QDR SRAM SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C4142KV13-933FCXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	361	HBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.3		36	GRID ARRAY, HEAT SINK/SLUG			1 mm	85 Cel		4MX36	4M		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1					21 mm
CY7C1412KV18-300BZXC	Infineon Technologies	QDR SRAM		165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	700 mA	2097152 words	SEPARATE	1.8		18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	300 MHz	13 mm		37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1	30	260	NO	.27 Amp	15 mm	.45 ns
CY7C4041KV13-667FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.3		36	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		2MX36	2M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		75497472 bit	1.26 V		e1					21 mm
CY7C2245KV18-450BZXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1020 mA	1048576 words	SEPARATE	1.8		36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	85 Cel	3-STATE	1MX36	1M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	R-PBGA-B165	3	1.9 V	1.4 mm	450 MHz	13 mm		37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1	30	260	NO	.33 Amp	15 mm	.45 ns
IS61QDB251236A-250M3L	Integrated Silicon Solution	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1000 mA	524288 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.89 V	1.4 mm	250 MHz	15 mm	Not Qualified	18874368 bit	1.71 V	PIPELINED ARCHITECTURE	e1				.27 Amp	17 mm	.45 ns
CY7C4121KV13-633FCXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	361	HBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG			1 mm	85 Cel		8MX18	8M		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1					21 mm
CY7C1360C-200AXC	Infineon Technologies	QDR SRAM	COMMERCIAL	100	LQFP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	220 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3	40	260		.04 Amp	20 mm	3 ns
CY7C1425KV18-300BZXC	Infineon Technologies	QDR SRAM		165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	680 mA	4194304 words	SEPARATE	1.8		9	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	70 Cel	3-STATE	4MX9	4M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	300 MHz	13 mm		37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1	30	260	NO	.27 Amp	15 mm	.45 ns
CY7C1565KV18-400BZI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1000 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	400 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0		260		.32 Amp	15 mm	.45 ns
CY7C1545KV18-400BZXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1000 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	400 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260		.32 Amp	15 mm	.45 ns
CY7C15632KV18-450BZXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	780 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	450 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260		.34 Amp	15 mm	.45 ns
CY7C1613KV18-300BZI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		8388608 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	8MX18	8M	1.7 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	300 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e0		260			17 mm	.45 ns
CY7C1665KV18-450BZXC	Cypress Semiconductor	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1290 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX36	4M	1.7 V	0 Cel		BOTTOM		R-PBGA-B165		1.9 V	1.4 mm	450 MHz	15 mm	Not Qualified	150994944 bit	1.7 V						.46 Amp	17 mm	.45 ns
CY7C2263KV18-450BZXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	720 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	450 MHz	13 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1	30	260		.33 Amp	15 mm	.45 ns
CY7C4142KV13-106FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.3		36	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		4MX36	4M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1					21 mm
CY7C1313KV18-250BZC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	440 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e0	20	260		.25 Amp	15 mm	.45 ns
CY7C1315KV18-333BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		524288 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		512KX36	512K		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm		13 mm		18874368 bit	1.7 V	BURST ARCHITECTURE	e1		260			15 mm
CY7C1413KV18-250BZC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	470 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0	20	260		.26 Amp	15 mm	.45 ns
CY7C1414KV18-250BZI	Infineon Technologies	QDR SRAM		165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	730 mA	1048576 words	SEPARATE	1.8		36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40		1 mm	85 Cel	3-STATE	1MX36	1M	1.7 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm		37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e0	20	260	NO	.26 Amp	15 mm	.45 ns
CY7C15632KV18-450BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	780 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	450 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	20	260		.34 Amp	15 mm	.45 ns
CY7C1645KV18-450BZXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1290 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX36	4M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	450 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1		260		.44 Amp	17 mm	.45 ns
CY7C2163KV18-550BZXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	780 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	1MX18	1M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	550 MHz	13 mm	Not Qualified	18874368 bit	1.7 V	PIPELINED ARCHITECTURE	e1	30	260		.34 Amp	15 mm	.45 ns
CY7C2265KV18-550BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1210 mA	1048576 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	550 MHz	13 mm	Not Qualified	37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1	30	260		.36 Amp	15 mm	.45 ns
CY7C2265KV18-550BZXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.8		36	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX36	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm		13 mm		37748736 bit	1.7 V	PIPELINED ARCHITECTURE	e1					15 mm	.45 ns
CY7C25632KV18-400BZXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	710 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	400 MHz	13 mm	Not Qualified	75497472 bit	1.7 V		e1	30	260		.32 Amp	15 mm	.45 ns
