Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Length | Maximum Access Time | Programming Voltage (V) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Atmel |
OTP ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
40 mA |
262144 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T40 |
1 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.0001 Amp |
52.2 mm |
90 ns |
||||||||||||||||
|
Atmel |
OTP ROM |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
20 mA |
65536 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G28 |
2 |
5.5 V |
2.79 mm |
8.69 mm |
Not Qualified |
524288 bit |
4.5 V |
e3 |
250 |
.0001 Amp |
18.25 mm |
70 ns |
||||||||||||||
Microchip Technology |
OTP ROM |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
10 mA |
524288 words |
COMMON |
3.3 |
8 |
CHIP CARRIER |
LCC32,.45X.55 |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
-40 Cel |
QUAD |
1 |
R-PQCC-J32 |
3.6 V |
3.556 mm |
11.43 mm |
4194304 bit |
3 V |
ALSO OPERATES AT 5V SUPPLY |
.00002 Amp |
13.97 mm |
90 ns |
13 |
|||||||||||||||||||
Rochester Electronics |
OTP ROM |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
CHIP CARRIER |
70 Cel |
32KX8 |
32K |
0 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
5.5 V |
Not Qualified |
262144 bit |
4.5 V |
e0 |
150 ns |
||||||||||||||||||||||||||||
|
STMicroelectronics |
OTP ROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
MATTE TIN |
DUAL |
R-PDIP-T28 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
.0001 Amp |
36.83 mm |
90 ns |
12.75 |
|||||||||||||||
|
STMicroelectronics |
OTP ROM |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
30 mA |
524288 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC32,.5X.6 |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
5.5 V |
3.56 mm |
11.43 mm |
Not Qualified |
4194304 bit |
4.5 V |
e3 |
.0001 Amp |
13.97 mm |
100 ns |
||||||||||||||||
|
STMicroelectronics |
OTP ROM |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
30 mA |
524288 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC32,.5X.6 |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
5.5 V |
3.56 mm |
11.43 mm |
Not Qualified |
4194304 bit |
4.5 V |
e3 |
.0001 Amp |
13.97 mm |
100 ns |
||||||||||||||||
|
STMicroelectronics |
OTP ROM |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC32,.5X.6 |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
0 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
5.5 V |
3.56 mm |
11.43 mm |
Not Qualified |
524288 bit |
4.5 V |
e0 |
.0001 Amp |
13.97 mm |
120 ns |
||||||||||||||||
|
STMicroelectronics |
OTP ROM |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC32,.5X.6 |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
5.5 V |
3.56 mm |
11.43 mm |
Not Qualified |
524288 bit |
4.5 V |
e0 |
.0001 Amp |
13.97 mm |
120 ns |
||||||||||||||||
|
STMicroelectronics |
OTP ROM |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
15 mA |
131072 words |
COMMON |
3 |
3/3.3 |
8 |
CHIP CARRIER |
LDCC32,.5X.6 |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3.6 V |
3.56 mm |
11.43 mm |
Not Qualified |
1048576 bit |
2.7 V |
e3 |
.000015 Amp |
13.97 mm |
80 ns |
||||||||||||||||
|
STMicroelectronics |
OTP ROM |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
15 mA |
131072 words |
COMMON |
3 |
3/3.3 |
8 |
CHIP CARRIER |
LDCC32,.5X.6 |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3.6 V |
3.56 mm |
11.43 mm |
Not Qualified |
1048576 bit |
2.7 V |
e3 |
.000015 Amp |
13.97 mm |
80 ns |
||||||||||||||||
STMicroelectronics |
OTP ROM |
COMMERCIAL |
32 |
WQCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER, WINDOW |
LDCC32,.5X.6 |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
5.5 V |
3.56 mm |
11.455 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
.0002 Amp |
13.995 mm |
35 ns |
12.75 |
||||||||||||||||
Advanced Micro Devices |
MEMORY CIRCUIT |
MILITARY |
20 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
MIL-STD-883 Class B (Modified) |
THROUGH-HOLE |
512 words |
5 |
5 |
8 |
IN-LINE |
DIP20,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
512X8 |
512 |
-55 Cel |
