STANDARD SRAM SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
71V124SA15PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	120 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e3	40	260		.01 Amp	20.95 mm	15 ns
71V416L10PHG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	3 V	0 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.01 Amp	18.41 mm	10 ns
CY62147EV30LL-45B2XAT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON		2.5/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48						Not Qualified	4194304 bit							.000007 Amp		45 ns
CY7C1021BNL-15ZXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	64KX16	64K	4.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3					Not Qualified	1048576 bit			e4	20	260		.0005 Amp		15 ns
CY7C1049D-10VXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	90 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOJ36,.44		SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-J36	3	5.5 V	3.7592 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V		e4	40	260		.01 Amp	23.495 mm	10 ns
CY7C1061G30-10ZXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm		16777216 bit	2.2 V				260			18.4 mm	10 ns
IDT71024S12YG	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	4.5 V	0 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.683 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260	YES	.01 Amp	20.96 mm	12 ns
IDT71V124SA12TYG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	130 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	3 V	0 Cel	MATTE TIN	DUAL		R-PDSO-J32	3	3.6 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	3 V		e3	40	260		.01 Amp	20.955 mm	12 ns
IS62WV1288BLL-55HLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	1.2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.25 mm		8 mm	Not Qualified	1048576 bit	2.5 V		e3	30	260		.000005 Amp	11.8 mm	55 ns
IS64C6416AL-15TLA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	125 Cel		3-STATE	64KX16	64K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	10	260		.000125 Amp	18.415 mm	15 ns
K6R4016V1D-UI10	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	3 V	-40 Cel	Tin/Bismuth (Sn97Bi3)	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	LG-MAX	e6	40	260		.005 Amp	18.81 mm	10 ns
M48Z12-70PC1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6		SRAMs	2.54 mm	70 Cel		3-STATE	2KX8	2K	4.5 V	0 Cel	MATTE TIN	DUAL	1	R-PDIP-T24		5.5 V	9.65 mm		15.24 mm	Not Qualified	16384 bit	4.5 V		e3			YES	.003 Amp	34.545 mm
R1WV6416RSD-5SI#B0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	52	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP52,.4,16	8	SRAMs	.4 mm	85 Cel		3-STATE	4MX16	4M	2 V	-40 Cel		DUAL		R-PDSO-G52	2	3.6 V	1.2 mm		8.89 mm	Not Qualified	67108864 bit	2.7 V				260		.000024 Amp	10.79 mm	55 ns
R1WV6416RSD-5SI#S0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	52	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP52,.4,16	8	SRAMs	.4 mm	85 Cel		3-STATE	4MX16	4M	2 V	-40 Cel		DUAL		R-PDSO-G52	2					Not Qualified	67108864 bit					260		.000024 Amp		55 ns
R1WV6416RSD-5SR	Renesas Electronics	STANDARD SRAM	COMMERCIAL	52	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP52,.4,16	8	SRAMs	.4 mm	70 Cel		3-STATE	4MX16	4M	2.7 V	0 Cel		DUAL		R-PDSO-G52	1	3.6 V	1.2 mm		8.89 mm	Not Qualified	67108864 bit	2.7 V						.000024 Amp	10.79 mm	55 ns
R1WV6416RSD-5SR#B0	Renesas Electronics	STANDARD SRAM	COMMERCIAL	52	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP52,.4,16	8	SRAMs	.4 mm	70 Cel		3-STATE	4MX16	4M	2 V	0 Cel		DUAL		R-PDSO-G52	2					Not Qualified	67108864 bit					260		.000024 Amp		55 ns
R1WV6416RSD-5SR#S0	Renesas Electronics	STANDARD SRAM	COMMERCIAL	52	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	COMMON		3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP52,.4,16	8	SRAMs	.4 mm	70 Cel		3-STATE	4MX16	4M	2 V	0 Cel		DUAL		R-PDSO-G52	2					Not Qualified	67108864 bit					260		.000024 Amp		55 ns
23A1024-I/P	Microchip Technology	STANDARD SRAM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE		1.8/2	8	IN-LINE	DIP8,.3		SRAMs	2.54 mm	85 Cel		3-STATE	128KX8	128K	1.7 V	-40 Cel	MATTE TIN	DUAL	1	R-PDIP-T8		2.2 V	5.334 mm	20 MHz	7.62 mm	Not Qualified	1048576 bit	1.7 V		e3			NO	.000004 Amp	9.271 mm
23LC1024T-E/SN	Microchip Technology	STANDARD SRAM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE	5	3/5	8	SMALL OUTLINE	SOP8,.23		SRAMs	1.27 mm	125 Cel		3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.75 mm	16 MHz	3.9 mm	Not Qualified	1048576 bit	2.5 V		e3		260	NO	.00002 Amp	4.9 mm
71024S15YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	155 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-J32	3	5.5 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260	YES	.04 Amp	20.995 mm	15 ns
71024S25TYGI8	Integrated Device Technology	STANDARD SRAM																															MATTE TIN				3									e3	40	260
71256SA20PZGI8	Renesas Electronics	STANDARD SRAM																															Matte Tin (Sn) - annealed				3									e3	40	260
71V016SA20PHGI	Renesas Electronics	STANDARD SRAM		44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32			.8 mm	85 Cel		3-STATE	64KX16	64K	3.15 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm		1048576 bit	3.15 V		e3	30	260	YES	.01 Amp	18.41 mm	20 ns
