CONTENT ADDRESSABLE SRAM SRAM 40

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
TMS4000NC	Texas Instruments	CONTENT ADDRESSABLE SRAM	OTHER	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE				16 words			8	IN-LINE	DIP40,.6		SRAMs	2.54 mm	85 Cel	16X8	16	-25 Cel		DUAL	R-PDIP-T40					Not Qualified
TMS4000JC	Texas Instruments	CONTENT ADDRESSABLE SRAM	OTHER	40	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				16 words			8	IN-LINE	DIP40,.6		SRAMs	2.54 mm	85 Cel	16X8	16	-25 Cel		DUAL	R-XDIP-T40					Not Qualified
SCM69C233TQ15	NXP Semiconductors	CONTENT ADDRESSABLE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		4096 words	3.3		64	FLATPACK, LOW PROFILE				.65 mm	85 Cel	4KX64	4K	-40 Cel		QUAD	R-PQFP-G100		3.5 V	1.6 mm	16 mm		262144 bit	3.1 V						20 mm	210 ns
SCM69C233TQ15R	NXP Semiconductors	CONTENT ADDRESSABLE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		4096 words	3.3		64	FLATPACK, LOW PROFILE				.65 mm	85 Cel	4KX64	4K	-40 Cel		QUAD	R-PQFP-G100		3.5 V	1.6 mm	16 mm		262144 bit	3.1 V						20 mm	210 ns
SCM69C232TQ20R	NXP Semiconductors	CONTENT ADDRESSABLE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		4096 words	3.3		64	FLATPACK, LOW PROFILE				.65 mm	85 Cel	4KX64	4K	-40 Cel		QUAD	R-PQFP-G100		3.5 V	1.6 mm	14 mm		262144 bit	3.1 V						20 mm	9 ns
SCM69C432TQ20	NXP Semiconductors	CONTENT ADDRESSABLE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words	3.3		16	FLATPACK, LOW PROFILE				.65 mm	85 Cel	64KX16	64K	-40 Cel		QUAD	R-PQFP-G100		3.5 V	1.6 mm	14 mm		1048576 bit	3.1 V						20 mm	8 ns
SCM69C232TQ20	NXP Semiconductors	CONTENT ADDRESSABLE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		4096 words	3.3		64	FLATPACK, LOW PROFILE				.65 mm	85 Cel	4KX64	4K	-40 Cel		QUAD	R-PQFP-G100		3.5 V	1.6 mm	14 mm		262144 bit	3.1 V						20 mm	9 ns
SCM69C433TQ15R	NXP Semiconductors	CONTENT ADDRESSABLE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		16384 words	3.3		64	FLATPACK, LOW PROFILE				.65 mm	85 Cel	16KX64	16K	-40 Cel		QUAD	R-PQFP-G100		3.5 V	1.6 mm	14 mm		1048576 bit	3.1 V						20 mm	8 ns
SCM69C433TQ15	NXP Semiconductors	CONTENT ADDRESSABLE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		16384 words	3.3		64	FLATPACK, LOW PROFILE				.65 mm	85 Cel	16KX64	16K	-40 Cel		QUAD	R-PQFP-G100		3.5 V	1.6 mm	14 mm		1048576 bit	3.1 V						20 mm	8 ns
SCM69C432TQ20R	NXP Semiconductors	CONTENT ADDRESSABLE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words	3.3		16	FLATPACK, LOW PROFILE				.65 mm	85 Cel	64KX16	64K	-40 Cel		QUAD	R-PQFP-G100		3.5 V	1.6 mm	14 mm		1048576 bit	3.1 V						20 mm	8 ns
MCM69C232TQ20	NXP Semiconductors	CONTENT ADDRESSABLE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		4096 words	3.3		64	FLATPACK, LOW PROFILE				.65 mm	70 Cel	4KX64	4K	0 Cel		QUAD	R-PQFP-G100		3.5 V	1.6 mm	14 mm		262144 bit	3.1 V						20 mm	9 ns
MCM69C233TQ15R	NXP Semiconductors	CONTENT ADDRESSABLE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		4096 words	3.3		64	FLATPACK, LOW PROFILE				.65 mm	70 Cel	4KX64	4K	0 Cel		QUAD	R-PQFP-G100		3.5 V	1.6 mm	16 mm		262144 bit	3.1 V						20 mm	210 ns
