CACHE SRAM SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
HM62W16101H-12	Renesas Electronics	CACHE SRAM	COMMERCIAL						1	CMOS		PARALLEL	ASYNCHRONOUS		1048576 words		3.3		16						70 Cel		1MX16	1M		0 Cel						3.6 V				Not Qualified	16777216 bit	3 V								12 ns
HM62A168CP-25R	Renesas Electronics	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words		5		16	CHIP CARRIER				1.27 mm	70 Cel		8KX16	8K		0 Cel		QUAD		S-PQCC-J52		5.25 V	4.57 mm		19.1262 mm	Not Qualified	131072 bit	4.75 V	ADDRESS LATCH						19.1262 mm	25 ns
IDT71V67903S80BG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	210 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	100 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	20	225		.05 Amp	22 mm	8 ns
IDT71V632S7PFG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	160 mA	65536 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	64KX32	64K	3.14 V	0 Cel	Matte Tin (Sn) - annealed	QUAD	1	R-PQFP-G100	3	3.63 V	1.6 mm	66 MHz	14 mm	Not Qualified	2097152 bit	3.135 V	ALSO REQUIRES 3.3V I/O SUPPLY	e3	30	260	YES	.015 Amp	20 mm	7 ns
71V67703S85BQ	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	190 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	87 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	30	225		.05 Amp	15 mm	8.5 ns
IDT71V3578133PF	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE				.65 mm	70 Cel		256KX18	256K		0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V		e0					20 mm	4.2 ns
IDT71V67703S75BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	265 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	117 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260		.05 Amp	22 mm	7.5 ns
71V35761SA200BQG	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.465 V		200 MHz		Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.03 Amp		3.1 ns
71V3576S150PFG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	295 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	150 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260		.03 Amp	20 mm	3.8 ns
IDT71V67803Z133BQGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		512KX18	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1					15 mm	4.2 ns
71V25761S200PFG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	360 mA	131072 words	COMMON	3.3	2.5,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	Matte Tin (Sn) - annealed	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	200 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260		.03 Amp	20 mm	3.1 ns
IDT71F632S66PF	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	55 mA	65536 words	COMMON	3.3	3.3,5	32	FLATPACK, LOW PROFILE	QFP100,.55X.8		Other Memory ICs	.65 mm	70 Cel	3-STATE	64KX32	64K		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	2097152 bit	3.135 V		e0			YES	.0001 Amp	20 mm	7 ns
IDT71V256SA12PZGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	SMALL OUTLINE, THIN PROFILE				.55 mm	85 Cel		32KX8	32K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G28	3	3.6 V	1.2 mm		8 mm	Not Qualified	262144 bit	3 V		e3					11.8 mm	12 ns
71V25761YSA183BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	340 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	183 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.03 Amp	22 mm	3.3 ns
IDT71V25761S200PFG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE				.65 mm	70 Cel		128KX36	128K		0 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3					20 mm	3.1 ns
IDT71V3559S85BGGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	235 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	90 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260		.045 Amp	22 mm	8.5 ns
71V6770380PFGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK					85 Cel		256KX36	256K		-40 Cel		QUAD		R-PQFP-G100		3.465 V					9437184 bit	3.135 V	FLOW THROUGH ARCHITECTURE							8 ns
IDT71V67803S150BQGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		512KX18	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1					15 mm	3.8 ns
HM6287P-70	Renesas Electronics	CACHE SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		65536 words		5		1	IN-LINE				2.54 mm	70 Cel		64KX1	64K		0 Cel		DUAL		R-PDIP-T22		5.5 V	5.08 mm		7.62 mm	Not Qualified	65536 bit	4.5 V							27.08 mm	70 ns
HM628511HLJP-15	Renesas Electronics	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	190 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44		SRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-J36		5.5 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0				.0003 Amp	23.25 mm	15 ns
IDT71V67602S150BQG	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY, THIN PROFILE				1 mm	70 Cel		256KX36	256K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1					15 mm	3.8 ns
IDT71V3577S75BQ	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	255 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	117 MHz	13 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	30	225		.03 Amp	15 mm	7.5 ns
IDT71V3579S75PFG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	255 mA	262144 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	Matte Tin (Sn) - annealed	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	117 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e3	30	260		.03 Amp	20 mm	7.5 ns
71V632ZS7PFG71V632ZS7	Renesas Electronics	CACHE SRAM		100		RECTANGULAR	PLASTIC/EPOXY	YES			GULL WING									FLATPACK												QUAD		R-PQFP-G100
71V67903S80BQ8	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	210 mA	524288 words	COMMON	3.3	3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	100 MHz	13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	NOT SPECIFIED	225		.05 Amp	15 mm	8 ns
IDT71V35761S166PFG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE				.65 mm	70 Cel		128KX36	128K		0 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3					20 mm	3.5 ns
