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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
TC55VZM208ATGI12	Toshiba	CACHE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V					18.41 mm	12 ns
TC55V16366FF-167	Toshiba	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	440 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	512KX36	512K		0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.465 V	1.7 mm	167 MHz	14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0		.01 Amp	20 mm	3.6 ns
TC55417P-25H	Toshiba	CACHE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	4	IN-LINE	DIP24,.3		SRAMs	2.54 mm	70 Cel	3-STATE	16KX4	16K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T24	5.5 V	4.45 mm		7.62 mm	Not Qualified	65536 bit	4.5 V		e0	YES	.001 Amp	29.8 mm	25 ns
TC55464J-35	Toshiba	CACHE SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ24,.34		SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24	5.5 V	3.7 mm		7.7 mm	Not Qualified	262144 bit	4.5 V		e0	NO	.001 Amp	15.88 mm	35 ns
TC551632J-25	Toshiba	CACHE SRAM	COMMERCIAL	40	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	32768 words	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		SRAMs	1.27 mm	70 Cel	3-STATE	32KX16	32K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J40	5.5 V	3.7 mm		10.16 mm	Not Qualified	524288 bit	4.5 V		e0		.001 Amp	26.04 mm	25 ns
TC55V4400FT-12	Toshiba	CACHE SRAM	COMMERCIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	380 mA	4194304 words	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	4MX4	4M	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V		e0		.004 Amp	22.22 mm	12 ns
TC558128BJ-15	Toshiba	CACHE SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32	5.5 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0		.001 Amp	20.96 mm	15 ns
TC55V1165FF-10	Toshiba	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		16	FLATPACK, LOW PROFILE				.65 mm	70 Cel	3-STATE	64KX16	64K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3.6 V	1.7 mm		14 mm	Not Qualified	1048576 bit	3.1 V		e0	YES		20 mm	10 ns
TC55465AJ-20	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J28	5.5 V	3.7 mm		7.7 mm	Not Qualified	262144 bit	4.5 V		e0		.001 Amp	18.42 mm	20 ns
TC55465P-35	Toshiba	CACHE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP28,.3		SRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28	5.5 V	4.45 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0	YES	.001 Amp	34.9 mm	35 ns
TC5588J-35	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	115 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J28	5.5 V	3.7 mm		7.7 mm	Not Qualified	65536 bit	4.5 V		e0		.001 Amp	18.42 mm	35 ns
TC55V4376FFI-83	Toshiba	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	300 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	128KX36	128K	3.1 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.6 V	1.7 mm	83 MHz	14 mm	Not Qualified	4718592 bit	3.1 V	FLOW-THROUGH ARCHITECTURE	e0		.003 Amp	20 mm	9 ns
TC55VZM208AJGN10	Toshiba	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44		SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel		DUAL		R-PDSO-J36	3.6 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	3 V				.004 Amp	23.5 mm	10 ns
TC55328AJ-15	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE				1.27 mm	70 Cel		32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28	5.5 V	3.7 mm		7.7 mm	Not Qualified	262144 bit	4.5 V		e0			18.42 mm	15 ns
TC55464AP-15	Toshiba	CACHE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		4	IN-LINE				2.54 mm	70 Cel		64KX4	64K		0 Cel	TIN LEAD	DUAL		R-PDIP-T24	5.5 V	4.45 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0			29.8 mm	15 ns
TC55V16256JI-12	Toshiba	CACHE SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	210 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J44	3.6 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0		.01 Amp	28.58 mm	12 ns
TC55V4366FFI-150	Toshiba	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	365 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	128KX36	128K	3.1 V	-40 Cel	TIN LEAD	QUAD		R-PQFP-G100	3.6 V	1.7 mm	150 MHz	14 mm	Not Qualified	4718592 bit	3.1 V	PIPELINED ARCHITECTURE	e0		.003 Amp	20 mm	4.4 ns
TC5588P-25	Toshiba	CACHE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	115 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28	5.5 V	4.45 mm		7.62 mm	Not Qualified	65536 bit	4.5 V		e0		.001 Amp	34.9 mm	25 ns
TC55328AJ-35	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE				1.27 mm	70 Cel		32KX8	32K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28	5.5 V	3.7 mm		7.7 mm	Not Qualified	262144 bit	4.5 V		e0			18.42 mm	35 ns
TC55V8128BJI-12	Toshiba	CACHE SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32	3.6 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e0		.002 Amp	20.96 mm	12 ns
TC558128BFT-12	Toshiba	CACHE SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	190 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e0		.001 Amp	13.34 mm	12 ns
TC55V16100FT-10	Toshiba	CACHE SRAM	COMMERCIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	450 mA	1048576 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54	3.465 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3.135 V		e0		.004 Amp	22.22 mm	10 ns
TC55V2377AFF-205	Toshiba	CACHE SRAM	OTHER	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		36	FLATPACK, LOW PROFILE				.65 mm	85 Cel		64KX36	64K		0 Cel		QUAD		R-PQFP-G100	3.5 V	1.7 mm		14 mm	Not Qualified	2359296 bit	3.1 V					20 mm	4.9 ns
TC551632J-35	Toshiba	CACHE SRAM	COMMERCIAL	40	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	32768 words	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		SRAMs	1.27 mm	70 Cel	3-STATE	32KX16	32K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J40	5.5 V	3.7 mm		10.16 mm	Not Qualified	524288 bit	4.5 V		e0		.001 Amp	26.04 mm	35 ns
TC5589J-20	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		9	SMALL OUTLINE				1.27 mm	70 Cel		8KX9	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J28	5.5 V	3.7 mm		7.7 mm	Not Qualified	73728 bit	4.5 V		e0			18.42 mm	20 ns
