CACHE SRAM SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
71V2578S133BG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.13 V	0 Cel	TIN LEAD	BOTTOM	X-PBGA-B119	3	3.465 V		133 MHz		Not Qualified	4718592 bit	3.135 V		e0	20	225	.03 Amp		4.2 ns
71V2578S133BQI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V		133 MHz		Not Qualified	4718592 bit	3.135 V		e0	30	225	.035 Amp		4.2 ns
71V432S6PFG	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	32KX32	32K	3.14 V	0 Cel	MATTE TIN	QUAD	R-PQFP-G100	3	3.63 V	1.6 mm	83 MHz	14 mm	Not Qualified	1048576 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260	.015 Amp	20 mm	6 ns
71V2576S150BG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	295 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.13 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119	3	3.465 V		150 MHz		Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.03 Amp		3.8 ns
71V432S5PFI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	200 mA	32768 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	32KX32	32K	3.14 V	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	R-PQFP-G100	3	3.63 V	1.6 mm	100 MHz	14 mm	Not Qualified	1048576 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.015 Amp	20 mm	5 ns
71V2578S150BQ	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	295 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V		150 MHz		Not Qualified	4718592 bit	3.135 V		e0	30	225	.03 Amp		3.8 ns
71V2576S150BQ	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	295 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V		150 MHz		Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	30	225	.03 Amp		3.8 ns
71V2578YS133BQI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V		133 MHz		Not Qualified	4718592 bit	3.135 V		e0	30	225	.035 Amp		4.2 ns
71V2576S133BQ	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V		133 MHz		Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	30	225	.03 Amp		4.2 ns
71V2578S150BQI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	305 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V		150 MHz		Not Qualified	4718592 bit	3.135 V		e0	30	225	.035 Amp		3.8 ns
71V2578YS133PF	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	2.5,3.3	18	FLATPACK	QFP100,.63X.87		SRAMs	.635 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	QUAD	R-PQFP-G100	3	3.465 V		133 MHz		Not Qualified	4718592 bit	3.135 V		e0	20	225	.03 Amp		4.2 ns
71V2578S150PFI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	305 mA	262144 words	COMMON	3.3	2.5,3.3	18	FLATPACK	QFP100,.63X.87		SRAMs	.635 mm	85 Cel	3-STATE	256KX18	256K	3.13 V	-40 Cel	TIN LEAD	QUAD	R-PQFP-G100	3	3.465 V		150 MHz		Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.035 Amp		3.8 ns
71V2578SA133BGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY					85 Cel		256KX18	256K		-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B119	3	3.465 V					4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225			4.2 ns
71V2576YS150PF	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	295 mA	131072 words	COMMON	3.3	2.5,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	QUAD	R-PQFP-G100	3	3.465 V	1.6 mm	150 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.03 Amp	20 mm	3.8 ns
71V2576S133BQI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V		133 MHz		Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	30	225	.03 Amp		4.2 ns
71V2576S150BGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	305 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.13 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B119	3	3.465 V		150 MHz		Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.035 Amp		3.8 ns
71V432S5PF	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	200 mA	32768 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	32KX32	32K	3.14 V	0 Cel	TIN LEAD	QUAD	R-PQFP-G100	3	3.63 V	1.6 mm	100 MHz	14 mm	Not Qualified	1048576 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.015 Amp	20 mm	5 ns
71V2576S150PF	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	295 mA	131072 words	COMMON	3.3	2.5,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	3.13 V	0 Cel	TIN LEAD	QUAD	R-PQFP-G100	3	3.465 V	1.6 mm	150 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.03 Amp	20 mm	3.8 ns
71V2576S133BG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.13 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B119	3	3.465 V		133 MHz		Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.03 Amp		4.2 ns
71V2576YS150PFI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	305 mA	131072 words	COMMON	3.3	2.5,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	R-PQFP-G100	3	3.465 V	1.6 mm	150 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225	.035 Amp	20 mm	3.8 ns
71V2578S133BQ	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	2.5,3.3	18	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	3.465 V		133 MHz		Not Qualified	4718592 bit	3.135 V		e0	30	225	.03 Amp		4.2 ns
71V432S6PFI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	32KX32	32K	3.14 V	-40 Cel	TIN LEAD	QUAD	R-PQFP-G100	3	3.63 V	1.6 mm	83 MHz	14 mm	Not Qualified	1048576 bit	3.135 V		e0	20	225	.015 Amp	20 mm	6 ns
71V432S5PFG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	200 mA	32768 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	32KX32	32K	3.14 V	0 Cel	MATTE TIN	QUAD	R-PQFP-G100	3	3.63 V	1.6 mm	100 MHz	14 mm	Not Qualified	1048576 bit	3.135 V		e3	30	260	.015 Amp	20 mm	5 ns
71V432S6PFG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	32KX32	32K	3.14 V	0 Cel	MATTE TIN	QUAD	R-PQFP-G100	3	3.63 V	1.6 mm	83 MHz	14 mm	Not Qualified	1048576 bit	3.135 V		e3	30	260	.015 Amp	20 mm	6 ns