HM62G36256BP-4	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	262144 words	COMMON	3.3	1.5,3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		3.63 V	2.35 mm		14 mm	Not Qualified	9437184 bit	3.135 V	LATE WRITE	e1				.1 Amp	22 mm	2.1 ns
71V3577S85BQGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	190 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	87 MHz	13 mm	Not Qualified	4718592 bit	3.135 V	FLOW THROUGH ARCHITECTURE	e1	30	260		.035 Amp	15 mm	8.5 ns
IDT71V3557S80BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	250 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	95 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260		.04 Amp	22 mm	8 ns
IDT71V632S6PFGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	180 mA	65536 words	COMMON	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	64KX32	64K	3.14 V	-40 Cel	Matte Tin (Sn) - annealed	QUAD		R-PQFP-G100	3	3.63 V	1.6 mm	83 MHz	14 mm	Not Qualified	2097152 bit	3.135 V	ALSO REQUIRES 3.3V I/O SUPPLY	e3	30	260		.015 Amp	20 mm	6 ns
71V67603166BGG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY				1.27 mm	70 Cel		256KX36	256K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1					22 mm	3.5 ns
HM62G36256BP-5	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY				1.27 mm	70 Cel		256KX36	256K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119		3.63 V	2.35 mm		14 mm	Not Qualified	9437184 bit	3.135 V	LATE WRITE	e1					22 mm	2.5 ns
71V3576SA150PFGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	QFF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	FLAT	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK					85 Cel		128KX36	128K		-40 Cel	MATTE TIN	QUAD		R-PQFP-F100	3	3.465 V			14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3					20 mm	3.8 ns
HM624256P-45	Renesas Electronics	CACHE SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		4	IN-LINE				2.54 mm	70 Cel		256KX4	256K		0 Cel		DUAL		R-PDIP-T28		5.5 V	5.08 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V							34.7 mm	45 ns
IDT71V67703S75BQG	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY, THIN PROFILE				1 mm	70 Cel		256KX36	256K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1					15 mm	7.5 ns
IDT71V3559S80BQGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	260 mA	262144 words	COMMON	3.3	3.3	18	GRID ARRAY, THIN PROFILE	BGA165,11X15,40		SRAMs	1 mm	85 Cel	3-STATE	256KX18	256K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	95 MHz	13 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260		.045 Amp	15 mm	8 ns
71V67703S80PFG	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	210 mA	262144 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	Matte Tin (Sn) - annealed	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	100 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e3	30	260		.05 Amp	20 mm	8 ns
71V25761YSA183BGGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	2.5,3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	183 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e1	30	260		.035 Amp	22 mm	3.3 ns
71V3578S150PFG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	295 mA	262144 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	3-STATE	256KX18	256K	3.14 V	0 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	150 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260		.03 Amp	20 mm	3.8 ns
HM62W8201HJP-10	Renesas Electronics	CACHE SRAM	COMMERCIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		2097152 words		3.3		8	SMALL OUTLINE				1.27 mm	70 Cel		2MX8	2M		0 Cel		DUAL		R-PDSO-J36		3.6 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	3 V							23.25 mm	10 ns
IDT71V67603S150BG8	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	305 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	150 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225		.05 Amp	22 mm	3.8 ns
IDT71V632ZSA4PF	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words		3.3		32	FLATPACK, LOW PROFILE				.65 mm	70 Cel		64KX32	64K		0 Cel	TIN LEAD	QUAD		R-PQFP-G100	3	3.63 V	1.6 mm		14 mm	Not Qualified	2097152 bit	3.135 V	PIPELINED ARCHITECTURE	e0					20 mm
71V3559SA85PFG	Renesas Electronics	CACHE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE		18		.65 mm	70 Cel		256KX18	256K		0 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm		14 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECHTURE	e3					20 mm	8.5 ns
71V6790375BGGI8	Renesas Electronics	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY					85 Cel		512KX18	512K		-40 Cel		BOTTOM		R-PBGA-B119		3.465 V					9437184 bit	3.135 V	FLOW THROUGH ARCHITECTURE							7.5 ns
IDT71V25761YS183PFI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	2.5,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	3-STATE	128KX36	128K	3.14 V	-40 Cel	TIN LEAD	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	183 MHz	14 mm	Not Qualified	4718592 bit	3.135 V	PIPELINED ARCHITECTURE	e0	20	225		.035 Amp	20 mm	3.3 ns
IDT71V3557S75BQG	Renesas Electronics	CACHE SRAM	COMMERCIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	275 mA	131072 words	COMMON	3.3	3.3	36	GRID ARRAY, THIN PROFILE	BGA165,11X15,40		SRAMs	1 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm	100 MHz	13 mm	Not Qualified	4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e1	30	260		.04 Amp	15 mm	7.5 ns
71V67803Z133BQGI	Renesas Electronics	CACHE SRAM	INDUSTRIAL	165	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		512KX18	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	3.465 V	1.2 mm		13 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e1					15 mm	4.2 ns
IDT71V67703S85BG	Renesas Electronics	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	190 mA	262144 words	COMMON	3.3	3.3	36	GRID ARRAY	BGA119,7X17,50		SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	Tin/Lead (Sn63Pb37)	BOTTOM		R-PBGA-B119	3	3.465 V	2.36 mm	87 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0	20	225		.05 Amp	22 mm	8.5 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.