PSEUDO STATIC RAM SRAM 1,848

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
M69KB128AA85CW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	8388608 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	Other Memory ICs		85 Cel	3-STATE	8MX16	8M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	134217728 bit	1.7 V					.0002 Amp		85 ns
M69KB128AA70AW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	8388608 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	Other Memory ICs		85 Cel	3-STATE	8MX16	8M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	134217728 bit	1.7 V					.0002 Amp		70 ns
M69AB048BD70W8T	STMicroelectronics	PSEUDO STATIC RAM	OTHER	71	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8	16	UNCASED CHIP	BGA71,8X12,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	2MX16	2M		-30 Cel	TIN LEAD	UPPER		X-XUUC-N		1.95 V				Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE ALSO POSSIBLE	e0			.00001 Amp		70 ns
M69KB128AA85AW8	STMicroelectronics	PSEUDO STATIC RAM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	35 mA	8388608 words	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	Other Memory ICs		85 Cel	3-STATE	8MX16	8M		-30 Cel		UPPER		X-XUUC-N		1.95 V				Not Qualified	134217728 bit	1.7 V					.0002 Amp		85 ns
SPG032D970R3R	Infineon Technologies	PSEUDO STATIC RAM	INDUSTRIAL						1	CMOS			ASYNCHRONOUS		2097152 words		3.3		16					85 Cel		2MX16	2M		-40 Cel						3.6 V					33554432 bit	2.7 V							70 ns
HYE18P32160AF-15	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel		2MX16	2M		-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e1				8 mm	85 ns
HYE18P32160AC-12.5	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e0			.00009 Amp	8 mm	70 ns
HYE18P64160AF-9.6	Infineon Technologies	PSEUDO STATIC RAM		54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm			4MX16	4M				BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V						8 mm
HYE18P32160AC-15	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS OPERATION ALSO POSSIBLE	e0			.00009 Amp	8 mm	85 ns
HYE18P32161AC-85	Infineon Technologies	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	17 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS OPERATION ALSO POSSIBLE	e0			.000025 Amp	8 mm	85 ns
HYE18P16161AC-85	Infineon Technologies	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	17 mA	1048576 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.7 V	-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	16777216 bit	1.7 V	SYNCHRONOUS OPERATION ALSO POSSIBLE	e0			.000025 Amp	8 mm	85 ns
HYE18P128160AF-12.5	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	8388608 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	8MX16	8M		-30 Cel		BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	134217728 bit	1.7 V					.00025 Amp	8 mm	9 ns
HYE18P32161AC-70	Infineon Technologies	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS OPERATION ALSO POSSIBLE	e0			.000025 Amp	8 mm	70 ns
HYE18P16161AC-70	Infineon Technologies	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	1048576 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.7 V	-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	16777216 bit	1.7 V	SYNCHRONOUS OPERATION ALSO POSSIBLE	e0			.000025 Amp	8 mm	70 ns
HYE18P16161AC-L85	Infineon Technologies	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	17 mA	1048576 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.7 V	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	16777216 bit	1.7 V	SYNCHRONOUS OPERATION ALSO POSSIBLE	e0			.000025 Amp	8 mm	85 ns
HYE18P32161AC-L85	Infineon Technologies	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	17 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e0			.000025 Amp	8 mm	85 ns
HYE18P32160AC-9.6	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V	SYNCHRONOUS OPERATION ALSO POSSIBLE	e0			.00009 Amp	8 mm	70 ns
HYE18P64160AF-15	Infineon Technologies	PSEUDO STATIC RAM		54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm			4MX16	4M				BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V						8 mm
HYE18P16161AC-L70	Infineon Technologies	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	1048576 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.7 V	-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	16777216 bit	1.7 V	SYNCHRONOUS OPERATION ALSO POSSIBLE	e0			.000025 Amp	8 mm	70 ns
