Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Length | Maximum Access Time | Programming Voltage (V) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microchip Technology |
OTP ROM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
-40 Cel |
MATTE TIN |
DUAL |
1 |
R-PDIP-T28 |
5.5 V |
6.35 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
.001 Amp |
37.4015 mm |
70 ns |
5 |
||||||||||||||
|
Microchip Technology |
OTP ROM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
65536 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
-40 Cel |
MATTE TIN |
DUAL |
1 |
R-PDIP-T28 |
5.5 V |
6.35 mm |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
e3 |
.0001 Amp |
37.4015 mm |
70 ns |
5 |
||||||||||||||
|
Microchip Technology |
OTP ROM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
-40 Cel |
MATTE TIN |
DUAL |
1 |
R-PDIP-T28 |
5.5 V |
6.35 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
.001 Amp |
37.4015 mm |
45 ns |
5 |
||||||||||||||
|
Microchip Technology |
OTP ROM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
65536 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
-40 Cel |
MATTE TIN |
DUAL |
1 |
R-PDIP-T28 |
5.5 V |
6.35 mm |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
e3 |
.0001 Amp |
37.4015 mm |
45 ns |
5 |
||||||||||||||
|
Microchip Technology |
OTP ROM |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
25 mA |
131072 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
-40 Cel |
MATTE TIN |
DUAL |
1 |
R-PDIP-T32 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
.00001 Amp |
42.037 mm |
70 ns |
13 |
||||||||||||||
|
Microchip Technology |
OTP ROM |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
524288 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
-40 Cel |
MATTE TIN |
DUAL |
1 |
R-PDIP-T32 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
e3 |
.0001 Amp |
42.037 mm |
70 ns |
13 |
||||||||||||||
|
Microchip Technology |
OTP ROM |
INDUSTRIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
-40 Cel |
MATTE TIN |
DUAL |
1 |
R-PDIP-T40 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
.0001 Amp |
52.324 mm |
70 ns |
13 |
||||||||||||||
|
STMicroelectronics |
OTP ROM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDIP-T28 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
e3 |
.0001 Amp |
36.83 mm |
90 ns |
||||||||||||||||
Atmel |
OTP ROM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
65536 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
e0 |
.0001 Amp |
36.95 mm |
90 ns |
||||||||||||||||
|
Microchip Technology |
OTP ROM |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
25 mA |
262144 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
256KX8 |
256K |
-40 Cel |
MATTE TIN |
DUAL |
1 |
R-PDIP-T32 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
2097152 bit |
4.5 V |
e3 |
.0001 Amp |
42.037 mm |
55 ns |
13 |
||||||||||||||
Atmel |
OTP ROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
65536 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
e0 |
.0001 Amp |
36.95 mm |
70 ns |
||||||||||||||||
|
Microchip Technology |
OTP ROM |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
25 mA |
262144 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
256KX8 |
256K |
-40 Cel |
MATTE TIN |
DUAL |
1 |
R-PDIP-T32 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
2097152 bit |
4.5 V |
e3 |
.0001 Amp |
42.037 mm |
90 ns |
13 |
||||||||||||||
Atmel |
OTP ROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
65536 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
e0 |
.0001 Amp |
36.95 mm |
150 ns |
||||||||||||||||
Defense Logistics Agency |
OTP ROM |
MILITARY |
24 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
SYNCHRONOUS |
512 words |
5 |
8 |
IN-LINE |
125 Cel |
512X8 |
512 |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T24 |
5.5 V |
Qualified |
4096 bit |
4.5 V |
e0 |
|||||||||||||||||||||||||||||
Defense Logistics Agency |
OTP ROM |
MILITARY |
24 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
SYNCHRONOUS |
512 words |
5 |
8 |
IN-LINE |
125 Cel |
512X8 |
512 |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T24 |
5.5 V |
Qualified |
4096 bit |
4.5 V |
e0 |
|||||||||||||||||||||||||||||
|
Microchip Technology |
OTP ROM |
INDUSTRIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
-40 Cel |
MATTE TIN |
DUAL |
1 |
R-PDIP-T40 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
.0001 Amp |
52.324 mm |
45 ns |
13 |
||||||||||||||
Atmel |
OTP ROM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
65536 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
