Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
3 |
5.5 V |
2.997 mm |
11.303 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
20 |
220 |
20.4465 mm |
70 ns |
|||||||||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
15 mA |
524288 words |
COMMON |
2.5/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
512KX16 |
512K |
1.5 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G44 |
3 |
Not Qualified |
8388608 bit |
e4 |
20 |
260 |
.000004 Amp |
55 ns |
|||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
25 mA |
1048576 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
1MX8 |
1M |
2 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G44 |
3 |
5.5 V |
1.194 mm |
10.16 mm |
Not Qualified |
8388608 bit |
4.5 V |
e4 |
20 |
260 |
.000008 Amp |
18.415 mm |
45 ns |
||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
5.08 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
e4 |
40 |
260 |
36.322 mm |
70 ns |
|||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
TIN |
DUAL |
R-PDSO-G32 |
3.63 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
2.97 V |
e3 |
20.95 mm |
10 ns |
||||||||||||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
130 mA |
65536 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
4.5 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G44 |
3 |
5.5 V |
1.194 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e4 |
20 |
260 |
.0005 Amp |
18.415 mm |
15 ns |
|||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
80 mA |
65536 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
2 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G44 |
3 |
5.5 V |
1.19 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e4 |
20 |
260 |
.003 Amp |
18.415 mm |
10 ns |
||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
80 mA |
65536 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
2 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G44 |
3 |
5.5 V |
1.194 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e4 |
20 |
260 |
.003 Amp |
18.415 mm |
10 ns |
||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
100 mA |
262144 words |
COMMON |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
2 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
1 |
R-PDSO-G44 |
3 |
3.63 V |
1.194 mm |
10.16 mm |
4194304 bit |
2.97 V |
e4 |
260 |
YES |
.01 Amp |
18.415 mm |
8 ns |
||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
165 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
530 mA |
2097152 words |
COMMON |
1.5/1.8,1.8 |
36 |
GRID ARRAY |
BGA165,11X15,40 |
SRAMs |
1 mm |
85 Cel |
3-STATE |
2MX36 |
2M |
1.7 V |
-40 Cel |
BOTTOM |
R-PBGA-B165 |
250 MHz |
Not Qualified |
75497472 bit |
.45 ns |
|||||||||||||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
DUAL |
1 |
R-PDSO-J28 |
5.5 V |
3.556 mm |
7.5 mm |
Not Qualified |
262144 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
YES |
17.907 mm |
25 ns |
||||||||||||||||||||||
Rochester Electronics |
STANDARD SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
32KX8 |
32K |
0 Cel |
DUAL |
R-PDSO-J28 |
5.5 V |
3.556 mm |
7.5 mm |
262144 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
NOT SPECIFIED |
NOT SPECIFIED |
17.907 mm |
25 ns |
||||||||||||||||||||||||
Microsemi |
STANDARD SRAM |
MILITARY |
32 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
MIL-STD-883 |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
IN-LINE |
125 Cel |
128KX8 |
128K |
-55 Cel |
DUAL |
R-CDIP-T32 |
5.5 V |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
55 ns |
||||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
MILITARY |
24 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
MIL-STD-883 Class B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
105 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
2 V |
-55 Cel |
TIN LEAD |
DUAL |
1 |
R-GDIP-T24 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
16384 bit |
4.5 V |
e0 |
YES |
.0002 Amp |
32.004 mm |
35 ns |
|||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
155 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.34 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
MATTE TIN |
DUAL |
1 |
R-PDSO-J32 |
3 |
5.5 V |
3.76 mm |
7.62 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
40 |
260 |
YES |
.01 Amp |
20.96 mm |
15 ns |
||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
155 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