71V432S5PFGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	200 mA	32768 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	32KX32	32K	3.14 V	-40 Cel	MATTE TIN	QUAD	R-PQFP-G100	3	3.63 V	1.6 mm	100 MHz	14 mm	Not Qualified	1048576 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260	.015 Amp	20 mm	5 ns
71V67602S133BQG	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY, THIN PROFILE				1 mm	70 Cel		256KX36	256K		0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		3.465 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1				15 mm	4.2 ns
71V3559SA85BQG	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	225 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	18	SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm	90 MHz	13 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECHTURE	e1	30	260	.04 Amp	15 mm	8.5 ns
71V67802S150PFG	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK, LOW PROFILE				.65 mm	70 Cel		512KX18	512K		0 Cel	MATTE TIN	QUAD	R-PQFP-G100	3	3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3				20 mm	3.8 ns
71V3557SA80BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	18	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm	95 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECHTURE	e1	30	260	.04 Amp	22 mm	8 ns
71V67602S133BQGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		256KX36	256K		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		3.465 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1				15 mm	4.2 ns
71V67802S133PFG	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK, LOW PROFILE				.65 mm	70 Cel		512KX18	512K		0 Cel	MATTE TIN	QUAD	R-PQFP-G100	3	3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3				20 mm	4.2 ns
71V67602S166BQG	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY, THIN PROFILE				1 mm	70 Cel		256KX36	256K		0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165		3.465 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1				15 mm	3.5 ns
71V67802S133BQGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		512KX18	512K		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm		13 mm		9437184 bit	3.135 V		e1		260		15 mm	4.2 ns
71V67802S150BQG	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY, THIN PROFILE				1 mm	70 Cel		512KX18	512K		0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm		13 mm		9437184 bit	3.135 V		e1		260		15 mm	3.8 ns
71V3557SA80BQGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	18	SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm	95 MHz	13 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECHTURE	e1	30	260	.045 Amp	15 mm	8 ns
71V3559SA80BQG	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	18	SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm	95 MHz	13 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECHTURE	e1	30	260	.04 Amp	15 mm	8 ns
71V67802S133BQG	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY, THIN PROFILE				1 mm	70 Cel		512KX18	512K		0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm		13 mm		9437184 bit	3.135 V		e1		260		15 mm	4.2 ns
71V67802S150BQGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		512KX18	512K		-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm		13 mm		9437184 bit	3.135 V		e1		260		15 mm	3.8 ns
71V3559SA85BQGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	235 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	18	SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm	90 MHz	13 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECHTURE	e1	30	260	.045 Amp	15 mm	8.5 ns
71V3559SA75BQG	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	275 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	18	SRAMs	1 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm	100 MHz	13 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECHTURE	e1	30	260	.04 Amp	15 mm	7.5 ns
71V3557SA85BGGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	235 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	18	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm	90 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECHTURE	e1	30	260	.045 Amp	22 mm	8.5 ns
71V3557SA85BQG	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	225 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	18	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm	90 MHz	13 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECHTURE	e1	30	260	.04 Amp	15 mm	8.5 ns
71V3557SA80BGGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50	18	SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B119	3	3.465 V	2.36 mm	95 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECHTURE	e1	30	260	.045 Amp	22 mm	8 ns
71V67802S133PFGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK, LOW PROFILE				.65 mm	85 Cel		512KX18	512K		-40 Cel	MATTE TIN	QUAD	R-PQFP-G100	3	3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3				20 mm	4.2 ns
71V67802S166PFG	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK, LOW PROFILE				.65 mm	70 Cel		512KX18	512K		0 Cel	MATTE TIN	QUAD	R-PQFP-G100	3	3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3				20 mm	3.5 ns
71V3557SA80BQG	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	18	SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm	95 MHz	13 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECHTURE	e1	30	260	.04 Amp	15 mm	8 ns
71V3557SA85BQGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	235 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	18	SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm	90 MHz	13 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECHTURE	e1	30	260	.045 Amp	15 mm	8.5 ns
71V3559SA80BQGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40	18	SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	R-PBGA-B165	3	3.465 V	1.2 mm	95 MHz	13 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECHTURE	e1	30	260	.045 Amp	15 mm	8 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.