RECTANGULAR Other Function Memory ICs 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
S70KS1281DPBHA020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		16777216 words			1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm		6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
S72WS01GSF0YHMJ52	Infineon Technologies	MEMORY CIRCUIT	OTHER	186	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA186,13X17,25	Other Memory ICs	.65 mm	85 Cel		32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B186		1.95 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	512 MBIT SDRAM						13 mm	100 ns
S71NS128NA0BJWMZ2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm
S71KS512SC0BHA000	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words			1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm		6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8						8 mm
S70KL1281DABHI033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words			3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		3.6 V	1 mm		6 mm		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
SM2603T-10	Infineon Technologies		COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			8388608 words	1,2,4,8,FP	COMMON			2.5/3.3,3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	8MX8	8M	0 Cel		DUAL	R-PDSO-G54				100 MHz		Not Qualified	67108864 bit							1,2,4,8		4.7 ns
S71GL032NA0BHW0U0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		2097152 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm		7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260			9 mm	90 ns
S71XS256RD0ZHEC00	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16X16	16	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm		8 mm	Not Qualified	256 bit	1.7 V	PSRAM IS ORGANIZED AS 8M X 16						9.2 mm
SM2402T-7.5	Infineon Technologies		COMMERCIAL	44	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING		240 mA	4194304 words	1,2,4,8,FP	COMMON			2.5/3.3,3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	4MX4	4M	0 Cel		DUAL	R-PDSO-G44				133 MHz		Not Qualified	16777216 bit						.002 Amp	1,2,4,8		4.5 ns
S70KS1281DGBHI030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words			1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm		6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
S71GL032N40BHW0P2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B56		3.1 V	1.2 mm		7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 256K X 16						9 mm
S72NS512RE0AHGL43	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel		32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B133		1.95 V	1 mm		10 mm	Not Qualified	536870912 bit	1.7 V	DRAM IS ORGANISED AS 16M X 16						11 mm
S71NS128NA0BJWSZ2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					9.2 mm
SM2604T-6	Infineon Technologies		COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING			4194304 words	1,2,4,8,FP	COMMON			2.5/3.3,3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel		DUAL	R-PDSO-G54				166 MHz		Not Qualified	67108864 bit							1,2,4,8		4.3 ns
S70KS1281DGBHB030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		16777216 words			1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm		6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
S71NS128NA0BJWMZ0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm
S70KS1281DGBHV030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words			1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm		6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
S70KS1281DGBHI033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words			1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm		6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
S71GL032NA0BHW0Z0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		2097152 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm		7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260			9 mm	90 ns
SM2404T-10	Infineon Technologies		COMMERCIAL	50	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING		160 mA	1048576 words	1,2,4,8,FP	COMMON			2.5/3.3,3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel		DUAL	R-PDSO-G50				100 MHz		Not Qualified	16777216 bit						.002 Amp	1,2,4,8		5 ns
S98NS128NB0HW0020	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm		8 mm		134217728 bit	1.7 V							9.2 mm
S71NS128NA0BJWMW2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm
S70KS1281DABHA030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		16777216 words			1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm		6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
S71NS128NA0BJWMN3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm
S71KS512SC0BHA003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words			1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm		6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8						8 mm
S70KS1281DABHV030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words			1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm		6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
S71NS128NA0BJWSP0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					9.2 mm
S71GL128PC0HH30Y2	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B84		3.1 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.7 V							11.6 mm
S71GL064NB0BFW0Z2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm		7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 2M X 16	e1	40	260			9 mm
S71NS512RD0ZHEKL2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm		6.2 mm	Not Qualified	536870912 bit	1.7 V	PSRAM IS ORGANISED AS 128 MB(8 MB X 16-BIT)						7.7 mm
S72WS01GSF0YHMJ33	Infineon Technologies	MEMORY CIRCUIT	OTHER	186	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA186,13X17,25	Other Memory ICs	.65 mm	85 Cel		32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B186		1.95 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	512 MBIT SDRAM						13 mm	100 ns
S71GL128PC0HH30Y3	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B84		3.1 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.7 V							11.6 mm
S71GL064NA0BHW0U0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm		7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260			9 mm	90 ns
CY15B128Q-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		16384 words			3.3			8	SMALL OUTLINE			1.27 mm	85 Cel		16KX8	16K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	1.727 mm		3.898 mm		131072 bit	2 V				260			4.889 mm
CY15B016J-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		2048 words			3.3			8	SMALL OUTLINE			1.27 mm	85 Cel		2KX8	2K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	1.727 mm		3.8985 mm		16384 bit	2.7 V				260			4.889 mm
CY15E004J-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		512 words			5			8	SMALL OUTLINE			1.27 mm	85 Cel		512X8	512	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm		3.8985 mm		4096 bit	4.5 V				260			4.889 mm
CY15E064J-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		8192 words			5			8	SMALL OUTLINE			1.27 mm	85 Cel		8KX8	8K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm		3.8985 mm		65536 bit	4.5 V				260			4.889 mm
CY15B004Q-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		512 words			3			8	SMALL OUTLINE			1.27 mm	85 Cel		512X8	512	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	1.727 mm		3.8985 mm		4096 bit	2.7 V				260			4.889 mm
CY15B016J-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		2048 words			3.3			8	SMALL OUTLINE			1.27 mm	85 Cel		2KX8	2K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	1.727 mm		3.8985 mm		16384 bit	2.7 V				260			4.889 mm
CY15E016Q-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		2048 words			5			8	SMALL OUTLINE			1.27 mm	85 Cel		2KX8	2K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm		3.8985 mm		16384 bit	4.5 V				260			4.889 mm
CY15B064Q-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		8192 words			3.3			8	SMALL OUTLINE			1.27 mm	85 Cel		8KX8	8K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.65 V	1.727 mm		3.8985 mm		65536 bit	2.7 V				260			4.889 mm
CY15B016Q-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		2048 words			3.3			8	SMALL OUTLINE			1.27 mm	85 Cel		2KX8	2K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	1.727 mm		3.8985 mm		16384 bit	2.7 V				260			4.889 mm
CY15B004Q-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		512 words			3			8	SMALL OUTLINE			1.27 mm	85 Cel		512X8	512	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	1.727 mm		3.8985 mm		4096 bit	2.7 V				260			4.889 mm
CY15B064J-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		8192 words			3.3			8	SMALL OUTLINE			1.27 mm	85 Cel		8KX8	8K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.65 V	1.727 mm		3.8985 mm		65536 bit	2.7 V				260			4.889 mm
CY15E004Q-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		512 words			5			8	SMALL OUTLINE			1.27 mm	85 Cel		512X8	512	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm		3.8985 mm		4096 bit	4.5 V				260			4.889 mm
CY15E064Q-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		8192 words			5			8	SMALL OUTLINE			1.27 mm	85 Cel		8KX8	8K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm		3.8985 mm		65536 bit	4.5 V				260			4.889 mm
CY15E016J-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		2048 words			5			8	SMALL OUTLINE			1.27 mm	85 Cel		2KX8	2K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	5.5 V	1.727 mm		3.8985 mm		16384 bit	4.5 V				260			4.889 mm
CY15B256Q-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		32768 words			3.3			8	SMALL OUTLINE			1.27 mm	85 Cel		32KX8	32K	-40 Cel	PURE TIN	DUAL	R-PDSO-G8	3	3.6 V	1.727 mm		3.898 mm		262144 bit	2 V				260			4.889 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.