71V124SA10PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	3.15 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3.15 V		e3	40	260		.01 Amp	20.95 mm	10 ns
71V424S12PHGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	18.41 mm	12 ns
71V67603S150PFGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	325 mA	262144 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87		SRAMs	.65 mm	85 Cel		3-STATE	256KX36	256K	3.14 V	-40 Cel	MATTE TIN	QUAD		R-PQFP-G100	3	3.465 V	1.6 mm	150 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE	e3	30	260		.07 Amp	20 mm	3.8 ns
AP3983BMTR-G1	Diodes Incorporated	STANDARD SRAM																															MATTE TIN				1									e3	30	260
AS6C8008-55BIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	60 mA	1048576 words	COMMON	3	3/5	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	1MX8	1M	2 V	-40 Cel		BOTTOM		R-PBGA-B48	3	5.5 V	1.4 mm		6 mm	Not Qualified	8388608 bit	2.7 V						.00005 Amp	8 mm	55 ns
AS7C316098A-10BIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	160 mA	1048576 words	COMMON	3.3		16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	85 Cel		3-STATE	1MX16	1M	1.5 V	-40 Cel		BOTTOM	1	R-PBGA-B48	3	3.6 V	1.4 mm		6 mm		16777216 bit	2.7 V			40	260	YES	.04 Amp	8 mm	10 ns
CY62256NLL-70ZRXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22		SRAMs	.55 mm	85 Cel	YES	3-STATE	32KX8	32K	2 V	-40 Cel		DUAL		R-PDSO-G28						Not Qualified	262144 bit							.00001 Amp		70 ns
CY7C1051DV33-12ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	524288 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	512KX16	512K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm		10.16 mm	Not Qualified	8388608 bit	3 V		e3	40	260		.02 Amp	18.415 mm	12 ns
CY7C1069DV33-10ZSXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	175 mA	2097152 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	2MX8	2M	2 V	-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V		e3	20	260		.025 Amp	22.415 mm	10 ns
CY7C199-35VC	Rochester Electronics	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE				1.27 mm	70 Cel			32KX8	32K		0 Cel	TIN LEAD	DUAL		R-PDSO-J28		5.5 V	3.556 mm		7.5 mm	Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN	e0					17.907 mm	35 ns
IDT71V124SA10TYG8	Renesas Electronics	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	145 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	3.15 V	0 Cel	MATTE TIN	DUAL		R-PDSO-J32	3	3.6 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	3.15 V		e3	40	260		.01 Amp	20.955 mm	10 ns
IDT71V124SA12TYGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	140 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	3 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-J32	3	3.6 V	3.7592 mm		7.62 mm	Not Qualified	1048576 bit	3.15 V		e3	40	260		.01 Amp	20.955 mm	12 ns
IDT71V424S12PHGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.02 Amp	18.41 mm	12 ns
IS61WV25616BLL-10BLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3.3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		6 mm	Not Qualified	4194304 bit	2.4 V		e1	10	260		.009 Amp	8 mm	10 ns
IS61WV25616EDBLL-10TI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			1MX16	1M		-40 Cel		DUAL		R-PDSO-G48	1	3.6 V	1.2 mm		12 mm		16777216 bit	2.4 V							18.4 mm	10 ns
IS61WV25616EDBLL-10TI-TR	Integrated Silicon Solution	STANDARD SRAM																																			1
IS61WV25616EDBLL-10TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	262144 words	COMMON	3.3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.4 V		e3	30	260		.006 Amp	18.41 mm	10 ns
IS62C1024L-70W	Integrated Silicon Solution	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		SRAMs	2.54 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	4.572 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00025 Amp	41.91 mm	70 ns
IS62C1024L-70WI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		SRAMs	2.54 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	4.572 mm		15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.0004 Amp	41.91 mm	70 ns
IS62WV102416EBLL-45BLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	12 mA	1048576 words	COMMON	3.3	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel		3-STATE	1MX16	1M	1.5 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	16777216 bit	2.2 V		e1	30	260		.000065 Amp	8 mm	45 ns
IS62WV51216GBLL-45TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			512KX16	512K		-40 Cel		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm		8388608 bit	2.2 V			NOT SPECIFIED	NOT SPECIFIED			18.4 mm	45 ns
KM681000CLG-5	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm		11.43 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00002 Amp	20.47 mm	55 ns
KM681000CLG-5L	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm		11.43 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00001 Amp	20.47 mm	55 ns
LY62W5128WL-55LLI	Lyontek	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel			512KX8	512K		-40 Cel	Tin (Sn)	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm		10.16 mm		4194304 bit	2.7 V		e3	30	260			20.95 mm	55 ns
M5M5256DP-70LL	Mitsubishi Electric	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.5 mm		15.24 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.00001 Amp	36.7 mm	70 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.