MCM69C232TQ20R	NXP Semiconductors	CONTENT ADDRESSABLE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		4096 words	3.3		64	FLATPACK, LOW PROFILE				.65 mm	70 Cel	4KX64	4K	0 Cel		QUAD	R-PQFP-G100		3.5 V	1.6 mm	14 mm		262144 bit	3.1 V						20 mm	9 ns
MCM69C432TQ20	NXP Semiconductors	CONTENT ADDRESSABLE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words	3.3		16	FLATPACK, LOW PROFILE				.65 mm	70 Cel	64KX16	64K	0 Cel		QUAD	R-PQFP-G100		3.5 V	1.6 mm	14 mm		1048576 bit	3.1 V						20 mm	8 ns
MCM69C233TQ15	NXP Semiconductors	CONTENT ADDRESSABLE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		4096 words	3.3		64	FLATPACK, LOW PROFILE				.65 mm	70 Cel	4KX64	4K	0 Cel		QUAD	R-PQFP-G100		3.5 V	1.6 mm	16 mm		262144 bit	3.1 V						20 mm	210 ns
MCM69C433TQ15	NXP Semiconductors	CONTENT ADDRESSABLE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		16384 words	3.3		64	FLATPACK, LOW PROFILE				.65 mm	70 Cel	16KX64	16K	0 Cel		QUAD	R-PQFP-G100		3.5 V	1.6 mm	14 mm		1048576 bit	3.1 V						20 mm	8 ns
MCM69C433TQ15R	NXP Semiconductors	CONTENT ADDRESSABLE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		16384 words	3.3		64	FLATPACK, LOW PROFILE				.65 mm	70 Cel	16KX64	16K	0 Cel		QUAD	R-PQFP-G100		3.5 V	1.6 mm	14 mm		1048576 bit	3.1 V						20 mm	8 ns
MCM69C432TQ20R	NXP Semiconductors	CONTENT ADDRESSABLE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		65536 words	3.3		16	FLATPACK, LOW PROFILE				.65 mm	70 Cel	64KX16	64K	0 Cel		QUAD	R-PQFP-G100		3.5 V	1.6 mm	14 mm		1048576 bit	3.1 V						20 mm	8 ns
UPD98421F1-GA5-A	Renesas Electronics	CONTENT ADDRESSABLE SRAM	COMMERCIAL	240	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	MOS	BALL	PARALLEL	SYNCHRONOUS	1150 mA	8192 words	3.3	3.3	64	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA240,18X18,32		SRAMs	.8 mm	70 Cel	8KX64	8K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B240		3.45 V	1.38 mm	16 mm	Not Qualified	524288 bit	3.15 V		e1				16 mm	10 ns
UPD98421F1-GA5	Renesas Electronics	CONTENT ADDRESSABLE SRAM	COMMERCIAL	240	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	MOS	BALL	PARALLEL	SYNCHRONOUS	1150 mA	8192 words	3.3	3.3	64	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA240,18X18,32		SRAMs	.8 mm	70 Cel	8KX64	8K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B240		3.45 V	1.38 mm	16 mm	Not Qualified	524288 bit	3.15 V		e0				16 mm	10 ns
UPD98421F1-GA1-A	Renesas Electronics	CONTENT ADDRESSABLE SRAM	COMMERCIAL	240	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	MOS	BALL	PARALLEL	SYNCHRONOUS		8192 words	3.3		64	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	70 Cel	8KX64	8K	0 Cel		BOTTOM	S-PBGA-B240	3	3.45 V	1.46 mm	16 mm	Not Qualified	524288 bit	3.15 V			10	260		16 mm
MT75W16Y136HBB-66	Micron Technology	CONTENT ADDRESSABLE SRAM	COMMERCIAL	272	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8192 words	1.8	1.8,3.3	272	GRID ARRAY	BGA272,20X20,50	136	SRAMs	1.27 mm	70 Cel	8KX272	8K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B272		1.9 V	2.46 mm	27 mm	Not Qualified	2228224 bit	1.7 V	PIPELINED ARCHITECTURE; ALSO CONFIGURABLE AS 32K X 68	e0				27 mm
