RECTANGULAR Other Function Memory ICs 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time
DS2436Z/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		256 words			2.4/10	1	SMALL OUTLINE	SOP8,.25	Other Memory ICs		1.27 mm	85 Cel		256X1	256	-40 Cel	TIN LEAD	DUAL		R-PDSO-G8		10 V	1.75 mm			3.9 mm	Not Qualified	256 bit	2.4 V		e0					4.9 mm
DS2422P	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	LSOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words	COMMON	5	3/5	1	SMALL OUTLINE, LOW PROFILE		SRAMs		1.27 mm	85 Cel	OPEN-DRAIN	1KX1	1K	-40 Cel		DUAL	1, (1 LINE)	R-PDSO-C6	1	6 V	1.5 mm			3.76 mm	Not Qualified	1024 bit	2.8 V	ALSO CONTAINS 64 BIT LASERED ROM						3.94 mm	15000 ns
DS2436Z	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		256 words			2.4/10	1	SMALL OUTLINE	SOP8,.25	Other Memory ICs		1.27 mm	85 Cel		256X1	256	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDSO-G8	1	10 V	1.75 mm			3.9 mm	Not Qualified	256 bit	2.4 V		e0	20	245			4.9 mm
DS2405P	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND		ASYNCHRONOUS		64 words			3/5	1	SMALL OUTLINE	SOC6,.17	SRAMs		1.27 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-C6	1	6 V	1.5 mm			3.76 mm	Not Qualified	64 bit	2.8 V		e0					3.94 mm
DS2405Y	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		64 words				1	SMALL OUTLINE				2.3 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-G4	1	6 V	1.8 mm			3.5 mm	Not Qualified	64 bit	2.8 V		e0					6.5 mm
DS2405P+	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND		ASYNCHRONOUS		64 words			3/5	1	SMALL OUTLINE	SOC6,.17	SRAMs		1.27 mm	85 Cel		64X1	64	-40 Cel	MATTE TIN	DUAL		R-PDSO-C6	1	6 V	1.5 mm			3.76 mm	Not Qualified	64 bit	2.8 V		e3	30	260			3.94 mm
DS2401X1-S#T	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	2	BCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BU		ASYNCHRONOUS		64 words		5	3/5	1	CHIP CARRIER	BGA2,1X2,28	Other Memory ICs		.704 mm	85 Cel		64X1	64	-40 Cel		BOTTOM		R-XBCC-B2		6 V	.649 mm			.661 mm	Not Qualified	64 bit	2.8 V			NOT SPECIFIED	NOT SPECIFIED			1.321 mm
DS2401V	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	LSOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND		ASYNCHRONOUS		64 words			3/5	1	SMALL OUTLINE, LOW PROFILE	SOC6,.17	Other Memory ICs		1.27 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-C6		6 V	1.5 mm			3.76 mm	Not Qualified	64 bit	2.8 V		e0					3.94 mm
DS2423P+	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		C BEND	SERIAL	ASYNCHRONOUS		4096 words	COMMON	3	3/5	1	SMALL OUTLINE	SOC6,.17	SRAMs		1.27 mm	85 Cel	OPEN-DRAIN	4KX1	4K	-40 Cel	MATTE TIN	DUAL	1, (1 LINE)	R-PDSO-C6	1	6 V	1.5 mm			3.81 mm	Not Qualified	4096 bit	2.8 V	ALSO CONTAINS 64 BIT LASERED ROM	e3	30	260			3.937 mm	15000 ns
DS2405V	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	LSOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND		ASYNCHRONOUS		64 words				1	SMALL OUTLINE, LOW PROFILE				1.27 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-C6		6 V	1.5 mm			3.76 mm	Not Qualified	64 bit	2.8 V		e0					3.94 mm
DS2405P+T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND		ASYNCHRONOUS		64 words			3/5	1	SMALL OUTLINE	SOC6,.17	SRAMs		1.27 mm	85 Cel		64X1	64	-40 Cel	MATTE TIN	DUAL		R-PDSO-C6	1	6 V	1.5 mm			3.76 mm	Not Qualified	64 bit	2.8 V		e3					3.94 mm
DS2436Z+	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		256 words			2.4/10	1	SMALL OUTLINE	SOP8,.25	Other Memory ICs		1.27 mm	85 Cel		256X1	256	-40 Cel	MATTE TIN	DUAL		R-PDSO-G8	1	10 V	1.75 mm			3.9 mm	Not Qualified	256 bit	2.4 V		e3	30	260			4.9 mm
