RECTANGULAR OTP ROM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
BQ2022ADBZR	Texas Instruments	OTP ROM	OTHER	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS	.02 mA	1024 words	COMMON	2.7	3/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236	OTP ROMs	.95 mm	70 Cel	OPEN-DRAIN	1KX1	1K	-20 Cel	Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)	DUAL		R-PDSO-G3	1	5.5 V	1.12 mm	.01667 MHz	1.3 mm	Not Qualified	1024 bit	2.65 V	ORGANIZED AS 4 PAGES OF 32 BYTES EACH	e4	NOT SPECIFIED	260		2.92 mm
M27C256B-12C1	STMicroelectronics	OTP ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	QUAD		R-PQCC-J32		5.5 V	3.56 mm		11.43 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	13.97 mm	120 ns	12.75
BQ2022ADBZRG4	Texas Instruments	OTP ROM	OTHER	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS	.02 mA	1024 words	COMMON	2.7	3/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236	OTP ROMs	.95 mm	70 Cel	OPEN-DRAIN	1KX1	1K	-20 Cel	Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)	DUAL		R-PDSO-G3	1	5.5 V	1.12 mm	.01667 MHz	1.3 mm	Not Qualified	1024 bit	2.65 V	ORGANIZED AS 4 PAGES OF 32 BYTES EACH	e4	NOT SPECIFIED	260		2.92 mm
AM27S29APC	Rochester Electronics	OTP ROM	COMMERCIAL EXTENDED	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	BIPOLAR		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		512 words		5		8	IN-LINE			2.54 mm	75 Cel		512X8	512	0 Cel		DUAL		R-PDIP-T20		5.25 V	5.08 mm		7.62 mm		4096 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED		26.035 mm	35 ns
M27C512-90B1	STMicroelectronics	OTP ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	36.83 mm	90 ns
AT27C256R-45JC	Atmel	OTP ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	20 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	QUAD		R-PQCC-J32	2	5.5 V	3.55 mm		11.43 mm	Not Qualified	262144 bit	4.5 V		e0		225	.0001 Amp	13.97 mm	45 ns	13
27LV256-25/P	Microchip Technology	OTP ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	32768 words	COMMON	5	3.3/5	8	IN-LINE	DIP28,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	4.83 mm		15.24 mm	Not Qualified	262144 bit	3 V	DATA RETENTION >200 YEARS	e0			.0001 Amp	36.32 mm	250 ns	13
AT27LV256A-90JU-T	Microchip Technology	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	8 mA	32768 words	COMMON	3.3		8	CHIP CARRIER	LCC32,.45X.55		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	QUAD	1	R-PQCC-J32		3.6 V	3.556 mm		11.43 mm		262144 bit	3 V	ALSO OPERATES AT 5V NOMINAL SUPPLY VOLTAGE	e3			.00002 Amp	13.97 mm	90 ns	13
M27C512-45C1	STMicroelectronics	OTP ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	QUAD		R-PQCC-J32		5.5 V	3.56 mm		11.43 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	13.97 mm	45 ns
M27C512-90C6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	QUAD		R-PQCC-J32		5.5 V	3.56 mm		11.43 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	13.97 mm	90 ns
AT27C1024-70PC	Atmel	OTP ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL		R-PDIP-T40	1	5.5 V	5.59 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			.0001 Amp	52.2 mm	70 ns
AT27C1024-70PI	Atmel	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	TIN LEAD	DUAL		R-PDIP-T40	1	5.5 V	4.826 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0	30	225	.0001 Amp	52.324 mm	70 ns
DS2502S/T&R	Maxim Integrated	OTP ROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		128 words	COMMON	5	3/5	8	SMALL OUTLINE	SOP8,.25	Other Memory ICs	1.27 mm	85 Cel		128X8	128	-40 Cel	TIN LEAD	DUAL		R-PDSO-G8		6 V	1.75 mm		3.9 mm	Not Qualified	1024 bit	2.8 V	MICROLAN COMPATIBLE	e0				4.9 mm	15000 ns
DS2502S+T&R	Analog Devices	OTP ROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		128 words	COMMON	5	3/5	8	SMALL OUTLINE	SOP8,.25	Other Memory ICs	1.27 mm	85 Cel		128X8	128	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G8	1	6 V	1.75 mm		3.9 mm	Not Qualified	1024 bit	2.8 V	MICROLAN COMPATIBLE	e3	30	260		4.9 mm	15000 ns
AT27C1024-45PI	Atmel	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T40	1	5.5 V	4.826 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0	30	225	.0001 Amp	52.324 mm	45 ns
AT27C1024-70VI	Atmel	OTP ROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20	OTP ROMs	.5 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	TIN LEAD	DUAL		R-PDSO-G40	3	5.5 V	1.2 mm		10 mm	Not Qualified	1048576 bit	4.5 V		e0			.0001 Amp	12.4 mm	70 ns