MT75L4L32MLQ-90IT	Micron Technology	CONTENT ADDRESSABLE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	4096 words	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	4KX32	4K	-40 Cel	TIN LEAD	QUAD	R-PQFP-G100		3.6 V	1.6 mm	14 mm	Not Qualified	131072 bit	3 V	PIPELINED ARCHITECTURE	e0			.005 Amp	20 mm
MT75L8L32MLQ-70	Micron Technology	CONTENT ADDRESSABLE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	8192 words	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	8KX32	8K	0 Cel	TIN LEAD	QUAD	R-PQFP-G100		3.6 V	1.6 mm	14 mm	Not Qualified	262144 bit	3 V	PIPELINED ARCHITECTURE	e0			.005 Amp	20 mm
MT75L8L32MLQ-50IT	Micron Technology	CONTENT ADDRESSABLE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	450 mA	8192 words	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	8KX32	8K	-40 Cel	TIN LEAD	QUAD	R-PQFP-G100		3.6 V	1.6 mm	14 mm	Not Qualified	262144 bit	3 V	PIPELINED ARCHITECTURE	e0			.005 Amp	20 mm
MT75L4L32MLQ-50	Micron Technology	CONTENT ADDRESSABLE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	4096 words	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	4KX32	4K	0 Cel	TIN LEAD	QUAD	R-PQFP-G100		3.6 V	1.6 mm	14 mm	Not Qualified	131072 bit	3 V	PIPELINED ARCHITECTURE	e0			.005 Amp	20 mm
MT75L8L32MLQ-70IT	Micron Technology	CONTENT ADDRESSABLE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	8192 words	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	8KX32	8K	-40 Cel	TIN LEAD	QUAD	R-PQFP-G100		3.6 V	1.6 mm	14 mm	Not Qualified	262144 bit	3 V	PIPELINED ARCHITECTURE	e0			.005 Amp	20 mm
MT75W8Y136HBB-66	Micron Technology	CONTENT ADDRESSABLE SRAM	COMMERCIAL	272	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4096 words	1.8	1.8,3.3	272	GRID ARRAY	BGA272,20X20,50	136	SRAMs	1.27 mm	70 Cel	4KX272	4K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B272		1.9 V	2.46 mm	27 mm	Not Qualified	1114112 bit	1.7 V	PIPIELINED ARCHITECTURE; ALSO CONFIGURABLE AS 16K X 68	e1				27 mm
MT75W8Y136HBB-83	Micron Technology	CONTENT ADDRESSABLE SRAM	COMMERCIAL	272	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4096 words	1.8	1.8,3.3	272	GRID ARRAY	BGA272,20X20,50	136	SRAMs	1.27 mm	70 Cel	4KX272	4K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B272		1.9 V	2.46 mm	27 mm	Not Qualified	1114112 bit	1.7 V	PIPIELINED ARCHITECTURE; ALSO CONFIGURABLE AS 16K X 68	e1				27 mm
MT75W8Y136HBB-100	Micron Technology	CONTENT ADDRESSABLE SRAM	COMMERCIAL	272	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4096 words	1.8	1.8,3.3	272	GRID ARRAY	BGA272,20X20,50	136	SRAMs	1.27 mm	70 Cel	4KX272	4K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B272		1.9 V	2.46 mm	27 mm	Not Qualified	1114112 bit	1.7 V	PIPIELINED ARCHITECTURE; ALSO CONFIGURABLE AS 16K X 68	e1				27 mm
MT75W16Y136HBB-100	Micron Technology	CONTENT ADDRESSABLE SRAM	COMMERCIAL	272	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8192 words	1.8	1.8,3.3	272	GRID ARRAY	BGA272,20X20,50	136	SRAMs	1.27 mm	70 Cel	8KX272	8K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B272		1.9 V	2.46 mm	27 mm	Not Qualified	2228224 bit	1.7 V	PIPELINED ARCHITECTURE; ALSO CONFIGURABLE AS 32K X 68	e0				27 mm