1 |
R-PDSO-J32 |
3 |
5.5 V |
3.683 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.01 Amp |
20.955 mm |
15 ns |
||||||||||
|
Integrated Device Technology |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
160 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-J28 |
3 |
5.5 V |
3.556 mm |
7.5184 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
40 |
260 |
.015 Amp |
17.9324 mm |
12 ns |
||||||||||||
|
Integrated Device Technology |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
160 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-J28 |
3 |
5.5 V |
3.556 mm |
7.5184 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
40 |
260 |
.015 Amp |
17.9324 mm |
12 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
150 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
40 |
260 |
.015 Amp |
11.8 mm |
15 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
145 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-40 Cel |
MATTE TIN |
DUAL |
1 |
R-PDSO-G28 |
3 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
40 |
260 |
YES |
.015 Amp |
11.8 mm |
20 ns |
||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
145 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
40 |
260 |
.015 Amp |
11.8 mm |
25 ns |
||||||||||||
Integrated Device Technology |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
145 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
4.5 V |
-40 Cel |
Tin/Lead (Sn85Pb15) |
DUAL |
R-PDSO-J28 |
3 |
5.5 V |
3.556 mm |
7.5184 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
30 |
225 |
.015 Amp |
17.9324 mm |
25 ns |
|||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
150 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
3.15 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G32 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
3.15 V |
e3 |
40 |
260 |
.01 Amp |
20.95 mm |
10 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
170 mA |
524288 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e3 |
30 |
260 |
.02 Amp |
18.41 mm |
12 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
170 mA |
524288 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
3 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e3 |
30 |
260 |
.02 Amp |
18.41 mm |
12 ns |
||||||||||||
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
55 mA |
65536 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-J44 |
3 |
5.5 V |
3.75 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.0001 Amp |
28.575 mm |
12 ns |
|||||||||||||||
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
95 mA |
1048576 words |
COMMON |
3.3 |
2.5/3.3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
1.2 V |
-40 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1.2 mm |
9 mm |
Not Qualified |
16777216 bit |
2.4 V |
e0 |
30 |
235 |
.02 Amp |
11 mm |
10 ns |
|||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
2MX16 |
2M |
-40 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
33554432 bit |
2.4 V |
NOT SPECIFIED |
NOT SPECIFIED |
18.4 mm |
10 ns |
||||||||||||||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
2MX16 |
2M |
-40 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
33554432 bit |
2.2 V |
NOT SPECIFIED |
NOT SPECIFIED |
18.4 mm |
10 ns |
||||||||||||||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
48 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
45 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3 |
16 |
GRID ARRAY, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
2 V |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
Not Qualified |
4194304 bit |
.009 Amp |
10 ns |
|||||||||||||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1 mm |
6 mm |
16777216 bit |
2.2 V |
NOT SPECIFIED |
NOT SPECIFIED |
8 mm |
45 ns |
||||||||||||||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
16777216 bit |
2.2 V |
NOT SPECIFIED |
NOT SPECIFIED |
18.4 mm |
45 ns |
||||||||||||||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.5 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
16777216 bit |
2.2 V |
NOT SPECIFIED |
NOT SPECIFIED |
18.4 mm |
45 ns |
||||||||||||||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
36 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
100 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA36,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B36 |
3 |