HYE18P32160AC-L12.5	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e0			.00012 Amp	8 mm	70 ns
HYE18P128160AF-9.6	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	40 mA	8388608 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	8MX16	8M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	134217728 bit	1.7 V		e1			.00025 Amp	8 mm	7 ns
HYE18P32160AC-L9.6	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	35 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e0			.00012 Amp	8 mm	70 ns
HYE18P32160AC-L15	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	30 mA	2097152 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	TIN LEAD	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e0			.00012 Amp	8 mm	85 ns
HYE18P32161AC-L70	Infineon Technologies	PSEUDO STATIC RAM	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	20 mA	2097152 words	COMMON	1.8	1.8,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified	33554432 bit	1.7 V		e0			.000025 Amp	8 mm	70 ns
HYE18P128160AF-15	Infineon Technologies	PSEUDO STATIC RAM	OTHER	54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	30 mA	8388608 words	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	8MX16	8M		-30 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	134217728 bit	1.7 V		e1			.00025 Amp	8 mm	11 ns
HYE18P64160AF-12.5	Infineon Technologies	PSEUDO STATIC RAM		54	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm			4MX16	4M				BOTTOM		R-PBGA-B54		1.95 V	1 mm		6 mm	Not Qualified	67108864 bit	1.7 V						8 mm
S70KS1281DPBHI023	Infineon Technologies	PSEUDO STATIC RAM	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	72 mA	16777216 words	COMMON	1.8		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel		16MX8	16M	1.7 V	-40 Cel		BOTTOM	1	R-PBGA-B24	3	1.95 V	1 mm	166 MHz	6 mm		134217728 bit	1.7 V					.0004 Amp	8 mm
S80KS2563GABHV023	Infineon Technologies	PSEUDO STATIC RAM																																3
S80KS2563GABHM020	Infineon Technologies	PSEUDO STATIC RAM																												TIN SILVER COPPER				3									e1
S80KS2563GABHA020	Infineon Technologies	PSEUDO STATIC RAM																												TIN SILVER COPPER				3									e1
S80KS2563GABHV020	Infineon Technologies	PSEUDO STATIC RAM																												TIN SILVER COPPER				3									e1
S80KS2563GABHI020	Infineon Technologies	PSEUDO STATIC RAM																												TIN SILVER COPPER				3									e1
S80KS2562GABHM020	Infineon Technologies	PSEUDO STATIC RAM																												TIN SILVER COPPER				3									e1
S80KS2562GABHA020	Infineon Technologies	PSEUDO STATIC RAM																												TIN SILVER COPPER				3									e1
S80KS5123GABHV020	Infineon Technologies	PSEUDO STATIC RAM																												TIN SILVER COPPER				3									e1
S80KS2562GABHI020	Infineon Technologies	PSEUDO STATIC RAM																												TIN SILVER COPPER				3									e1	30	260
S80KS5123GABHI023	Infineon Technologies	PSEUDO STATIC RAM																																3
S80KS2562GABHI023	Infineon Technologies	PSEUDO STATIC RAM																																3
S80KS2563GABHB023	Infineon Technologies	PSEUDO STATIC RAM																																3
S80KS5123GABHA023	Infineon Technologies	PSEUDO STATIC RAM																																3
S80KS2562GABHV023	Infineon Technologies	PSEUDO STATIC RAM																																3
S80KS2563GABHA023	Infineon Technologies	PSEUDO STATIC RAM																																3
S80KS5123GABHM020	Infineon Technologies	PSEUDO STATIC RAM																												TIN SILVER COPPER				3									e1
S80KS2562GABHA023	Infineon Technologies	PSEUDO STATIC RAM																																3
S80KS2562GABHB020	Infineon Technologies	PSEUDO STATIC RAM																												TIN SILVER COPPER				3									e1
S80KS2563GABHI023	Infineon Technologies	PSEUDO STATIC RAM																																3
S80KS5123GABHI020	Infineon Technologies	PSEUDO STATIC RAM																												TIN SILVER COPPER				3									e1
S80KS2563GABHM023	Infineon Technologies	PSEUDO STATIC RAM																																3

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.