MT75L4L32MLQ-70	Micron Technology	CONTENT ADDRESSABLE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	4096 words	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	4KX32	4K	0 Cel	TIN LEAD	QUAD	R-PQFP-G100		3.6 V	1.6 mm	14 mm	Not Qualified	131072 bit	3 V	PIPELINED ARCHITECTURE	e0			.005 Amp	20 mm
MT75L8L32MLQ-40	Micron Technology	CONTENT ADDRESSABLE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	600 mA	8192 words	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	8KX32	8K	0 Cel	TIN LEAD	QUAD	R-PQFP-G100		3.6 V	1.6 mm	14 mm	Not Qualified	262144 bit	3 V	PIPELINED ARCHITECTURE	e0			.005 Amp	20 mm
MT75L4L32MLQ-90	Micron Technology	CONTENT ADDRESSABLE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	4096 words	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	4KX32	4K	0 Cel	TIN LEAD	QUAD	R-PQFP-G100		3.6 V	1.6 mm	14 mm	Not Qualified	131072 bit	3 V	PIPELINED ARCHITECTURE	e0			.005 Amp	20 mm
MT75L4L32MLQ-70IT	Micron Technology	CONTENT ADDRESSABLE SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	350 mA	4096 words	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel	4KX32	4K	-40 Cel	TIN LEAD	QUAD	R-PQFP-G100		3.6 V	1.6 mm	14 mm	Not Qualified	131072 bit	3 V	PIPELINED ARCHITECTURE	e0			.005 Amp	20 mm
MT75L8L32MLQ-90	Micron Technology	CONTENT ADDRESSABLE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	275 mA	8192 words	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	8KX32	8K	0 Cel	TIN LEAD	QUAD	R-PQFP-G100		3.6 V	1.6 mm	14 mm	Not Qualified	262144 bit	3 V	PIPELINED ARCHITECTURE	e0			.005 Amp	20 mm
MT75L8L32MLQ-40IT	Micron Technology	CONTENT ADDRESSABLE SRAM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES			GULL WING			600 mA	8192 words	3.3	3.3	64	FLATPACK	QFP100,.63X.87		SRAMs	.635 mm	85 Cel	8KX64	8K	-40 Cel	Tin/Lead (Sn/Pb)	QUAD	R-PQFP-G100					Not Qualified	524288 bit			e0			.005 Amp
MT75L8L32MLQ-50	Micron Technology	CONTENT ADDRESSABLE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	450 mA	4096 words	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	4KX32	4K	0 Cel	TIN LEAD	QUAD	R-PQFP-G100		3.6 V	1.6 mm	14 mm	Not Qualified	131072 bit	3 V	PIPELINED ARCHITECTURE	e0			.005 Amp	20 mm
MT75L8L32MLQ-35	Micron Technology	CONTENT ADDRESSABLE SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	650 mA	8192 words	3.3	3.3	32	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	70 Cel	8KX32	8K	0 Cel	TIN LEAD	QUAD	R-PQFP-G100		3.6 V	1.6 mm	14 mm	Not Qualified	262144 bit	3 V	PIPELINED ARCHITECTURE	e0			.005 Amp	20 mm
MT75W16Y136HBB-83	Micron Technology	CONTENT ADDRESSABLE SRAM	COMMERCIAL	272	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8192 words	1.8	1.8,3.3	272	GRID ARRAY	BGA272,20X20,50	136	SRAMs	1.27 mm	70 Cel	8KX272	8K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B272		1.9 V	2.46 mm	27 mm	Not Qualified	2228224 bit	1.7 V	PIPELINED ARCHITECTURE; ALSO CONFIGURABLE AS 32K X 68	e0				27 mm

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.