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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C1440AV33-167AXC	Cypress Semiconductor	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	375 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	1MX36	1M	3.14 V	0 Cel	NICKEL PALLADIUM GOLD	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	167 MHz	14 mm	Not Qualified	37748736 bit	3.135 V	PIPELINED ARCHITECTURE	e4	40	260			20 mm	3.4 ns
CY7C1440AV33-167BZC	Cypress Semiconductor	CACHE SRAM	COMMERCIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		3.3		36	GRID ARRAY, LOW PROFILE				1 mm	70 Cel		1MX36	1M		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	3.6 V	1.4 mm		15 mm	Not Qualified	37748736 bit	3.135 V	PIPELINED ARCHITECTURE	e0					17 mm	3.4 ns
CY7C1480BV33-200AXC	Infineon Technologies	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	500 mA	2097152 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	2MX36	2M	3.14 V	0 Cel	NICKEL PALLADIUM GOLD	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm	200 MHz	14 mm	Not Qualified	75497472 bit	3.135 V	PIPELINED ARCHITECTURE	e4	40	260			20 mm	3 ns
CY7C1481BV33-133AXI	Infineon Technologies	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		2097152 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	2MX36	2M	3.14 V	-40 Cel	PURE TIN	QUAD		R-PQFP-G100	3	3.63 V	1.6 mm	133 MHz	14 mm	Not Qualified	75497472 bit	3.135 V	FLOW-THROUGH ARCHITECTURE			260			20 mm	6.5 ns
CY7C150-10SCR	Cypress Semiconductor	CACHE SRAM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1024 words		5		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	1KX4	1K		0 Cel		DUAL	1	R-PDSO-G24		5.5 V	2.65 mm		7.5 mm	Not Qualified	4096 bit	4.5 V					YES		15.4 mm	10 ns
MCM62940AFN14	Motorola	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	165 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ		SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J44		5.5 V	4.57 mm		16.5862 mm	Not Qualified	294912 bit	4.5 V	OUTPUT BUFFER SUPPLY VOLTAGE 5V +/- 10% OR 3.3V +/- 10%; SELF-TIMED WRITE; BURST COUNTER	e0			YES	.03 Amp	16.5862 mm	14 ns
TC551402J-25	Toshiba	CACHE SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	4194304 words	CONFIGURABLE	5	5	1	SMALL OUTLINE	SOJ32,.44	4	SRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	4.5 V	0 Cel		DUAL	1	R-PDSO-J32		5.25 V	3.7 mm		10.16 mm	Not Qualified	4194304 bit	4.75 V					YES	.01 Amp	20.96 mm	25 ns
SN74ACT2140AFN	Texas Instruments	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		18	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	8KX18	8K		0 Cel		QUAD	1	S-PQCC-J52		5.25 V	4.57 mm		19.1262 mm	Not Qualified	147456 bit	4.75 V	CONFIGURED AS 2-WAY 4K X 18 OR DIRECT MAPPED 8K X 18				YES		19.1262 mm	25 ns
SN74BCT2141FN	Texas Instruments	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		8192 words	COMMON			18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	8KX18	8K		0 Cel		QUAD		S-PQCC-J52			4.57 mm		19.1262 mm	Not Qualified	147456 bit				NOT SPECIFIED	NOT SPECIFIED			19.1262 mm
SN74ACT2140AFNR	Texas Instruments	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		18	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	8KX18	8K		0 Cel		QUAD	1	S-PQCC-J52		5.25 V	4.57 mm		19.1262 mm	Not Qualified	147456 bit	4.75 V	CONFIGURED AS 2-WAY 4K X 18 OR DIRECT MAPPED 8K X 18				YES		19.1262 mm	25 ns
SN74ACT2140A-25FN	Texas Instruments	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words	COMMON			18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	8KX18	8K		0 Cel		QUAD		S-PQCC-J52						Not Qualified	147456 bit									25 ns
M62486AQ11	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ		SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.75 V	0 Cel	TIN LEAD	QUAD		S-PQCC-J44		5.25 V	4.7 mm		16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE	e0				.03 Amp	16.5862 mm	11 ns
M62486RQ8	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ		SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.75 V	0 Cel	TIN LEAD	QUAD		S-PQCC-J44		5.25 V	4.7 mm		16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE	e0				.03 Amp	16.5862 mm	8 ns
M62486AQ14TR	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER				1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD		S-PQCC-J44		5.25 V	4.7 mm		16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE						16.5862 mm	14 ns