DUAL |
R-XDIP-T20 |
Not Qualified |
4096 bit |
70 ns |
||||||||||||||||||||||||||||||
Advanced Micro Devices |
MEMORY CIRCUIT |
MILITARY |
20 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
MIL-STD-883 Class B (Modified) |
THROUGH-HOLE |
512 words |
5 |
5 |
8 |
IN-LINE |
DIP20,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
512X8 |
512 |
-55 Cel |
DUAL |
R-XDIP-T20 |
Not Qualified |
4096 bit |
70 ns |
||||||||||||||||||||||||||||||
Rochester Electronics |
OTP ROM |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
70 Cel |
32KX8 |
32K |
0 Cel |
QUAD |
R-PQCC-J32 |
5.5 V |
3.55 mm |
11.43 mm |
262144 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
13.97 mm |
120 ns |
|||||||||||||||||||||||||
Advanced Micro Devices |
OTP ROM |
COMMERCIAL EXTENDED |
20 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
BIPOLAR |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
160 mA |
512 words |
5 |
5 |
8 |
IN-LINE |
DIP20,.3 |
OTP ROMs |
2.54 mm |
75 Cel |
3-STATE |
512X8 |
512 |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T20 |
5.25 V |
5.08 mm |
7.62 mm |
Not Qualified |
4096 bit |
4.75 V |
e0 |
26.035 mm |
35 ns |
|||||||||||||||||||
|
Atmel |
OTP ROM |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
35 mA |
131072 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDIP-T32 |
1 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
245 |
.00001 Amp |
42.037 mm |
45 ns |
||||||||||||||
|
Microchip Technology |
OTP ROM |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
40 mA |
1048576 words |
COMMON |
5 |
8 |
CHIP CARRIER |
LCC32,.45X.55 |
1.27 mm |
85 Cel |
3-STATE |
1MX8 |
1M |
-40 Cel |
MATTE TIN |
QUAD |
1 |
R-PQCC-J32 |
3 |
5.5 V |
3.556 mm |
11.43 mm |
8388608 bit |
4.5 V |
e3 |
40 |
245 |
.0001 Amp |
13.97 mm |
90 ns |
13 |
||||||||||||||
Atmel |
OTP ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T40 |
1 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.0001 Amp |
52.2 mm |
150 ns |
||||||||||||||||
Atmel |
OTP ROM |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
20 mA |
32768 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC32,.5X.6 |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
R-PQCC-J32 |
2 |
5.5 V |
3.55 mm |
11.43 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
30 |
225 |
.0001 Amp |
13.97 mm |
70 ns |
13 |
|||||||||||||
Atmel |
OTP ROM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
30 |
225 |
.0001 Amp |
37.0205 mm |
70 ns |
13 |
|||||||||||||
Atmel |
OTP ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
40 mA |
262144 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T40 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.0001 Amp |
52.2 mm |
100 ns |
|||||||||||||||||
Atmel |
OTP ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
40 mA |
262144 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T40 |
1 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.0001 Amp |
52.2 mm |
150 ns |
||||||||||||||||
Atmel |
OTP ROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
40 mA |
262144 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T40 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.0001 Amp |
52.2 mm |
85 ns |
|||||||||||||||||
|
Microchip Technology |
OTP ROM |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
8 mA |
65536 words |
COMMON |
3.3 |
3.3/5 |
8 |
CHIP CARRIER |
LCC32,.45X.55 |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
-40 Cel |
MATTE TIN |
QUAD |
1 |
R-PQCC-J32 |
3 |
3.6 V |
3.556 mm |
11.43 mm |
Not Qualified |
524288 bit |
3 V |
ALSO OPERATES AT 5V SUPPLY |
e3 |
40 |
245 |
.00002 Amp |
13.97 mm |
90 ns |
13 |
||||||||||
Rochester Electronics |
OTP ROM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
SMALL OUTLINE |
70 Cel |
32KX8 |
32K |
0 Cel |
DUAL |
R-PDSO-G28 |
5.5 V |
Not Qualified |
262144 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
45 ns |
||||||||||||||||||||||||||||
Rochester Electronics |
OTP ROM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
SMALL OUTLINE |
70 Cel |
32KX8 |
32K |
0 Cel |
DUAL |
R-PDSO-G28 |
5.5 V |
Not Qualified |
