AUTOMOTIVE OTP ROM 1,167

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M27C256B-25XN3X	STMicroelectronics	OTP ROM	AUTOMOTIVE	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	OTP ROMs	.55 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-PDSO-G28	5.25 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.75 V	e0			.0001 Amp	11.8 mm	150 ns	12.75
M27C512-10XN3	STMicroelectronics	OTP ROM	AUTOMOTIVE	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	OTP ROMs	.55 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-PDSO-G28	5.5 V	1.25 mm	8 mm	Not Qualified	524288 bit	4.75 V	e0			.0001 Amp	11.8 mm	100 ns
M27C512-60XN3E	STMicroelectronics	OTP ROM	AUTOMOTIVE	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	OTP ROMs	.55 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel	TIN/TIN BISMUTH	DUAL	R-PDSO-G28	5.5 V	1.25 mm	8 mm	Not Qualified	524288 bit	4.75 V	e3/e6	NOT SPECIFIED	260	.0001 Amp	11.8 mm	60 ns
27C512A15N	NXP Semiconductors	OTP ROM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE				125 Cel		64KX8	64K	-40 Cel		DUAL	R-PDIP-T28	5.5 V				524288 bit	4.5 V						150 ns
27C512A20D	NXP Semiconductors	OTP ROM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		8	SMALL OUTLINE				125 Cel		64KX8	64K	-40 Cel		DUAL	R-PDSO-G28	5.5 V				524288 bit	4.5 V						200 ns
27C512A15FA	NXP Semiconductors	OTP ROM	AUTOMOTIVE	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE				125 Cel		64KX8	64K	-40 Cel		DUAL	R-CDIP-T28	5.5 V				524288 bit	4.5 V						150 ns
27C512A12D	NXP Semiconductors	OTP ROM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		8	SMALL OUTLINE				125 Cel		64KX8	64K	-40 Cel		DUAL	R-PDSO-G28	5.5 V				524288 bit	4.5 V						120 ns
27C512A20FA	NXP Semiconductors	OTP ROM	AUTOMOTIVE	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE				125 Cel		64KX8	64K	-40 Cel		DUAL	R-CDIP-T28	5.5 V				524288 bit	4.5 V						200 ns
27C512A12FA	NXP Semiconductors	OTP ROM	AUTOMOTIVE	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE				125 Cel		64KX8	64K	-40 Cel		DUAL	R-CDIP-T28	5.5 V				524288 bit	4.5 V						120 ns
27C512A12A	NXP Semiconductors	OTP ROM	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		8	CHIP CARRIER				125 Cel		64KX8	64K	-40 Cel		QUAD	R-PQCC-J32	5.5 V				524288 bit	4.5 V						120 ns
27C512A20N	NXP Semiconductors	OTP ROM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE				125 Cel		64KX8	64K	-40 Cel		DUAL	R-PDIP-T28	5.5 V				524288 bit	4.5 V						200 ns
27C512A12N	NXP Semiconductors	OTP ROM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE				125 Cel		64KX8	64K	-40 Cel		DUAL	R-PDIP-T28	5.5 V				524288 bit	4.5 V						120 ns
27C512A15A	NXP Semiconductors	OTP ROM	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		8	CHIP CARRIER				125 Cel		64KX8	64K	-40 Cel		QUAD	R-PQCC-J32	5.5 V				524288 bit	4.5 V						150 ns
27C512A15D	NXP Semiconductors	OTP ROM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		5		8	SMALL OUTLINE				125 Cel		64KX8	64K	-40 Cel		DUAL	R-PDSO-G28	5.5 V				524288 bit	4.5 V						150 ns
27C512A20A	NXP Semiconductors	OTP ROM	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		8	CHIP CARRIER				125 Cel		64KX8	64K	-40 Cel		QUAD	R-PQCC-J32	5.5 V				524288 bit	4.5 V						200 ns

OTP ROM

OTP ROM, or One-Time Programmable Read-Only Memory, is a type of non-volatile computer memory that is programmed once and cannot be reprogrammed. OTP ROM is used to store data that needs to be permanently stored and cannot be changed or updated in the future.

OTP ROM is created using a process similar to that used to manufacture Mask ROM. However, instead of programming the memory during the manufacturing process, OTP ROM is programmed after the manufacturing process, but before it is delivered to the customer. This allows the customer to program the memory with the data that they need to store permanently.

OTP ROM is commonly used in devices such as microcontrollers, smart cards, and other electronic devices that require permanent storage of data. It is ideal for storing critical data, such as system settings, encryption keys, and other sensitive information that needs to be permanently stored and cannot be changed or updated in the future.