MILITARY Other Function Memory ICs 84

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
IM6653AMJG/HR	Renesas Electronics	OTP ROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE		12 mA	1024 words	COMMON			4	IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	125 Cel	3-STATE	1KX4	1K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24				Not Qualified	4096 bit			e0	.00004 Amp		350 ns
CD40108BEX98	Renesas Electronics		MILITARY	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE						5/15		IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	125 Cel				-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24								e0
IDT79R3020-12GM	Renesas Electronics	MEMORY CIRCUIT	MILITARY	68	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG					5	5		GRID ARRAY	PGA68,11X11	Other Memory ICs	2.54 mm	125 Cel				-55 Cel	TIN LEAD	PERPENDICULAR	S-XPGA-P68				Not Qualified				e0
LR3220GM-25	Broadcom	MEMORY CIRCUIT	MILITARY	180	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG		160 mA			5	5		GRID ARRAY	PGA180M,15X15	Other Memory ICs	2.54 mm	125 Cel				-55 Cel	Tin/Lead (Sn/Pb)	PERPENDICULAR	S-XPGA-P180				Not Qualified				e0
LR3220GM-33	Broadcom		MILITARY	180	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG		170 mA			5	5		GRID ARRAY	PGA180M,15X15	Other Memory ICs	2.54 mm	125 Cel				-55 Cel	Tin/Lead (Sn/Pb)	PERPENDICULAR	S-XPGA-P180				Not Qualified				e0
KS54AHCT670J	Samsung		MILITARY	16	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE					5	5		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel				-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16				Not Qualified				e0
KS54HCTLS670J	Samsung		MILITARY	16	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE					5	5		IN-LINE	DIP16,.3	Other Memory ICs	2.54 mm	125 Cel				-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T16				Not Qualified				e0
EPC1213DM883B8	Altera	MEMORY CIRCUIT	MILITARY	8	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS		212992 words		5		1	IN-LINE			2.54 mm	125 Cel	3-STATE	208KX1	208K	-55 Cel		DUAL	R-GDIP-T8	5.5 V	5.08 mm	7.62 mm	Not Qualified	212992 bit	4.5 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES			9.65 mm
MT42C4256F12/883C	Micron Technology	VIDEO DRAM	MILITARY	28	DFP	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT		120 mA	262144 words		5	5	4	FLATPACK	FL28,.4	Other Memory ICs	1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	R-XDFP-F28				Not Qualified	1048576 bit				.008 Amp		12 ns
MT42C4256DCJ12/883C	Micron Technology	VIDEO DRAM	MILITARY	28	SOJ	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	J BEND		120 mA	262144 words		5	5	4	SMALL OUTLINE	SOJ28,.44	Other Memory ICs	1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	R-XDSO-J28				Not Qualified	1048576 bit				.008 Amp		12 ns
MT42C4064EC-15/883C	Micron Technology	MEMORY CIRCUIT	MILITARY	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD		90 mA	65536 words		5	5	4	CHIP CARRIER	LCC28,.35X.55	Other Memory ICs	1.27 mm	125 Cel		64KX4	64K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	R-XQCC-N28				Not Qualified	262144 bit			e0	.006 Amp		150 ns
MT42C4256EC10/883C	Micron Technology	VIDEO DRAM	MILITARY	28	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD		130 mA	262144 words		5	5	4	SMALL OUTLINE	SOLCC28,.4	Other Memory ICs	1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	R-XDSO-N28				Not Qualified	1048576 bit				.008 Amp		10 ns
MT42C4256DCJ10XT	Micron Technology	VIDEO DRAM	MILITARY	28	SOJ	RECTANGULAR	CERAMIC	YES		CMOS		J BEND		130 mA	262144 words		5	5	4	SMALL OUTLINE	SOJ28,.44	Other Memory ICs	1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	R-XDSO-J28				Not Qualified	1048576 bit				.008 Amp		10 ns
5962-01-408-9851	Micron Technology	MEMORY CIRCUIT	MILITARY	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		90 mA	65536 words		5	5	4	IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	125 Cel		64KX4	64K	-55 Cel		DUAL	R-XDIP-T24				Not Qualified	262144 bit				.006 Amp		100 ns
MT42C4256DCJ10	Micron Technology	VIDEO DRAM	MILITARY	28	SOJ	RECTANGULAR	CERAMIC	YES		CMOS		J BEND		130 mA	262144 words		5	5	4	SMALL OUTLINE	SOJ28,.44	Other Memory ICs	1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	R-XDSO-J28				Not Qualified	1048576 bit				.008 Amp		10 ns
MT42C4256EC12XT	Micron Technology	VIDEO DRAM	MILITARY	28	SON	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD		120 mA	262144 words		5	5	4	SMALL OUTLINE	SOLCC28,.4	Other Memory ICs	1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	R-XDSO-N28				Not Qualified	1048576 bit				.008 Amp		12 ns
MT42C4256C10XT	Micron Technology	VIDEO DRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE		130 mA	262144 words		5	5	4	IN-LINE	DIP28,.4	Other Memory ICs	2.54 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	R-XDIP-T28				Not Qualified	1048576 bit				.008 Amp		10 ns
MT42C4064C-10/883C	Micron Technology	MEMORY CIRCUIT	MILITARY	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		90 mA	65536 words		5	5	4	IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	125 Cel		64KX4	64K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24				Not Qualified	262144 bit			e0	.006 Amp		100 ns
MT42C4064EC-10/883C	Micron Technology	MEMORY CIRCUIT	MILITARY	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD		90 mA	65536 words		5	5	4	CHIP CARRIER	LCC28,.35X.55	Other Memory ICs	1.27 mm	125 Cel		64KX4	64K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	R-XQCC-N28				Not Qualified	262144 bit			e0	.006 Amp		100 ns
