Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | I2C Control Byte | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Interleaved Burst Length | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1233 mA |
268435456 words |
COMMON |
1.35 |
1.35 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
85 Cel |
3-STATE |
256MX72 |
256M |
0 Cel |
DUAL |
R-PDMA-N240 |
667 MHz |
Not Qualified |
19327352832 bit |
.18 Amp |
.255 ns |
||||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
204 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1530 mA |
536870912 words |
COMMON |
1.35 |
1.35 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM204,24 |
Other Memory ICs |
.6 mm |
85 Cel |
3-STATE |
512MX72 |
512M |
0 Cel |
DUAL |
R-PDMA-N204 |
800 MHz |
Not Qualified |
38654705664 bit |
.135 Amp |
||||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2925 mA |
268435456 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
95 Cel |
3-STATE |
256MX72 |
256M |
0 Cel |
DUAL |
R-PDMA-N240 |
267 MHz |
Not Qualified |
19327352832 bit |
.27 Amp |
.5 ns |
|||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
3050 mA |
134217728 words |
COMMON |
1.5,1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
85 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
R-PDMA-N240 |
266 MHz |
Not Qualified |
9663676416 bit |
||||||||||||||||||||||||||||||||||||||||||||
|
Samsung |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
3990 mA |
67108864 words |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
R-PDMA-N184 |
166 MHz |
Not Qualified |
4831838208 bit |
.42 Amp |
.7 ns |
|||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
3500 mA |
536870912 words |
COMMON |
1.5,1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
85 Cel |
3-STATE |
512MX72 |
512M |
0 Cel |
DUAL |
R-PDMA-N240 |
Not Qualified |
38654705664 bit |
|||||||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2620 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
50.8 mm |
Not Qualified |
2415919104 bit |
.03 Amp |
60 ns |
||||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2800 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
41.91 mm |
Not Qualified |
2415919104 bit |
.03 Amp |
50 ns |
||||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
3275 mA |
268435456 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
95 Cel |
3-STATE |
256MX72 |
256M |
0 Cel |
DUAL |
R-PDMA-N240 |
267 MHz |
Not Qualified |
19327352832 bit |
260 |
.5 ns |
|||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2800 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
50.8 mm |
Not Qualified |
2415919104 bit |
.03 Amp |
50 ns |
||||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
5880 mA |
268435456 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
95 Cel |
3-STATE |
256MX72 |
256M |
0 Cel |
DUAL |
R-PDMA-N240 |
200 MHz |
Not Qualified |
19327352832 bit |
.6 ns |
||||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2630 mA |
134217728 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
95 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
R-PDMA-N240 |
267 MHz |
Not Qualified |
9663676416 bit |
260 |
.135 Amp |
.5 ns |
||||||||||||||||||||||||||||||||||||||||
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
4190 mA |
2147483648 words |
COMMON |
1.35 |
1.35 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
85 Cel |
3-STATE |
2GX72 |
2G |
0 Cel |
DUAL |
R-PDMA-N240 |
800 MHz |
Not Qualified |
154618822656 bit |
.225 ns |
|||||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2620 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
50.8 mm |
Not Qualified |
2415919104 bit |
.03 Amp |
60 ns |
||||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2620 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
41.91 mm |
Not Qualified |
2415919104 bit |
.03 Amp |
60 ns |
||||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2440 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
41.91 mm |
Not Qualified |
2415919104 bit |
.03 Amp |
70 ns |
||||||||||||||||||||||||||||||||||||||||||
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1512 mA |
268435456 words |
COMMON |
1.35 |
1.35 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
85 Cel |
3-STATE |
256MX72 |
256M |
0 Cel |
DUAL |
R-PDMA-N240 |
800 MHz |
Not Qualified |
19327352832 bit |
.09 Amp |
.225 ns |
||||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1540 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
53.34 mm |
Not Qualified |
2415919104 bit |
.03 Amp |
60 ns |
||||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
810 mA |
8388608 words |
COMMON |
5 |
5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
Not Qualified |
603979776 bit |
.03 Amp |
60 ns |
|||||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
3380 mA |
134217728 words |
COMMON |
1.5,1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
85 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
R-PDMA-N240 |
333 MHz |
Not Qualified |
9663676416 bit |
||||||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2620 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
59.69 mm |
Not Qualified |
2415919104 bit |
.03 Amp |
60 ns |
||||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2800 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
41.91 mm |
Not Qualified |
2415919104 bit |
.03 Amp |
50 ns |
||||||||||||||||||||||||||||||||||||||||||
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
4170 mA |
2147483648 words |
COMMON |
1.35 |
1.35 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
85 Cel |
3-STATE |
2GX72 |
2G |
0 Cel |
DUAL |
R-PDMA-N240 |
667 MHz |
Not Qualified |
154618822656 bit |
.255 ns |
|||||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2800 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
41.91 mm |
Not Qualified |
2415919104 bit |
.03 Amp |
50 ns |
||||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
5090 mA |
1073741824 words |
COMMON |
1.5,1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
85 Cel |
3-STATE |
1GX72 |
1G |
0 Cel |
DUAL |
R-PDMA-N240 |
3 |
266 MHz |
Not Qualified |
77309411328 bit |
260 |
2.52 Amp |
|||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
204 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1710 mA |
1073741824 words |
COMMON |
1.35 |
1.35 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM204,24 |
Other Memory ICs |
.6 mm |
85 Cel |
3-STATE |
1GX72 |
1G |
0 Cel |
DUAL |
R-PDMA-N204 |
800 MHz |