AT27C4096-55PU	Microchip Technology	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	COMMON	5	5	16	IN-LINE	DIP40,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel		DUAL	1	R-PDIP-T40		5.5 V	4.826 mm		15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.0001 Amp	52.324 mm	55 ns	13
BQ2026DBZR	Texas Instruments	OTP ROM	OTHER	3	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS	.02 mA	1536 words	COMMON		3/5	1	SMALL OUTLINE	TO-236	OTP ROMs	.95 mm	70 Cel	OPEN-DRAIN	1.5KX1	1.5K	-20 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G3	1	5.5 V	1.12 mm	.01667 MHz	1.3 mm	Not Qualified	1536 bit	2.65 V		e4	NOT SPECIFIED	260		2.92 mm
M27C512-70C6TR	STMicroelectronics	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN	QUAD		R-PQCC-J32		5.5 V	3.56 mm		11.43 mm	Not Qualified	524288 bit	4.5 V		e3			.0001 Amp	13.97 mm	70 ns
AT27C256R-55PC	Atmel	OTP ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL		R-PDIP-T28	1	5.5 V	5.59 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e0			.0001 Amp	36.95 mm	55 ns	13
AT27C256R-12JC	Atmel	OTP ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	20 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	QUAD		R-PQCC-J32	2	5.5 V	3.55 mm		11.43 mm	Not Qualified	262144 bit	4.5 V		e0		225	.0001 Amp	13.97 mm	120 ns	13
AT27C256R-20JC	Atmel	OTP ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	20 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	QUAD		R-PQCC-J32	2	5.5 V	3.55 mm		11.43 mm	Not Qualified	262144 bit	4.5 V		e0		225	.0001 Amp	13.97 mm	200 ns	13
AT27C256R-70PC	Atmel	OTP ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL		R-PDIP-T28	1	5.5 V	5.59 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e0			.0001 Amp	36.95 mm	70 ns	13
M27C1001-35C6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	QUAD		R-PQCC-J32		5.5 V	3.56 mm		11.43 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	13.97 mm	35 ns
AT27C4096-12PC	Atmel	OTP ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	COMMON	5	5	16	IN-LINE	DIP40,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL		R-PDIP-T40	1	5.5 V	5.59 mm		15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.0001 Amp	52.2 mm	120 ns
AT27C4096-90PI	Atmel	OTP ROM	INDUSTRIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	COMMON	5	5	16	IN-LINE	DIP40,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	TIN LEAD	DUAL		R-PDIP-T40	1	5.5 V	4.826 mm		15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.0001 Amp	52.324 mm	90 ns
AT27LV256A-90JU	Microchip Technology	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	8 mA	32768 words	COMMON	3.3	3.3/5	8	CHIP CARRIER	LCC32,.45X.55	OTP ROMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	QUAD	1	R-PQCC-J32	3	3.6 V	3.556 mm		11.43 mm	Not Qualified	262144 bit	3 V	ALSO OPERATES AT 5V NOMINAL SUPPLY VOLTAGE	e3	40	245	.00002 Amp	13.97 mm	90 ns	13
M27C512-10C6TR	STMicroelectronics	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN	QUAD		R-PQCC-J32		5.5 V	3.56 mm		11.43 mm	Not Qualified	524288 bit	4.5 V		e3			.0001 Amp	13.97 mm	100 ns
5962-8765102LA	Defense Logistics Agency	OTP ROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	1024 words		5	5	8	IN-LINE	DIP24,.3	OTP ROMs	2.54 mm	125 Cel		1KX8	1K	-55 Cel	Tin/Lead (Sn/Pb) - hot dipped	DUAL		R-GDIP-T24		5.5 V				Qualified	8192 bit	4.5 V		e0			.12 Amp		45 ns
5962-8863603LA	Defense Logistics Agency	OTP ROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	SYNCHRONOUS		1024 words		5		8	IN-LINE				125 Cel		1KX8	1K	-55 Cel	TIN LEAD	DUAL		R-GDIP-T24		5.5 V				Qualified	8192 bit	4.5 V		e0					20 ns
AM27C512-70JI	Rochester Electronics	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		8	CHIP CARRIER			1.27 mm	85 Cel		64KX8	64K	-40 Cel		QUAD		R-PQCC-J32		5.5 V	3.55 mm		11.43 mm		524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		13.97 mm	70 ns
AT27C010-70PC	Atmel	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	DUAL		R-PDIP-T32	1	5.5 V	4.826 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			.00001 Amp	42.037 mm	70 ns
CY7C291A-35DMB	Cypress Semiconductor	OTP ROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.3	OTP ROMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	-55 Cel	TIN LEAD	DUAL		R-GDIP-T24	1	5.5 V	5.08 mm		7.62 mm	Not Qualified	16384 bit	4.5 V		e0			.04 Amp	31.877 mm	35 ns	12.5