e0 |
.0001 Amp |
37.0205 mm |
45 ns |
||||||||||||||||
|
Microchip Technology |
OTP ROM |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
40 mA |
1048576 words |
COMMON |
5 |
8 |
IN-LINE |
DIP32,.6 |
2.54 mm |
85 Cel |
3-STATE |
1MX8 |
1M |
-40 Cel |
MATTE TIN |
DUAL |
1 |
R-PDIP-T32 |
5.5 V |
4.826 mm |
15.24 mm |
8388608 bit |
4.5 V |
.0001 Amp |
42.037 mm |
90 ns |
13 |
||||||||||||||||||
|
Microchip Technology |
OTP ROM |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
524288 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
-40 Cel |
MATTE TIN |
DUAL |
1 |
R-PDIP-T32 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
e3 |
.0001 Amp |
42.037 mm |
90 ns |
13 |
||||||||||||||
Atmel |
OTP ROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
65536 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
e0 |
.0001 Amp |
36.95 mm |
120 ns |
||||||||||||||||
Atmel |
OTP ROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
65536 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
e0 |
.0001 Amp |
36.95 mm |
45 ns |
||||||||||||||||
Atmel |
OTP ROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
65536 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
e0 |
.0001 Amp |
36.95 mm |
55 ns |
||||||||||||||||
|
STMicroelectronics |
OTP ROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
e0 |
.0001 Amp |
36.83 mm |
120 ns |
||||||||||||||||
|
Microchip Technology |
OTP ROM |
INDUSTRIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
40 mA |
262144 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
-40 Cel |
MATTE TIN |
DUAL |
1 |
R-PDIP-T40 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
e3 |
.0001 Amp |
52.324 mm |
90 ns |
13 |
||||||||||||||
Atmel |
OTP ROM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
.0001 Amp |
36.95 mm |
120 ns |
13 |
|||||||||||||||
|
STMicroelectronics |
OTP ROM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
35 mA |
262144 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
256KX8 |
256K |
0 Cel |
MATTE TIN |
DUAL |
R-PDIP-T32 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
2097152 bit |
4.5 V |
e3 |
.0001 Amp |
41.91 mm |
100 ns |
||||||||||||||||
STMicroelectronics |
OTP ROM |
MILITARY |
24 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
SYNCHRONOUS |
2048 words |
5 |
8 |
IN-LINE |
2.54 mm |
125 Cel |
2KX8 |
2K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T24 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
16384 bit |
4.5 V |
e0 |
31.877 mm |
15 ns |
|||||||||||||||||||||||
Intersil |
OTP ROM |
COMMERCIAL |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
THROUGH-HOLE |
130 mA |
256 words |
5 |
5 |
4 |
IN-LINE |
DIP16,.3 |
OTP ROMs |
2.54 mm |
70 Cel |
256X4 |
256 |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T16 |
Not Qualified |
1024 bit |
e0 |
45 ns |
||||||||||||||||||||||||||||
Harris Semiconductor |
OTP ROM |
COMMERCIAL |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
THROUGH-HOLE |
130 mA |
256 words |
5 |
5 |
4 |
IN-LINE |
DIP16,.3 |
OTP ROMs |
2.54 mm |
70 Cel |
256X4 |
256 |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T16 |
Not Qualified |
1024 bit |
e0 |
45 ns |
||||||||||||||||||||||||||||
Atmel |
OTP ROM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
25 mA |
32768 words |
COMMON |
5 |
3.3/5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
262144 bit |
3 V |
e0 |
.00002 Amp |
36.95 mm |
250 ns |
13 |
||||||||||||||||
Rochester Electronics |
OTP ROM |
COMMERCIAL EXTENDED |
20 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
BIPOLAR |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
512 words |
5 |
8 |
IN-LINE |
2.54 mm |
75 Cel |
512X8 |
512 |
0 Cel |
DUAL |
R-PDIP-T20 |
5.25 V |
5.08 mm |
7.62 mm |
4096 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
26.035 mm |
35 ns |
|||||||||||||||||||||||||
|
STMicroelectronics |
OTP ROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
e0 |
.0001 Amp |
36.83 mm |
90 ns |
||||||||||||||||
Microchip Technology |
OTP ROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
32768 words |
COMMON |
5 |
3.3/5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
4.83 mm |
15.24 mm |
Not Qualified |
262144 bit |
3 V |
DATA RETENTION >200 YEARS |
e0 |
.0001 Amp |
36.32 mm |
250 ns |
13 |
|||||||||||||||
Atmel |
OTP ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T40 |
1 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.0001 Amp |
52.2 mm |
70 ns |
||||||||||||||||
Atmel |
OTP ROM |
INDUSTRIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T40 |
