RECTANGULAR Other Function Memory ICs 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
NAND256R4M3CZB5E	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	149	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-30 Cel		BOTTOM	R-PBGA-B149	1.95 V	1.2 mm	10 mm	Not Qualified	268435456 bit	1.7 V	LPSDRAM IS ORGANISED AS 16M X 16		40	260		13.5 mm
NAND256W3M4BZB5E	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	149	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		16777216 words	3	FLASH+SDRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-30 Cel		BOTTOM	R-PBGA-B149	3.6 V	1.2 mm	10 mm	Not Qualified	268435456 bit	2.5 V	LPSDRAM IS ORGANISED AS 16M X 16		40	260		13.5 mm
M36W832BE100ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 512K X 16 SRAM	e0			.00002 Amp	12 mm	100 ns
M36L0R8060B1ZAQE	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	52 mA	16777216 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.2 mm	8 mm	Not Qualified	268435456 bit	1.7 V	PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e1			.00011 Amp	10 mm
M76DW63000A90ZT	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	4194304 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B73	3.6 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	STATIC RAM IS ORGANIZED AS 512K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8				.0001 Amp	11.6 mm	90 ns
M36L0T7050T0ZAQ	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	30 mA	8388608 words		FLASH+PSRAM	1.8,3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN LEAD	BOTTOM	R-PBGA-B88	1.95 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 2M X 16	e0			.000005 Amp	10 mm	90 ns
NAND512R4M2AZB5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	137	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B137				Not Qualified
M36W432B85ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		20 mA		3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel			0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66				Not Qualified				e1					85 ns
M36W416BG70ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	1MX16	1M	-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 256K X 16	e1			.00001 Amp	12 mm	70 ns
M36W108T100ZM1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words				8	GRID ARRAY, LOW PROFILE			1 mm	70 Cel	1MX8	1M	0 Cel		BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM					11.8 mm
M36LLR8860D1ZAQF	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	52 mA	16777216 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	8 mm	Not Qualified	268435456 bit	1.7 V	PSRAM ALSO ORGANIZED AS 4M X 16	e1			.00011 Amp	10 mm
NAND256R3M2AZB5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	137	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B137				Not Qualified
M46Z256-120PL1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE		200 mA	262144 words	5		5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel	256KX16	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40				Not Qualified	4194304 bit			e0			.005 Amp		120 ns
M36DR432BD12ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	26 mA	2097152 words	1.8	FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.65 V	SRAM IS ORGANIZED AS 256K X 16	e0			.00001 Amp	12 mm	120 ns
M36DR432BD85ZA6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	26 mA	2097152 words	2	FLASH+SRAM	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	2.2 V	1.4 mm	8 mm	Not Qualified	33554432 bit	1.8 V	SRAM IS ORGANIZED AS 256K X 16	e0			.00001 Amp	12 mm	85 ns
M39432-12VNC1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		20 mA		3.3	EEPROM+FLASH	3.3		SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20	Other Memory ICs	.5 mm	70 Cel			0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G40				Not Qualified				e0			.000002 Amp		120 ns
M36W0R6040T0ZAQT	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	45 mA	4194304 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B88	1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16	e0			.00011 Amp	10 mm	70 ns
NAND01GR4M3CZB5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
NAND01GW4M5AZB5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
NAND01GW4M5CZB5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
M36LLR8760M1ZAQF	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	52 mA	16777216 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	8 mm	Not Qualified	268435456 bit	1.7 V	PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e1			.00011 Amp	10 mm
NAND512R4M5CZB5F	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	149	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		33554432 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel	32MX16	32M	-30 Cel		BOTTOM	R-PBGA-B149	1.95 V	1.2 mm	10 mm	Not Qualified	536870912 bit	1.7 V	LPSDRAM IS ORGANISED AS 16M X 16		40	260		13.5 mm
NAND256R3M0CZBE	STMicroelectronics	MEMORY CIRCUIT	OTHER	107	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		33554432 words	1.8			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX8	32M	-30 Cel		BOTTOM	R-PBGA-B107	1.95 V	1.2 mm	10.5 mm	Not Qualified	268435456 bit	1.7 V			40	260		13 mm
NAND01GR4M4CZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
M36W832TE100ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 512K X 16 SRAM	e0			.00002 Amp	12 mm	100 ns
NAND512R4M2BZB5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	137	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B137				Not Qualified
NAND256R4M3AZBF	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-30 Cel		BOTTOM	R-PBGA-B149	1.95 V	1.2 mm	10 mm	Not Qualified	268435456 bit	1.7 V			40	260		13.5 mm
NAND512W3M5BZB5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
M36W216BI85ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	1MX16	1M	0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 128KBIT X 16	e1			.00001 Amp	12 mm	85 ns
NAND256R3M0BZBF	STMicroelectronics	MEMORY CIRCUIT	OTHER	107	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		33554432 words	1.8			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX8	32M	-30 Cel		BOTTOM	R-PBGA-B107	1.95 V	1.2 mm	10.5 mm	Not Qualified	268435456 bit	1.7 V			40	260		13 mm
M36L0R8060B1ZAQ	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	52 mA	16777216 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel	TIN LEAD	BOTTOM	R-PBGA-B88	1.95 V	1.2 mm	8 mm	Not Qualified	268435456 bit	1.7 V	PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	e0			.00011 Amp	10 mm
NAND256R3M3AZB5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
NAND01GR3M3BZB5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
M36L0R7040T0ZAQF	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	47 mA	8388608 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1			.00007 Amp	10 mm
M36P0R9070E0ZAQF	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL EXTENDED	107	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		33554432 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	32MX16	32M	-30 Cel		BOTTOM	R-PBGA-B107	1.95 V	1.2 mm	8 mm	Not Qualified	536870912 bit	1.7 V						11 mm
NAND01GW3M3BZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
M36L0T7050B0ZAQ	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	30 mA	8388608 words		FLASH+PSRAM	1.8,3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	8MX16	8M	-25 Cel	TIN LEAD	BOTTOM	R-PBGA-B88	1.95 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 2M X 16	e0			.000005 Amp	10 mm	90 ns
M36W108AT100ZN5	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words		FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel	1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0			.00002 Amp	11.8 mm	100 ns
NAND512W3M4AZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				3	FLASH+SDRAM	3		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
M36W832B85ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	2MX16	2M	0 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 512K X 16 SRAM					12 mm
M76DW52003TA90Z	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	73	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3,3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3.6 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16; FLASH MEMORY IS ALSO ORGANIZED AS 4M X 8	e0			.0001 Amp	11.6 mm	90 ns
NAND512R4M3CZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
NAND01GR4M0CZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B107				Not Qualified
M36W432BG85ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm	8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM ORGANISED AS 256K X 16	e0			.00001 Amp	12 mm	85 ns
NAND01GR3M5AZB5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
M36LLR8860D1ZAQT	STMicroelectronics	MEMORY CIRCUIT	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	52 mA	16777216 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel	TIN LEAD	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm	8 mm	Not Qualified	268435456 bit	1.7 V	PSRAM ALSO ORGANIZED AS 4M X 16	e0			.00011 Amp	10 mm
NAND512R4M4AZC5F	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified
NAND256R3M5AZB5E	STMicroelectronics	MEMORY CIRCUIT	OTHER	149	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA149,12X16,32	Other Memory ICs	.8 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B149				Not Qualified

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.