CACHE SRAM SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
71V67603Z166BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1					22 mm	3.5 ns
71V3579SA85BQG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY				70 Cel		256KX18	256K		0 Cel		BOTTOM		R-PBGA-B165		3.465 V					4718592 bit	3.135 V								8.5 ns
IDT71V256SA12YG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	90 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	3 V	0 Cel	MATTE TIN	DUAL	1	R-PDSO-J28	3	3.6 V	3.556 mm		7.5184 mm	Not Qualified	262144 bit	3 V		e3	40	260	YES	.002 Amp	17.9324 mm	12 ns
71V67903S75BGGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	285 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	117 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260		.07 Amp	22 mm	7.5 ns
HM621100ALJP-25	Renesas Electronics	CACHE SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	120 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ28,.44	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	2 V	0 Cel		DUAL		R-PDSO-J28		5.5 V				Not Qualified	1048576 bit	4.5 V						.0001 Amp		25 ns
IDT71V3579S80PFG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	200 mA	262144 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	Matte Tin (Sn) - annealed	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	100 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e3	30	260		.03 Amp	20 mm	8 ns
71V6770380BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY				70 Cel		256KX36	256K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V					9437184 bit	3.135 V	FLOW THROUGH ARCHITECTURE							8 ns
IDT71V3579SA85BQG	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		256KX18	256K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm		13 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1					15 mm	8.5 ns
71V3577SA85BG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	180 mA	131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.465 V	2.36 mm		14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0					22 mm	8.5 ns
IDT71V3578S133PFGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	260 mA	262144 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260		.035 Amp	20 mm	4.2 ns
IDT71V67603S133PFG	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	260 mA	262144 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	Matte Tin (Sn) - annealed	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	133 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260		.05 Amp	20 mm	4.2 ns
71V67603150BQG	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		256KX36	256K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1					15 mm	3.8 ns
IDT71V67603S150BGGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY			1.27 mm	85 Cel		256KX36	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1					22 mm	3.8 ns
71V3578S133PFG	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	QFF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	FLAT	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	3.3	18	FLATPACK	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	MATTE TIN	QUAD		R-PQFP-F100	3	3.465 V	1.6 mm	133 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260		.03 Amp	20 mm	4.2 ns
HM621100ALP-20	Renesas Electronics	CACHE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	DIP28,.4	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	2 V	0 Cel		DUAL		R-PDIP-T28		5.5 V			10.16 mm	Not Qualified	1048576 bit	4.5 V						.0001 Amp	34.7 mm	20 ns
IDT71V3557S85BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	225 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	90 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260		.04 Amp	22 mm	8.5 ns
71V67903S80BQG	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	210 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	100 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260		.05 Amp	15 mm	8 ns
IDT71V67603166BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1					22 mm	3.5 ns
IDT71V3577S85BGGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	85 Cel		128KX36	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1					22 mm	8.5 ns
IDT71V3579S80PFGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	210 mA	262144 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	100 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e3	30	260		.035 Amp	20 mm	8 ns
IDT71V67803166BQG	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		512KX18	512K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1					15 mm	3.5 ns
71V25761YS183BQGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	183 MHz	13 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.035 Amp	15 mm	3.3 ns
71V25761S183BGG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		3.465 V	2.36 mm		14 mm		4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1					22 mm	3.3 ns
71V3579SA85BGGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	190 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V		87 MHz		Not Qualified	4718592 bit	3.135 V	FLOW THROUGH ARCHITECTURE	e1	30	260		.035 Amp		8.5 ns
71V67903S75BG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	265 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	117 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	20	225		.05 Amp	22 mm	7.5 ns
IDT71V67603133BQGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		256KX36	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1					15 mm	4.2 ns
71V3579SA80BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	200 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V		100 MHz		Not Qualified	4718592 bit	3.135 V	FLOW THROUGH ARCHITECTURE	e1	30	260		.03 Amp		8 ns
71V67803Z166PFG	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel		512KX18	512K		0 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3					20 mm	3.5 ns
IDT71V35761SA183BGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	183 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225		.035 Amp	22 mm	3.3 ns
UPD4483362GF-A75-A	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	50 Cel		256KX36	256K		0 Cel	TIN BISMUTH	QUAD		R-PQFP-G100		3.465 V	1.7 mm		14 mm	Not Qualified	9437184 bit	3.135 V		e6	NOT SPECIFIED	NOT SPECIFIED			20 mm	3.8 ns
IDT71V67602S166BGG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1					22 mm	3.5 ns
71V67803Z133BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1					22 mm	4.2 ns
IDT71V67803Z133PFGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	85 Cel		512KX18	512K		-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3					20 mm	4.2 ns
HM62W1400HLTT-12	Renesas Electronics	CACHE SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4194304 words		3.3		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		4MX1	4M		0 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V							20.95 mm	12 ns
71V3577SA75BQGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	265 mA	131072 words		3.3		36	GRID ARRAY			1 mm	85 Cel		128KX36	128K		-40 Cel		BOTTOM		R-PBGA-B165		3.465 V			13 mm		4718592 bit	3.135 V							15 mm	7.5 ns
71V6770385BQG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY				70 Cel		256KX36	256K		0 Cel		BOTTOM		R-PBGA-B165		3.465 V					9437184 bit	3.135 V	FLOW THROUGH ARCHITECTURE							8.5 ns
71V6770385PFG	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK				70 Cel		256KX36	256K		0 Cel		QUAD		R-PQFP-G100		3.465 V					9437184 bit	3.135 V	FLOW THROUGH ARCHITECTURE							8.5 ns
71V67903S80BQGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	230 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	100 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260		.07 Amp	15 mm	8 ns
IDT71V67603Z166PFG	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		256KX36	256K		0 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3					20 mm	3.5 ns
IDT71V3578S150PFG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	295 mA	262144 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	Matte Tin (Sn) - annealed	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	150 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260		.03 Amp	20 mm	3.8 ns
HM6289JP-25	Renesas Electronics	CACHE SRAM	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		16384 words		5		4	SMALL OUTLINE			1.27 mm	70 Cel		16KX4	16K		0 Cel		DUAL		R-PDSO-J24		5.5 V	3.76 mm		7.62 mm	Not Qualified	65536 bit	4.5 V							15.63 mm	25 ns
71V3578S150PFGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	305 mA	262144 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	150 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260		.035 Amp	20 mm	3.8 ns
IDT71B229S22Y8	Renesas Electronics	CACHE SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5		9	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		5.25 V	3.76 mm		7.62 mm	Not Qualified	294912 bit	4.75 V	16K X 9 DUAL ARRAY FOR INSTRUCTION AND DATA	e0			YES		20.96 mm	22 ns
IDT71V3579SA80BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		3.465 V	2.36 mm		14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1					22 mm	8 ns
HM6216255HJP-10	Renesas Electronics	CACHE SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		262144 words		5		16	SMALL OUTLINE			1.27 mm	70 Cel		256KX16	256K		0 Cel		DUAL		R-PDSO-J44		5.5 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS						28.33 mm	10 ns
HM62W8201HJP-15	Renesas Electronics	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		2MX8	2M		0 Cel		DUAL		R-PDSO-J36		3.6 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	3 V							23.25 mm	15 ns
71V67903S85BQGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	210 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	512KX18	512K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	87 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260		.07 Amp	15 mm	8.5 ns
HM624256LP-45	Renesas Electronics	CACHE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		4	IN-LINE			2.54 mm	70 Cel		256KX4	256K		0 Cel		DUAL		R-PDIP-T28		5.5 V	5.08 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V							34.7 mm	45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.