Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Length | Maximum Access Time | Programming Voltage (V) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
OTP ROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
0 Cel |
DUAL |
R-PDIP-T28 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
.0001 Amp |
36.83 mm |
150 ns |
||||||||||||||||||
|
STMicroelectronics |
OTP ROM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
e0 |
.0001 Amp |
36.83 mm |
150 ns |
||||||||||||||||
Atmel |
OTP ROM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
524288 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T32 |
1 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.0001 Amp |
42.05 mm |
150 ns |
||||||||||||||||
Atmel |
OTP ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
40 mA |
262144 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T40 |
1 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.0001 Amp |
52.2 mm |
90 ns |
||||||||||||||||
|
STMicroelectronics |
OTP ROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
MATTE TIN |
DUAL |
R-PDIP-T28 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
.0001 Amp |
36.83 mm |
90 ns |
12.75 |
|||||||||||||||
Advanced Micro Devices |
MEMORY CIRCUIT |
MILITARY |
20 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
MIL-STD-883 Class B (Modified) |
THROUGH-HOLE |
512 words |
5 |
5 |
8 |
IN-LINE |
DIP20,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
512X8 |
512 |
-55 Cel |
DUAL |
R-XDIP-T20 |
Not Qualified |
4096 bit |
70 ns |
||||||||||||||||||||||||||||||
Advanced Micro Devices |
MEMORY CIRCUIT |
MILITARY |
20 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
MIL-STD-883 Class B (Modified) |
THROUGH-HOLE |
512 words |
5 |
5 |
8 |
IN-LINE |
DIP20,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
512X8 |
512 |
-55 Cel |
DUAL |
R-XDIP-T20 |
Not Qualified |
4096 bit |
70 ns |
||||||||||||||||||||||||||||||
Advanced Micro Devices |
OTP ROM |
COMMERCIAL EXTENDED |
20 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
BIPOLAR |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
160 mA |
512 words |
5 |
5 |
8 |
IN-LINE |
DIP20,.3 |
OTP ROMs |
2.54 mm |
75 Cel |
3-STATE |
512X8 |
512 |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T20 |
5.25 V |
5.08 mm |
7.62 mm |
Not Qualified |
4096 bit |
4.75 V |
e0 |
26.035 mm |
35 ns |
|||||||||||||||||||
|
Atmel |
OTP ROM |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
35 mA |
131072 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDIP-T32 |
1 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
245 |
.00001 Amp |
42.037 mm |
45 ns |
||||||||||||||
Atmel |
OTP ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T40 |
1 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.0001 Amp |
52.2 mm |
150 ns |
||||||||||||||||
Atmel |
OTP ROM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
30 |
225 |
.0001 Amp |
37.0205 mm |
70 ns |
13 |
|||||||||||||
Atmel |
OTP ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
40 mA |
262144 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T40 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.0001 Amp |
52.2 mm |
100 ns |
|||||||||||||||||
Atmel |
OTP ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
40 mA |
262144 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T40 |
1 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.0001 Amp |
52.2 mm |
150 ns |
||||||||||||||||
Atmel |
OTP ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
40 mA |
262144 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T40 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.0001 Amp |
52.2 mm |
85 ns |
|||||||||||||||||
Cypress Semiconductor |
OTP ROM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
100 mA |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.3 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T24 |
5.5 V |
Not Qualified |
32768 bit |
4.5 V |
e0 |
25 ns |
|||||||||||||||||||||
Intersil |
OTP ROM |
MILITARY |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
MIL-STD-883 Class B (Modified) |
THROUGH-HOLE |
512 words |
5 |
5 |
4 |
IN-LINE |
DIP16,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
512X4 |
512 |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T16 |
Not Qualified |
2048 bit |
e0 |
70 ns |
||||||||||||||||||||||||||||
|
STMicroelectronics |
OTP ROM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
0 Cel |
MATTE TIN |
DUAL |
R-PDIP-T32 |
5.5 V |
4.83 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
.0001 Amp |
42.035 mm |
100 ns |
||||||||||||||||
|
STMicroelectronics |
OTP ROM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
524288 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
MATTE TIN |
DUAL |
R-PDIP-T32 |
5.5 V |
4.83 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
e3 |
.0001 Amp |
42.035 mm |
100 ns |
||||||||||||||||
Atmel |
OTP ROM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
.0001 Amp |
37.0205 mm |
45 ns |
13 |
|||||||||||||||
NXP Semiconductors |
OTP ROM |
MILITARY |
16 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
BIPOLAR |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
