AUTOMOTIVE Other Function Memory ICs 25

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time
CY15B102Q-SXET	Infineon Technologies	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING		SYNCHRONOUS	5 mA	262144 words	3.3		2.5/3.3	8	SMALL OUTLINE	SOP8,.3	SRAMs		1.27 mm	125 Cel	256KX8	256K	-40 Cel	PURE TIN	DUAL		R-PDSO-G8	3	3.6 V	2.03 mm			5.23 mm	Not Qualified	2097152 bit	2 V			260		.00075 Amp	5.28 mm
CY15B102Q-SXE	Infineon Technologies	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING		SYNCHRONOUS	5 mA	262144 words	3.3		2.5/3.3	8	SMALL OUTLINE	SOP8,.3	SRAMs		1.27 mm	125 Cel	256KX8	256K	-40 Cel	PURE TIN	DUAL		R-PDSO-G8	3	3.6 V	2.03 mm			5.23 mm	Not Qualified	2097152 bit	2 V		30	260		.00075 Amp	5.28 mm
47L16-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words		EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	125 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm			3.9 mm		16384 bit	2.7 V	e3	40	260			4.9 mm	400 ns
47L16-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words		EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			.65 mm	125 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm			3 mm		16384 bit	2.7 V	e3	40	260			4.4 mm	400 ns
MR25H10MDF	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	8	HVSON	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		NO LEAD		SYNCHRONOUS		131072 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	125 Cel	128KX8	128K	-40 Cel	MATTE TIN	DUAL		R-PDSO-N8	3	3.6 V	.9 mm			5 mm		1048576 bit	3 V	e3	30	260			6 mm
47L16T-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words		EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	125 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm			3.9 mm		16384 bit	2.7 V	e3	40	260			4.9 mm	400 ns
47L16-E/P	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE		SYNCHRONOUS		2048 words		EEPROM+SRAM		8	IN-LINE	DIP8,.3			2.54 mm	125 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		3.6 V	5.334 mm			7.62 mm		16384 bit	2.7 V	e3					9.271 mm	400 ns
47C04T-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words	5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	125 Cel	512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm			3.9 mm		4096 bit	4.5 V	e3	40	260			4.9 mm	400 ns
MR2A08AMYS35	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	44	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING		ASYNCHRONOUS	135 mA	262144 words	3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs		.8 mm	125 Cel	256KX8	256K	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm			10.16 mm	Not Qualified	2097152 bit	3 V		NOT SPECIFIED	NOT SPECIFIED		.02 Amp	18.41 mm	35 ns
MR2A16AMYS35	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	44	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING		ASYNCHRONOUS		262144 words	3.3			16	SMALL OUTLINE, THIN PROFILE				.8 mm	125 Cel	256KX16	256K	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm			10.16 mm		4194304 bit	3 V		NOT SPECIFIED	NOT SPECIFIED			18.41 mm
MR2A08AMYS35R	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	44	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING		ASYNCHRONOUS	135 mA	262144 words	3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs		.8 mm	125 Cel	256KX8	256K	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm			10.16 mm	Not Qualified	2097152 bit	3 V		NOT SPECIFIED	NOT SPECIFIED		.02 Amp	18.41 mm	35 ns
47C04-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words	5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23			1.27 mm	125 Cel	512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm			3.9 mm		4096 bit	4.5 V	e3	40	260			4.9 mm	400 ns
47C04T-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words	5	EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			.65 mm	125 Cel	512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm			3 mm		4096 bit	4.5 V	e3	40	260			4.4 mm	400 ns
