Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | I2C Control Byte | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Interleaved Burst Length | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Micron Technology |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
5220 mA |
134217728 words |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
R-PDMA-N184 |
166 MHz |
Not Qualified |
9663676416 bit |
.09 Amp |
.7 ns |
|||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
268435456 words |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
256MX72 |
256M |
0 Cel |
DUAL |
R-PDMA-N184 |
125 MHz |
Not Qualified |
19327352832 bit |
.8 ns |
||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
268435456 words |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
256MX72 |
256M |
0 Cel |
DUAL |
R-PDMA-N184 |
143 MHz |
Not Qualified |
19327352832 bit |
.75 ns |
||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1530 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
38.1 mm |
Not Qualified |
1207959552 bit |
.03 Amp |
60 ns |
||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
2708 mA |
134217728 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
55 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.9 V |
200 MHz |
Not Qualified |
9663676416 bit |
1.7 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.44 Amp |
.6 ns |
||||||||||||||||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
3010 mA |
134217728 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
55 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.9 V |
266 MHz |
Not Qualified |
9663676416 bit |
1.7 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.562 Amp |
.5 ns |
||||||||||||||||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
1593 mA |
67108864 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
55 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.9 V |
266 MHz |
Not Qualified |
4831838208 bit |
1.7 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.369 Amp |
.5 ns |
||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1225 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
Not Qualified |
603979776 bit |
.05 Amp |
50 ns |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1225 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
Not Qualified |
603979776 bit |
.05 Amp |
50 ns |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1045 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
Not Qualified |
603979776 bit |
.05 Amp |
60 ns |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2044 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
31.75 mm |
Not Qualified |
1207959552 bit |
.073 Amp |
60 ns |
||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
985 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
Not Qualified |
603979776 bit |
.041 Amp |
50 ns |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2404 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
31.75 mm |
Not Qualified |
1207959552 bit |
.073 Amp |
50 ns |
||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1045 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
Not Qualified |
603979776 bit |
.05 Amp |
60 ns |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
865 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
Not Qualified |
603979776 bit |
.041 Amp |
60 ns |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
775 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
Not Qualified |
603979776 bit |
.041 Amp |
70 ns |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2044 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
31.75 mm |
Not Qualified |
1207959552 bit |
.073 Amp |
60 ns |
||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2404 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
31.75 mm |
Not Qualified |
1207959552 bit |
.073 Amp |
50 ns |
||||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2800 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
50.8 mm |
Not Qualified |
2415919104 bit |
.03 Amp |
50 ns |
||||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2570 mA |
67108864 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
95 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
R-PDMA-N240 |
200 MHz |
Not Qualified |
4831838208 bit |
.54 Amp |
.6 ns |
|||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2440 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
41.91 mm |
Not Qualified |
2415919104 bit |
.03 Amp |
70 ns |
||||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
3380 mA |
67108864 words |
COMMON |
1.5,1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
85 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
R-PDMA-N240 |
333 MHz |
Not Qualified |
4831838208 bit |
.451 Amp |
|||||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
810 mA |
8388608 words |
COMMON |
5 |
5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
Not Qualified |
603979776 bit |
.03 Amp |
60 ns |
|||||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1960 mA |
134217728 words |
COMMON |
1.5,1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
85 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
R-PDMA-N240 |
3 |
333 MHz |
Not Qualified |
9663676416 bit |
260 |
||||||||||||||||||||||||||||||||||||||||||
|
Samsung |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
4220 mA |
67108864 words |
COMMON |
2.6 |
2.6 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
R-PDMA-N184 |
200 MHz |
Not Qualified |
4831838208 bit |
.42 Amp |
.65 ns |
|||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2790 mA |
1073741824 words |
