STANDARD SRAM SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

CY62128BLL-70SIT

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

128KX8

128K

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G32

3

5.5 V

2.997 mm

11.303 mm

Not Qualified

1048576 bit

4.5 V

e0

20

220

20.4465 mm

70 ns

CY62157DV30LL-55ZSXIT

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

44

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

15 mA

524288 words

COMMON

2.5/3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

512KX16

512K

1.5 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G44

3

Not Qualified

8388608 bit

e4

20

260

.000004 Amp

55 ns

CY62158ELL-45ZSXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

25 mA

1048576 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

1MX8

1M

2 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G44

3

5.5 V

1.194 mm

10.16 mm

Not Qualified

8388608 bit

4.5 V

e4

20

260

.000008 Amp

18.415 mm

45 ns

CY62256LL-70PXC

Cypress Semiconductor

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

SRAMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

2 V

0 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDIP-T28

1

5.5 V

5.08 mm

15.24 mm

Not Qualified

262144 bit

4.5 V

e4

40

260

36.322 mm

70 ns

CY7C1019CV33-10ZXCT

Cypress Semiconductor

STANDARD SRAM

COMMERCIAL

32

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

3.3

8

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

128KX8

128K

0 Cel

TIN

DUAL

R-PDSO-G32

3.63 V

1.2 mm

10.16 mm

Not Qualified

1048576 bit

2.97 V

e3

20.95 mm

10 ns

CY7C1021BNL-15ZSXA

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

PARALLEL

ASYNCHRONOUS

130 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

64KX16

64K

4.5 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G44

3

5.5 V

1.194 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e4

20

260

.0005 Amp

18.415 mm

15 ns

CY7C1021D-10ZSXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

80 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

64KX16

64K

2 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G44

3

5.5 V

1.19 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e4

20

260

.003 Amp

18.415 mm

10 ns

CY7C1021D-10ZSXIT

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

80 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

64KX16

64K

2 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G44

3

5.5 V

1.194 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e4

20

260

.003 Amp

18.415 mm

10 ns

CY7C1041CV33-8ZSXIT

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

100 mA

262144 words

COMMON

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

.8 mm

85 Cel

3-STATE

256KX16

256K

2 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

1

R-PDSO-G44

3

3.63 V

1.194 mm

10.16 mm

4194304 bit

2.97 V

e4

260

YES

.01 Amp

18.415 mm

8 ns

CY7C1520KV18-250BZIT

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

165

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

SYNCHRONOUS

530 mA

2097152 words

COMMON

1.5/1.8,1.8

36

GRID ARRAY

BGA165,11X15,40

SRAMs

1 mm

85 Cel

3-STATE

2MX36

2M

1.7 V

-40 Cel

BOTTOM

R-PBGA-B165

250 MHz

Not Qualified

75497472 bit

.45 ns

CY7C199-25VCR

Cypress Semiconductor

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

32768 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

DUAL

1

R-PDSO-J28

5.5 V

3.556 mm

7.5 mm

Not Qualified

262144 bit

4.5 V

AUTOMATIC POWER-DOWN

YES

17.907 mm

25 ns

CY7C199-25VCT

Rochester Electronics

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

32768 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

32KX8

32K

0 Cel

DUAL

R-PDSO-J28

5.5 V

3.556 mm

7.5 mm

262144 bit

4.5 V

AUTOMATIC POWER-DOWN

NOT SPECIFIED

NOT SPECIFIED

17.907 mm

25 ns

EDI88130CS55CB

Microsemi

STANDARD SRAM

MILITARY

32

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

MIL-STD-883

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE

125 Cel

128KX8

128K

-55 Cel

DUAL

R-CDIP-T32

5.5 V

10.16 mm

Not Qualified

1048576 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

55 ns

IDT6116LA35TDB

Renesas Electronics

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

MIL-STD-883 Class B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

105 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.3

SRAMs

2.54 mm

125 Cel

3-STATE

2KX8

2K

2 V

-55 Cel

TIN LEAD

DUAL

1

R-GDIP-T24

5.5 V

5.08 mm

7.62 mm

Not Qualified

16384 bit

4.5 V

e0

YES

.0002 Amp

32.004 mm

35 ns

IDT71024S15TYG8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

155 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ32,.34

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

4.5 V

0 Cel

MATTE TIN

DUAL

1

R-PDSO-J32

3

5.5 V

3.76 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

e3

40

260

YES

.01 Amp

20.96 mm

15 ns

IDT71024S15YGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

155 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

4.5 V

-40 Cel

Matte Tin (Sn) - annealed

DUAL

1

R-PDSO-J32

3

5.5 V

3.683 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e3

30

260

YES

.01 Amp

20.955 mm

15 ns

IDT71256SA12YGI

Integrated Device Technology

STANDARD SRAM

INDUSTRIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

160 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

85 Cel

3-STATE

32KX8

32K

4.5 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-J28

3

5.5 V

3.556 mm

7.5184 mm

Not Qualified

262144 bit

4.5 V

e3

40

260

.015 Amp

17.9324 mm

12 ns

IDT71256SA12YGI8

Integrated Device Technology

STANDARD SRAM

INDUSTRIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

160 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

85 Cel

3-STATE

32KX8

32K

4.5 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-J28

3

5.5 V

3.556 mm

7.5184 mm

Not Qualified

262144 bit

4.5 V

e3

40

260

.015 Amp

17.9324 mm

12 ns

IDT71256SA15PZGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

150 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

85 Cel

3-STATE

32KX8

32K

4.5 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G28

3

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

e3

40

260

.015 Amp

11.8 mm

15 ns

IDT71256SA20PZGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

145 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

85 Cel

3-STATE

32KX8

32K

4.5 V

-40 Cel

MATTE TIN

DUAL

1

R-PDSO-G28

3

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

e3

40

260

YES

.015 Amp

11.8 mm

20 ns

IDT71256SA25PZGI8

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

145 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP28,.53,22

SRAMs

.55 mm

85 Cel

3-STATE

32KX8

32K

4.5 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G28

3

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

e3

40

260

.015 Amp

11.8 mm

25 ns

IDT71256SA25YI

Integrated Device Technology

STANDARD SRAM

INDUSTRIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

145 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

85 Cel

3-STATE

32KX8

32K

4.5 V

-40 Cel

Tin/Lead (Sn85Pb15)

DUAL

R-PDSO-J28

3

5.5 V

3.556 mm

7.5184 mm

Not Qualified

262144 bit

4.5 V

e0

30

225

.015 Amp

17.9324 mm

25 ns

IDT71V124SA10PHGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

150 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

SRAMs

1.27 mm

85 Cel

3-STATE

128KX8

128K

3.15 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G32

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

1048576 bit

3.15 V

e3

40

260

.01 Amp

20.95 mm

10 ns

IDT71V424S12PHG8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

170 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

70 Cel

3-STATE

512KX8

512K

3 V

0 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G44

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e3

30

260

.02 Amp

18.41 mm

12 ns

IDT71V424S12PHGI

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

170 mA

524288 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

512KX8

512K

3 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G44

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e3

30

260

.02 Amp

18.41 mm

12 ns

IS61C6416AL-12KI

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

55 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

64KX16

64K

2 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-J44

3

5.5 V

3.75 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e0

.0001 Amp

28.575 mm

12 ns

IS61WV102416BLL-10MI

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

95 mA

1048576 words

COMMON

3.3

2.5/3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

1MX16

1M

1.2 V

-40 Cel

Tin/Lead (Sn/Pb)

BOTTOM

R-PBGA-B48

3

3.6 V

1.2 mm

9 mm

Not Qualified

16777216 bit

2.4 V

e0

30

235

.02 Amp

11 mm

10 ns

IS61WV204816BLL-10TLI

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

2MX16

2M

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

33554432 bit

2.4 V

NOT SPECIFIED

NOT SPECIFIED

18.4 mm

10 ns

IS61WV204816BLL-10TLI-TR

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

2MX16

2M

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

33554432 bit

2.2 V

NOT SPECIFIED

NOT SPECIFIED

18.4 mm

10 ns

IS61WV25616BLL-10BLI-TR

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

48

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

ASYNCHRONOUS

45 mA

262144 words

COMMON

3.3

2.5/3.3

16

GRID ARRAY, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX16

256K

2 V

-40 Cel

BOTTOM

R-PBGA-B48

Not Qualified

4194304 bit

.009 Amp

10 ns

IS62WV102416FBLL-45BLI-TR

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

BOTTOM

R-PBGA-B48

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

NOT SPECIFIED

NOT SPECIFIED

8 mm

45 ns

IS62WV102416GBLL-45TLI

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

1MX16

1M

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

16777216 bit

2.2 V

NOT SPECIFIED

NOT SPECIFIED

18.4 mm

45 ns

IS62WV102416GBLL-45TLI-TR

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

1MX16

1M

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

16777216 bit

2.2 V

NOT SPECIFIED

NOT SPECIFIED

18.4 mm

45 ns

IS63LV1024L-12BLI

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

36

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

100 mA

131072 words

COMMON

3.3

3.3

8

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA36,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

