Microchip Technology Other Function Memory ICs 39

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Maximum Access Time
47L16-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	2048 words		EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm	3.9 mm		16384 bit	2.7 V	e3	40	260	4.9 mm	400 ns
47L16-I/ST	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	2048 words		EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	85 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	3 mm		16384 bit	2.7 V	e3	40	260	4.4 mm	400 ns
47L16-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	2048 words		EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	125 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm	3.9 mm		16384 bit	2.7 V	e3	40	260	4.9 mm	400 ns
47L16T-I/ST	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	2048 words		EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	85 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	3 mm		16384 bit	2.7 V	e3	40	260	4.4 mm	400 ns
47L16-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	2048 words		EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	125 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	3 mm		16384 bit	2.7 V	e3	40	260	4.4 mm	400 ns
47L16T-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	2048 words		EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm	3.9 mm		16384 bit	2.7 V	e3	40	260	4.9 mm	400 ns
47L64-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	8192 words	3.3	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel	8KX8	8K	-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.75 mm	3.9 mm		65536 bit	2.7 V				4.9 mm	550 ns
47L16T-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	2048 words		EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	125 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm	3.9 mm		16384 bit	2.7 V	e3	40	260	4.9 mm	400 ns
47C16-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	2048 words	5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm	3.9 mm		16384 bit	4.5 V	e3	40	260	4.9 mm	400 ns
47L16-E/P	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	2048 words		EEPROM+SRAM		8	IN-LINE	DIP8,.3		2.54 mm	125 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		3.6 V	5.334 mm	7.62 mm		16384 bit	2.7 V	e3			9.271 mm	400 ns
47L16-I/P	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	2048 words		EEPROM+SRAM		8	IN-LINE	DIP8,.3		2.54 mm	85 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		3.6 V	5.334 mm	7.62 mm		16384 bit	2.7 V	e3			9.271 mm	400 ns
47C16T-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	2048 words	5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm	3.9 mm		16384 bit	4.5 V	e3	40	260	4.9 mm	400 ns
AT88SC0104CA-SH-T	Microchip Technology	CRYPTO MEMORY		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	128 words				8	SMALL OUTLINE	SOP8,.25		1.27 mm	85 Cel	128X8	128	-40 Cel	MATTE TIN	DUAL		R-PDSO-G8		3.6 V	1.75 mm	3.9 mm		1024 bit	2.7 V	e3			4.9 mm
47C04T-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	512 words	5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	125 Cel	512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm	3.9 mm		4096 bit	4.5 V	e3	40	260	4.9 mm	400 ns
47L04-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	512 words		EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel	512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	3.6 V	1.75 mm	3.9 mm		4096 bit	2.7 V	e3	40	260	4.9 mm	400 ns
47C04-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	512 words	5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel	512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm	3.9 mm		4096 bit	4.5 V	e3	40	260	4.9 mm	400 ns
AT88SC0204C-MJ	Microchip Technology	CRYPTO MEMORY	COMMERCIAL	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SYNCHRONOUS	256 words				8	UNCASED CHIP	DIE OR CHIP			70 Cel	256X8	256	0 Cel	Nickel/Gold (Ni/Au)	UPPER	1	R-XUUC-N8	1	5.5 V				2048 bit	2.7 V	e4				35 ns
AT88SC25616C-SU	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	32768 words				8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel	32KX8	32K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.75 mm	3.9 mm		262144 bit	2.7 V	e3			4.925 mm	35 ns
47C04-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	512 words	5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	125 Cel	512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm	3.9 mm		4096 bit	4.5 V	e3	40	260	4.9 mm	400 ns
47C04T-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	512 words	5	EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	125 Cel	512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm	3 mm		4096 bit	4.5 V	e3	40	260	4.4 mm	400 ns
47C04T-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	512 words	5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel	512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm	3.9 mm		4096 bit	4.5 V	e3	40	260	4.9 mm	400 ns
