		90 mA			5	5		SMALL OUTLINE	SOP28,.45	Other Memory ICs	1.27 mm	70 Cel					-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28					Not Qualified			e0					30 ns
M10082040054X0ISAY	Renesas Electronics	MEMORY CIRCUIT		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words		1.8		8	SMALL OUTLINE	SOP8,.3		1.27 mm	85 Cel		1MX8	1M		-40 Cel	TIN	DUAL	R-PDSO-G8	3	2 V	2.16 mm	5.18 mm		8388608 bit	1.71 V	e3		260		5.23 mm
M10082040108X0PSAY	Renesas Electronics	MEMORY CIRCUIT		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words		1.8		8	SMALL OUTLINE	SOP8,.3		1.27 mm	105 Cel		1MX8	1M		-40 Cel	TIN	DUAL	R-PDSO-G8	3	2 V	2.16 mm	5.18 mm		8388608 bit	1.71 V	e3		260		5.23 mm
UPD485505GU-35	Renesas Electronics		COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		80 mA			5	5		SMALL OUTLINE	SOP24,.5	Other Memory ICs	1.27 mm	70 Cel					0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24					Not Qualified			e0			.08 Amp		25 ns
M30162040108X0PSAR	Renesas Electronics	MEMORY CIRCUIT		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		3		8	SMALL OUTLINE	SOP8,.3		1.27 mm	105 Cel		2MX8	2M		-40 Cel	TIN	DUAL	R-PDSO-G8	3	3.6 V	2.16 mm	5.18 mm		16777216 bit	2.7 V	e3		260		5.23 mm
M30082040054X0PSAY	Renesas Electronics	MEMORY CIRCUIT		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words		3		8	SMALL OUTLINE	SOP8,.3		1.27 mm	105 Cel		1MX8	1M		-40 Cel	TIN	DUAL	R-PDSO-G8	3	3.6 V	2.16 mm	5.18 mm		8388608 bit	2.7 V	e3		260		5.23 mm
M30162040108X0ISAR	Renesas Electronics	MEMORY CIRCUIT		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		3		8	SMALL OUTLINE	SOP8,.3		1.27 mm	85 Cel		2MX8	2M		-40 Cel	TIN	DUAL	R-PDSO-G8	3	3.6 V	2.16 mm	5.18 mm		16777216 bit	2.7 V	e3		260		5.23 mm
M10082040108X0ISAY	Renesas Electronics	MEMORY CIRCUIT		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words		1.8		8	SMALL OUTLINE	SOP8,.3		1.27 mm	85 Cel		1MX8	1M		-40 Cel	TIN	DUAL	R-PDSO-G8	3	2 V	2.16 mm	5.18 mm		8388608 bit	1.71 V	e3		260		5.23 mm
UPD42832G-15	Renesas Electronics		COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		40 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	Other Memory ICs	1.27 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28					Not Qualified	262144 bit		e0			.001 Amp		150 ns
M10082040108X0ISAR	Renesas Electronics	MEMORY CIRCUIT		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words		1.8		8	SMALL OUTLINE	SOP8,.3		1.27 mm	85 Cel		1MX8	1M		-40 Cel	TIN	DUAL	R-PDSO-G8	3	2 V	2.16 mm	5.18 mm		8388608 bit	1.71 V	e3		260		5.23 mm
M10042040108X0PSAR	Renesas Electronics	MEMORY CIRCUIT		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		1.8		8	SMALL OUTLINE	SOP8,.3		1.27 mm	105 Cel		512KX8	512K		-40 Cel	TIN	DUAL	R-PDSO-G8	3	2 V	2.16 mm	5.18 mm		4194304 bit	1.71 V	e3		260		5.23 mm
M10042040054X0ISAY	Renesas Electronics	MEMORY CIRCUIT		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		1.8		8	SMALL OUTLINE	SOP8,.3		1.27 mm	85 Cel		512KX8	512K		-40 Cel	TIN	DUAL	R-PDSO-G8	3	2 V	2.16 mm	5.18 mm		4194304 bit	1.71 V	e3		260		5.23 mm
M30082040054X0ISAY	Renesas Electronics	MEMORY CIRCUIT		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		1048576 words		3		8	SMALL OUTLINE	SOP8,.3		1.27 mm	85 Cel		1MX8	1M		-40 Cel	TIN	DUAL	R-PDSO-G8	3	3.6 V	2.16 mm	5.18 mm		8388608 bit	2.7 V	e3		260		5.23 mm
M10042040108X0ISAY	Renesas Electronics	MEMORY CIRCUIT		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		1.8		8	SMALL OUTLINE	SOP8,.3		1.27 mm	85 Cel		512KX8	512K		-40 Cel	TIN	DUAL	R-PDSO-G8	3	2 V	2.16 mm	5.18 mm		4194304 bit	1.71 V	e3		260		5.23 mm
KM658128ASG-8	Samsung		COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.5	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32					Not Qualified	1048576 bit		e0			.001 Amp		80 ns
KS74HCTLS670D	Samsung		INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING					5	5		SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	85 Cel					-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G16					Not Qualified			e0
KS74AHCT670D	Samsung		INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING					5	5		SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	85 Cel					-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G16					Not Qualified			e0
KS74HCTLS670DT	Samsung		INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING					5	5		SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	85 Cel					-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G16					Not Qualified			e0
KM658128ASG-12	Samsung		COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		50 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.5	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32					Not Qualified	1048576 bit		e0			.001 Amp		120 ns
KM658128ASG-10	Samsung		COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		60 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.5	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G32					Not Qualified	1048576 bit		e0			.001 Amp		100 ns
KS74AHCT670DT	Samsung		INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING					5	5		SMALL OUTLINE	SOP16,.25	Other Memory ICs	1.27 mm	85 Cel					-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G16					Not Qualified			e0
MT42C4064DJ-10	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		60 mA	65536 words		5	5	4	SMALL OUTLINE	SOP24,.4	Other Memory ICs	1.27 mm	70 Cel		64KX4	64K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24					Not Qualified	262144 bit		e0			.004 Amp		100 ns
MT42C4064DJ-12	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		60 mA	65536 words		5	5	4	SMALL OUTLINE	SOP24,.4	Other Memory ICs	1.27 mm	70 Cel		64KX4	64K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24					Not Qualified	262144 bit		e0			.004 Amp		120 ns
NP5Q128AE3ESFC0E	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	50 mA	16777216 words		3	3/3.3	8	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	85 Cel		16MX8	16M		-40 Cel		DUAL	R-PDSO-G16		3.6 V	2.65 mm	7.5 mm	Not Qualified	134217728 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	10.3 mm
MT42C4064DJ-15	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		60 mA	65536 words		5	5	4	SMALL OUTLINE	SOP24,.4	Other Memory ICs	1.27 mm	70 Cel		64KX4	64K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24					Not Qualified	262144 bit		e0			.004 Amp		150 ns
NP5Q128A13ESFC0E	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	50 mA	134217728 words		3	3/3.3	1	SMALL OUTLINE	SOP16,.4	SRAMs	1.27 mm	70 Cel		128MX1	128M		0 Cel		DUAL	R-PDSO-G16		3.6 V	2.65 mm	7.5 mm	Not Qualified	134217728 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	10.3 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.