DS2401Y	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		64 words			3/5	1	SMALL OUTLINE	SOT-223	Other Memory ICs		2.3 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-G4		6 V	1.8 mm			3.5 mm	Not Qualified	64 bit	2.8 V		e0					6.5 mm
DS2405Z/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		64 words			3/5	1	SMALL OUTLINE	SOT-223	SRAMs		2.3 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-G4	1	6 V	1.8 mm			3.5 mm	Not Qualified	64 bit	2.8 V		e0					6.5 mm
DS2401X1	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	2	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL		ASYNCHRONOUS		64 words		5	3/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA2,1X2,28	Other Memory ICs		.704 mm	85 Cel		64X1	64	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B2	1	6 V	.649 mm			.661 mm	Not Qualified	64 bit	2.8 V		e0	20	240			1.321 mm
DS2405P/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND		ASYNCHRONOUS		64 words			3/5	1	SMALL OUTLINE	SOC6,.17	SRAMs		1.27 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-C6	1	6 V	1.5 mm			3.76 mm	Not Qualified	64 bit	2.8 V		e0					3.94 mm
DS2434S/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING			1.5 mA				3.6/6.4		SMALL OUTLINE, SHRINK PITCH	SSOP16,.3	Other Memory ICs		.65 mm	85 Cel				-40 Cel		DUAL		R-PDSO-G16			1.99 mm			5.29 mm	Not Qualified					NOT SPECIFIED	NOT SPECIFIED		.000003 Amp	6.2 mm
DS2436Z+T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		256 words			2.4/10	1	SMALL OUTLINE	SOP8,.25	Other Memory ICs		1.27 mm	85 Cel		256X1	256	-40 Cel	MATTE TIN	DUAL		R-PDSO-G8		10 V	1.75 mm			3.9 mm	Not Qualified	256 bit	2.4 V		e3	30	260			4.9 mm
DS2423P+T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		C BEND		ASYNCHRONOUS		4096 words		3		1	SMALL OUTLINE				1.27 mm	85 Cel		4KX1	4K	-40 Cel	MATTE TIN	DUAL		R-PDSO-C6	1	6 V	1.5 mm			3.76 mm	Not Qualified	4096 bit	2.8 V	ALSO CONTAINS 64 BIT LASERED ROM	e3	30	260			3.94 mm
DS2400Z-XXX	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING				64 words		5		1	SMALL OUTLINE, LOW PROFILE				2.3 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-G3	1	5.5 V	1.7 mm			3.5 mm	Not Qualified	64 bit	4.5 V		e0					6.5 mm
DS2434S	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING			1.5 mA				3.6/6.4		SMALL OUTLINE, SHRINK PITCH	SSOP16,.3	Other Memory ICs		.65 mm	85 Cel				-40 Cel	TIN LEAD	DUAL		R-PDSO-G16	1		1.99 mm			5.29 mm	Not Qualified				e0					6.2 mm
DS2401X1#U	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	2	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES				BALL							3/5		GRID ARRAY, FINE PITCH	BGA2,1X2,28	Other Memory ICs		.7 mm	85 Cel				-40 Cel		BOTTOM		R-PBGA-B2							Not Qualified					NOT SPECIFIED	NOT SPECIFIED
DS2423P	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		C BEND	SERIAL	ASYNCHRONOUS		4096 words	COMMON	3	3/5	1	SMALL OUTLINE	SOC6,.17	SRAMs		1.27 mm	85 Cel	OPEN-DRAIN	4KX1	4K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1, (1 LINE)	R-PDSO-C6	1	6 V	1.5 mm			3.76 mm	Not Qualified	4096 bit	2.8 V	ALSO CONTAINS 64 BIT LASERED ROM	e0	20	240			3.94 mm	15000 ns
DS2423X	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS		4096 words	COMMON	3.3	3/5	1	GRID ARRAY, VERY THIN PROFILE	BGA6(UNSPEC)	SRAMs		.95 mm	85 Cel	OPEN-DRAIN	4KX1	4K	-40 Cel	TIN LEAD	BOTTOM	1, (1 LINE)	R-PBGA-B6		6 V	.864 mm			1.91 mm	Not Qualified	4096 bit	2.8 V	ALSO CONTAINS 64 BIT LASERED ROM	e0					2.85 mm	15000 ns