47L04-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	512 words		EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	125 Cel	512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	3 mm		4096 bit	2.7 V	e3	40	260	4.4 mm	400 ns
AT88SC25616C-MJ	Microchip Technology	CRYPTO MEMORY	COMMERCIAL	8	XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SYNCHRONOUS	32768 words				8	MICROELECTRONIC ASSEMBLY	MODULE,8LEAD,.46			70 Cel	32KX8	32K	0 Cel	Nickel/Gold (Ni/Au)	UNSPECIFIED	1	R-XXMA-X8		5.5 V				262144 bit	2.7 V	e4				35 ns
AT88SC25616C-MJTG	Microchip Technology	CRYPTO MEMORY	COMMERCIAL	8	XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SYNCHRONOUS	32768 words				8	MICROELECTRONIC ASSEMBLY	MODULE,8LEAD,.46			70 Cel	32KX8	32K	0 Cel	MATTE TIN	UNSPECIFIED	1	R-XXMA-X8		5.5 V				262144 bit	2.7 V					35 ns
47C04-I/ST	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	512 words	5	EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	85 Cel	512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm	3 mm		4096 bit	4.5 V	e3	40	260	4.4 mm	400 ns
47C04-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	512 words	5	EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	125 Cel	512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm	3 mm		4096 bit	4.5 V	e3	40	260	4.4 mm	400 ns
47L16T-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	2048 words		EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	125 Cel	2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	3 mm		16384 bit	2.7 V	e3	40	260	4.4 mm	400 ns
AT88SC0104CA-SH	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	128 words			3/3.3	8	SMALL OUTLINE	SOP8,.23	EEPROMs	1.27 mm	85 Cel	128X8	128	-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.75 mm	3.9 mm	Not Qualified	1024 bit	2.7 V				4.9 mm	250 ns
AT88SC25616C-SU-T	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	32768 words				8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel	32KX8	32K	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G8		5.5 V	1.75 mm	3.9 mm		262144 bit	2.7 V	e3			4.925 mm	35 ns
AT88SC018-SU-CM-T	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	4096 words				1	SMALL OUTLINE	SOP8,.25		1.27 mm	85 Cel	4KX1	4K	-40 Cel	MATTE TIN	DUAL		R-PDSO-G8		3.6 V	1.75 mm	3.9 mm	Not Qualified	4096 bit	2.7 V	e3			4.925 mm
AT29C1024	Microchip Technology	MEMORY CIRCUIT		44		UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		UNSPECIFIED	ASYNCHRONOUS	65536 words	5	EPROM+FLASH		16						64KX16	64K			QUAD		X-XQCC-X44		5.5 V				1048576 bit	4.5 V					70 ns
47L04T-I/ST	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	512 words		EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	85 Cel	512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm	3 mm		4096 bit	2.7 V	e3	40	260	4.4 mm	400 ns
AT88SC0104C-SH-T	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	128 words				8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel	128X8	128	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G8		5.5 V	1.75 mm	3.9 mm		1024 bit	2.7 V	e4			4.925 mm	35 ns
AT88SC0104CA-Y6H-T	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SYNCHRONOUS	128 words			3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs	.5 mm	85 Cel	128X8	128	-40 Cel		DUAL	1	R-XDSO-N8		3.6 V	.6 mm	2 mm	Not Qualified	1024 bit	2.7 V				3 mm	250 ns
AT88SC018-SU-CN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	4096 words				1	SMALL OUTLINE	SOP8,.25		1.27 mm	85 Cel	4KX1	4K	-40 Cel	MATTE TIN	DUAL		R-PDSO-G8		3.6 V	1.75 mm	3.9 mm	Not Qualified	4096 bit	2.7 V	e3			4.925 mm
AT88SC0204CA-SH-T	Microchip Technology	CRYPTO MEMORY		8	SOP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		GULL WING	SYNCHRONOUS	256 words				8	SMALL OUTLINE	SOP8,.25		1.27 mm	85 Cel	256X8	256	-40 Cel	MATTE TIN	DUAL		R-PDSO-G8		3.6 V	1.75 mm	3.9 mm		2048 bit	2.7 V	e3			4.9 mm
AT88SC0404CA-SH	Microchip Technology	CRYPTO MEMORY	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	512 words	3.3			8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel	512X8	512	-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.75 mm	3.9 mm		4096 bit	2.7 V				4.9 mm	250 ns
AT88SC0808CA-SH	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS	1024 words			3/3.3	8	SMALL OUTLINE	SOP8,.23	EEPROMs	1.27 mm	85 Cel	1KX8	1K	-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.75 mm	3.9 mm	Not Qualified	8192 bit	2.7 V				4.9 mm	250 ns
USBF129T-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SYNCHRONOUS	524288 words				8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel	512KX8	512K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8		3.6 V	1.75 mm	3.9 mm		4194304 bit	2.7 V	e3			4.9 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.