RECTANGULAR Other Function Memory ICs 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
S71WS128PC0HF3SL0	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL						1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B84	3					Not Qualified				e1	40	260				80 ns
S71WS064JB0BFI2Y2	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	80	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		60 mA				1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA80,8X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	R-PBGA-B80						Not Qualified							.00005 Amp			55 ns
S27KS0641DPBHA023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		8388608 words			1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm		6 mm		67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
AM49DL324BGB85IT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		40 mA				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3					Not Qualified				e0		260	.000005 Amp			85 ns
S71WS512PC0HF3S22	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL						1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B84	3					Not Qualified				e1	40	260				80 ns
AM49DL324BGT70IT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		40 mA				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3					Not Qualified				e0		260	.000005 Amp			70 ns
S71WS256PD0HF3HR2	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL						1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B84	3					Not Qualified				e1	40	260				80 ns
S27KL0641DABHA020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		8388608 words			3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24	3	3.6 V	1 mm		6 mm		67108864 bit	2.7 V							8 mm
S71WS512PC0HF3S23	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL						1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B84	3					Not Qualified				e1	40	260				80 ns
S71WS512PC0HF3S20	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL						1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B84	3					Not Qualified				e1	40	260				80 ns
S71WS256PD0HF3HL0	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL						1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B84	3					Not Qualified				e1	40	260				80 ns
S71WS128JA0BAWAA1	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		60 mA				1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B84						Not Qualified							.00005 Amp			55 ns
S27KS0641DPBHB023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		8388608 words			1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		8MX8	8M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm		6 mm		67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
AM49DL322BGT70IT	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	73	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL		40 mA				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA73,10X12,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B73	3					Not Qualified				e0		260	.000005 Amp			70 ns
SLE66R35E7HMCC8	Infineon Technologies	CRYPTO MEMORY		8			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD			1024 words						8					70 Cel		1KX8	1K	-25 Cel		QUAD	R-XQMA-N8							8192 bit		EEPROM
SLE66R35E7MCC8	Infineon Technologies	CRYPTO MEMORY		8			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD			1024 words						8					70 Cel		1KX8	1K	-25 Cel		QUAD	R-XQMA-N8							8192 bit		EEPROM
SLE66R35IMCC8	Infineon Technologies	CRYPTO MEMORY		8			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD			1024 words						8					70 Cel		1KX8	1K	-25 Cel		QUAD	R-XQMA-N8		3.3 V					8192 bit
SLE66R35RMCC2	Infineon Technologies	CRYPTO MEMORY		2			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD			1024 words						8					70 Cel		1KX8	1K	-25 Cel		DUAL	R-XDMA-N2		3.3 V					8192 bit
SDA9251X	Infineon Technologies		COMMERCIAL	28	SOP		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING		100 mA				5		5		SMALL OUTLINE	SOP28,.45	Other Memory ICs	1.27 mm	70 Cel				0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G28						Not Qualified				e0			.005 Amp			25 ns
S71KL512SC0BHB003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words			3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24	3		1 mm		6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8						8 mm
SM2404T-7.5	Infineon Technologies		COMMERCIAL	50	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING		240 mA	1048576 words	1,2,4,8,FP	COMMON			2.5/3.3,3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel		DUAL	R-PDSO-G50				133 MHz		Not Qualified	16777216 bit						.002 Amp	1,2,4,8		4.5 ns
S71KL256SC0BHB003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		33554432 words			3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		32MX8	32M	-40 Cel		BOTTOM	R-PBGA-B24	3		1 mm		6 mm		268435456 bit		HYPER RAM IS ORGANISED AS 8MX8						8 mm
SM2402T-10	Infineon Technologies		COMMERCIAL	44	TSOP	2048	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING		160 mA	4194304 words	1,2,4,8,FP	COMMON			2.5/3.3,3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	4MX4	4M	0 Cel		DUAL	R-PDSO-G44				100 MHz		Not Qualified	16777216 bit						.002 Amp	1,2,4,8		5 ns
S71GL064NA0BFW0U2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm		7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260			9 mm	90 ns
S71NS128NA0BJWSD0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					9.2 mm
S72NS512RE0AHGG43	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words			1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel		32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B133		1.95 V	1 mm		10 mm	Not Qualified	536870912 bit	1.7 V	DRAM IS ORGANISED AS 16M X 16						11 mm
S71NS128NA0BJWME0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm
S71XS256RD0ZHEC42	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16X16	16	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm		8 mm	Not Qualified	256 bit	1.7 V	PSRAM IS ORGANIZED AS 8M X 16						9.2 mm
S71GL032NA0BFW0Z2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		2097152 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm		7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260			9 mm	90 ns
S71GL128PC0HH31Y3	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B84		3.1 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.7 V							11.6 mm
S71KL256SC0BHA000	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		33554432 words			3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		32MX8	32M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm		6 mm		268435456 bit		HYPER RAM IS ORGANISED AS 8MX8						8 mm
S70KS1281DABHA033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		16777216 words			1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm		6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
S75WS256PEFJF5VS2	Infineon Technologies	MEMORY CIRCUIT	OTHER	115	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words			1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B115	3	1.95 V	1.4 mm		9 mm	Not Qualified	268435456 bit	1.7 V		e1	40	260			12 mm
S71NS128NA0BJWMN0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm
S71NS256RC0AHKJL3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words			1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,10X14,20	Other Memory ICs	.5 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm		8 mm	Not Qualified	268435456 bit	1.7 V	PSRAM IS ORGANISED AS 64 MB(4 MB X 16-BIT)						9.2 mm
S71NS128NA0BJWME2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm
S71NS256NC0BJWVN1	Infineon Technologies	MEMORY CIRCUIT	OTHER	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16MX16	16M	-25 Cel	Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)	BOTTOM	R-PBGA-B60	3	1.95 V	1.2 mm		10 mm	Not Qualified	268435456 bit	1.7 V		e2	40	260			11 mm
S71NS128NA0BJWMN2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm
S70KS1281DABHB033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		16777216 words			1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm		6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
S71NS128NA0BJWMF2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm
S98WS064RBOHI0023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	88	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		4194304 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B88		1.95 V	1.2 mm		8 mm	Not Qualified	67108864 bit	1.7 V							10 mm
S71NS128NA0BJWSZ3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					9.2 mm
S71GL032N40BHW0P3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		2097152 words			3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B56		3.1 V	1.2 mm		7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 256K X 16						9 mm
S71GL032NA0BHW0U3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		2097152 words			3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm		7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260			9 mm	90 ns
S70KS1281DABHB030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		16777216 words			1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm		6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
S71NS256RD0AHKJL3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES				BALL						1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA56,10X14,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B56						Not Qualified
S71NS128NA0BJWSM0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					9.2 mm
S71NS128NA0BJWMD3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words			1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm		6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1					7.7 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.