RECTANGULAR Other Function Memory ICs 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
CY15E016Q-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		2KX8	2K	-40 Cel	PURE TIN	DUAL		R-PDSO-G8	3	5.5 V	1.727 mm	3.8985 mm		16384 bit	4.5 V				260		4.889 mm
CY15V102QN-50SXEES	Infineon Technologies	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING		SYNCHRONOUS		262144 words		1.8		8	SMALL OUTLINE			1.27 mm	125 Cel		256KX8	256K	-40 Cel		DUAL		R-PDSO-G8		1.89 V	2.03 mm	5.23 mm		2097152 bit	1.71 V			NOT SPECIFIED	NOT SPECIFIED		5.23 mm
CY15B064J-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		8192 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		8KX8	8K	-40 Cel	PURE TIN	DUAL		R-PDSO-G8	3	3.65 V	1.727 mm	3.8985 mm		65536 bit	2.7 V				260		4.889 mm
CY15E004J-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		512X8	512	-40 Cel	PURE TIN	DUAL		R-PDSO-G8	3	5.5 V	1.727 mm	3.8985 mm		4096 bit	4.5 V				260		4.889 mm
CY15B128Q-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		16384 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		16KX8	16K	-40 Cel	PURE TIN	DUAL		R-PDSO-G8	3	3.6 V	1.727 mm	3.898 mm		131072 bit	2 V				260		4.889 mm
CY15E064J-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		8192 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		8KX8	8K	-40 Cel	PURE TIN	DUAL		R-PDSO-G8	3	5.5 V	1.727 mm	3.8985 mm		65536 bit	4.5 V				260		4.889 mm
CY15E064Q-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		8192 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		8KX8	8K	-40 Cel	PURE TIN	DUAL		R-PDSO-G8	3	5.5 V	1.727 mm	3.8985 mm		65536 bit	4.5 V				260		4.889 mm
CY15E016J-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		2KX8	2K	-40 Cel	PURE TIN	DUAL		R-PDSO-G8	3	5.5 V	1.727 mm	3.8985 mm		16384 bit	4.5 V				260		4.889 mm
CY15B004J-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		512X8	512	-40 Cel	PURE TIN	DUAL		R-PDSO-G8	3	3.65 V	1.727 mm	3.8985 mm		4096 bit	2.7 V				260		4.889 mm
CY15E004Q-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel		512X8	512	-40 Cel	PURE TIN	DUAL		R-PDSO-G8	3	5.5 V	1.727 mm	3.8985 mm		4096 bit	4.5 V				260		4.889 mm
CY15B064Q-SXAT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		8192 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		8KX8	8K	-40 Cel	PURE TIN	DUAL		R-PDSO-G8	3	3.65 V	1.727 mm	3.8985 mm		65536 bit	2.7 V				260		4.889 mm
CY15B016Q-SXA	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words		3.3		8	SMALL OUTLINE			1.27 mm	85 Cel		2KX8	2K	-40 Cel	PURE TIN	DUAL		R-PDSO-G8	3	3.6 V	1.727 mm	3.8985 mm		16384 bit	2.7 V				260		4.889 mm
2988146	Phoenix Contact	MEMORY CIRCUIT			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS		536870912 words				8	UNCASED CHIP						512MX8	512M			UPPER		R-XUUC-N						4294967296 bit				NOT SPECIFIED	NOT SPECIFIED
DS6205	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	5		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED				1664 words				1	SPECIAL SHAPE				70 Cel		1664X1	1664	0 Cel	TIN LEAD	UNSPECIFIED		R-XXSS-X5					Not Qualified	1664 bit		DATA RETENTION > 10 YEARS	e0
DS9106S-OG	Maxim Integrated	MEMORY CIRCUIT				RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED									SPECIAL SHAPE									TIN LEAD	UNSPECIFIED		R-XXSS-X					Not Qualified				e0
DS9106S-BL	Maxim Integrated	MEMORY CIRCUIT				RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED									SPECIAL SHAPE									TIN LEAD	UNSPECIFIED		R-XXSS-X					Not Qualified				e0
DS1205S	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS	6 mA	512 words		5	5	16	SMALL OUTLINE, SHRINK PITCH	SOP16,.4	Other Memory ICs	.635 mm	70 Cel		512X16	512	0 Cel	TIN LEAD	DUAL		R-PDSO-G16		5.5 V	1.75 mm	3.9 mm	Not Qualified	8192 bit	4.5 V		e0				4.89 mm