32 words |
5 |
8 |
IN-LINE |
2.54 mm |
125 Cel |
3-STATE |
32X8 |
32 |
-55 Cel |
DUAL |
R-GDIP-T16 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
256 bit |
4.5 V |
19.535 mm |
50 ns |
|||||||||||||||||||||||||
Atmel |
OTP ROM |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
524288 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T32 |
1 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.0001 Amp |
42.037 mm |
90 ns |
||||||||||||||||
Atmel |
OTP ROM |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
35 mA |
131072 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T32 |
1 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.00001 Amp |
42.05 mm |
150 ns |
||||||||||||||||
Atmel |
OTP ROM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
65536 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
e0 |
.0001 Amp |
36.95 mm |
120 ns |
|||||||||||||||||
Rochester Electronics |
OTP ROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
IN-LINE |
70 Cel |
32KX8 |
32K |
0 Cel |
DUAL |
R-PDIP-T28 |
5.5 V |
Not Qualified |
262144 bit |
4.5 V |
45 ns |
||||||||||||||||||||||||||||||
Defense Logistics Agency |
OTP ROM |
MILITARY |
24 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
1024 words |
5 |
5 |
8 |
IN-LINE |
DIP24,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
3-STATE |
1KX8 |
1K |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T24 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
8192 bit |
4.5 V |
e0 |
.12 Amp |
31.877 mm |
45 ns |
|||||||||||||||||
Fairchild Semiconductor |
OTP ROM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
THROUGH-HOLE |
512 words |
8 |
IN-LINE |
DIP24,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
512X8 |
512 |
0 Cel |
TIN LEAD |
DUAL |
R-XDIP-T24 |
2A |
Not Qualified |
4096 bit |
e0 |
|||||||||||||||||||||||||||||||
Atmel |
OTP ROM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
25 mA |
131072 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T32 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.00001 Amp |
42.05 mm |
70 ns |
|||||||||||||||||
Atmel |
OTP ROM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
40 mA |
1048576 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
1MX8 |
1M |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T32 |
1 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
8388608 bit |
4.5 V |
e0 |
.0001 Amp |
42.05 mm |
100 ns |
||||||||||||||||
Atmel |
OTP ROM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
65536 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
e0 |
30 |
225 |
.0001 Amp |
37.0205 mm |
70 ns |
||||||||||||||
Atmel |
OTP ROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
65536 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
e0 |
.0001 Amp |
36.95 mm |
90 ns |
||||||||||||||||
Intel |
OTP ROM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T24 |
Not Qualified |
16384 bit |
e0 |
450 ns |
25 |
||||||||||||||||||||||||||
Cypress Semiconductor |
OTP ROM |
MILITARY |
24 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
SYNCHRONOUS |
120 mA |
512 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.3 |
EPROMs |
2.54 mm |
125 Cel |
3-STATE |
512X8 |
512 |
-55 Cel |
DUAL |
R-GDIP-T24 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
4096 bit |
4.5 V |
BUFFERED COMMON NOT_PRESET AND NOT_CLEAR INPUTS |
.12 Amp |
31.877 mm |
12 ns |
12.5 |
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Cypress Semiconductor |
OTP ROM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
100 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.3 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T24 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
e0 |
.03 Amp |
40 ns |
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National Semiconductor |
OTP ROM |
COMMERCIAL |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
BIPOLAR |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
110 mA |
32 words |
5 |
5 |
8 |
IN-LINE |
DIP16,.3 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
32X8 |
32 |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T16 |
5.25 V |
5.08 mm |
7.62 mm |
Not Qualified |
256 bit |
4.75 V |
e0 |
21.755 mm |
25 ns |
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Renesas Electronics |
OTP ROM |
MILITARY |
28 |
DIP |
RECTANGULAR |
300k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-PRF-38535 Class V |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
8 |
IN-LINE |
2.54 mm |
125 Cel |
8KX8 |
8K |
-55 Cel |
TIN LEAD |
DUAL |
R-CDIP-T28 |
5.5 V |
5.92 mm |
15.24 mm |
Not Qualified |
65536 bit |
4.5 V |
e0 |
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NXP Semiconductors |
OTP ROM |
MILITARY |
16 |
DIP |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
BIPOLAR |
MIL-M-38510 Class B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
512 words |
5 |
4 |
IN-LINE |
125 Cel |
512X4 |
512 |
-55 Cel |
DUAL |
R-XDIP-T16 |
5.5 V |
Not Qualified |
2048 bit |
4.5 V |
85 ns |
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Microchip Technology |
OTP ROM |
COMMERCIAL |
8 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
NMOS |