CY7C25652KV18-550BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1310 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	550 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e1	30	260		.38 Amp	15 mm	.45 ns
CY7C2642KV18-333BZXC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		8388608 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	8MX18	8M	1.7 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	333 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e1	40	260			17 mm	.45 ns
CY7C2644KV18-333BZI	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	4MX36	4M	1.7 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	333 MHz	15 mm	Not Qualified	150994944 bit	1.7 V	PIPELINED ARCHITECTURE	e0					17 mm	.45 ns
CY7C4042KV13-933FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.3		36	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		2MX36	2M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		75497472 bit	1.26 V		e1					21 mm
CY7C4121KV13-667FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		8MX18	8M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1					21 mm
CY7C4122KV13-106FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		8MX18	8M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1					21 mm
5962F1120202VXA	Infineon Technologies	QDR SRAM	MILITARY	165	CGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY			1.27 mm	125 Cel		2MX36	2M		-55 Cel	TIN LEAD	BOTTOM		R-CBGA-X165	1	1.9 V	5.38 mm		21 mm	Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0					25 mm
CYWT1543AV18-250GCQB	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	PGA	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	SYNCHRONOUS	1100 mA	4194304 words	SEPARATE	1.8		18	GRID ARRAY	PGA165,11X15		1.27 mm	105 Cel	3-STATE	4MX18	4M	1.7 V	-40 Cel		PERPENDICULAR	2	R-CPGA-P165		1.9 V	5.38 mm	250 MHz	21 mm		75497472 bit	1.7 V					NO	.45 Amp	25 mm	.85 ns
CYPT1545AV18-250GLMB	Infineon Technologies	QDR SRAM	MILITARY	165	LGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY			1.27 mm	125 Cel		2MX36	2M		-55 Cel		BOTTOM		R-CBGA-N165	1	1.9 V	3.07 mm		21 mm		75497472 bit	1.7 V		e0					25 mm	.85 ns
CYWT1545AV18-250GCQB	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	PGA	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	SYNCHRONOUS	1140 mA	2097152 words	SEPARATE	1.8		36	GRID ARRAY	PGA165,11X15		1.27 mm	105 Cel	3-STATE	2MX36	2M	1.7 V	-40 Cel	TIN LEAD	PERPENDICULAR	2	R-CPGA-P165	1	1.9 V	5.38 mm	250 MHz	21 mm		75497472 bit	1.7 V		e0			NO	.385 Amp	25 mm	.85 ns
CYRS1543AV18-1XWI	Infineon Technologies	QDR SRAM	MILITARY		DIE	UNSPECIFIED	300k Rad(Si)	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	UNCASED CHIP				125 Cel		4MX18	4M		-55 Cel		UPPER		X-XUUC-N		1.9 V					75497472 bit	1.7 V	BURST ARCHITECTURE		NOT SPECIFIED	NOT SPECIFIED
CYPT1545AV18-250GCMB	Infineon Technologies	QDR SRAM	MILITARY	165	CGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY			1.27 mm	125 Cel		2MX36	2M		-55 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-CBGA-X165	1	1.9 V	5.38 mm		21 mm		75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0					25 mm
CYWT1542AV18-250GCQB	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	CGA	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY			1.27 mm	105 Cel		4MX18	4M		-40 Cel	TIN LEAD	BOTTOM		R-CBGA-X165	1	1.9 V	5.38 mm		21 mm		75497472 bit	1.7 V		e0					25 mm	.85 ns
CYWT1544AV18-250GCQB	Infineon Technologies	QDR SRAM	INDUSTRIAL	165	CGA	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS		2097152 words		1.8		36	GRID ARRAY			1.27 mm	105 Cel		2MX36	2M		-40 Cel	TIN LEAD	BOTTOM		R-CBGA-X165	1	1.9 V	5.38 mm		21 mm		75497472 bit	1.7 V		e0					25 mm	.85 ns
CYRS1543AV18-250GCMB	Infineon Technologies	QDR SRAM	MILITARY	165	CGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	1275 mA	4194304 words	SEPARATE	1.8	1.8	18	GRID ARRAY	CGA165,11X15,50	SRAMs	1.27 mm	125 Cel	3-STATE	4MX18	4M		-55 Cel	TIN LEAD	BOTTOM		R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0				.57 Amp	25 mm	.85 ns
CYPT1543AV18-250GCMB	Infineon Technologies	QDR SRAM	MILITARY	165	CGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY			1.27 mm	125 Cel		4MX18	4M		-55 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-CBGA-X165	1	1.9 V	5.38 mm		21 mm		75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0					25 mm
CYPT1543AV18-250GLMB	Infineon Technologies	QDR SRAM	MILITARY	165	LGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	NO LEAD	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY			1.27 mm	125 Cel		4MX18	4M		-55 Cel		BOTTOM		R-CBGA-N165	1	1.9 V	3.07 mm		21 mm		75497472 bit	1.7 V		e0					25 mm	.85 ns
CYRS1545AV18-250GCMB	Infineon Technologies	QDR SRAM	MILITARY	165	CGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS	1275 mA	2097152 words	SEPARATE	1.8	1.8	36	GRID ARRAY	CGA165,11X15,50	SRAMs	1.27 mm	125 Cel	3-STATE	2MX36	2M		-55 Cel	TIN LEAD	BOTTOM		R-CBGA-X165	1	1.9 V	5.38 mm	250 MHz	21 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0				.57 Amp	25 mm	.85 ns
5962F1120102VXA	Infineon Technologies	QDR SRAM	MILITARY	165	CGA	RECTANGULAR	300k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		UNSPECIFIED	PARALLEL	SYNCHRONOUS		4194304 words		1.8		18	GRID ARRAY			1.27 mm	125 Cel		4MX18	4M		-55 Cel		BOTTOM		R-CBGA-X165	1	1.9 V	5.38 mm		21 mm	Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0					25 mm
CY7C25632KV18-400BZC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	710 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	400 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0	20	235		.32 Amp	15 mm	.45 ns
CY7C25652KV18-400BZC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1000 mA	2097152 words	SEPARATE	1.8	1.5/1.8,1.8	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	2MX36	2M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	400 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0	20	235		.32 Amp	15 mm	.45 ns
CY7C1513KV18-250BZC	Infineon Technologies	QDR SRAM	COMMERCIAL	165	LBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	500 mA	4194304 words	SEPARATE	1.8	1.5/1.8,1.8	18	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	70 Cel	3-STATE	4MX18	4M	1.7 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B165	3	1.9 V	1.4 mm	250 MHz	13 mm	Not Qualified	75497472 bit	1.7 V	PIPELINED ARCHITECTURE	e0	20	220			15 mm	.45 ns
CY7C4021KV13-667FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		4MX18	4M		0 Cel		BOTTOM		S-PBGA-B361		1.34 V	2.765 mm		21 mm		75497472 bit	1.26 V			NOT SPECIFIED	NOT SPECIFIED			21 mm

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.