DS1217M-1/2-25	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	30		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS	100 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	CARD30	SRAMs		70 Cel		512KX8	512K	0 Cel	TIN LEAD	SINGLE		R-XSMA-N30		5.5 V			Not Qualified	4194304 bit	4.5 V		e0			.025 Amp		250 ns
DS9106S-WH	Maxim Integrated	MEMORY CIRCUIT				RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED									SPECIAL SHAPE									TIN LEAD	UNSPECIFIED		R-XXSS-X					Not Qualified				e0	20	240
DS9106S-GN	Maxim Integrated	MEMORY CIRCUIT				RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED									SPECIAL SHAPE									TIN LEAD	UNSPECIFIED		R-XXSS-X					Not Qualified				e0	20	240
DS1217M-4-25	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	30		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS	100 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	CARD30	SRAMs		70 Cel		512KX8	512K	0 Cel	TIN LEAD	SINGLE		R-XSMA-N30		5.5 V			Not Qualified	4194304 bit	4.5 V		e0			.025 Amp		250 ns
DS9106L-YL	Maxim Integrated	MEMORY CIRCUIT				RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED									SPECIAL SHAPE									TIN LEAD	UNSPECIFIED		R-XXSS-X					Not Qualified				e0	20	240
DS1213C	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE									IN-LINE			2.54 mm	70 Cel				0 Cel	TIN LEAD	DUAL		R-PDIP-T28	1		11.94 mm	15.24 mm	Not Qualified				e0				35.56 mm
DS1250	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	28		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED		ASYNCHRONOUS				5			MICROELECTRONIC ASSEMBLY				70 Cel				0 Cel	TIN LEAD	UNSPECIFIED		R-XXMA-X28		5.5 V			Not Qualified		4.5 V		e0
DS1205SN	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		1664 words		5		1	SMALL OUTLINE			1.27 mm	70 Cel		1664X1	1664	0 Cel	TIN LEAD	DUAL		R-PDSO-G16	1	5.5 V	2.65 mm	7.5 mm	Not Qualified	1664 bit	4.5 V		e0				10.3 mm
DS9106L-BL	Maxim Integrated	MEMORY CIRCUIT				RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED									SPECIAL SHAPE									TIN LEAD	UNSPECIFIED		R-XXSS-X					Not Qualified				e0	20	240
DS1205U	Maxim Integrated	MEMORY CIRCUIT				RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED				18 words				64	SPECIAL SHAPE						18X64	18		TIN LEAD	SINGLE		R-XSSS-X					Not Qualified	1152 bit			e0
DS1217A/256K-25	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	30		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS	75 mA	32768 words		5	5	8	MICROELECTRONIC ASSEMBLY	CARD30	SRAMs		70 Cel		32KX8	32K	0 Cel		SINGLE		R-XSMA-N30	1	5.5 V			Not Qualified	262144 bit	4.5 V					.01 Amp		250 ns
DS9106L-OG	Maxim Integrated	MEMORY CIRCUIT				RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED									SPECIAL SHAPE									TIN LEAD	UNSPECIFIED		R-XXSS-X					Not Qualified				e0	20	240
DS1217M-2-25	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	30		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS	100 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	CARD30	SRAMs		70 Cel		512KX8	512K	0 Cel	TIN LEAD	SINGLE		R-XSMA-N30		5.5 V			Not Qualified	4194304 bit	4.5 V		e0			.025 Amp		250 ns
DS9106L-WH	Maxim Integrated	MEMORY CIRCUIT				RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED									SPECIAL SHAPE									TIN LEAD	UNSPECIFIED		R-XXSS-X					Not Qualified				e0	20	240
DS9106L-PK	Maxim Integrated	MEMORY CIRCUIT				RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED									SPECIAL SHAPE									TIN LEAD	UNSPECIFIED		R-XXSS-X					Not Qualified				e0	20	240
DS1201	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	5		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED		SYNCHRONOUS	6 mA	128 words		5	5	8	SPECIAL SHAPE	MODULE,5LEAD,.65	SRAMs		70 Cel		128X8	128	0 Cel	TIN LEAD	SINGLE		R-XSSS-X		5.5 V			Not Qualified	1024 bit	4.5 V		e0			.0025 Amp
DS9106S-PK	Maxim Integrated	MEMORY CIRCUIT				RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED									SPECIAL SHAPE									TIN LEAD	UNSPECIFIED		R-XXSS-X					Not Qualified				e0