47L04-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words		EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			.65 mm	125 Cel	512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm			3 mm		4096 bit	2.7 V	e3	40	260			4.4 mm	400 ns
47C04-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		512 words	5	EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			.65 mm	125 Cel	512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm			3 mm		4096 bit	4.5 V	e3	40	260			4.4 mm	400 ns
47L16T-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING		SYNCHRONOUS		2048 words		EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			.65 mm	125 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm			3 mm		16384 bit	2.7 V	e3	40	260			4.4 mm	400 ns
MR25H256MDC	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	8	HSON	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD		SYNCHRONOUS		32768 words	3.3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG	SOLCC8,.25	SRAMs		1.27 mm	125 Cel	32KX8	32K	-40 Cel		DUAL		R-PDSO-N8		3.6 V	1.05 mm			5 mm	Not Qualified	262144 bit	3 V		NOT SPECIFIED	NOT SPECIFIED		.00001 Amp	6 mm
MR2A16AMYS35R	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	44	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING		ASYNCHRONOUS		262144 words	3.3			16	SMALL OUTLINE, THIN PROFILE				.8 mm	125 Cel	256KX16	256K	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm			10.16 mm		4194304 bit	3 V		NOT SPECIFIED	NOT SPECIFIED			18.41 mm
5962H1321201VXC	Defense Logistics Agency	MEMORY CIRCUIT	AUTOMOTIVE	76	QFF	SQUARE	1M Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535 Class V	FLAT		SYNCHRONOUS		1048576 words	3.3			16	FLATPACK	QFL76,.1.2SQ			1.27 mm	125 Cel	1MX16	1M	-40 Cel		QUAD		S-CQFP-F76		3.6 V	4.713 mm			29.21 mm	Qualified	16777216 bit	3 V						29.21 mm
CC2544RHBR	Texas Instruments	MEMORY CIRCUIT	AUTOMOTIVE		HVQCCN	SQUARE		PLASTIC/EPOXY	YES				NO LEAD									CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	LCC32,.2SQ,20			.5 mm	125 Cel			-40 Cel	NICKEL PALLADIUM GOLD SILVER	QUAD		S-PQCC-N32	3	3.6 V	1 mm		2496 MHz	5 mm			2 V	e4	30	260			5 mm
CC2544RHBT	Texas Instruments	MEMORY CIRCUIT	AUTOMOTIVE		HVQCCN	SQUARE		PLASTIC/EPOXY	YES				NO LEAD									CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	LCC32,.2SQ,20			.5 mm	125 Cel			-40 Cel	NICKEL PALLADIUM GOLD SILVER	QUAD		S-PQCC-N32	3	3.6 V	1 mm		2496 MHz	5 mm			2 V	e4	30	260			5 mm
CY15V102QN-50SXEES	Infineon Technologies	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING		SYNCHRONOUS		262144 words	1.8			8	SMALL OUTLINE				1.27 mm	125 Cel	256KX8	256K	-40 Cel		DUAL		R-PDSO-G8		1.89 V	2.03 mm			5.23 mm		2097152 bit	1.71 V		NOT SPECIFIED	NOT SPECIFIED			5.23 mm
XAF01SVOG20Q	Xilinx	CONFIGURATION MEMORY	AUTOMOTIVE	20	TSSOP	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	SERIAL		10 mA				1.8,1.8/3.3		SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	Flash Memories	20	.635 mm	125 Cel			-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G20	3			20000 Write/Erase Cycles			Not Qualified	1048576 bit		e3	30	260	NOR TYPE	.001 Amp
XAF02SVOG20Q	Xilinx	CONFIGURATION MEMORY	AUTOMOTIVE	20	TSSOP	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	SERIAL		10 mA				1.8,1.8/3.3		SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	Flash Memories	20	.635 mm	125 Cel			-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G20	3			20000 Write/Erase Cycles			Not Qualified	2097152 bit		e3	30	260	NOR TYPE	.001 Amp
XAF04SVOG20Q	Xilinx	CONFIGURATION MEMORY	AUTOMOTIVE	20	TSSOP	RECTANGULAR		PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	SERIAL		10 mA				1.8,1.8/3.3		SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	Flash Memories		.635 mm	125 Cel			-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G20	3				33 MHz		Not Qualified	4194304 bit		e3	30	260	NOR TYPE	.001 Amp

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.