CACHE SRAM SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
6178S12DB	Renesas Electronics	CACHE SRAM
6178S15YB	Renesas Electronics	CACHE SRAM
6178S20D	Renesas Electronics	CACHE SRAM
6178S10P	Renesas Electronics	CACHE SRAM
6178S20Y	Renesas Electronics	CACHE SRAM
6178S25P	Renesas Electronics	CACHE SRAM
6178S25YB	Renesas Electronics	CACHE SRAM
6178S25DB	Renesas Electronics	CACHE SRAM
6178S25PB	Renesas Electronics	CACHE SRAM
6178S10D	Renesas Electronics	CACHE SRAM
HM67B3632-9	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK			.65 mm	70 Cel		32KX36	32K		0 Cel		QUAD		R-PQFP-G100		3.6 V	3.05 mm		14 mm	Not Qualified	1179648 bit	3 V	BURST COUNTER; SELF TIMED WRITE CYCLE; ADDRESS/DATA REGISTER						20 mm	9 ns
HM67B3632FP1-12	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK			.65 mm	70 Cel		32KX36	32K		0 Cel		QUAD		R-PQFP-G100		3.465 V	3.05 mm		14 mm	Not Qualified	1179648 bit	3.135 V	BURST COUNTER; SELF TIMED WRITE CYCLE						20 mm	12 ns
HM67C932CP-20	Renesas Electronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5		9	CHIP CARRIER			1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD		S-PQCC-J44		5.5 V	4.57 mm		16.5862 mm	Not Qualified	294912 bit	4.5 V							16.5862 mm	20 ns
HM67C932CP-25	Renesas Electronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5		9	CHIP CARRIER			1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD		S-PQCC-J44		5.5 V	4.57 mm		16.5862 mm	Not Qualified	294912 bit	4.5 V							16.5862 mm	25 ns
HM67B3632-10	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK			.65 mm	70 Cel		32KX36	32K		0 Cel		QUAD		R-PQFP-G100		3.6 V	3.05 mm		14 mm	Not Qualified	1179648 bit	3 V	BURST COUNTER; SELF TIMED WRITE CYCLE; ADDRESS/DATA REGISTER						20 mm	10 ns
HM67B3632FP1-10	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK			.65 mm	70 Cel		32KX36	32K		0 Cel		QUAD		R-PQFP-G100		3.465 V	3.05 mm		14 mm	Not Qualified	1179648 bit	3.135 V	BURST COUNTER; SELF TIMED WRITE CYCLE						20 mm	10 ns
HM67B3632-12	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK			.65 mm	70 Cel		32KX36	32K		0 Cel		QUAD		R-PQFP-G100		3.6 V	3.05 mm		14 mm	Not Qualified	1179648 bit	3 V	BURST COUNTER; SELF TIMED WRITE CYCLE; ADDRESS/DATA REGISTER						20 mm	12 ns
HM67B3632FP1-11	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK			.65 mm	70 Cel		32KX36	32K		0 Cel		QUAD		R-PQFP-G100		3.465 V	3.05 mm		14 mm	Not Qualified	1179648 bit	3.135 V	BURST COUNTER; SELF TIMED WRITE CYCLE						20 mm	11 ns
HM67M1864CP-12	Renesas Electronics	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52		3.6 V	4.57 mm		19.1262 mm	Not Qualified	1179648 bit	3 V	BURST COUNTER; SELF-TIMED WRITE CYCLE; BYTE WRITE CONTROL						19.1262 mm	12 ns
HM67M3632FP-9	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		32KX36	32K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V	SELF-TIMED WRITE; BURST COUNTER						20 mm	9 ns
HM67M3632FP-12	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		32KX36	32K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V	SELF-TIMED WRITE; BURST COUNTER						20 mm	12 ns
HM67B1864-9	Renesas Electronics	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52		3.6 V	4.57 mm		19.1262 mm	Not Qualified	1179648 bit	3 V	BURST COUNTER; SELF TIMED WRITE CYCLE; ADDRESS/DATA REGISTER						19.1262 mm	9 ns
HM67B3632FP1-9	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK			.65 mm	70 Cel		32KX36	32K		0 Cel		QUAD		R-PQFP-G100		3.465 V	3.05 mm		14 mm	Not Qualified	1179648 bit	3.135 V	BURST COUNTER; SELF TIMED WRITE CYCLE						20 mm	9 ns
HM67B3632FP-9	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		32KX36	32K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V	BURST COUNTER; SELF TIMED WRITE CYCLE						20 mm	9 ns
HM67M1864CP-9	Renesas Electronics	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52		3.6 V	4.57 mm		19.1262 mm	Not Qualified	1179648 bit	3 V	BURST COUNTER; SELF-TIMED WRITE CYCLE; BYTE WRITE CONTROL						19.1262 mm	9 ns
71V632S6PFG71V632S6	Renesas Electronics	CACHE SRAM		100		RECTANGULAR	PLASTIC/EPOXY	YES			GULL WING									FLATPACK											QUAD		R-PQFP-G100
71V67703S85BGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	210 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	87 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	20	225		.07 Amp	22 mm	8.5 ns