MT42C4256C12XT	Micron Technology	VIDEO DRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE		120 mA	262144 words		5	5	4	IN-LINE	DIP28,.4	Other Memory ICs	2.54 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	R-XDIP-T28				Not Qualified	1048576 bit				.008 Amp		12 ns
MT42C4064C-15/883C	Micron Technology	MEMORY CIRCUIT	MILITARY	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		90 mA	65536 words		5	5	4	IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	125 Cel		64KX4	64K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24				Not Qualified	262144 bit			e0	.006 Amp		150 ns
MT42C4064C-20M070	Micron Technology	MEMORY CIRCUIT	MILITARY	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE		60 mA	65536 words		5	5	4	IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	125 Cel		64KX4	64K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24				Not Qualified	262144 bit			e0	.006 Amp		200 ns
MT42C4064C-15M070	Micron Technology	MEMORY CIRCUIT	MILITARY	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE		60 mA	65536 words		5	5	4	IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	125 Cel		64KX4	64K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24				Not Qualified	262144 bit			e0	.006 Amp		150 ns
MT42C4064EC-12/883C	Micron Technology	MEMORY CIRCUIT	MILITARY	28	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD		90 mA	65536 words		5	5	4	CHIP CARRIER	LCC28,.35X.55	Other Memory ICs	1.27 mm	125 Cel		64KX4	64K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	R-XQCC-N28				Not Qualified	262144 bit			e0	.006 Amp		120 ns
MT42C4256EC10	Micron Technology	VIDEO DRAM	MILITARY	28	SON	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD		130 mA	262144 words		5	5	4	SMALL OUTLINE	SOLCC28,.4	Other Memory ICs	1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	R-XDSO-N28				Not Qualified	1048576 bit				.008 Amp		10 ns
5962-01-383-1652	Micron Technology	MEMORY CIRCUIT	MILITARY	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		90 mA	65536 words		5	5	4	IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	125 Cel		64KX4	64K	-55 Cel		DUAL	R-XDIP-T24				Not Qualified	262144 bit				.006 Amp		120 ns
MT42C4256EC12	Micron Technology	VIDEO DRAM	MILITARY	28	SON	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD		120 mA	262144 words		5	5	4	SMALL OUTLINE	SOLCC28,.4	Other Memory ICs	1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	R-XDSO-N28				Not Qualified	1048576 bit				.008 Amp		12 ns
MT42C4256EC12/883C	Micron Technology	VIDEO DRAM	MILITARY	28	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD		120 mA	262144 words		5	5	4	SMALL OUTLINE	SOLCC28,.4	Other Memory ICs	1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	R-XDSO-N28				Not Qualified	1048576 bit				.008 Amp		12 ns
MT42C4256DCJ8/883C	Micron Technology	VIDEO DRAM	MILITARY	28	SOJ	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	J BEND		150 mA	262144 words		5	5	4	SMALL OUTLINE	SOJ28,.44	Other Memory ICs	1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	R-XDSO-J28				Not Qualified	1048576 bit				.008 Amp		8 ns
MT42C4256F8/883C	Micron Technology	VIDEO DRAM	MILITARY	28	DFP	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT		150 mA	262144 words		5	5	4	FLATPACK	FL28,.4	Other Memory ICs	1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	R-XDFP-F28				Not Qualified	1048576 bit				.008 Amp		8 ns
MT42C4256F10/883C	Micron Technology	VIDEO DRAM	MILITARY	28	DFP	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	FLAT		130 mA	262144 words		5	5	4	FLATPACK	FL28,.4	Other Memory ICs	1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	R-XDFP-F28				Not Qualified	1048576 bit				.008 Amp		10 ns
MT42C4256EC8/883C	Micron Technology	VIDEO DRAM	MILITARY	28	SON	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD		150 mA	262144 words		5	5	4	SMALL OUTLINE	SOLCC28,.4	Other Memory ICs	1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	R-XDSO-N28				Not Qualified	1048576 bit				.008 Amp		8 ns
MT42C4064C-20/883C	Micron Technology	MEMORY CIRCUIT	MILITARY	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		60 mA	65536 words		5	5	4	IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	125 Cel		64KX4	64K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24				Not Qualified	262144 bit			e0	.006 Amp		200 ns
MT42C4256DCJ10/883C	Micron Technology	VIDEO DRAM	MILITARY	28	SOJ	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	J BEND		130 mA	262144 words		5	5	4	SMALL OUTLINE	SOJ28,.44	Other Memory ICs	1.27 mm	125 Cel		256KX4	256K	-55 Cel		DUAL	R-XDSO-J28				Not Qualified	1048576 bit				.008 Amp		10 ns
MT42C4064C-12M070	Micron Technology	MEMORY CIRCUIT	MILITARY	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE		60 mA	65536 words		5	5	4	IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	125 Cel		64KX4	64K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24				Not Qualified	262144 bit			e0	.006 Amp		120 ns
MT42C4064C-12/883C	Micron Technology	MEMORY CIRCUIT	MILITARY	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE		90 mA	65536 words		5	5	4	IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	125 Cel		64KX4	64K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T24				Not Qualified	262144 bit			e0	.006 Amp		120 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.