DIP OTP ROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M27C4002-10XB6X	STMicroelectronics	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T40	5.25 V		15.24 mm	Not Qualified	4194304 bit	4.75 V		e3			.0001 Amp	52.18 mm	100 ns
M27C512-25XB1E	STMicroelectronics	OTP ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	MATTE TIN	DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.75 V		e3			.0001 Amp	36.83 mm	250 ns
M27C1001-15XB6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.25 V	4.83 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	42.035 mm	150 ns
M27C512-45XB6E	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.75 V		e3			.0001 Amp	36.83 mm	45 ns
M27C512-12B6E	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e3			.0001 Amp	36.83 mm	120 ns
M27C512-80B6X	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	37.085 mm	80 ns
M27C256B-80XB1X	STMicroelectronics	OTP ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-PDIP-T28	5.25 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3			.0001 Amp	37.085 mm	80 ns	12.75
M27C512-10XB3	STMicroelectronics	OTP ROM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.75 V		e3			.0001 Amp	36.83 mm	100 ns
M27C512-10B6E	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e3			.0001 Amp	36.83 mm	100 ns
M27C2001-90B1	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e3			.0001 Amp	41.91 mm	90 ns
M27C1001-10XB1L	STMicroelectronics		COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32				Not Qualified	1048576 bit			e0			.0001 Amp		100 ns
M27C512-10B6X	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	37.085 mm	100 ns
M27C256B-20B1X	STMicroelectronics	OTP ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	37.085 mm	150 ns	12.75
M27C4002-45B6X	STMicroelectronics	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T40	5.5 V		15.24 mm	Not Qualified	4194304 bit	4.5 V		e3			.0001 Amp	52.18 mm	45 ns
M27C2001-70B1TR	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		8	IN-LINE				2.54 mm	70 Cel		256KX8	256K	0 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T32	5.5 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e3				41.91 mm	70 ns
M27C256B-25XB3X	STMicroelectronics	OTP ROM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T28	5.25 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3			.0001 Amp	37.085 mm	150 ns	12.75
M27C512-45B3X	STMicroelectronics	OTP ROM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel		DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	37.085 mm	45 ns
M27C4001-12XB6X	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.25 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V		e3			.0001 Amp	41.91 mm	100 ns
M27C256B-80XB7	STMicroelectronics		INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28				Not Qualified	262144 bit			e0			.0001 Amp		80 ns	12.75
M27C1001-12B1X	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	41.91 mm	120 ns
M27C1001-15B6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	4.83 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	42.035 mm	150 ns
M27C4001-10XB1X	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.25 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V		e3			.0001 Amp	41.91 mm	100 ns
M27C1024-12XB6	STMicroelectronics	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T40	5.25 V		15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	52.18 mm	100 ns
M27C1024-90XB1	STMicroelectronics	OTP ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	MATTE TIN	DUAL	R-PDIP-T40	5.25 V		15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	52.18 mm	80 ns
M27C512-15B6E	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e3			.0001 Amp	36.83 mm	150 ns
M27C800-150B6	STMicroelectronics	OTP ROM	INDUSTRIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	COMMON	5	5	16	IN-LINE	DIP42,.6	8	OTP ROMs	2.54 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e3			.00005 Amp	52.455 mm	120 ns
M27C1001-90XB6X	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.25 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	41.91 mm	90 ns
M27C322-80B1	STMicroelectronics	OTP ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	2097152 words	COMMON	5	5	16	IN-LINE	DIP42,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	33554432 bit	4.5 V		e3			.0001 Amp	52.455 mm	80 ns
M27C256B-90B3X	STMicroelectronics	OTP ROM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	37.085 mm	90 ns	12.75
M27C1000-25B1	STMicroelectronics		COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE			30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T32				Not Qualified	1048576 bit			e0			.0001 Amp		250 ns
M27C1024-20XB7X	STMicroelectronics	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T40	5.25 V		15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	52.18 mm	100 ns
M27C4001-12XB6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.25 V	4.83 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V		e3			.0001 Amp	42.035 mm	100 ns
M27C1024-90XB7	STMicroelectronics	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T40	5.25 V		15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	52.18 mm	80 ns
M27C512-60XB3	STMicroelectronics	OTP ROM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.75 V		e0			.0001 Amp	36.83 mm	60 ns
M27C1001-60B1X	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.5 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	41.91 mm	60 ns
M27C256B-20B7X	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				2.54 mm	105 Cel		32KX8	32K	-40 Cel		DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V						37.085 mm	150 ns
M27C256B-15B6X	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	37.085 mm	150 ns	12.75
M27C512-60B6E	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e3			.0001 Amp	36.83 mm	60 ns
M27C256B-20B1	STMicroelectronics	OTP ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-PDIP-T28	5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	36.83 mm	150 ns	12.75
M27C400-70B6	STMicroelectronics	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE	DIP40,.6	8	OTP ROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T40	5.5 V		15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.0001 Amp	52.18 mm	70 ns
M27C160-50B1	STMicroelectronics	OTP ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE	DIP42,.6	8	OTP ROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	MATTE TIN	DUAL	R-PDIP-T42	5.5 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V		e3			.0001 Amp	52.455 mm	50 ns
M27C1001-20XB1	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.25 V	4.83 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	42.035 mm	200 ns
M27C1024-20XB6X	STMicroelectronics	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T40	5.25 V		15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	52.18 mm	100 ns
M27C4002-70XB6TR	STMicroelectronics	OTP ROM		40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words		5		16	IN-LINE	DIP40,.6			2.54 mm	85 Cel		256KX16	256K	-40 Cel		DUAL	R-PDIP-T40	5.5 V	4.45 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	SEATED HGT-NOM				.0001 Amp	52.18 mm	70 ns	5
M27C2001-80XB6X	STMicroelectronics	OTP ROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.25 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.75 V		e3			.0001 Amp	41.91 mm	80 ns
M27C1001-35XB1	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		OTP ROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-PDIP-T32	5.25 V	4.83 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	42.035 mm	35 ns
M27C202-100B6	STMicroelectronics	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	128KX16	128K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T40	5.5 V		15.24 mm	Not Qualified	2097152 bit	4.5 V		e3			.0001 Amp	52.18 mm	100 ns
M27C4002-20XB6X	STMicroelectronics	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE	DIP40,.6		OTP ROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	MATTE TIN	DUAL	R-PDIP-T40	5.25 V		15.24 mm	Not Qualified	4194304 bit	4.75 V		e3			.0001 Amp	52.18 mm	200 ns

OTP ROM

OTP ROM, or One-Time Programmable Read-Only Memory, is a type of non-volatile computer memory that is programmed once and cannot be reprogrammed. OTP ROM is used to store data that needs to be permanently stored and cannot be changed or updated in the future.

OTP ROM is created using a process similar to that used to manufacture Mask ROM. However, instead of programming the memory during the manufacturing process, OTP ROM is programmed after the manufacturing process, but before it is delivered to the customer. This allows the customer to program the memory with the data that they need to store permanently.

OTP ROM is commonly used in devices such as microcontrollers, smart cards, and other electronic devices that require permanent storage of data. It is ideal for storing critical data, such as system settings, encryption keys, and other sensitive information that needs to be permanently stored and cannot be changed or updated in the future.