3.45 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
3.15 V |
e1 |
10 |
260 |
.0015 Amp |
10 mm |
12 ns |
||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
15 mA |
4194304 words |
COMMON |
1.8 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.25 |
1.27 mm |
85 Cel |
4MX8 |
4M |
1.65 V |
-40 Cel |
DUAL |
1 |
R-XDSO-N8 |
1.95 V |
.8 mm |
104 MHz |
5 mm |
33554432 bit |
1.65 V |
NO |
.0002 Amp |
6 mm |
|||||||||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
15 mA |
4194304 words |
COMMON |
1.8 |
8 |
SMALL OUTLINE |
SOP8,.25 |
1.27 mm |
85 Cel |
4MX8 |
4M |
1.65 V |
-40 Cel |
DUAL |
1 |
R-PDSO-G8 |
1.95 V |
1.75 mm |
104 MHz |
3.9 mm |
33554432 bit |
1.65 V |
NO |
.0002 Amp |
4.9 mm |
|||||||||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
8 |
HVSON |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SERIAL |
SYNCHRONOUS |
15 mA |
4194304 words |
COMMON |
1.8 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.12,32 |
.8 mm |
85 Cel |
4MX8 |
4M |
1.65 V |
-40 Cel |
DUAL |
1 |
R-XDSO-N8 |
1.95 V |
.6 mm |
104 MHz |
3 mm |
33554432 bit |
1.65 V |
NO |
.0002 Amp |
4 mm |
|||||||||||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
15 mA |
4194304 words |
COMMON |
3 |
8 |
SMALL OUTLINE |
SOP8,.25 |
1.27 mm |
85 Cel |
4MX8 |
4M |
2.7 V |
-40 Cel |
DUAL |
1 |
R-PDSO-G8 |
3.6 V |
1.75 mm |
104 MHz |
3.9 mm |
33554432 bit |
2.7 V |
NO |
.0002 Amp |
4.9 mm |
|||||||||||||||||||
|
Amic Technology |
STANDARD SRAM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
70 mA |
131072 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
2 V |
0 Cel |
DUAL |
R-PDIP-T32 |
5.5 V |
5.33 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
YES |
.00001 Amp |
41.91 mm |
70 ns |
||||||||||||||
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE |
85 Cel |
128KX8 |
128K |
-40 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1048576 bit |
4.5 V |
70 ns |
|||||||||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
.5 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
18.4 mm |
70 ns |
||||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
90 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
2 V |
0 Cel |
DUAL |
R-PDSO-G32 |
5.5 V |
Not Qualified |
4194304 bit |
4.5 V |
.000015 Amp |
70 ns |
|||||||||||||||||||||
Fujitsu |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
60 mA |
8192 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
2 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G28 |
Not Qualified |
65536 bit |
e0 |
.000002 Amp |
100 ns |
||||||||||||||||||||||
|
Onsemi |
STANDARD SRAM |
INDUSTRIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
10 mA |
32768 words |
SEPARATE |
1.8 |
1.8 |
8 |
SMALL OUTLINE |
SOP8,.25 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
1.7 V |
-40 Cel |
MATTE TIN |
DUAL |
1, (3 LINE) |
R-PDSO-G8 |
3 |
1.95 V |
1.75 mm |
16 MHz |
3.91 mm |
Not Qualified |
262144 bit |
1.7 V |
e3 |
30 |
260 |
.0000005 Amp |
4.9 mm |
|||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
524288 words |
16 |
SMALL OUTLINE, THIN PROFILE |
8 |
.5 mm |
85 Cel |
512KX16 |
512K |
-40 Cel |
DUAL |
R-PDSO-G48 |
3 |
2.7 V |
1.2 mm |
12 mm |
8388608 bit |
2.4 V |
ACCESS TIME 55NS AVAILABLE WITH 2.7V TO 3.6V SUPPLY RANGE |
18.4 mm |
70 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
40 mA |
1048576 words |
COMMON |
3/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP48,.8,20 |
8 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
2 V |
-40 Cel |
DUAL |
R-PDSO-G48 |
2 |
Not Qualified |
16777216 bit |
260 |
70 ns |
||||||||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
30 mA |
524288 words |
COMMON |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
.8 mm |
85 Cel |
3-STATE |
512KX16 |
512K |
1.5 V |
-40 Cel |
DUAL |
1 |
R-PDSO-G44 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
8388608 bit |
2.4 V |
IT ALSO OPERATES AT 2.4 TO 2.7 V SUPPLY VOLTAGE, IT ALSO HAVE ACCESS TIME 55 NS |
YES |
.00001 Amp |
18.41 mm |
45 ns |
||||||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
35 mA |
1048576 words |
COMMON |
3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
.75 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
1.5 V |
-40 Cel |
BOTTOM |
1 |
R-PBGA-B48 |
3 |
3.6 V |
1.2 mm |
7.5 mm |
16777216 bit |
2.7 V |
CAN ALSO BE CONFIGURED AS 2M X 8 |
YES |
.000008 Amp |
8.5 mm |
45 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.