MK62940AQ14	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel		QUAD	1	S-PQCC-J44		5.25 V	4.7 mm		16.5862 mm	Not Qualified	294912 bit	4.75 V	BURST COUNTER; SELF TIMED WRITE CYCLE				YES		16.5862 mm	14 ns
M62486RQ9	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ		SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.75 V	0 Cel	TIN LEAD	QUAD		S-PQCC-J44		5.25 V	4.7 mm		16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE	e0				.03 Amp	16.5862 mm	9 ns
MK62940Q19	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	160 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ		SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J44		5.25 V	4.7 mm		16.5862 mm	Not Qualified	294912 bit	4.75 V	BURST COUNTER; SELF TIMED WRITE CYCLE	e0			YES	.03 Amp	16.5862 mm	19 ns
M62486AQ12	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ		SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.75 V	0 Cel	TIN LEAD	QUAD		S-PQCC-J44		5.25 V	4.7 mm		16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE	e0				.03 Amp	16.5862 mm	12 ns
M62940AQ12TR	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER				1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD		S-PQCC-J44		5.25 V	4.7 mm		16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE						16.5862 mm	12 ns
MK62486Q19	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	160 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ		SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J44		5.25 V	4.7 mm		16.5862 mm	Not Qualified	294912 bit	4.75 V	BURST COUNTER; SELF TIMED WRITE CYCLE	e0			YES	.03 Amp	16.5862 mm	19 ns
M62486AQ14	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ		SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.75 V	0 Cel	TIN LEAD	QUAD		S-PQCC-J44		5.25 V	4.7 mm		16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE	e0				.03 Amp	16.5862 mm	14 ns
M62486RQ9TR	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER				1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD		S-PQCC-J44		5.25 V	4.7 mm		16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE						16.5862 mm	9 ns
MK62486Q24	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	160 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ		SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J44		5.25 V	4.7 mm		16.5862 mm	Not Qualified	294912 bit	4.75 V	BURST COUNTER; SELF TIMED WRITE CYCLE	e0			YES	.03 Amp	16.5862 mm	24 ns
M62940AQ14TR	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER				1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD		S-PQCC-J44		5.25 V	4.7 mm		16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE						16.5862 mm	14 ns
MK62940AQ11	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel		QUAD	1	S-PQCC-J44		5.25 V	4.7 mm		16.5862 mm	Not Qualified	294912 bit	4.75 V	BURST COUNTER; SELF TIMED WRITE CYCLE				YES		16.5862 mm	11 ns
M62486AQ11TR	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER				1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD		S-PQCC-J44		5.25 V	4.7 mm		16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE						16.5862 mm	11 ns
MK62940AQ12	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel		QUAD	1	S-PQCC-J44		5.25 V	4.7 mm		16.5862 mm	Not Qualified	294912 bit	4.75 V	BURST COUNTER; SELF TIMED WRITE CYCLE				YES		16.5862 mm	12 ns
M62940AQ11TR	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER				1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD		S-PQCC-J44		5.25 V	4.7 mm		16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE						16.5862 mm	11 ns
M62486AQ12TR	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER				1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD		S-PQCC-J44		5.25 V	4.7 mm		16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE						16.5862 mm	12 ns
M62486RQ8TR	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER				1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD		S-PQCC-J44		5.25 V	4.7 mm		16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE						16.5862 mm	8 ns
MK62940Q24	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	160 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ		SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J44		5.25 V	4.7 mm		16.5862 mm	Not Qualified	294912 bit	4.75 V	BURST COUNTER; SELF TIMED WRITE CYCLE	e0			YES	.03 Amp	16.5862 mm	24 ns
