PSEUDO STATIC RAM SRAM 1,848

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
TC518128CSPL-70	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	5	5	8	IN-LINE	DIP32,.3	Other Memory ICs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	5.5 V	4.45 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0001 Amp	40 mm	70 ns
TC518128BSPL-70L	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words			5		8	IN-LINE			2.54 mm	70 Cel		128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T32	5.5 V	4.45 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V		e0					40 mm	70 ns
TC518129BPL-80V	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words			5		8	IN-LINE			2.54 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0					42 mm	80 ns
TC518512PL-80(DR)	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words			5		8	IN-LINE			2.54 mm	70 Cel		512KX8	512K		0 Cel	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	4.8 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0					42 mm	80 ns
TC518128CFL-70	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.5	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm	8.8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0001 Amp	20.6 mm	70 ns
TC518512FL-70LV	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	4194304 bit	4.5 V		e0					20.6 mm	70 ns
TC518128BFL-70L	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel		128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	5.5 V	2.8 mm	8.8 mm	Not Qualified	1048576 bit	4.5 V		e0					20.6 mm	70 ns
TC518129BFL-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	2.8 mm	8.8 mm	Not Qualified	1048576 bit	4.5 V		e0					20.6 mm	100 ns
TC518512FL-80(LT)	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K		-20 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	4194304 bit	4.5 V		e0					20.6 mm	80 ns
TC518128CFL-10L	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.5	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm	8.8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00005 Amp	20.6 mm	100 ns
TC51832ASP-85	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words			5		8	IN-LINE			2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28	5.5 V	4.45 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0					34.9 mm	85 ns
TC518128BFTL-80L	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0					18.4 mm	80 ns
TC518128CSPL-10L	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		COMMON	5	5	8	IN-LINE	DIP32,.3	Other Memory ICs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	5.5 V	4.45 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00005 Amp	40 mm	100 ns
TC518129BFL-10L	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	2.8 mm	8.8 mm	Not Qualified	1048576 bit	4.5 V		e0					20.6 mm	100 ns
TC518129BFTL-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0					18.4 mm	100 ns
TC511632FTL-85	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words			5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		32KX16	32K		0 Cel	TIN LEAD	DUAL		R-PDSO-G40	5.5 V	1.2 mm	10.16 mm	Not Qualified	524288 bit	4.5 V		e0					18.41 mm	85 ns
TC518512AFT-10V	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	YES	COMMON	3	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	Other Memory ICs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2.7 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	3.3 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V	USER SELECTABLE 5V VCC	e0			YES	.00004 Amp	20.95 mm	100 ns
TC518128ASPL-12	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words			5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	128KX8	128K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32	5.5 V	4.45 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		40 mm	120 ns
TC518512AF-70	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	YES	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	Other Memory ICs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2.7 V	0 Cel		DUAL	1	R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	4194304 bit	4.5 V					YES	.0001 Amp	20.6 mm	70 ns
TC518129AFTL-12LV	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		128KX8	128K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH; CAN ALSO OPERATE FROM 3.135V TO 3.465V	e0			YES		18.4 mm	120 ns
TC518128BFL-10L	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel		128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G32	5.5 V	2.8 mm	8.8 mm	Not Qualified	1048576 bit	4.5 V		e0					20.6 mm	100 ns
TC51832ASPL-70	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words			5		8	IN-LINE			2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28	5.5 V	4.45 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0					34.9 mm	70 ns
TC51864PL-85	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words			5		8	IN-LINE			2.54 mm	70 Cel		64KX8	64K		0 Cel	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	4.8 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0					42 mm	85 ns
TC518128BSPL-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words			5		8	IN-LINE			2.54 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDIP-T32	5.5 V	4.45 mm	7.62 mm	Not Qualified	1048576 bit	4.5 V		e0					40 mm	100 ns
TC518129CFWL-10V	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		COMMON	3	3/5	8	SMALL OUTLINE	SOP32,.56	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	2.7 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	3.3 V	2.8 mm	10.7 mm	Not Qualified	1048576 bit	2.7 V	USER SELECTABLE 5V VCC	e0			YES	.000025 Amp	20.6 mm	100 ns