DM74LS471N	National Semiconductor	OTP ROM	COMMERCIAL	20	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	BIPOLAR		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5	5	8	IN-LINE	DIP20,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	256X8	256	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20		5.25 V	5.08 mm		7.62 mm	Not Qualified	2048 bit	4.75 V		e0				26.075 mm	60 ns
M27C1001-10C1	STMicroelectronics	OTP ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	QUAD		R-PQCC-J32		5.5 V	3.56 mm		11.43 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	13.97 mm	100 ns
QP7C245A-15PC	Teledyne E2v (Uk)	OTP ROM		24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	BIPOLAR		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5		8	IN-LINE	DIP24,.3		2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel		DUAL		R-PDIP-T24		5.5 V	5.08 mm		7.62 mm		16384 bit	4.5 V						32.51 mm	15 ns	5
M27C1001-45XB1	STMicroelectronics	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL		R-PDIP-T32		5.25 V	4.83 mm		15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	42.035 mm	45 ns
M27C1001-70C1	STMicroelectronics	OTP ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	QUAD		R-PQCC-J32		5.5 V	3.56 mm		11.43 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	13.97 mm	70 ns
M27C1001-12C6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	QUAD		R-PQCC-J32		5.5 V	3.56 mm		11.43 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	13.97 mm	120 ns
M27C256B-70C6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	QUAD		R-PQCC-J32		5.5 V	3.56 mm		11.43 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	13.97 mm	70 ns	12.75
M27C256B-90C6	STMicroelectronics	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	QUAD		R-PQCC-J32		5.5 V	3.56 mm		11.43 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	13.97 mm	90 ns	12.75
M27C512-15B1	STMicroelectronics	OTP ROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL		R-PDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified	524288 bit	4.5 V					.0001 Amp	36.83 mm	150 ns
M27C512-15B6	STMicroelectronics	OTP ROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL		R-PDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	36.83 mm	150 ns
M27C512-15C1	STMicroelectronics	OTP ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		QUAD		R-PQCC-J32		5.5 V	3.56 mm		11.43 mm	Not Qualified	524288 bit	4.5 V					.0001 Amp	13.97 mm	150 ns
BQ2024DBZR	Texas Instruments	OTP ROM	OTHER	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS	.02 mA	1536 words	COMMON	2.7	3/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TO-236	OTP ROMs	.95 mm	70 Cel	OPEN-DRAIN	1.5KX1	1.5K	-20 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G3	1	5.5 V	1.12 mm	.01667 MHz	1.3 mm	Not Qualified	1536 bit	2.65 V	ORGANIZED AS 6 PAGES OF 32 BYTES EACH	e4	NOT SPECIFIED	260		2.92 mm
M27C1001-15C1	STMicroelectronics	OTP ROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	QUAD		R-PQCC-J32		5.5 V	3.56 mm		11.43 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	13.97 mm	150 ns
AT27C040-15PC	Atmel	OTP ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE	DIP32,.6	OTP ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL		R-PDIP-T32	1	5.5 V	5.59 mm		15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.0001 Amp	42.05 mm	150 ns
AT27C040-70JI	Atmel	OTP ROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	TIN LEAD	QUAD		R-PQCC-J32	2	5.5 V	3.556 mm		11.43 mm	Not Qualified	4194304 bit	4.5 V		e0		225	.0001 Amp	13.97 mm	70 ns

OTP ROM

OTP ROM, or One-Time Programmable Read-Only Memory, is a type of non-volatile computer memory that is programmed once and cannot be reprogrammed. OTP ROM is used to store data that needs to be permanently stored and cannot be changed or updated in the future.

OTP ROM is created using a process similar to that used to manufacture Mask ROM. However, instead of programming the memory during the manufacturing process, OTP ROM is programmed after the manufacturing process, but before it is delivered to the customer. This allows the customer to program the memory with the data that they need to store permanently.

OTP ROM is commonly used in devices such as microcontrollers, smart cards, and other electronic devices that require permanent storage of data. It is ideal for storing critical data, such as system settings, encryption keys, and other sensitive information that needs to be permanently stored and cannot be changed or updated in the future.