PSEUDO STATIC RAM SRAM 1,848

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
HM65W8512LFP-12	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words			3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-G32		3.6 V	3 mm	11.7 mm	Not Qualified	4194304 bit	3 V	WD-MAX						20.45 mm	120 ns
HM658512ALTT-7	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words			5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V							20.95 mm	70 ns
HM65256BLSP-10	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words			5		8	IN-LINE			2.54 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V	ACCESS TIME IN STATIC COLUMN MODE =50NS						36 mm	100 ns
HM65W8512DFP-12	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words			3.3		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-G32		3.6 V	3 mm		Not Qualified	4194304 bit	3 V							20.45 mm	120 ns
HM65256BP-15	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words			5		8	IN-LINE			2.54 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDIP-T28		5.5 V	5.7 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	ACCESS TIME IN STATIC COLUMN MODE =75NS						35.6 mm	150 ns
HM65V8512LRR-15V	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP2-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words			3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-G32		3.3 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V	CE/AUTO/SELF REFRESH						20.95 mm	150 ns
HM65256BLP-20T	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words			5		8	IN-LINE			2.54 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDIP-T28		5.5 V	5.7 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	CE/AUTO/SELF REFRESH						35.6 mm	200 ns
HM658128ALP-12L	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words			5		8	IN-LINE			2.54 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH						41.9 mm	120 ns
HM658512DRR-10	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP2-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words			5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	CE/AUTO REFRESH						20.95 mm	100 ns
HM65W8512DTT-15	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words			3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V							20.95 mm	150 ns
HM658512ALP-8V	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	SYNCHRONOUS		524288 words			5		8	IN-LINE			2.54 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V							41.9 mm	80 ns
HM65V8512LFP-12	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words			3		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-G32		3.3 V	3 mm		Not Qualified	4194304 bit	2.7 V	CE/AUTO/SELF REFRESH						20.45 mm	120 ns
HM658128ADP-8	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words			5		8	IN-LINE			2.54 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO REFRESH						41.9 mm	80 ns
HM65256BLP-20	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words			5		8	IN-LINE			2.54 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDIP-T28		5.5 V	5.7 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	ACCESS TIME IN STATIC COLUMN MODE =100NS						35.6 mm	200 ns
HM658512LP-12V	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words			5		8	IN-LINE			2.54 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	CE/AUTO/SELF REFRESH						41.9 mm	120 ns
HM658128ALFP-12	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDSO-G32		5.5 V	3 mm	11.3 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH						20.45 mm	120 ns
HM658128ADR-10	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO REFRESH						18.4 mm	100 ns
HM65256BP-20	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words			5		8	IN-LINE			2.54 mm	70 Cel		32KX8	32K		0 Cel		DUAL		R-PDIP-T28		5.5 V	5.7 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	ACCESS TIME IN STATIC COLUMN MODE =100NS						35.6 mm	200 ns
HM658512ALTT-8V	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words			5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V							20.95 mm	80 ns
HM658512ALRR-7	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words			5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V							20.95 mm	70 ns
HM658512ALTT-10V	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words			5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V							20.95 mm	100 ns
HM658128ALR-12L	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH						18.4 mm	120 ns
HM658512ALP-7V	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words			5		8	IN-LINE			2.54 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V							41.9 mm	70 ns
HM658128ADP-10	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words			5		8	IN-LINE			2.54 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO REFRESH						41.9 mm	100 ns
HM658512LFP-12V	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-G32		5.5 V	3 mm		Not Qualified	4194304 bit	4.5 V	CE/AUTO/SELF REFRESH						20.45 mm	120 ns
HM65W8512LTT-12V	Renesas Electronics	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words			3.3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V							20.95 mm	120 ns
KM658128ALG-12L	Samsung	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0001 Amp	20.47 mm	120 ns
K1S1616B9B-FI700	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words			1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B48		1.95 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V							7 mm	70 ns
K1S3216BCD-FI700	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words		COMMON	1.85	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM		R-PBGA-B48		2 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V			30	240		.0001 Amp	8 mm	70 ns
KM658128LDSG-10L	Samsung	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.5	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm	8.38 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00006 Amp	20.47 mm	100 ns
K1S64161CC-BI700	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	4194304 words		COMMON	2.9	2.9	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel		BOTTOM		R-PBGA-B48		3.1 V	1 mm	6 mm	Not Qualified	67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		.00018 Amp	8 mm	70 ns
KM658128ALP-12L	Samsung	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		COMMON	5	5	8	IN-LINE	DIP32,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0001 Amp	41.91 mm	120 ns
KM658512LT-8	Samsung	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	YES	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	Other Memory ICs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	AUTO/SELF REFRESH	e0			YES			80 ns
KM658512LR-8L	Samsung	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP2-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words			5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL	1	R-PDSO-G32		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	AUTO/SELF REFRESH				YES			80 ns
KM658128ALG-8	Samsung	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0002 Amp	20.47 mm	80 ns
KM658128P-8L	Samsung	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words			5		8	IN-LINE			2.54 mm	70 Cel		128KX8	128K		0 Cel		DUAL	1	R-PDIP-T32		5.5 V	3.93 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH				YES		42.035 mm	80 ns
KM658128G-10L	Samsung	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel		128KX8	128K		0 Cel		DUAL	1	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH				YES		20.47 mm	100 ns
K1S3216BCD-FI70	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	2097152 words		COMMON	1.85	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM		R-PBGA-B48	1	2 V	1 mm	6 mm	Not Qualified	33554432 bit	1.7 V						.0001 Amp	8 mm	70 ns
K1S28161CM-I0000	Samsung	PSEUDO STATIC RAM	INDUSTRIAL						1	CMOS		PARALLEL	ASYNCHRONOUS		8388608 words			2.9		16					85 Cel		8MX16	8M		-40 Cel						3.1 V			Not Qualified	134217728 bit	2.7 V								70 ns
KM658128SG-12	Samsung	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.5	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm	8.38 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.001 Amp	20.47 mm	120 ns
K1S1616B1A-BI700	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words			1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	2	2.1 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V		e1					7 mm	70 ns
KM658512LG-10	Samsung	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	YES	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	Other Memory ICs	1.27 mm	70 Cel	3-STATE	512KX8	512K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	4194304 bit	4.5 V	AUTO/SELF REFRESH	e0			YES		20.47 mm	100 ns
KM658512LR-12L	Samsung	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP2-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words			5		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel		512KX8	512K		0 Cel		DUAL	1	R-PDSO-G32		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	AUTO/SELF REFRESH				YES			120 ns
KM658512P-10	Samsung	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words	YES	COMMON	5	5	8	IN-LINE	DIP32,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	512KX8	512K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			YES		41.91 mm	100 ns
KM658128G-8L	Samsung	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel		128KX8	128K		0 Cel		DUAL	1	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH				YES		20.47 mm	80 ns
K1S1616BCA-BI850	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words			1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		1MX16	1M		-40 Cel		BOTTOM		R-PBGA-B48		2.1 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V							8 mm	85 ns
K1S1616B1M-EI85	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	1048576 words		COMMON	1.8	1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.7 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		2.2 V	1 mm	6 mm	Not Qualified	16777216 bit	1.7 V		e0					7 mm	85 ns
K1B6416B2D-FI700	Samsung	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	4194304 words		COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel		BOTTOM		R-PBGA-B54	1	1.95 V	1 mm	6 mm	Not Qualified	67108864 bit	1.7 V						.00012 Amp	8 mm	70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.