71V67703S85BG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	190 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	87 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	20	225		.05 Amp	22 mm	8.5 ns
IDT71V3559S80BQG	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	95 MHz	13 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260		.04 Amp	15 mm	8 ns
71V6770380PFG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK				70 Cel		256KX36	256K		0 Cel		QUAD		R-PQFP-G100		3.465 V					9437184 bit	3.135 V	FLOW THROUGH ARCHITECTURE							8 ns
71V25761SA200BGG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		3.465 V	2.36 mm		14 mm		4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1					22 mm	3.1 ns
71V256SA20PZG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	28	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE, THIN PROFILE			.55 mm	70 Cel		32KX8	32K		0 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G28	3	3.6 V	1.2 mm		8 mm	Not Qualified	262144 bit	3 V		e3	NOT SPECIFIED	260			11.8 mm	20 ns
71V67703S80BG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	210 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	100 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	20	225		.05 Amp	22 mm	8 ns
71V3578S133PFGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	QFF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	FLAT	PARALLEL	SYNCHRONOUS	260 mA	262144 words	COMMON	3.3	3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-F100	3	3.465 V	1.6 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260		.035 Amp	20 mm	4.2 ns
HM62W8511HLJP-12	Renesas Electronics	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-J36		3.6 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS						23.25 mm	12 ns
IDT71V67603Z133PFGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel		256KX36	256K		-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3					20 mm	4.2 ns
71V35761SA166BG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	320 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	166 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225		.03 Amp	22 mm	3.5 ns
IDT71V67803Z150BQG	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		512KX18	512K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1					15 mm	3.8 ns
IDT71V35761SA183BG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	340 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	183 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225		.03 Amp	22 mm	3.3 ns
71V25761YS166PF	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	320 mA	131072 words	COMMON	3.3	2.5,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	166 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225		.03 Amp	20 mm	3.5 ns
IDT71V67803S150BGGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY			1.27 mm	85 Cel		512KX18	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1					22 mm	3.8 ns
71V67803133BGGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY			1.27 mm	85 Cel		512KX18	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1					22 mm	4.2 ns
IDT71V67803S150BG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	305 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	150 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225		.05 Amp	22 mm	3.8 ns
IDT71586S25J8	Renesas Electronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		4096 words		5		16	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	4KX16	4K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J44		5.5 V	4.57 mm		16.5862 mm	Not Qualified	65536 bit	4.5 V		e0			YES		16.5862 mm	24 ns
71V3579SA75BGGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY				85 Cel		256KX18	256K		-40 Cel		BOTTOM		R-PBGA-B119		3.465 V					4718592 bit	3.135 V								7.5 ns
71V67803Z150BGGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY			1.27 mm	85 Cel		512KX18	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1					22 mm	3.8 ns
71V6790380BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY				70 Cel		512KX18	512K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V					9437184 bit	3.135 V	FLOW THROUGH ARCHITECTURE							8 ns
IDT71V67703S75BQ	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	265 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	117 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	30	225		.05 Amp	15 mm	7.5 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.