THROUGH-HOLE |
SERIAL |
SYNCHRONOUS |
12 mA |
128 words |
5 |
5 |
8 |
IN-LINE |
DIP8,.3 |
16 |
EEPROMs |
10 |
2.54 mm |
70 Cel |
3-STATE |
128X8 |
128 |
0 Cel |
TIN LEAD |
DUAL |
SOFTWARE |
R-PDIP-T8 |
5.5 V |
5.08 mm |
10000 Write/Erase Cycles |
7.62 mm |
Not Qualified |
1024 bit |
4.5 V |
AUTOMATIC WRITE |
e0 |
.003 Amp |
9.8425 mm |
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Texas Instruments |
OTP ROM |
COMMERCIAL |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
THROUGH-HOLE |
160 mA |
256 words |
5 |
5 |
4 |
IN-LINE |
DIP16,.3 |
OTP ROMs |
2.54 mm |
70 Cel |
256X4 |
256 |
0 Cel |
DUAL |
R-XDIP-T16 |
Not Qualified |
1024 bit |
NOT SPECIFIED |
NOT SPECIFIED |
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Texas Instruments |
OTP ROM |
COMMERCIAL |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
THROUGH-HOLE |
110 mA |
32 words |
5 |
5 |
8 |
IN-LINE |
DIP16,.3 |
OTP ROMs |
2.54 mm |
70 Cel |
32X8 |
32 |
0 Cel |
DUAL |
R-XDIP-T16 |
40 ns |
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Texas Instruments |
OTP ROM |
MILITARY |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
THROUGH-HOLE |
1024 words |
8 |
IN-LINE |
DIP24,.6 |
OTP ROMs |
2.54 mm |
125 Cel |
1KX8 |
1K |
-55 Cel |
DUAL |
R-XDIP-T24 |
Not Qualified |
8192 bit |
NOT SPECIFIED |
NOT SPECIFIED |
60 ns |
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Texas Instruments |
OTP ROM |
COMMERCIAL |
20 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
TTL |
THROUGH-HOLE |
512 words |
8 |
IN-LINE |
DIP20,.3 |
OTP ROMs |
2.54 mm |
70 Cel |
512X8 |
512 |
0 Cel |
DUAL |
R-PDIP-T20 |
Not Qualified |
4096 bit |
75 ns |
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Texas Instruments |
OTP ROM |
MILITARY |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
38535Q/M;38534H;883B |
THROUGH-HOLE |
1024 words |
8 |
IN-LINE |
DIP24,.6 |
OTP ROMs |
2.54 mm |
125 Cel |
1KX8 |
1K |
-55 Cel |
DUAL |
R-XDIP-T24 |
Not Qualified |
8192 bit |
NOT SPECIFIED |
NOT SPECIFIED |
70 ns |
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Texas Instruments |
OTP ROM |
MILITARY |
20 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
BIPOLAR |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
512 words |
5 |
5 |
8 |
IN-LINE |
DIP20,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
512X8 |
512 |
-55 Cel |
DUAL |
R-GDIP-T20 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
4096 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
24.195 mm |
110 ns |
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|
Texas Instruments |
OTP ROM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
-40 Cel |
DUAL |
R-PDIP-T28 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
36.32 mm |
100 ns |
13 |
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Texas Instruments |
OTP ROM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
250 mA |
65536 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
0 Cel |
DUAL |
R-PDIP-T32 |
5.25 V |
5.08 mm |
15.24 mm |
Not Qualified |
524288 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00003 Amp |
41.4 mm |
250 ns |
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Texas Instruments |
OTP ROM |
MILITARY |
20 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
38535Q/M;38534H;883B |
THROUGH-HOLE |
512 words |
8 |
IN-LINE |
DIP20,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
512X8 |
512 |
-55 Cel |
DUAL |
R-XDIP-T20 |
Not Qualified |
4096 bit |
85 ns |
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Texas Instruments |
OTP ROM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
COMMON |
3.3 |
3.3/5 |
8 |
IN-LINE |
DIP32,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
0 Cel |
DUAL |
R-PDIP-T32 |
3.6 V |
5.08 mm |
15.24 mm |
Not Qualified |
1048576 bit |
3 V |
.000025 Amp |
41.4 mm |
200 ns |
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Texas Instruments |
OTP ROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
16384 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
16KX8 |
16K |
0 Cel |
DUAL |
R-PDIP-T28 |
5.25 V |
5.08 mm |
15.24 mm |
Not Qualified |
131072 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
36.32 mm |
200 ns |
13 |
OTP ROM, or One-Time Programmable Read-Only Memory, is a type of non-volatile computer memory that is programmed once and cannot be reprogrammed. OTP ROM is used to store data that needs to be permanently stored and cannot be changed or updated in the future.
OTP ROM is created using a process similar to that used to manufacture Mask ROM. However, instead of programming the memory during the manufacturing process, OTP ROM is programmed after the manufacturing process, but before it is delivered to the customer. This allows the customer to program the memory with the data that they need to store permanently.
OTP ROM is commonly used in devices such as microcontrollers, smart cards, and other electronic devices that require permanent storage of data. It is ideal for storing critical data, such as system settings, encryption keys, and other sensitive information that needs to be permanently stored and cannot be changed or updated in the future.