PSEUDO STATIC RAM SRAM 1,848

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IS66WVE4M16EBLL-70BLI	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	4194304 words	COMMON			16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	85 Cel	NO	3-STATE	4MX16	4M	2.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm		6 mm		67108864 bit	2.7 V		e1		260	NO	.00015 Amp	8 mm	70 ns
IS66WVE4M16EALL-70BLI	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	4194304 words	COMMON			16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	85 Cel	NO	3-STATE	4MX16	4M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	1.95 V	1.2 mm		6 mm		67108864 bit	1.7 V		e1		260	NO	.00015 Amp	8 mm	70 ns
S80KS5123GABHA020	Infineon Technologies	PSEUDO STATIC RAM																													TIN SILVER COPPER				3									e1
IS66WVH8M8ALL-166B1LI	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.8		8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel			8MX8	8M		-40 Cel		BOTTOM		R-PBGA-B24		1.95 V	1.2 mm		6 mm		67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
IS66WVH8M8BLL-100B1LI	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	8388608 words	COMMON	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel			8MX8	8M	2.7 V	-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm	100 MHz	6 mm		67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NO	.00002 Amp	8 mm	40 ns
MT45W8MW16BGX-701IT	Micron Technology	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	35 mA	8388608 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	8MX16	8M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54		1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V		e1		260	YES	.0002 Amp	10 mm	70 ns
W967D6HBGX7I	Winbond Electronics	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	45 mA	8388608 words	COMMON	1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30		.75 mm	85 Cel		3-STATE	8MX16	8M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B54		1.95 V	1 mm		6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	YES	.00025 Amp	8 mm	70 ns
IS66WVE4M16EALL-70BLI-TR	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4194304 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel			4MX16	4M		-40 Cel		BOTTOM		R-PBGA-B48		1.95 V	1.2 mm		6 mm		67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	70 ns
APS1604M-3SQR-SN	Ap Memory Technology	PSEUDO STATIC RAM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	7 mA	2097152 words		3.3		8	SMALL OUTLINE	SOP8,.25		1.27 mm	85 Cel			2MX8	2M		-40 Cel		DUAL		R-PDSO-G8		3.6 V	1.75 mm	133 MHz	3.9 mm		16777216 bit	2.7 V					NO	.00015 Amp	4.9 mm
W968D6DAGX7I	Winbond Electronics	PSEUDO STATIC RAM	INDUSTRIAL	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	16777216 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	16MX16	16M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	268435456 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	YES	.0004 Amp	8 mm	70 ns
IS66WVH8M8ALL-166B1LI-TR	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.8		8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel			8MX8	8M		-40 Cel		BOTTOM		R-PBGA-B24		1.95 V	1.2 mm		6 mm		67108864 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	36 ns
IS66WVH8M8BLL-100B1LI-TR	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		8388608 words		3		8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel			8MX8	8M		-40 Cel		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		6 mm		67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	40 ns
IS66WVH8M8DALL-200B1LI	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	40 mA	8388608 words	COMMON	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel		3-STATE	8MX8	8M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B24		1.95 V	1.2 mm	200 MHz	6 mm		67108864 bit	1.7 V				260	NO	.00004 Amp	8 mm
IS66WVE4M16TBLL-70BLI	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	4194304 words	COMMON			16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	85 Cel	NO	3-STATE	4MX16	4M	2.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48		3.6 V	1.2 mm		6 mm		67108864 bit	2.7 V		e1	10	260	NO	.00015 Amp	8 mm	70 ns
IS66WVH32M8DALL-166B1LI-TR	Integrated Silicon Solution	PSEUDO STATIC RAM
IS66WV51216EBLL-70TLI	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			512KX16	512K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm		8388608 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED			18.41 mm	70 ns
IS66WV51216EBLL-70TLI-TR	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			512KX16	512K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm		8388608 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED			18.41 mm	70 ns
IS66WVE4M16EBLL-70BLI-TR	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4194304 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	85 Cel			4MX16	4M		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		6 mm		67108864 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	70 ns
IS66WVH32M8DALL-166B1LI	Integrated Silicon Solution	PSEUDO STATIC RAM																																											NOT SPECIFIED	260
APS1604M-3SQR-ZR	Ap Memory Technology	PSEUDO STATIC RAM		8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	7 mA	2097152 words		3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		.5 mm	85 Cel			2MX8	2M		-40 Cel		DUAL		R-XDSO-N8		3.6 V	.5 mm	133 MHz	2 mm		16777216 bit	2.7 V					NO	.00015 Amp	3 mm
CS26LV64173HCP70	Chiplus Semiconductor	PSEUDO STATIC RAM	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		4194304 words				16	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	70 Cel			4MX16	4M		0 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		6 mm		67108864 bit	2.7 V							8 mm	70 ns
IS66WVH16M8ALL-166B1LI	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	60 mA	16777216 words	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	Other Memory ICs	1 mm	85 Cel		3-STATE	16MX8	16M		-40 Cel		BOTTOM		R-PBGA-B24		1.95 V	1.2 mm		6 mm	Not Qualified	134217728 bit	1.7 V						.00002 Amp	8 mm	36 ns
IS66WVH16M8ALL-166B1LI-TR	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		16777216 words		1.8		8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel			16MX8	16M		-40 Cel		BOTTOM		R-PBGA-B24		1.95 V	1.2 mm		6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm
IS66WV51216EBLL-55TLI	Integrated Silicon Solution	PSEUDO STATIC RAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			512KX16	512K		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm		8388608 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED			18.41 mm	55 ns
MT45W8MW16BGX-708WTTR	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		8388608 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			8MX16	8M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V		e1		260			10 mm	70 ns
MT45W4MW16BCGB-708LWT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	30 mA	4194304 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	4MX16	4M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V		e1				.00012 Amp	8 mm	70 ns
MT45W8MW16BGX-856WT	Micron Technology	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	8388608 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	8MX16	8M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm		8 mm	Not Qualified	134217728 bit	1.7 V		e1		260		.0002 Amp	10 mm	85 ns
M69KB128AA70DW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	8388608 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	Other Memory ICs		85 Cel		3-STATE	8MX16	8M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	134217728 bit	1.7 V						.0002 Amp		70 ns
M69KB128AA70CW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	8388608 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	Other Memory ICs		85 Cel		3-STATE	8MX16	8M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	134217728 bit	1.7 V						.0002 Amp		70 ns
M69KB128AA85DW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	8388608 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	Other Memory ICs		85 Cel		3-STATE	8MX16	8M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	134217728 bit	1.7 V						.0002 Amp		85 ns
M69KB128ABCW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	35 mA	8388608 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	Other Memory ICs		85 Cel		3-STATE	8MX16	8M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	134217728 bit	1.7 V						.00001 Amp		70 ns
M69KB048BD70ZA8F	STMicroelectronics	PSEUDO STATIC RAM	OTHER	71	TFBGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			2MX16	2M		-30 Cel		BOTTOM		R-XBGA-B71		1.95 V	1.2 mm		7 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE		40	260			11 mm	70 ns
M69KB128ABDW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	35 mA	8388608 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	Other Memory ICs		85 Cel		3-STATE	8MX16	8M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	134217728 bit	1.7 V						.00001 Amp		70 ns
M69KB048BD70ZA8T	STMicroelectronics	PSEUDO STATIC RAM	OTHER	71	TFBGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			2MX16	2M		-30 Cel	TIN LEAD	BOTTOM		R-XBGA-B71		1.95 V	1.2 mm		7 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE	e0					11 mm	70 ns
M69AB048BD70ZA8F	STMicroelectronics	PSEUDO STATIC RAM	OTHER	71	TFBGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA71,8X12,32	Other Memory ICs	.8 mm	85 Cel		3-STATE	2MX16	2M		-30 Cel		BOTTOM		R-XBGA-B71		1.95 V	1.2 mm		7 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE		40	260		.00001 Amp	11 mm	70 ns
M69KB096AB70CW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	Other Memory ICs		85 Cel		3-STATE	4MX16	4M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	67108864 bit	1.7 V						.00001 Amp		70 ns
M69KB096AA70CW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	Other Memory ICs		85 Cel		3-STATE	4MX16	4M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	67108864 bit	1.7 V						.00012 Amp		70 ns
M69AW024BE60ZB8F	STMicroelectronics	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	1048576 words	COMMON	3	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel		3-STATE	1MX16	1M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48		3.3 V	1.2 mm		6 mm	Not Qualified	16777216 bit	2.7 V		e1				.00001 Amp	8 mm	60 ns
M69KB048BD70W8T	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	UNCASED CHIP				85 Cel			2MX16	2M		-30 Cel	TIN LEAD	UPPER		X-XUUC-N		1.95 V				Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE	e0						70 ns
M69KB096AB70DW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	Other Memory ICs		85 Cel		3-STATE	4MX16	4M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	67108864 bit	1.7 V						.00001 Amp		70 ns
M69KB048BD70W8F	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	UNCASED CHIP				85 Cel			2MX16	2M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE		40	NOT SPECIFIED				70 ns
M69AB048BD70W8F	STMicroelectronics	PSEUDO STATIC RAM	OTHER	71	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8	16	UNCASED CHIP	BGA71,8X12,32	Other Memory ICs	.8 mm	85 Cel		3-STATE	2MX16	2M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE		40	NOT SPECIFIED		.00001 Amp		70 ns
M69KB096AA85CW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	Other Memory ICs		85 Cel		3-STATE	4MX16	4M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	67108864 bit	1.7 V						.00012 Amp		85 ns
M69KM096AACW8	STMicroelectronics	PSEUDO STATIC RAM	COMMERCIAL EXTENDED		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	4194304 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	Other Memory ICs		85 Cel		3-STATE	4MX16	4M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE					.00001 Amp		70 ns
M69KB096AA70AW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	Other Memory ICs		85 Cel		3-STATE	4MX16	4M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	67108864 bit	1.7 V						.00012 Amp		70 ns
M69KB096AA85AW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	4194304 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	Other Memory ICs		85 Cel		3-STATE	4MX16	4M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	67108864 bit	1.7 V						.00012 Amp		85 ns
M69AB048BD70ZA8T	STMicroelectronics	PSEUDO STATIC RAM	OTHER	71	TFBGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA71,8X12,32	Other Memory ICs	.8 mm	85 Cel		3-STATE	2MX16	2M		-30 Cel	TIN LEAD	BOTTOM		R-XBGA-B71		1.95 V	1.2 mm		7 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE	e0				.00001 Amp	11 mm	70 ns
M69KM048AACW8	STMicroelectronics	PSEUDO STATIC RAM	COMMERCIAL EXTENDED		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS	40 mA	2097152 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	Other Memory ICs		85 Cel		3-STATE	2MX16	2M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	33554432 bit	1.7 V						.00007 Amp		70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.