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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
HM621400HJP-10	Renesas Electronics	CACHE SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	4194304 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	4.5 V	0 Cel		DUAL	R-PDSO-J32		5.5 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V					.005 Amp	20.71 mm	10 ns
71V6770380BGGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY				85 Cel		256KX36	256K		-40 Cel		BOTTOM	R-PBGA-B119		3.465 V					9437184 bit	3.135 V	FLOW THROUGH ARCHITECTURE						8 ns
71V6770380BGGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY				85 Cel		256KX36	256K		-40 Cel		BOTTOM	R-PBGA-B119		3.465 V					9437184 bit	3.135 V	FLOW THROUGH ARCHITECTURE						8 ns
IDT71V67603Z150PFGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel		256KX36	256K		-40 Cel	MATTE TIN	QUAD	R-PQFP-G100	3	3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3				20 mm	3.8 ns
HM624256P-35	Renesas Electronics	CACHE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		4	IN-LINE			2.54 mm	70 Cel		256KX4	256K		0 Cel		DUAL	R-PDIP-T28		5.5 V	5.08 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V						34.7 mm	35 ns
IDT71V3577S80BGG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1				22 mm	8 ns
71V35761S183PFG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	340 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	MATTE TIN	QUAD	R-PQFP-G100	3	3.465 V	1.6 mm	183 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260	.03 Amp	20 mm	3.3 ns
71V256SA12PZG	Renesas Electronics	CACHE SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	SRAMs	.55 mm	70 Cel	3-STATE	32KX8	32K	3 V	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G28	3	3.6 V				Not Qualified	262144 bit	3 V		e3	NOT SPECIFIED	260	.002 Amp		12 ns
IDT71V67903S75PFG	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	265 mA	524288 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQFP-G100	3	3.465 V	1.6 mm	117 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e3	30	260	.05 Amp	20 mm	7.5 ns
IDT71V67903S80BQGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		512KX18	512K		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1				15 mm	8 ns
IDT71V3579S85PFGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	85 Cel		256KX18	256K		-40 Cel	MATTE TIN	QUAD	R-PQFP-G100	3	3.465 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e3				20 mm	8.5 ns
71V6770380PFGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK				85 Cel		256KX36	256K		-40 Cel		QUAD	R-PQFP-G100		3.465 V					9437184 bit	3.135 V	FLOW THROUGH ARCHITECTURE						8 ns
71V35781200BQ	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm	200 MHz	13 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	30	225	.03 Amp	15 mm	3.1 ns
HM628511HLJP-12	Renesas Electronics	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	200 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44	SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL	R-PDSO-J36		5.5 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0			.0003 Amp	23.25 mm	12 ns
IDT71V3577S85BGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	190 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm	87 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	20	225	.035 Amp	22 mm	8.5 ns
71V6790380BGGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY				85 Cel		512KX18	512K		-40 Cel		BOTTOM	R-PBGA-B119		3.465 V					9437184 bit	3.135 V	FLOW THROUGH ARCHITECTURE						8 ns
HM62W16255HJPI-15	Renesas Electronics	CACHE SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE			1.27 mm	85 Cel		256KX16	256K		-40 Cel		DUAL	R-PDSO-J44		3.6 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	3 V						28.33 mm	15 ns
71V632ZS6PFGI71V632ZS6	Renesas Electronics	CACHE SRAM		100		RECTANGULAR	PLASTIC/EPOXY	YES			GULL WING									FLATPACK											QUAD	R-PQFP-G100
IDT71V67703S85BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	190 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm	87 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260	.05 Amp	22 mm	8.5 ns
IDT71V67803S133BG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm	133 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.05 Amp	22 mm	4.2 ns
IDT71V67703S75BGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	285 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	256KX36	256K	3.14 V	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm	117 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	20	225	.07 Amp	22 mm	7.5 ns
71V6770380BQG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY				70 Cel		256KX36	256K		0 Cel		BOTTOM	R-PBGA-B165		3.465 V					9437184 bit	3.135 V	FLOW THROUGH ARCHITECTURE						8 ns
HM62W4100HJP-15	Renesas Electronics	CACHE SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	160 mA	1048576 words	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	3 V	0 Cel		DUAL	R-PDSO-J32		3.6 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS				.005 Amp	20.71 mm	15 ns