TC55V4336FF-83	Toshiba	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	220 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	128KX32	128K	3.1 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3.6 V	1.7 mm	83 MHz	14 mm	Not Qualified	4194304 bit	3.1 V	FLOW-THROUGH ARCHITECTURE	e0		.002 Amp	20 mm	9 ns
TC551402J-30	Toshiba	CACHE SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	ASYNCHRONOUS		4194304 words		5		1	SMALL OUTLINE				1.27 mm	70 Cel		4MX1	4M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J32	5.5 V	3.6 mm		10.2 mm	Not Qualified	4194304 bit	4.5 V		e0			21 mm	30 ns
TC55VZM208AFTI10	Toshiba	CACHE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0		.01 Amp	18.41 mm	10 ns
TC554101J-20	Toshiba	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	1048576 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ36,.44		SRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J36	5.5 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0		.01 Amp	23.5 mm	20 ns
TC55V16186FFI-150	Toshiba	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	405 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	1MX18	1M	3.14 V	-40 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.465 V	1.7 mm	150 MHz	14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0		.01 Amp	20 mm	3.8 ns
TC559128AJ-20	Toshiba	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		9	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	128KX9	128K		0 Cel		DUAL	1	R-PDSO-J36	5.5 V	3.7 mm		10.16 mm	Not Qualified	1179648 bit	4.5 V			YES		23.5 mm	20 ns
TC55V1864FT-10	Toshiba	CACHE SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	260 mA	65536 words	COMMON	3.3	3.3	18	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	64KX18	64K	3 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	1179648 bit	3 V		e0		.001 Amp	18.41 mm	10 ns
TC55B329P-10	Toshiba	CACHE SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	170 mA	32768 words	COMMON	5	5	9	IN-LINE	DIP32,.3		SRAMs	2.54 mm	70 Cel	3-STATE	32KX9	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	4.45 mm		7.62 mm	Not Qualified	294912 bit	4.5 V		e0			40 mm	10 ns
TC55B88J-10	Toshiba	CACHE SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	155 mA	8192 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	TIN LEAD	DUAL		R-PDSO-J28	5.25 V	3.7 mm		7.7 mm	Not Qualified	65536 bit	4.75 V		e0			18.42 mm	10 ns
TC55V4186FF-167	Toshiba	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	256KX18	256K	3.1 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.6 V	1.7 mm	167 MHz	14 mm	Not Qualified	4718592 bit	3.1 V		e0		.002 Amp	20 mm	4 ns
TC5588P-15	Toshiba	CACHE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	135 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T28	5.5 V	4.45 mm		7.62 mm	Not Qualified	65536 bit	4.5 V		e0		.001 Amp	34.9 mm	15 ns
TC55B464P-12	Toshiba	CACHE SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	65536 words	COMMON	5	5	4	IN-LINE	DIP24,.3		SRAMs	2.54 mm	70 Cel	3-STATE	64KX4	64K		0 Cel	TIN LEAD	DUAL		R-PDIP-T24	5.5 V	4.45 mm		7.62 mm	Not Qualified	262144 bit	4.5 V		e0			29.8 mm	12 ns
TC55VZM208AFTI12	Toshiba	CACHE SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0		.01 Amp	18.41 mm	12 ns
TC55V1664J-15	Toshiba	CACHE SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	170 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ44,.44	16	SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel		DUAL	1	R-PDSO-J44	3.6 V	3.7 mm		10.16 mm	Not Qualified	1048576 bit	3 V			YES	.002 Amp	28.58 mm	15 ns
TC55V16100FTI-15	Toshiba	CACHE SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		1MX16	1M		-40 Cel		DUAL		R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V					22.22 mm	15 ns
TC55V16186FF-133	Toshiba	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	380 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	1MX18	1M	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.465 V	1.7 mm	133 MHz	14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0		.01 Amp	20 mm	4.2 ns
TC55V4316FF-167	Toshiba	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	370 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	128KX32	128K	3.1 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		R-PQFP-G100	3.6 V	1.7 mm	167 MHz	14 mm	Not Qualified	4194304 bit	3.1 V	PIPELINED ARCHITECTURE	e0		.003 Amp	20 mm	4 ns
TC55188T-20	Toshiba	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	230 mA	8192 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	8KX18	8K	4.5 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.5 V	4.57 mm		19.1262 mm	Not Qualified	147456 bit	4.5 V	CONFIGURABLE AS 2-WAY 4K*18	e0	YES	.04 Amp	19.1262 mm	20 ns
TC55V16100FT-12(M2	Toshiba	CACHE SRAM	COMMERCIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	420 mA	1048576 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	3 V	0 Cel		DUAL		R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V				.004 Amp	22.22 mm	12 ns
TC55WK818FF-267	Toshiba	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		2.5		18	FLATPACK, LOW PROFILE				.65 mm	70 Cel		512KX18	512K		0 Cel		QUAD		R-PQFP-G100	2.625 V	1.7 mm		14 mm	Not Qualified	9437184 bit	2.375 V	LATE WRITE				20 mm
TC55V8128BFTI-10	Toshiba	CACHE SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	210 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	128KX8	128K	3 V	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e0		.002 Amp	13.34 mm	10 ns
TC55VZM208AJJN10	Toshiba	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ36,.44		SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J36	3.6 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e0		.004 Amp	23.5 mm	10 ns
TC55329J-17	Toshiba	CACHE SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	140 mA	32768 words	COMMON	5	5	9	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32	5.25 V	3.7 mm		7.7 mm	Not Qualified	294912 bit	4.75 V		e0	YES	.001 Amp	20.96 mm	17 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.