Micron Technology Other Function Memory ICs 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MT29F4G01ADAGDWB-IT:GTR	Micron Technology	MEMORY CIRCUIT																																									NOT SPECIFIED	NOT SPECIFIED
MT29GZ5A5BPGGA-53IT.87J	Micron Technology	MEMORY CIRCUIT		149	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		1.8	FLASH+LPDDR		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA149,14X16,20		.5 mm	85 Cel		256MX16	256M	-40 Cel		BOTTOM	R-PBGA-B149	1.95 V	.8 mm		8 mm		4294967296 bit	1.7 V						9.5 mm
MT29F4G01ADAGDWB-IT:G	Micron Technology	MEMORY CIRCUIT																																									NOT SPECIFIED	NOT SPECIFIED
MT29C4G48MAZBAAKQ-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs	.5 mm	85 Cel		256MX16	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168	1.9 V	.75 mm		12 mm	Not Qualified	4294967296 bit	1.7 V		e1				12 mm	25 ns
MT29C8G96MAZBADKD-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	137	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		1.8			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX32	64M	-25 Cel		BOTTOM	R-PBGA-B137	1.95 V	1.1 mm		10.5 mm		2147483648 bit	1.7 V	ALSO ORGANISED AS 128M X 16		NOT SPECIFIED	NOT SPECIFIED		13 mm
MT29GZ5A5BPGGA-046IT.87J	Micron Technology	MEMORY CIRCUIT		149	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		1.8	FLASH+LPDDR		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA149,14X16,20		.5 mm	85 Cel		256MX16	256M	-40 Cel		BOTTOM	R-PBGA-B149	1.95 V	.8 mm		8 mm		4294967296 bit	1.7 V						9.5 mm
MT29PZZZ4D4BKEPK-18W.94H	Micron Technology	MEMORY CIRCUIT
MT29C4G96MAZBACJG-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20	Other Memory ICs	.5 mm	85 Cel		256MX16	256M	-25 Cel		BOTTOM	S-PBGA-B168	1.95 V	.9 mm		12 mm	Not Qualified	4294967296 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE		NOT SPECIFIED	NOT SPECIFIED		12 mm	25 ns
MT38W2011AA033JZZI.X68	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	52	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		4194304 words		1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B52	1.95 V	1.2 mm		4 mm		67108864 bit	1.7 V	IT ALSO CONTAINS 16MBIT(1MBIT X 16) PSRAM					6 mm
MT38W2021A902ZQXZI.X69	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	88	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		4194304 words					16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B88	1.95 V	1.2 mm		8 mm		67108864 bit	1.7 V	IT ALSO CONTAINS 32MBIT(2MBIT X 16) PSRAM					10 mm
MT43A4G40200NFA-S15:A	Micron Technology	MEMORY CIRCUIT	OTHER	896	BGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		4294967296 words		1.2			4	GRID ARRAY			1 mm	105 Cel		4GX4	4G	0 Cel		BOTTOM	S-PBGA-B896	1.26 V	4.2 mm		31 mm		17179869184 bit	1.14 V	IT ALSO OPERATES AT LOGIC OPERATING TEMPERATURE 0 TO 110 DEG CENTIGRADE		NOT SPECIFIED	NOT SPECIFIED		31 mm
MTFDHBL128TDP-1AT12AIYYTR	Micron Technology	MEMORY CIRCUIT
MTFDHBM1T0TDQ-1AT12ATYYTR	Micron Technology	MEMORY CIRCUIT
MT29C4G48MAZBBAKS-48IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	137	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B137	1.95 V	1 mm		10.5 mm		4294967296 bit	1.7 V	IT IS ALSO HAVING 2GBIT (X 32) LPDDR	e1	30	260		13 mm
MTFC16GLTDV-WT	Micron Technology		OTHER	169	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES				BALL							1.8/3.3,3/3.3		GRID ARRAY, FINE PITCH	BGA169,14X28,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B169					Not Qualified	137438953472 bit
MTFC2GMTEA-WT	Micron Technology		OTHER	153	FBGA		SQUARE	PLASTIC/EPOXY	YES				BALL							1.8/3.3,3/3.3		GRID ARRAY, FINE PITCH	BGA153,14X14,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel		BOTTOM	S-PBGA-B153					Not Qualified	17179869184 bit
MTFDHBL256TDP-1AT12AIYYTR	Micron Technology	MEMORY CIRCUIT
MTFDHBL512TDQ-1AT12ATYYTR	Micron Technology	MEMORY CIRCUIT
MTFC16GLTAM-WT	Micron Technology		OTHER	153	FBGA		SQUARE	PLASTIC/EPOXY	YES				BALL							1.8/3.3,3/3.3		GRID ARRAY, FINE PITCH	BGA153,14X14,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel		BOTTOM	S-PBGA-B153					Not Qualified	137438953472 bit
MTFC32GLTDM-WT	Micron Technology		OTHER	153	FBGA		SQUARE	PLASTIC/EPOXY	YES				BALL							1.8/3.3,3/3.3		GRID ARRAY, FINE PITCH	BGA153,14X14,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel		BOTTOM	S-PBGA-B153					Not Qualified	274877906944 bit
MTFDHBM1T0TDP-1AT12AIYYTR	Micron Technology	MEMORY CIRCUIT
MTFDHAL3T8TDP-1AT1ZABYY	Micron Technology
CT1000MX500SSD1	Micron Technology	MEMORY CIRCUIT	COMMERCIAL				RECTANGULAR	UNSPECIFIED		1	CMOS			ASYNCHRONOUS		1099511627776 words					8					70 Cel		1TX8	1T	0 Cel									8796093022208 bit				NOT SPECIFIED	NOT SPECIFIED
MT29C4G48MAZBBAKB-48IT	Micron Technology	MEMORY CIRCUIT		168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		1.8	FLASH+LPDDR		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20		.5 mm	85 Cel		256MX16	256M	-40 Cel		BOTTOM	S-PBGA-B168	1.95 V	.8 mm		12 mm		4294967296 bit	1.7 V	IT IS ALSO HAVING 2GBIT (X 32) LPDDR		NOT SPECIFIED	NOT SPECIFIED		12 mm