128KX8

128K

2 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B36

3

3.45 V

1.2 mm

8 mm

Not Qualified

1048576 bit

3.15 V

e1

10

260

.0015 Amp

10 mm

12 ns

IS66WVS4M8ALL-104KLI

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

8

HVSON

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

15 mA

4194304 words

COMMON

1.8

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.25

1.27 mm

85 Cel

4MX8

4M

1.65 V

-40 Cel

DUAL

1

R-XDSO-N8

1.95 V

.8 mm

104 MHz

5 mm

33554432 bit

1.65 V

NO

.0002 Amp

6 mm

IS66WVS4M8ALL-104NLI

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

4194304 words

COMMON

1.8

8

SMALL OUTLINE

SOP8,.25

1.27 mm

85 Cel

4MX8

4M

1.65 V

-40 Cel

DUAL

1

R-PDSO-G8

1.95 V

1.75 mm

104 MHz

3.9 mm

33554432 bit

1.65 V

NO

.0002 Amp

4.9 mm

IS66WVS4M8ALL-104TLI

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

8

HVSON

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

SERIAL

SYNCHRONOUS

15 mA

4194304 words

COMMON

1.8

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.12,32

.8 mm

85 Cel

4MX8

4M

1.65 V

-40 Cel

DUAL

1

R-XDSO-N8

1.95 V

.6 mm

104 MHz

3 mm

33554432 bit

1.65 V

NO

.0002 Amp

4 mm

IS66WVS4M8BLL-104NLI

Integrated Silicon Solution

STANDARD SRAM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

4194304 words

COMMON

3

8

SMALL OUTLINE

SOP8,.25

1.27 mm

85 Cel

4MX8

4M

2.7 V

-40 Cel

DUAL

1

R-PDSO-G8

3.6 V

1.75 mm

104 MHz

3.9 mm

33554432 bit

2.7 V

NO

.0002 Amp

4.9 mm

LP621024D-70LLF

Amic Technology

STANDARD SRAM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

70 mA

131072 words

COMMON

5

5

8

IN-LINE

DIP32,.6

SRAMs

2.54 mm

70 Cel

3-STATE

128KX8

128K

2 V

0 Cel

DUAL

R-PDIP-T32

5.5 V

5.33 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

YES

.00001 Amp

41.91 mm

70 ns

M5M51008DVP-70HIBT

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

85 Cel

128KX8

128K

-40 Cel

DUAL

R-PDSO-G32

5.5 V

1048576 bit

4.5 V

70 ns

M5M51008DVP-70HIST

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

32

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.5 mm

85 Cel

128KX8

128K

-40 Cel

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

1048576 bit

4.5 V

18.4 mm

70 ns

M5M5408BFP-70H

Renesas Electronics

STANDARD SRAM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

90 mA

524288 words

COMMON

5

5

8

SMALL OUTLINE

SOP32,.56

SRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

2 V

0 Cel

DUAL

R-PDSO-G32

5.5 V

Not Qualified

4194304 bit

4.5 V

.000015 Amp

70 ns

MB8464A-10LLPF

Fujitsu

STANDARD SRAM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

8192 words

COMMON

5

5

8

SMALL OUTLINE

SOP28,.5

SRAMs

1.27 mm

70 Cel

3-STATE

8KX8

8K

2 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G28

Not Qualified

65536 bit

e0

.000002 Amp

100 ns

N25S818HAS21I

Onsemi

STANDARD SRAM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

10 mA

32768 words

SEPARATE

1.8

1.8

8

SMALL OUTLINE

SOP8,.25

SRAMs

1.27 mm

85 Cel

3-STATE

32KX8

32K

1.7 V

-40 Cel

MATTE TIN

DUAL

1, (3 LINE)

R-PDSO-G8

3

1.95 V

1.75 mm

16 MHz

3.91 mm

Not Qualified

262144 bit

1.7 V

e3

30

260

.0000005 Amp

4.9 mm

R1LV0816ASA-5SI#B0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

16

SMALL OUTLINE, THIN PROFILE

8

.5 mm

85 Cel

512KX16

512K

-40 Cel

DUAL

R-PDSO-G48

3

2.7 V

1.2 mm

12 mm

8388608 bit

2.4 V

ACCESS TIME 55NS AVAILABLE WITH 2.7V TO 3.6V SUPPLY RANGE

18.4 mm

70 ns

R1LV1616RSA-7SI#S0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

1048576 words

COMMON

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

8

SRAMs

.5 mm

85 Cel

3-STATE

1MX16

1M

2 V

-40 Cel

DUAL

R-PDSO-G48

2

Not Qualified

16777216 bit

260

70 ns

RMLV0816BGSB-4S2#AA0

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

.8 mm

85 Cel

3-STATE

512KX16

512K

1.5 V

-40 Cel

DUAL

1

R-PDSO-G44

3

3.6 V

1.2 mm

10.16 mm

8388608 bit

2.4 V

IT ALSO OPERATES AT 2.4 TO 2.7 V SUPPLY VOLTAGE, IT ALSO HAVE ACCESS TIME 55 NS

YES

.00001 Amp

18.41 mm

45 ns

RMLV1616AGBG-4U2#AC0

Renesas Electronics

STANDARD SRAM

48

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

35 mA

1048576 words

COMMON

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

1MX16

1M

1.5 V

-40 Cel

BOTTOM

1

R-PBGA-B48

3

3.6 V

1.2 mm

7.5 mm

16777216 bit

2.7 V

CAN ALSO BE CONFIGURED AS 2M X 8

YES

.000008 Amp

8.5 mm

45 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.