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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MCM63P733ATQ117	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK, LOW PROFILE			.65 mm	70 Cel		128KX32	128K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm		4194304 bit	3.135 V	PIPELINED ARCHITECTURE				20 mm	4.2 ns
MCM63F819KZP11R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE				22 mm	11 ns
MCM63F737KTQ8.5	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		128KX36	128K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE				20 mm	8.5 ns
MCM69P819ZP3.5R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel	3-STATE	256KX18	256K		0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	LINEAR/INTERLEAVED BURST SEQUENCE; INTERNALLY SELF-TIMED WRITE CYCLE; BYTE/GLOBAL WRITE CONTROL	e0	YES		22 mm	3.5 ns
MCM69D536TQ5	NXP Semiconductors	CACHE SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		32KX36	32K		0 Cel		QUAD		S-PQFP-G176		3.465 V	1.6 mm		24 mm		1179648 bit	3.135 V					24 mm	5 ns
MCM63F819ZP10	NXP Semiconductors	CACHE SRAM		119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	285 mA	262144 words	COMMON	3.3		18	GRID ARRAY	BGA119,7X17,50		1.27 mm	70 Cel		256KX18	256K	3.125 V	0 Cel		BOTTOM	1	R-PBGA-B119		3.6 V	2.4 mm	66 MHz	14 mm		4718592 bit	3.135 V	FLOW THROUGH ARCHITECTURE		YES	.005 Amp	22 mm	10 ns
MCM69P536CTQ7R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		32KX36	32K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm		1179648 bit	3.135 V					20 mm	7 ns
MCM63P919ZP225R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel		BOTTOM		R-PBGA-B119		3.465 V	2.4 mm	225 MHz	14 mm	Not Qualified	9437184 bit	3.135 V					22 mm	2.6 ns
MCM63P837ZP166R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel		BOTTOM		R-PBGA-B119		3.465 V	2.4 mm	166 MHz	14 mm	Not Qualified	9437184 bit	3.135 V					22 mm	3.5 ns
MCM69P737ZP3.5R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	425 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE			.045 Amp	22 mm	3.5 ns
MCM69F618CTQ7.5	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel		64KX18	64K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm		1179648 bit	3.135 V					20 mm	7.5 ns
MCM69P536CTQ4R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		32KX36	32K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm		1179648 bit	3.135 V					20 mm	4 ns
MCM63F737KZP11R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE				22 mm	11 ns
MCM67A618AFN12	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	ASYNCHRONOUS	280 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		5.25 V	4.57 mm		19.1262 mm	Not Qualified	1179648 bit	4.75 V	BYTE WRITE	e0	YES	.02 Amp	19.1262 mm	12 ns
MCM69F819ZP11R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm		4718592 bit	3.135 V	FLOW-THROUGH				22 mm	11 ns
MCM69F618CTQ8.5R	NXP Semiconductors	CACHE SRAM	OTHER	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	110 Cel	3-STATE	64KX18	64K		20 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V		e0	YES		20 mm	8.5 ns
MCM69P737ZP3.0R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	475 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel		BOTTOM		R-PBGA-B119		3.465 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE			.045 Amp	22 mm	3 ns
MCM63P818ZP100	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE				22 mm	5 ns
MCM69P737ZP3.2	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel		BOTTOM		R-PBGA-B119		3.465 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE			.045 Amp	22 mm	3.2 ns
MCM67A618AFN15	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	ASYNCHRONOUS	265 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		5.25 V	4.57 mm		19.1262 mm	Not Qualified	1179648 bit	4.75 V	BYTE WRITE	e0	YES	.02 Amp	19.1262 mm	15 ns
MCM63F737TQ9R	NXP Semiconductors	CACHE SRAM		100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	370 mA	131072 words	COMMON	3.3		36	FLATPACK, LOW PROFILE	QFP100,.63X.87		.65 mm	70 Cel		128KX36	128K	3.125 V	0 Cel		QUAD	1	R-PQFP-G100		3.6 V	1.6 mm	75 MHz	14 mm		4718592 bit	3.135 V	FLOW THROUGH ARCHITECTURE		YES	.005 Amp	20 mm	9 ns
MCM63F837ZP8	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel		BOTTOM		R-PBGA-B119	1	3.465 V	2.4 mm	100 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHTECTURE				22 mm	8 ns
MCM69P819ZP4	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel	3-STATE	256KX18	256K		0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	LINEAR/INTERLEAVED BURST SEQUENCE; INTERNALLY SELF-TIMED WRITE CYCLE; BYTE/GLOBAL WRITE CONTROL	e0	YES		22 mm	4 ns