262144 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
70 ns |
||||||||||||||||||||||||||||
Cypress Semiconductor |
OTP ROM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
100 mA |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.3 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T24 |
5.5 V |
Not Qualified |
32768 bit |
4.5 V |
e0 |
25 ns |
|||||||||||||||||||||
Maxim Integrated |
OTP ROM |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
MOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
128 words |
COMMON |
5 |
3/5 |
8 |
SMALL OUTLINE |
SOP8,.25 |
Other Memory ICs |
1.27 mm |
85 Cel |
128X8 |
128 |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G8 |
1 |
6 V |
1.75 mm |
3.9 mm |
Not Qualified |
1024 bit |
2.8 V |
MICROLAN COMPATIBLE |
e0 |
4.9 mm |
|||||||||||||||||||
Intersil |
OTP ROM |
MILITARY |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
TTL |
MIL-STD-883 Class B (Modified) |
THROUGH-HOLE |
512 words |
5 |
5 |
4 |
IN-LINE |
DIP16,.3 |
OTP ROMs |
2.54 mm |
125 Cel |
512X4 |
512 |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T16 |
Not Qualified |
2048 bit |
e0 |
70 ns |
||||||||||||||||||||||||||||
|
STMicroelectronics |
OTP ROM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
0 Cel |
MATTE TIN |
DUAL |
R-PDIP-T32 |
5.5 V |
4.83 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
.0001 Amp |
42.035 mm |
100 ns |
||||||||||||||||
|
STMicroelectronics |
OTP ROM |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
30 mA |
131072 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC32,.5X.6 |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
0 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
5.25 V |
3.56 mm |
11.43 mm |
Not Qualified |
1048576 bit |
4.75 V |
e3 |
.0001 Amp |
13.97 mm |
45 ns |
||||||||||||||||
|
STMicroelectronics |
OTP ROM |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
30 mA |
32768 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC32,.5X.6 |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
5.25 V |
3.56 mm |
11.43 mm |
Not Qualified |
262144 bit |
4.75 V |
e3 |
.0002 Amp |
13.97 mm |
120 ns |
12.75 |
|||||||||||||||
|
STMicroelectronics |
OTP ROM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
524288 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
MATTE TIN |
DUAL |
R-PDIP-T32 |
5.5 V |
4.83 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
e3 |
.0001 Amp |
42.035 mm |
100 ns |
||||||||||||||||
Atmel |
OTP ROM |
INDUSTRIAL |
40 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP40,.56,20 |
OTP ROMs |
.5 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G40 |
3 |
5.5 V |
1.2 mm |
10 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.0001 Amp |
12.4 mm |
45 ns |
||||||||||||||||
Atmel |
OTP ROM |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
20 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
.0001 Amp |
37.0205 mm |
45 ns |
13 |
|||||||||||||||
Atmel |
OTP ROM |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
20 mA |
65536 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC32,.5X.6 |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
0 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
2 |
5.5 V |
3.55 mm |
11.43 mm |
Not Qualified |
524288 bit |
4.5 V |
e0 |
225 |
.0001 Amp |
13.97 mm |
45 ns |
|||||||||||||||
Atmel |
OTP ROM |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
20 mA |
65536 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC32,.5X.6 |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
2 |
5.5 V |
3.556 mm |
11.43 mm |
Not Qualified |
524288 bit |
4.5 V |
e0 |
225 |
.0001 Amp |
13.97 mm |
45 ns |
|||||||||||||||
Microchip Technology |
OTP ROM |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
8 mA |
65536 words |
COMMON |
3.3 |
8 |
CHIP CARRIER |
LCC32,.45X.55 |
1.27 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
-40 Cel |
QUAD |
1 |
R-PQCC-J32 |
3.6 V |
3.556 mm |
11.43 mm |
524288 bit |
3 V |
ALSO OPERATES AT 5V SUPPLY |
.00002 Amp |
13.97 mm |
90 ns |
13 |
|||||||||||||||||||
|
Microchip Technology |
OTP ROM |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