DS2400Y-XXX	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	3	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING				64 words		5		1	SMALL OUTLINE, LOW PROFILE				2.3 mm	85 Cel		64X1	64	-40 Cel	TIN LEAD	DUAL		R-PDSO-G3	1	5.5 V	1.7 mm			3.5 mm	Not Qualified	64 bit	4.5 V		e0					6.5 mm
DS2435S	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS	1.5 mA	32 words		3.6	3.6/6.4	8	SMALL OUTLINE, SHRINK PITCH	SSOP16,.3	Other Memory ICs		.65 mm	85 Cel		32X8	32	-40 Cel	TIN LEAD	DUAL		R-PDSO-G16		6.4 V	1.99 mm			5.29 mm	Not Qualified	256 bit	2.5 V		e0					6.2 mm
DS2435S/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		32 words		3.6		8	SMALL OUTLINE, SHRINK PITCH				.65 mm	85 Cel		32X8	32	-40 Cel	TIN LEAD	DUAL		R-PDSO-G16		6.4 V	1.99 mm			5.29 mm	Not Qualified	256 bit	2.5 V		e0					6.2 mm
DS2405Z+T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	4	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		ASYNCHRONOUS		64 words			3/5	1	SMALL OUTLINE	SOT-223	SRAMs		2.3 mm	85 Cel		64X1	64	-40 Cel	MATTE TIN	DUAL		R-PDSO-G4	1	6 V	1.8 mm			3.5 mm	Not Qualified	64 bit	2.8 V		e3					6.5 mm
XC17S150XLPD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	1040128 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	1040128X1	1040128	-40 Cel	TIN LEAD	DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	1040128 bit	3 V		e0	30	225		.00005 Amp	9.3599 mm
XC1736DDDG8M	Xilinx	MEMORY CIRCUIT	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS		36288 words		5		1	IN-LINE				2.54 mm	125 Cel		36288X1	36288	-55 Cel		DUAL		R-GDIP-T8		5.5 V	5.08 mm			7.62 mm	Not Qualified	36288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			10.16 mm
XC17S05VO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	10 mA	53984 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	53984X1	53984	0 Cel	TIN LEAD	DUAL		R-PDSO-G8	3	5.25 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	53984 bit	4.75 V		e0	30	225		.00005 Amp	4.9 mm
XC17S100XLPD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	5 mA	781248 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	781248X1	781248	0 Cel	TIN LEAD	DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	781248 bit	3 V		e0	30	225		.00005 Amp	9.3599 mm
XC17S150XLSOG20C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		1040128 words		3.3		1	SMALL OUTLINE				1.27 mm	70 Cel		1040128X1	1040128	0 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	1040128 bit	3 V		e3	30	260			12.8 mm
XC17S50XLSO20C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	559232 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	70 Cel	3-STATE	559232X1	559232	0 Cel	TIN LEAD	DUAL		R-PDSO-G20	3	3.6 V	2.65 mm		10 MHz	7.5 mm	Not Qualified	559232 bit	3 V		e0	30	225		.00005 Amp	12.8 mm
XC1765DDDG8M	Xilinx	MEMORY CIRCUIT	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS		65536 words		5		1	IN-LINE				2.54 mm	125 Cel		64KX1	64K	-55 Cel	MATTE TIN	DUAL		R-GDIP-T8		5.5 V	5.08 mm			7.62 mm	Not Qualified	65536 bit	4.5 V		e3					10.16 mm
XC17S05XLVO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	54544 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	54544X1	54544	0 Cel	TIN LEAD	DUAL		R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	54544 bit	3 V		e0	30	225		.00005 Amp	4.9 mm
XC17S150XLSO20C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	1040128 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	70 Cel	3-STATE	1040128X1	1040128	0 Cel	TIN LEAD	DUAL		R-PDSO-G20	3	3.6 V	2.65 mm		10 MHz	7.5 mm	Not Qualified	1040128 bit	3 V		e0	30	225		.00005 Amp	12.8 mm