MCM69F819ZP7.5R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm		4718592 bit	3.135 V	FLOW-THROUGH				22 mm	7.5 ns
MCM63F737ZP9R	NXP Semiconductors	CACHE SRAM		119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	370 mA	131072 words	COMMON	3.3		36	GRID ARRAY	BGA119,7X17,50		1.27 mm	70 Cel		128KX36	128K	3.125 V	0 Cel		BOTTOM	1	R-PBGA-B119		3.6 V	2.4 mm	75 MHz	14 mm		4718592 bit	3.135 V	FLOW THROUGH ARCHITECTURE		YES	.005 Amp	22 mm	9 ns
MCM63P837ZP200R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel		BOTTOM		R-PBGA-B119		3.465 V	2.4 mm	200 MHz	14 mm	Not Qualified	9437184 bit	3.135 V					22 mm	3 ns
MCM69F737TQ11R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	128KX36	128K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE	e0	YES		20 mm	11 ns
MCM69P737ZP3.5	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	425 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE			.045 Amp	22 mm	3.5 ns
MCM69F737TQ11	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel	3-STATE	128KX36	128K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE	e0	YES		20 mm	11 ns
MCM63P818ZP133	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE				22 mm	4 ns
MCM63F737KZP11	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE				22 mm	11 ns
MCM63P737KZP133R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE				22 mm	4 ns
MCM69F819ZP7.5	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm		4718592 bit	3.135 V	FLOW-THROUGH				22 mm	7.5 ns
MCM63F819KTQ9	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel		256KX18	256K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE				20 mm	9 ns
MCM69F819TQ8.5R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel		256KX18	256K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm		4718592 bit	3.135 V	FLOW-THROUGH				20 mm	8.5 ns
MCM63P737KZP133	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE				22 mm	4 ns
MCM63P819KZP150R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE				22 mm	3.8 ns
MCM69F618CTQ8R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel		64KX18	64K		0 Cel	TIN LEAD	QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V		e0			20 mm	8 ns
MCM67Q909ZP10	NXP Semiconductors	CACHE SRAM	COMMERCIAL	86	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		5		9	GRID ARRAY			1.524 mm	70 Cel		512KX9	512K		0 Cel		BOTTOM		R-PBGA-B86		5.25 V	2.44 mm		16.26 mm		4718592 bit	4.75 V					17.78 mm	5 ns
MCM69P536CTQ4.5	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		32KX36	32K		0 Cel		QUAD		R-PQFP-G100		3.6 V	1.6 mm		14 mm		1179648 bit	3.135 V					20 mm	4.5 ns
MCM63F837ZP7	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel		BOTTOM		R-PBGA-B119	1	3.465 V	2.4 mm	117 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHTECTURE				22 mm	7 ns
MCM69F536CTQ12R	NXP Semiconductors	CACHE SRAM	OTHER	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	GULL WING	PARALLEL	SYNCHRONOUS	300 mA	32768 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	110 Cel	3-STATE	32KX36	32K	3.14 V	20 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V	SELF TIMED WRITE CYCLE; BYTE WRITE CONTROL	e0	YES	.045 Amp	20 mm	12 ns
MCM69F536CTQ12	NXP Semiconductors	CACHE SRAM	OTHER	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	BICMOS	GULL WING	PARALLEL	SYNCHRONOUS	300 mA	32768 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	110 Cel	3-STATE	32KX36	32K	3.14 V	20 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.6 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.135 V	SELF TIMED WRITE CYCLE; BYTE WRITE CONTROL	e0	YES	.045 Amp	20 mm	12 ns
MCM63P736ZP100	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE				22 mm	5 ns
MCM63P819KTQ166	NXP Semiconductors	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel		256KX18	256K		0 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE				20 mm	3.5 ns
MCM63F737KZP8.5R	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel		BOTTOM		R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE				22 mm	8.5 ns
MCM69F737ZP8.5	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel	3-STATE	128KX36	128K		0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B119		3.6 V	2.4 mm		14 mm	Not Qualified	4718592 bit	3.135 V	OPTIONAL INTERLEAVED OR LINEAR BURST; BYTE WRITE CONTROL; SELF TIMED WRITE CYCLE	e0	YES		22 mm	8.5 ns
MCM63P837ZP225	NXP Semiconductors	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel		BOTTOM		R-PBGA-B119		3.465 V	2.4 mm	225 MHz	14 mm	Not Qualified	9437184 bit	3.135 V					22 mm	2.6 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.