8 mA |
32768 words |
COMMON |
3 |
3/5 |
8 |
CHIP CARRIER |
LCC32,.45X.55 |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
-40 Cel |
MATTE TIN |
QUAD |
1 |
R-PQCC-J32 |
3 |
3.6 V |
3.556 mm |
11.43 mm |
Not Qualified |
262144 bit |
2.7 V |
ALSO OPERATES AT 5V SUPPLY |
e3 |
40 |
245 |
.00002 Amp |
13.97 mm |
70 ns |
13 |
||||||||||
Microchip Technology |
OTP ROM |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
8 mA |
32768 words |
COMMON |
3 |
8 |
CHIP CARRIER |
LCC32,.45X.55 |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
-40 Cel |
QUAD |
1 |
R-PQCC-J32 |
3.6 V |
3.556 mm |
11.43 mm |
262144 bit |
2.7 V |
ALSO OPERATES AT 5V SUPPLY |
.00002 Amp |
13.97 mm |
70 ns |
13 |
|||||||||||||||||||
|
STMicroelectronics |
OTP ROM |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
35 mA |
1048576 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER |
LDCC32,.5X.6 |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
1MX8 |
1M |
0 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
5.5 V |
3.56 mm |
11.43 mm |
Not Qualified |
8388608 bit |
4.5 V |
e3 |
.0001 Amp |
13.97 mm |
100 ns |
||||||||||||||||
Atmel |
OTP ROM |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
30 mA |
524288 words |
COMMON |
3.3 |
3.3/5 |
8 |
CHIP CARRIER |
LDCC32,.5X.6 |
OTP ROMs |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
2 |
3.6 V |
3.556 mm |
11.43 mm |
Not Qualified |
4194304 bit |
3 V |
ALSO OPERATES AT 5V SUPPLY |
e0 |
225 |
.00002 Amp |
13.97 mm |
90 ns |
||||||||||||||
NXP Semiconductors |
OTP ROM |
MILITARY |
16 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
BIPOLAR |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
32 words |
5 |
8 |
IN-LINE |
2.54 mm |
125 Cel |
3-STATE |
32X8 |
32 |
-55 Cel |
DUAL |
R-GDIP-T16 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
256 bit |
4.5 V |
19.535 mm |
50 ns |
|||||||||||||||||||||||||
Qp Semiconductor |
OTP ROM |
MILITARY |
16 |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
BIPOLAR |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
32 words |
5 |
8 |
IN-LINE |
125 Cel |
32X8 |
32 |
-55 Cel |
DUAL |
R-CDIP-T16 |
5.5 V |
Not Qualified |
256 bit |
4.5 V |
50 ns |
|||||||||||||||||||||||||||||||
Atmel |
OTP ROM |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
524288 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T32 |
1 |
5.5 V |
4.826 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.0001 Amp |
42.037 mm |
90 ns |
||||||||||||||||
|
Atmel |
OTP ROM |
INDUSTRIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
20 mA |
65536 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
OTP ROMs |
.55 mm |
85 Cel |
3-STATE |
64KX8 |
64K |
-40 Cel |
DUAL |
R-PDSO-G28 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
524288 bit |
4.5 V |
.0001 Amp |
11.8 mm |
70 ns |
||||||||||||||||||
Atmel |
OTP ROM |
INDUSTRIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
35 mA |
131072 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
OTP ROMs |
2.54 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T32 |
1 |
5.5 V |
5.59 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.00001 Amp |
42.05 mm |
150 ns |
OTP ROM, or One-Time Programmable Read-Only Memory, is a type of non-volatile computer memory that is programmed once and cannot be reprogrammed. OTP ROM is used to store data that needs to be permanently stored and cannot be changed or updated in the future.
OTP ROM is created using a process similar to that used to manufacture Mask ROM. However, instead of programming the memory during the manufacturing process, OTP ROM is programmed after the manufacturing process, but before it is delivered to the customer. This allows the customer to program the memory with the data that they need to store permanently.
OTP ROM is commonly used in devices such as microcontrollers, smart cards, and other electronic devices that require permanent storage of data. It is ideal for storing critical data, such as system settings, encryption keys, and other sensitive information that needs to be permanently stored and cannot be changed or updated in the future.