XC17S05XLPDG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS		54544 words		3.3		1	IN-LINE				2.54 mm	85 Cel		54544X1	54544	-40 Cel	Matte Tin (Sn)	DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified	54544 bit	3 V		e3	30	250			9.3599 mm
XC17S40PD8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS	10 mA	329312 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	329312X1	329312	0 Cel	TIN LEAD	DUAL		R-PDIP-T8	1	5.25 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	329312 bit	4.75 V		e0	30	225		.00005 Amp	9.3599 mm
XC17S05XLVOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		54544 words		3.3		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel		54544X1	54544	-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified	54544 bit	3 V		e3	30	260			4.9 mm
XC17S20VO8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	10 mA	178144 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	178144X1	178144	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDSO-G8	3	5.5 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	178144 bit	4.5 V		e0	30	225		.00005 Amp	4.9 mm
XAF01SVOG20Q	Xilinx	CONFIGURATION MEMORY	AUTOMOTIVE	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	SERIAL		10 mA				1.8,1.8/3.3		SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	Flash Memories	20	.635 mm	125 Cel				-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G20	3			20000 Write/Erase Cycles			Not Qualified	1048576 bit			e3	30	260	NOR TYPE	.001 Amp
XC17S20XLVO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	5 mA	179160 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	179160X1	179160	0 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDSO-G8	3	3.6 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	179160 bit	3 V		e0	30	225		.00005 Amp	4.9 mm
XC17S30VO8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	10 mA	247968 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	247968X1	247968	0 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDSO-G8	3	5.25 V	1.2 mm		10 MHz	3.9 mm	Not Qualified	247968 bit	4.75 V		e0	30	225		.00005 Amp	4.9 mm
XC17S05VOG8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		53984 words		5		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel		53984X1	53984	-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G8	3	5.5 V	1.2 mm			3.9 mm	Not Qualified	53984 bit	4.5 V		e3	30	260			4.9 mm
XC17S50XLPDG8C	Xilinx	MEMORY CIRCUIT	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS		559232 words		3.3		1	IN-LINE				2.54 mm	70 Cel		559232X1	559232	0 Cel	Matte Tin (Sn)	DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified	559232 bit	3 V		e3	30	250			9.3599 mm
XAF02SVOG20Q	Xilinx	CONFIGURATION MEMORY	AUTOMOTIVE	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	SERIAL		10 mA				1.8,1.8/3.3		SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	Flash Memories	20	.635 mm	125 Cel				-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G20	3			20000 Write/Erase Cycles			Not Qualified	2097152 bit			e3	30	260	NOR TYPE	.001 Amp
XAF04SVOG20Q	Xilinx	CONFIGURATION MEMORY	AUTOMOTIVE	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	SERIAL		10 mA				1.8,1.8/3.3		SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	Flash Memories		.635 mm	125 Cel				-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G20	3				33 MHz		Not Qualified	4194304 bit			e3	30	260	NOR TYPE	.001 Amp

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.