TC518128BFWL-80V	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	1048576 bit	4.5 V		e0					20.6 mm	80 ns
TC518129CFTL-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Other Memory ICs	.5 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0001 Amp	18.4 mm	100 ns
TC51W6417XB-80	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	4194304 words		COMMON	2.75	2.7/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	4MX16	4M		-25 Cel		BOTTOM		R-PBGA-B48	3.3 V	1.2 mm	6 mm	Not Qualified	67108864 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED		.000005 Amp	9 mm	80 ns
TC518512AFT-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	YES	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	Other Memory ICs	1.27 mm	70 Cel	3-STATE	512KX8	512K	2.7 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0			YES	.0001 Amp	20.95 mm	100 ns
TC518129AP-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words			5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	128KX8	128K		0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		42 mm	100 ns
TC518128AFWL-12	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	128KX8	128K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		20.6 mm	120 ns
TC518128CFL-80	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.5	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm	8.8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0001 Amp	20.6 mm	80 ns
TC518512PL-80	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words			5		8	IN-LINE			2.54 mm	70 Cel	3-STATE	512KX8	512K		0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		42 mm	80 ns
TC518129CPL-80V	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words		COMMON	3	3/5	8	IN-LINE	DIP32,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	128KX8	128K	2.7 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	3.3 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	2.7 V	USER SELECTABLE 5V VCC	e0			YES	.000025 Amp	42 mm	80 ns
TC518129CPL-70	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	5	5	8	IN-LINE	DIP32,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0001 Amp	42 mm	70 ns
TC518129CPL-10L	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		COMMON	5	5	8	IN-LINE	DIP32,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	5.5 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00005 Amp	42 mm	100 ns
TC51WHM516AXBN70	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	2097152 words		COMMON	2.75	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel		BOTTOM		R-PBGA-B48	3.3 V	1.2 mm	6 mm	Not Qualified	33554432 bit	2.6 V			NOT SPECIFIED	NOT SPECIFIED		.000005 Amp	7 mm	70 ns
TC518129AF-10LV	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	128KX8	128K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm	8.8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		20.6 mm	100 ns
TC518128CPL-70V	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words		COMMON	3	3/5	8	IN-LINE	DIP32,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	128KX8	128K	2.7 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDIP-T32	3.3 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	2.7 V	USER SELECTABLE 5V VCC	e0			YES	.000025 Amp	42 mm	70 ns
TC518512FL-80(DR)	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K		0 Cel	TIN LEAD	DUAL		R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	4194304 bit	4.5 V		e0					20.6 mm	80 ns
TC51WKM516AXBN75	Toshiba	PSEUDO STATIC RAM	OTHER	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		2097152 words		COMMON	2.75	1.8/2,3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel		BOTTOM		R-PBGA-B48	3.3 V	1.2 mm	6 mm	Not Qualified	33554432 bit	2.6 V			NOT SPECIFIED	NOT SPECIFIED		.000005 Amp	7 mm	75 ns
TC51832F-85	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	32KX8	32K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28	5.5 V	2.7 mm	8.8 mm	Not Qualified	262144 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		18.5 mm	85 ns
TC518129CFTL-80	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Other Memory ICs	.5 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0001 Amp	18.4 mm	80 ns
TC511632FL-85	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	40	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words			5		16	SMALL OUTLINE			1.27 mm	70 Cel		32KX16	32K		0 Cel	TIN LEAD	DUAL		R-PDSO-G40	5.5 V	2.8 mm	10.7 mm	Not Qualified	524288 bit	4.5 V		e0					25.7 mm	85 ns
TC518129ATRL-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		128KX8	128K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V	CE/AUTO/SELF REFRESH	e0			YES		18.4 mm	100 ns
TC518128CFTL-80	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	Other Memory ICs	.5 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0001 Amp	18.4 mm	80 ns
TC51832AP-85	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words			5		8	IN-LINE			2.54 mm	70 Cel		32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDIP-T28	5.5 V	5.3 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0					37 mm	85 ns
TC518129CFWL-10	Toshiba	PSEUDO STATIC RAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G32	5.5 V	2.8 mm	10.7 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0001 Amp	20.6 mm	100 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.