RECTANGULAR Other Function Memory ICs 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	No. of Words	Sequential Burst Length	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Interleaved Burst Length	Length	Maximum Access Time
S98WS064RBOHI0010	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	88	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	4194304 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B88		1.95 V	1.2 mm		8 mm	Not Qualified	67108864 bit	1.7 V						10 mm
S70KL1281DABHB033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	16777216 words			3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		3.6 V	1 mm		6 mm		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S70KL1281DABHA030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	16777216 words			3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		3.6 V	1 mm		6 mm		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S70KL1281DABHA023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	16777216 words			3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		3.6 V	1 mm		6 mm		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S70KS1281DPBHB020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	16777216 words			1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm		6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S71KL512SC0BHA000	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	67108864 words			3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm		6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
S71KL512SC0BHV000	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	67108864 words			3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24	3		1 mm		6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
S71GL064NB0BFW0U3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	4194304 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm		7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 2M X 16	e1	40	260		9 mm
S71NS128NA0BJWSE2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1				9.2 mm
S71NS128NA0BJWSF2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1				9.2 mm
S72WS01GSF0YHM150	Infineon Technologies	MEMORY CIRCUIT	OTHER	186	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	33554432 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA186,13X17,25	Other Memory ICs	.65 mm	85 Cel		32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B186		1.95 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	512 MBIT SDRAM					13 mm	100 ns
S71NS128NA0BJWMF3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1				7.7 mm
S71NS128NA0BJWSN2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1				9.2 mm
S71NS256RD0AHKJL0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES				BALL					1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA56,10X14,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B56						Not Qualified
S71NS128NA0BJWMM3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1				7.7 mm
S70KL1281DABHB030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	16777216 words			3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		3.6 V	1 mm		6 mm		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S71GL128PC0HH31Y0	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B84		3.1 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.7 V						11.6 mm
S72WS512RE0HH6GN0	Infineon Technologies	MEMORY CIRCUIT	OTHER	137	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	33554432 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX16	32M	-20 Cel		BOTTOM	R-PBGA-B137		1.95 V	1.2 mm		9 mm		536870912 bit	1.7 V						11.5 mm
S71NS128NA0BJWMM2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1				7.7 mm
S71NS128NA0BJWSM2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1				9.2 mm
S71GL032NA0BHW0U2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	2097152 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm		7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260		9 mm	90 ns
S98NS128NB0HW0023	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm		8 mm		134217728 bit	1.7 V						9.2 mm
S71GL032NA0BFW0Z3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	2097152 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm		7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260		9 mm	90 ns
S71GL032N40BHW0K2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B56		3.1 V	1.2 mm		7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 256K X 16					9 mm
S71NS128NA0BJWSF3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1				9.2 mm
S72WS01GSF0YHMJ50	Infineon Technologies	MEMORY CIRCUIT	OTHER	186	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	33554432 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA186,13X17,25	Other Memory ICs	.65 mm	85 Cel		32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B186		1.95 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	512 MBIT SDRAM					13 mm	100 ns
S72WS01GSF0YHMJ53	Infineon Technologies	MEMORY CIRCUIT	OTHER	186	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	33554432 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA186,13X17,25	Other Memory ICs	.65 mm	85 Cel		32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B186		1.95 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	512 MBIT SDRAM					13 mm	100 ns
S71NS064NB0BHWTN2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	4194304 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm		8 mm		67108864 bit	1.7 V	PSRAM IS ORGANIZED AS 2M X 16					9.2 mm
S98WS064RBOHI0013	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	88	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	4194304 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B88		1.95 V	1.2 mm		8 mm	Not Qualified	67108864 bit	1.7 V						10 mm
SM2603T-6	Infineon Technologies		COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING		8388608 words	1,2,4,8,FP	COMMON			2.5/3.3,3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	8MX8	8M	0 Cel		DUAL	R-PDSO-G54				166 MHz		Not Qualified	67108864 bit						1,2,4,8		4.3 ns
S98WS064RBOHI0020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	88	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	4194304 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B88		1.95 V	1.2 mm		8 mm	Not Qualified	67108864 bit	1.7 V						10 mm
SM2604T-10	Infineon Technologies		COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING		4194304 words	1,2,4,8,FP	COMMON			2.5/3.3,3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel		DUAL	R-PDSO-G54				100 MHz		Not Qualified	67108864 bit						1,2,4,8		4.7 ns
S71GL032N80BHW0K2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B56		3.1 V	1.2 mm		7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 512K X 16					9 mm
S71NS128NA0BJWSP3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1				9.2 mm
S71NS128NA0BJWSW0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1				9.2 mm
CY8C24633-24PVXI	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	28	SSOP		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	8192 words						1	SMALL OUTLINE, SHRINK PITCH			.65 mm	85 Cel		8KX1	8K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G28	3	5.25 V	2 mm		5.3 mm	Not Qualified	8192 bit	3 V		e4	20	260		10.2 mm
S98WS064RBOHW0010	Infineon Technologies	MEMORY CIRCUIT	OTHER	88	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	4194304 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B88		1.95 V	1.2 mm		8 mm	Not Qualified	67108864 bit	1.7 V						10 mm
S70KL1281DABHI030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	16777216 words			3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		3.6 V	1 mm		6 mm		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S71NS128NA0BJWMY2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1				7.7 mm
S71GL064NB0BHW0U2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	4194304 words			3	FLASH+PSRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm		7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 2M X 16	e1	40	260		9 mm	90 ns
S71GL064NA0BFW0Z3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	4194304 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm		7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260		9 mm	90 ns
S72NS512RE0AHGL40	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	33554432 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel		32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B133		1.95 V	1 mm		10 mm	Not Qualified	536870912 bit	1.7 V	DRAM IS ORGANISED AS 16M X 16					11 mm
S71GL128PC0HH30Y0	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B84		3.1 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.7 V						11.6 mm
S71NS128NA0BJWMP2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1				7.7 mm
S71NS064NB0BHWTN3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	4194304 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm		8 mm		67108864 bit	1.7 V	PSRAM IS ORGANIZED AS 2M X 16					9.2 mm
S71GL032NA0BFW0U3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	2097152 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm		7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260		9 mm	90 ns
S71NS128NA0BJWMP3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1				7.7 mm
S71KL512SC0BHI003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS	67108864 words			3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm		6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.