71V3578SA150PFG	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	QFF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	FLAT	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK				70 Cel		256KX18	256K		0 Cel	MATTE TIN	QUAD	R-PQFP-F100	3	3.465 V			14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3				20 mm	3.8 ns
HM62W8201HTT-15	Renesas Electronics	CACHE SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		2MX8	2M		0 Cel		DUAL	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V						18.41 mm	15 ns
IDT71V67703S80B	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119		3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0				22 mm	8 ns
71V6770375BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY				70 Cel		256KX36	256K		0 Cel		BOTTOM	R-PBGA-B119		3.465 V					9437184 bit	3.135 V	FLOW THROUGH ARCHITECTURE						7.5 ns
71V6790375BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY				70 Cel		512KX18	512K		0 Cel		BOTTOM	R-PBGA-B119		3.465 V					9437184 bit	3.135 V	FLOW THROUGH ARCHITECTURE						7.5 ns
UPD46741ALP-12	Renesas Electronics	CACHE SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	ASYNCHRONOUS	300 mA	16384 words	COMMON	5	5	20	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	16KX20	16K		0 Cel	Tin/Lead (Sn/Pb)	QUAD	S-PQCC-J68		5.5 V				Not Qualified	327680 bit	4.5 V		e0					12 ns
IDT71V67903S75BQG	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		512KX18	512K		0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1				15 mm	7.5 ns
71V25761YS183BGGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	85 Cel		128KX36	128K		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B119		3.465 V	2.36 mm		14 mm		4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1				22 mm	3.3 ns
IDT71V3577S85BQ8	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	180 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm	87 MHz	13 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	30	225	.03 Amp	15 mm	8.5 ns
HM62C3232FP-7	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		32KX32	32K		0 Cel		QUAD	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	1048576 bit	3.1 V						20 mm	7 ns
71V3557S85PFG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	225 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	MATTE TIN	QUAD	R-PQFP-G100	3	3.465 V	1.6 mm	90 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e3	30	260	.04 Amp	20 mm	8.5 ns
71V67803Z150BQGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		512KX18	512K		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1				15 mm	3.8 ns
HM62W8201HLJP-15	Renesas Electronics	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		2MX8	2M		0 Cel		DUAL	R-PDSO-J36		3.6 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	3 V						23.25 mm	15 ns
HM6216255HLTT-15	Renesas Electronics	CACHE SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		256KX16	256K		0 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				18.41 mm	15 ns
IDT71V3578S133PFG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQFP-G100	3	3.465 V	1.6 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260	.03 Amp	20 mm	4.2 ns
HM6289JP-35	Renesas Electronics	CACHE SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		16KX4	16K		0 Cel		DUAL	R-PDSO-J24		5.5 V	3.76 mm		7.62 mm	Not Qualified	65536 bit	4.5 V						15.63 mm	35 ns
71V3559S75PFG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	275 mA	262144 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	MATTE TIN	QUAD	R-PQFP-G100	3	3.465 V	1.6 mm	100 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e3	30	260	.04 Amp	20 mm	7.5 ns
71V3579S75BGGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY				85 Cel		256KX18	256K		-40 Cel		BOTTOM	R-PBGA-B119		3.465 V					4718592 bit	3.135 V							7.5 ns
IDT71V67803150BGGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY			1.27 mm	85 Cel		512KX18	512K		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1				22 mm	3.8 ns
71V6790385PFG	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK				70 Cel		512KX18	512K		0 Cel		QUAD	R-PQFP-G100		3.465 V					9437184 bit	3.135 V	FLOW THROUGH ARCHITECTURE						8.5 ns
71V2578YS133PFI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	260 mA	262144 words	COMMON	3.3	2.5,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	TIN LEAD	QUAD	R-PQFP-G100	3	3.465 V		133 MHz		Not Qualified	4718592 bit	3.135 V		e0	20	225	.035 Amp		4.2 ns
71V2578S133PF	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	2.5,3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.635 mm	70 Cel	3-STATE	256KX18	256K	3.13 V	0 Cel	TIN LEAD	QUAD	R-PQFP-G100	3	3.465 V		133 MHz		Not Qualified	4718592 bit	3.135 V		e0	20	225	.03 Amp		4.2 ns
71V2576S150BQI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	305 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V		150 MHz		Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	30	225	.03 Amp		3.8 ns
71V2578YS133BQ	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V		133 MHz		Not Qualified	4718592 bit	3.135 V		e0	30	225	.03 Amp		4.2 ns
71V2576S133BGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.13 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B119	3	3.465 V		133 MHz		Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.035 Amp		4.2 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.