1 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
30 |
225 |
.0001 Amp |
52.324 mm |
70 ns |
||||||||||||||
Atmel |
OTP ROM |
INDUSTRIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T40 |
1 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
30 |
225 |
.0001 Amp |
52.324 mm |
45 ns |
||||||||||||||
|
Microchip Technology |
OTP ROM |
INDUSTRIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
40 mA |
262144 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
-40 Cel |
DUAL |
1 |
R-PDIP-T40 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.0001 Amp |
52.324 mm |
55 ns |
13 |
|||||||||||||||
Atmel |
OTP ROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
.0001 Amp |
36.95 mm |
55 ns |
13 |
|||||||||||||||
Atmel |
OTP ROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
.0001 Amp |
36.95 mm |
70 ns |
13 |
|||||||||||||||
Atmel |
OTP ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
40 mA |
262144 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T40 |
1 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.0001 Amp |
52.2 mm |
120 ns |
||||||||||||||||
Atmel |
OTP ROM |
INDUSTRIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
40 mA |
262144 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T40 |
1 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.0001 Amp |
52.324 mm |
90 ns |
||||||||||||||||
Defense Logistics Agency |
OTP ROM |
MILITARY |
24 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
1024 words |
5 |
5 |
8 |
IN-LINE |
DIP24,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
1KX8 |
1K |
-55 Cel |
Tin/Lead (Sn/Pb) - hot dipped |
DUAL |
R-GDIP-T24 |
5.5 V |
Qualified |
8192 bit |
4.5 V |
e0 |
.12 Amp |
45 ns |
|||||||||||||||||||||
Defense Logistics Agency |
OTP ROM |
MILITARY |
24 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
SYNCHRONOUS |
1024 words |
5 |
8 |
IN-LINE |
125 Cel |
1KX8 |
1K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T24 |
5.5 V |
Qualified |
8192 bit |
4.5 V |
e0 |
20 ns |
||||||||||||||||||||||||||||
Atmel |
OTP ROM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
35 mA |
131072 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T32 |
1 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.00001 Amp |
42.037 mm |
70 ns |
||||||||||||||||
Cypress Semiconductor |
OTP ROM |
MILITARY |
24 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
90 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T24 |
1 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
16384 bit |
4.5 V |
e0 |
.04 Amp |
31.877 mm |
35 ns |
12.5 |
||||||||||||||
National Semiconductor |
OTP ROM |
COMMERCIAL |
20 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
BIPOLAR |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
256 words |
5 |
5 |
8 |
IN-LINE |
DIP20,.3 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
256X8 |
256 |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T20 |
5.25 V |
5.08 mm |
7.62 mm |
Not Qualified |
2048 bit |
4.75 V |
e0 |
26.075 mm |
60 ns |
||||||||||||||||||||
Teledyne E2v (Uk) |
OTP ROM |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
BIPOLAR |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
COMMON |
5 |
8 |
IN-LINE |
DIP24,.3 |
2.54 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
0 Cel |
DUAL |
R-PDIP-T24 |
5.5 V |
5.08 mm |
7.62 mm |
16384 bit |
4.5 V |
32.51 mm |
15 ns |
5 |
|||||||||||||||||||||||
|
STMicroelectronics |
OTP ROM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
0 Cel |
MATTE TIN |
DUAL |
R-PDIP-T32 |
5.25 V |
4.83 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.75 V |
e3 |
.0001 Amp |
42.035 mm |
45 ns |
OTP ROM, or One-Time Programmable Read-Only Memory, is a type of non-volatile computer memory that is programmed once and cannot be reprogrammed. OTP ROM is used to store data that needs to be permanently stored and cannot be changed or updated in the future.
OTP ROM is created using a process similar to that used to manufacture Mask ROM. However, instead of programming the memory during the manufacturing process, OTP ROM is programmed after the manufacturing process, but before it is delivered to the customer. This allows the customer to program the memory with the data that they need to store permanently.
OTP ROM is commonly used in devices such as microcontrollers, smart cards, and other electronic devices that require permanent storage of data. It is ideal for storing critical data, such as system settings, encryption keys, and other sensitive information that needs to be permanently stored and cannot be changed or updated in the future.