Not Qualified |
77309411328 bit |
.27 Amp |
.225 ns |
|||||||||||||||||||||||||||||||||||||||||
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1278 mA |
268435456 words |
COMMON |
1.35 |
1.35 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
85 Cel |
3-STATE |
256MX72 |
256M |
0 Cel |
DUAL |
R-PDMA-N240 |
800 MHz |
Not Qualified |
19327352832 bit |
.18 Amp |
.225 ns |
||||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1170 mA |
134217728 words |
COMMON |
1.35 |
1.35 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
85 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
R-PDMA-N240 |
800 MHz |
Not Qualified |
9663676416 bit |
260 |
.09 Amp |
.225 ns |
||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2740 mA |
134217728 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
95 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
R-PDMA-N240 |
333 MHz |
Not Qualified |
9663676416 bit |
260 |
.135 Amp |
.45 ns |
||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
204 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1350 mA |
1073741824 words |
COMMON |
1.35 |
1.35 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM204,24 |
Other Memory ICs |
.6 mm |
85 Cel |
3-STATE |
1GX72 |
1G |
0 Cel |
DUAL |
R-PDMA-N204 |
533 MHz |
Not Qualified |
77309411328 bit |
.27 Amp |
.3 ns |
|||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2440 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
50.8 mm |
Not Qualified |
2415919104 bit |
.03 Amp |
70 ns |
||||||||||||||||||||||||||||||||||||||||||
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1656 mA |
536870912 words |
COMMON |
1.35 |
1.35 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
85 Cel |
3-STATE |
512MX72 |
512M |
0 Cel |
DUAL |
R-PDMA-N240 |
800 MHz |
Not Qualified |
38654705664 bit |
||||||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2440 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
50.8 mm |
Not Qualified |
2415919104 bit |
.03 Amp |
70 ns |
||||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
3105 mA |
268435456 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
95 Cel |
3-STATE |
256MX72 |
256M |
0 Cel |
DUAL |
R-PDMA-N240 |
333 MHz |
Not Qualified |
19327352832 bit |
.27 Amp |
.45 ns |
|||||||||||||||||||||||||||||||||||||||||
|
Samsung |
INDUSTRIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1350 mA |
1073741824 words |
COMMON |
1.5 |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
85 Cel |
3-STATE |
1GX72 |
1G |
-40 Cel |
DUAL |
R-PDMA-N240 |
933 MHz |
Not Qualified |
77309411328 bit |
.27 Amp |
.195 ns |
|||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1125 mA |
134217728 words |
COMMON |
1.35 |
1.35 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
85 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
R-PDMA-N240 |
667 MHz |
Not Qualified |
9663676416 bit |
260 |
.09 Amp |
.255 ns |
||||||||||||||||||||||||||||||||||||||||
|
Samsung |
INDUSTRIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1710 mA |
1073741824 words |
COMMON |
1.5 |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
85 Cel |
3-STATE |
1GX72 |
1G |
-40 Cel |
DUAL |
R-PDMA-N240 |
800 MHz |
Not Qualified |
77309411328 bit |
.27 Amp |
.225 ns |
|||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
3275 mA |
1073741824 words |
COMMON |
1.35 |
1.35 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
85 Cel |
3-STATE |
1GX72 |
1G |
0 Cel |
DUAL |
R-PDMA-N240 |
667 MHz |
Not Qualified |
77309411328 bit |
260 |
1.042 Amp |
.255 ns |
||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
6420 mA |
268435456 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
95 Cel |
3-STATE |
256MX72 |
256M |
0 Cel |
DUAL |
R-PDMA-N240 |
267 MHz |
Not Qualified |
19327352832 bit |
.5 ns |
||||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2440 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
41.91 mm |
Not Qualified |
2415919104 bit |
.03 Amp |
70 ns |
||||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1710 mA |
536870912 words |
COMMON |
1.35 |
1.35 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
85 Cel |
3-STATE |
512MX72 |
512M |
0 Cel |
DUAL |
R-PDMA-N240 |
533 MHz |
Not Qualified |
38654705664 bit |
260 |
||||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2025 mA |
536870912 words |
COMMON |
1.35 |
1.35 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
85 Cel |
3-STATE |
512MX72 |
512M |
0 Cel |
DUAL |
R-PDMA-N240 |
667 MHz |
Not Qualified |
38654705664 bit |
260 |
||||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
5090 mA |
134217728 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
95 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
R-PDMA-N240 |
267 MHz |
Not Qualified |
9663676416 bit |
.82 Amp |
.5 ns |
|||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
536870912 words |
COMMON |
1.5,1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
85 Cel |
3-STATE |
512MX72 |
512M |
0 Cel |
DUAL |
R-PDMA-N240 |
Not Qualified |
38654705664 bit |
||||||||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
3500 mA |
536870912 words |
COMMON |
1.5,1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
85 Cel |
3-STATE |
512MX72 |
512M |
0 Cel |
DUAL |
R-PDMA-N240 |
Not Qualified |
38654705664 bit |
|||||||||||||||||||||||||||||||||||||||||||||
|
Samsung |
OTHER |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
3050 mA |
67108864 words |
COMMON |
1.5,1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
85 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
R-PDMA-N240 |
266 MHz |
Not Qualified |
4831838208 bit |
.396 Amp |
|||||||||||||||||||||||||||||||||||||||||||
Samsung |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2800 mA |
33554432 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
32MX72 |
32M |
0 Cel |
DUAL |
R-PDMA-N168 |
50.8 mm |
Not Qualified |
2415919104 bit |
.03 Amp |
50 ns |
||||||||||||||||||||||||||||||||||||||||||
|
Samsung |
INDUSTRIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1755 mA |
1073741824 words |
COMMON |
1.5 |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
85 Cel |
3-STATE |
1GX72 |
1G |
-40 Cel |
DUAL |
R-PDMA-N240 |
667 MHz |
Not Qualified |
77309411328 bit |
.27 Amp |
.255 ns |
Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.
One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.
Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.
Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.