DS1217M-3-25	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	30		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS	100 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	CARD30	SRAMs		70 Cel		512KX8	512K	0 Cel	TIN LEAD	SINGLE		R-XSMA-N30		5.5 V			Not Qualified	4194304 bit	4.5 V		e0			.025 Amp		250 ns
DS1217M-1-25	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	30		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS	100 mA	524288 words		5	5	8	MICROELECTRONIC ASSEMBLY	CARD30	SRAMs		70 Cel		512KX8	512K	0 Cel	TIN LEAD	SINGLE		R-XSMA-N30		5.5 V			Not Qualified	4194304 bit	4.5 V		e0			.025 Amp		250 ns
DS1217A/64K-25	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	30		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS	75 mA	8192 words		5	5	8	MICROELECTRONIC ASSEMBLY	CARD30	SRAMs		70 Cel		8KX8	8K	0 Cel	TIN LEAD	SINGLE		R-XSMA-N30		5.5 V			Not Qualified	65536 bit	4.5 V		e0			.01 Amp		250 ns
DS1217A/16K-25	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	30		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS		2048 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		2KX8	2K	0 Cel	TIN LEAD	SINGLE		R-XSMA-N30		5.5 V			Not Qualified	16384 bit	4.5 V		e0
DS6200	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	5		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED				64 words		5		1	SPECIAL SHAPE				70 Cel		64X1	64	0 Cel	TIN LEAD	SINGLE		R-XSSS-X5		5.5 V			Not Qualified	64 bit	4.5 V	10 YEAR DATA RETENTION; 1-WIRE SERIAL INTERFACE	e0
DS1652S	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING						5	5		SMALL OUTLINE	SOP8,.25	Other Memory ICs	1.27 mm	70 Cel				0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G8					Not Qualified				e0
DS1217M1/2-25/KODAK	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	30		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS		524288 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		512KX8	512K	0 Cel	TIN LEAD	SINGLE		R-XSMA-N30		5.5 V			Not Qualified	4194304 bit	4.5 V		e0
DS6201	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	5		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED				1024 words				1	SPECIAL SHAPE				70 Cel		1KX1	1K	0 Cel	TIN LEAD	UNSPECIFIED		R-XXSS-X5					Not Qualified	1024 bit		DATA RETENTION > 10 YEARS	e0
DS9106L-GN	Maxim Integrated	MEMORY CIRCUIT				RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED									SPECIAL SHAPE									TIN LEAD	UNSPECIFIED		R-XXSS-X					Not Qualified				e0
DS1217A/128K-25	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	30		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS	75 mA	16384 words		5	5	8	MICROELECTRONIC ASSEMBLY	CARD30	SRAMs		70 Cel		16KX8	16K	0 Cel	TIN LEAD	SINGLE		R-XSMA-N30		5.5 V			Not Qualified	131072 bit	4.5 V		e0			.01 Amp		250 ns
DS9106S-YL	Maxim Integrated	MEMORY CIRCUIT				RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED									SPECIAL SHAPE									TIN LEAD	UNSPECIFIED		R-XXSS-X					Not Qualified				e0
DS1217M	Maxim Integrated	MEMORY CIRCUIT	COMMERCIAL	30		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD		ASYNCHRONOUS		524288 words		5		8	MICROELECTRONIC ASSEMBLY				70 Cel		512KX8	512K	0 Cel	TIN LEAD	SINGLE		R-XSMA-N30		5.5 V			Not Qualified	4194304 bit	4.5 V		e0
DS2423P/T&R	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		C BEND	SERIAL	ASYNCHRONOUS		4096 words	COMMON	3	3/5	1	SMALL OUTLINE	SOC6,.17	SRAMs	1.27 mm	85 Cel	OPEN-DRAIN	4KX1	4K	-40 Cel	TIN LEAD	DUAL	1, (1 LINE)	R-PDSO-C6	1	6 V	1.5 mm	3.76 mm	Not Qualified	4096 bit	2.8 V	ALSO CONTAINS 64 BIT LASERED ROM	e0				3.94 mm	15000 ns
DS2436S	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	16	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING			1.5 mA				2.7/10		SMALL OUTLINE, SHRINK PITCH	SSOP16,.3	Other Memory ICs	.65 mm	85 Cel				-40 Cel	TIN LEAD	DUAL		R-PDSO-G16			1.99 mm	5.29 mm	Not Qualified				e0				6.2 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.