SCM63P733ATQ133	NXP Semiconductors	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK, LOW PROFILE				.65 mm	85 Cel		128KX32	128K		-40 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm		4194304 bit	3.135 V	PIPELINED ARCHITECTURE						20 mm	4 ns
SCM63F733ATQ10R	NXP Semiconductors	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK, LOW PROFILE				.65 mm	85 Cel		128KX32	128K		-40 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm		4194304 bit	3.135 V	FLOW-THROUGH ARCHITECTURE						20 mm	10 ns
8602301EX	NXP Semiconductors	CACHE SRAM	MILITARY	16	DIP	RECTANGULAR	UNSPECIFIED	NO	1	BIPOLAR	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE					125 Cel		256X1	256		-55 Cel		DUAL		R-XDIP-T16		5.25 V				Not Qualified	256 bit	4.75 V
SCM63F733ATQ11R	NXP Semiconductors	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK, LOW PROFILE				.65 mm	85 Cel		128KX32	128K		-40 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm		4194304 bit	3.135 V	FLOW-THROUGH ARCHITECTURE						20 mm	11 ns
SCM63F733ATQ11	NXP Semiconductors	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK, LOW PROFILE				.65 mm	85 Cel		128KX32	128K		-40 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm		4194304 bit	3.135 V	FLOW-THROUGH ARCHITECTURE						20 mm	11 ns
SCM63P733ATQ133R	NXP Semiconductors	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK, LOW PROFILE				.65 mm	85 Cel		128KX32	128K		-40 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm		4194304 bit	3.135 V	PIPELINED ARCHITECTURE						20 mm	4 ns
SCM63F733ATQ10	NXP Semiconductors	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK, LOW PROFILE				.65 mm	85 Cel		128KX32	128K		-40 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm		4194304 bit	3.135 V	FLOW-THROUGH ARCHITECTURE						20 mm	10 ns
82S16/BEA	NXP Semiconductors	CACHE SRAM	MILITARY	16		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5		1	IN-LINE					125 Cel		256X1	256		-55 Cel		DUAL		R-CDIP-T16		5.5 V				Not Qualified	256 bit	4.5 V								70 ns
8602301FX	NXP Semiconductors	CACHE SRAM	MILITARY	16	DFP	RECTANGULAR	UNSPECIFIED	YES	1	BIPOLAR	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		256 words		5		1	FLATPACK					125 Cel		256X1	256		-55 Cel		DUAL		R-XDFP-F16		5.25 V				Not Qualified	256 bit	4.75 V
MCM63F819TQ8.5	NXP Semiconductors	CACHE SRAM		100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	330 mA	262144 words	COMMON	3.3		18	FLATPACK, LOW PROFILE	QFP100,.63X.87			.65 mm	70 Cel		256KX18	256K	3.125 V	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	90 MHz	14 mm		4718592 bit	3.135 V	FLOW THROUGH ARCHITECTURE				YES	.005 Amp	20 mm	8.5 ns
MCM69F737TQ8	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE				.65 mm	70 Cel	3-STATE	128KX36	128K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE	e0			YES		20 mm	8 ns
MCM63P819KTQ133	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE				.65 mm	70 Cel		256KX18	256K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE						20 mm	4 ns
MCM69P618CTQ4R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	FLATPACK, LOW PROFILE				.65 mm	70 Cel		64KX18	64K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm		1179648 bit	3.135 V							20 mm	4 ns
MCM67B618AFN10	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS	265 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ		SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		5.25 V	4.57 mm		19.1262 mm	Not Qualified	1179648 bit	4.75 V	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE	e0			YES	.095 Amp	19.1262 mm	10 ns
MCM63P919TQ225	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		524288 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm	225 MHz	14 mm	Not Qualified	9437184 bit	3.135 V							20 mm	2.6 ns
MCM69P818ZP3.5R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY				1.27 mm	70 Cel		256KX18	256K		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0					22 mm	3.5 ns
MCM6343YJ10B	NXP Semiconductors	CACHE SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	SMALL OUTLINE				1.27 mm	70 Cel		256KX16	256K		0 Cel		DUAL		R-PDSO-J44		3.6 V	3.76 mm		10.16 mm		4194304 bit	3 V							28.575 mm	10 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.