COMMON |
1.35 |
1.35 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
85 Cel |
3-STATE |
1GX72 |
1G |
0 Cel |
DUAL |
R-PDMA-N240 |
533 MHz |
Not Qualified |
77309411328 bit |
260 |
1.002 Amp |
.3 ns |
||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2440 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
50.8 mm |
Not Qualified |
2415919104 bit |
.03 Amp |
70 ns |
||||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
204 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1170 mA |
536870912 words |
COMMON |
1.35 |
1.35 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM204,24 |
Other Memory ICs |
.6 mm |
85 Cel |
3-STATE |
512MX72 |
512M |
0 Cel |
DUAL |
R-PDMA-N204 |
533 MHz |
Not Qualified |
38654705664 bit |
.135 Amp |
||||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2620 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
50.8 mm |
Not Qualified |
2415919104 bit |
.03 Amp |
60 ns |
||||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
4760 mA |
134217728 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
95 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
R-PDMA-N240 |
200 MHz |
Not Qualified |
9663676416 bit |
.76 Amp |
.6 ns |
|||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
204 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1665 mA |
1073741824 words |
COMMON |
1.35 |
1.35 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM204,24 |
Other Memory ICs |
.6 mm |
85 Cel |
3-STATE |
1GX72 |
1G |
0 Cel |
DUAL |
R-PDMA-N204 |
667 MHz |
Not Qualified |
77309411328 bit |
.27 Amp |
.255 ns |
|||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
3820 mA |
268435456 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
95 Cel |
3-STATE |
256MX72 |
256M |
0 Cel |
DUAL |
R-PDMA-N240 |
400 MHz |
Not Qualified |
19327352832 bit |
260 |
.4 ns |
|||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
204 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1485 mA |
536870912 words |
COMMON |
1.35 |
1.35 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM204,24 |
Other Memory ICs |
.6 mm |
85 Cel |
3-STATE |
512MX72 |
512M |
0 Cel |
DUAL |
R-PDMA-N204 |
667 MHz |
Not Qualified |
38654705664 bit |
.135 Amp |
||||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1960 mA |
268435456 words |
COMMON |
1.5,1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
85 Cel |
3-STATE |
256MX72 |
256M |
0 Cel |
DUAL |
R-PDMA-N240 |
3 |
333 MHz |
Not Qualified |
19327352832 bit |
260 |
||||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2620 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
41.91 mm |
Not Qualified |
2415919104 bit |
.03 Amp |
60 ns |
||||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2800 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
41.91 mm |
Not Qualified |
2415919104 bit |
.03 Amp |
50 ns |
||||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2440 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
50.8 mm |
Not Qualified |
2415919104 bit |
.03 Amp |
70 ns |
||||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2440 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
41.91 mm |
Not Qualified |
2415919104 bit |
.03 Amp |
70 ns |
||||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
900 mA |
8388608 words |
COMMON |
5 |
5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
Not Qualified |
603979776 bit |
.03 Amp |
50 ns |
|||||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2620 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
41.91 mm |
Not Qualified |
2415919104 bit |
.03 Amp |
60 ns |
||||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2800 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
50.8 mm |
Not Qualified |
2415919104 bit |
.03 Amp |
50 ns |
||||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
3435 mA |
268435456 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
95 Cel |
3-STATE |
256MX72 |
256M |
0 Cel |
DUAL |
R-PDMA-N240 |
333 MHz |
Not Qualified |
19327352832 bit |
260 |
.45 ns |
|||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2700 mA |
268435456 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
95 Cel |
3-STATE |
256MX72 |
256M |
0 Cel |
DUAL |
R-PDMA-N240 |
200 MHz |
Not Qualified |
19327352832 bit |
.27 Amp |
.6 ns |
|||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
3030 mA |
134217728 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
95 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
R-PDMA-N240 |
400 MHz |
Not Qualified |
9663676416 bit |
260 |
.135 Amp |
.4 ns |
||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2935 mA |
268435456 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
95 Cel |
3-STATE |
256MX72 |
256M |
0 Cel |
DUAL |
R-PDMA-N240 |
200 MHz |
Not Qualified |
19327352832 bit |
260 |
.6 ns |
|||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2620 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
41.91 mm |
Not Qualified |
2415919104 bit |
.03 Amp |
60 ns |
||||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1540 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
50.8 mm |
Not Qualified |
2415919104 bit |
.03 Amp |
60 ns |
||||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
536870912 words |
COMMON |
1.5,1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
85 Cel |
3-STATE |
512MX72 |
512M |
0 Cel |
DUAL |
R-PDMA-N240 |
Not Qualified |
38654705664 bit |
Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.
One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.
Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.
Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.