MT29PZZZ8D5BKFTF-18W.95L	Micron Technology	MEMORY CIRCUIT	OTHER	162	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		3.3			32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		128MX32	128M	-30 Cel		BOTTOM	R-PBGA-B162	3.6 V	1 mm		11.5 mm		4294967296 bit	2.7 V	ALSO ORGANISED AS 256M X 16					13 mm
MT42C4064Z-15	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	24	ZIP		RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE		60 mA	65536 words		5		5	4	IN-LINE	ZIP24,.1	Other Memory ICs	1.27 mm	70 Cel		64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T24					Not Qualified	262144 bit			e0			.004 Amp		150 ns
MTFDDAK256TDL-1AW1ZABYY	Micron Technology	MEMORY CIRCUIT
MT18VDDF12872DY-335F1	Micron Technology		COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		NO LEAD		5220 mA	134217728 words	COMMON	2.5		2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	R-PDMA-N184			166 MHz		Not Qualified	9663676416 bit						.09 Amp		.7 ns
MT29C4G48MAYBBAKS-48IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	137	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B137	1.95 V	1 mm		10.5 mm		4294967296 bit	1.7 V	IT IS ALSO HAVING 2GBIT (X 32) LPDDR	e1	30	260		13 mm
MT29C4G48MAZBAAKQ-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		256MX16	256M	-25 Cel		BOTTOM	S-PBGA-B168	1.95 V	.75 mm		12 mm		4294967296 bit	1.7 V	MOBILE LPDDR DEVICE ALSO AVAILABLE		NOT SPECIFIED	NOT SPECIFIED		12 mm
MT38W2011A901ZQXZI.X68	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	88	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		4194304 words					16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B88	1.95 V	1.2 mm		8 mm		67108864 bit	1.7 V	IT ALSO CONTAINS 16MBIT(1MBIT X 16) PSRAM					10 mm
MTFDDAK7T6QDE-2AV1ZABYY	Micron Technology	MEMORY CIRCUIT
NAND08GAH0FZC5E	Micron Technology		OTHER	153	FBGA		SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL							1.8/3.3,3.3		GRID ARRAY, FINE PITCH	BGA153,14X14,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel		BOTTOM	S-PBGA-B153					Not Qualified	8589934592 bit
MT29C1G12MAAJVAMD-5ITTR	Micron Technology	MEMORY CIRCUIT																																									NOT SPECIFIED	NOT SPECIFIED
MT29C4G96MAZAPCJG-5IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		256MX16	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B168	1.95 V	.9 mm		12 mm		4294967296 bit	1.7 V		e1				12 mm
MT29GZ6A6BPIET-046AIT.112	Micron Technology	MEMORY CIRCUIT		149	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words		1.8	FLASH+LPDDR		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA149,14X16,20		.5 mm	85 Cel		512MX16	512M	-40 Cel		BOTTOM	R-PBGA-B149	1.95 V	1 mm		8 mm		8589934592 bit	1.7 V						9.5 mm	3.5 ns
MT29GZ6A6BPIET-53AAT.112	Micron Technology	MEMORY CIRCUIT		149	VFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words		1.8	FLASH+LPDDR		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA149,14X16,20		.5 mm	105 Cel		512MX16	512M	-40 Cel		BOTTOM	R-PBGA-B149	1.95 V	1 mm		8 mm		8589934592 bit	1.7 V						9.5 mm	3.5 ns
MTFDDAK1T9QDE-2AV1ZABYY	Micron Technology	MEMORY CIRCUIT
MTFDDAK512TDL-1AW12ABYY	Micron Technology	MEMORY CIRCUIT
MTFDHAL15T3TDP-1AT1ZABYY	Micron Technology
MTFDHBL064TDP-1AT12AIYY	Micron Technology	MEMORY CIRCUIT
NP8P128AE3T1760E	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	64	TBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		3			8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm		8 mm		134217728 bit	2.7 V						10 mm
MT28C256532W18SBT-F606P85BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm		9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MT28C64432W18ABW-F70P85TWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		4194304 words		1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77	1.95 V	1.2 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 2M X 16	e1		260	.000135 Amp	10 mm	85 ns
MT28C256564W18TFT-F706P706TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm		9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
MT9HTF6472FY-53EB2D1	Micron Technology		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		NO LEAD			67108864 words	COMMON			1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	R-PDMA-N240			266 MHz		Not Qualified	4831838208 bit
MT28C256564W18SBT-F606P85BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS		8388608 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88	1.95 V	1.4 mm		9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1				12 mm
NANDA8R3N0AZQA5F	Micron Technology	MEMORY CIRCUIT	OTHER	152	FBGA		SQUARE	PLASTIC/EPOXY	YES				BALL					1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA152,21X21,25	Other Memory ICs	.635 mm	85 Cel				-30 Cel		BOTTOM	S-PBGA-B152					Not Qualified

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.