STANDARD SRAM SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
IDT71V424L15PHGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	145 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	e3	30	260		.01 Amp	18.41 mm	15 ns
IDT71V424L15YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE				1.27 mm	85 Cel		512KX8	512K		-40 Cel	MATTE TIN	DUAL		R-PDSO-J36		3.6 V	3.683 mm		10.16 mm	Not Qualified	4194304 bit	3 V	e3					23.495 mm	15 ns
IDT71V424S12YGI8	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	36	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	SMALL OUTLINE				1.27 mm	85 Cel		512KX8	512K		-40 Cel	MATTE TIN	DUAL		R-PDSO-J36		3.6 V	3.683 mm		10.16 mm	Not Qualified	4194304 bit	3 V	e3					23.495 mm	12 ns
IDT71V424S15PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	524288 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	e3	30	260		.02 Amp	18.41 mm	15 ns
IS61C1024AL-12KLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-J32		5.5 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V					.00045 Amp	20.95 mm	12 ns
IS61LV51216-10TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	110 mA	524288 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	512KX16	512K	3.14 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.63 V	1.2 mm		10.16 mm	Not Qualified	8388608 bit	3.135 V	e3	10	260		.025 Amp	18.415 mm	10 ns
IS61WV20488BLL-10TLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	2097152 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	2MX8	2M	1.2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	2.4 V	e3	10	260		.025 Amp	18.41 mm	10 ns
IS61WV20488BLL-10TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	2097152 words	COMMON		2.5/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	2MX8	2M	1.2 V	-40 Cel		DUAL		R-PDSO-G44						Not Qualified	16777216 bit						.025 Amp		10 ns
IS61WV51232BLL-10BI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	90	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		524288 words		3.3		32	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel		512KX32	512K		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B90	3	3.6 V	1.45 mm		8 mm	Not Qualified	16777216 bit	2.4 V	e0					13 mm	10 ns
IS62C1024AL-35TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm		8 mm	Not Qualified	1048576 bit	4.5 V	e3	30	260			18.4 mm	35 ns
IS62C5128BL-45QLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	5.5 V	3.12 mm		11.305 mm	Not Qualified	4194304 bit	4.5 V	e3	30	260		.000015 Amp	20.495 mm	45 ns
IS62C5128BL-45QLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3					Not Qualified	4194304 bit		e3	30	260		.000015 Amp		45 ns
IS62LV256AL-45ULI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	12 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOP28,.45		SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G28		3.63 V	2.84 mm		8.405 mm	Not Qualified	262144 bit	2.97 V	e3	10	260		.00002 Amp	18.11 mm	45 ns
IS62WV1288BLL-55QLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE				1.27 mm	85 Cel		128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	3 mm		11.305 mm	Not Qualified	1048576 bit	2.5 V	e3	30	260			20.445 mm	55 ns
IS63LV1024L-12JL	Integrated Silicon Solution	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	90 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	MATTE TIN	DUAL		R-PDSO-J32		3.6 V	3.56 mm		7.62 mm	Not Qualified	1048576 bit	3 V	e3	10	260		.0015 Amp	20.955 mm	12 ns
IS64WV102416BLL-10MA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	140 mA	1048576 words	COMMON	3.3	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	125 Cel	3-STATE	1MX16	1M	1.2 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm		9 mm	Not Qualified	16777216 bit	2.4 V	e0				.05 Amp	11 mm	10 ns
IS64WV204816BLL-12BLA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		2097152 words		3		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	125 Cel		2MX16	2M		-40 Cel		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		6 mm		33554432 bit	2.4 V		NOT SPECIFIED	NOT SPECIFIED			8 mm	12 ns
IS64WV204816BLL-12BLA3-TR	Integrated Silicon Solution	STANDARD SRAM																																											NOT SPECIFIED	NOT SPECIFIED
IS66WVS1M8BLL-104NLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	1048576 words	COMMON	3		8	SMALL OUTLINE	SOP8,.25			1.27 mm	85 Cel		1MX8	1M	2.7 V	-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.75 mm	104 MHz	3.9 mm		8388608 bit	2.7 V				NO	.0002 Amp	4.9 mm
K6T1008C2E-GF55	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	3 mm		11.43 mm	Not Qualified	1048576 bit	4.5 V	e0				.00001 Amp	20.47 mm	55 ns
MB8464A-10LPSK	Fujitsu Semiconductor America	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE				2.54 mm	70 Cel		8KX8	8K	2 V	0 Cel		DUAL	1	R-PDIP-T28		5.5 V	5.25 mm		7.62 mm	Not Qualified	65536 bit	4.5 V				YES		35.36 mm	100 ns
MB8464A-10LP-SK	Fujitsu	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28						Not Qualified	65536 bit		e0				.000025 Amp		100 ns
NTE2114	Nte Electronics	STANDARD SRAM	COMMERCIAL	18	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3		SRAMs	2.54 mm	70 Cel	3-STATE	1KX4	1K	5 V	0 Cel	TIN LEAD	DUAL		R-PDIP-T18		5.25 V				Not Qualified	4096 bit	4.75 V	e0				.1 Amp		300 ns
R1LP5256ESP-5SI#B1	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE					85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-G28	3	5.5 V					262144 bit	4.5 V							55 ns
R1LV0416CSB-5SI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		2.5		16	SMALL OUTLINE					85 Cel		256KX16	256K		-40 Cel		DUAL		R-PDSO-G44		3.6 V				Not Qualified	4194304 bit	2.2 V							55 ns
R1LV0416CSB-7LI#S0	Renesas Technology	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	COMMON		2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		DUAL		R-PDSO-G44						Not Qualified	4194304 bit								70 ns
R1LV0416DSB-7LI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel	TIN BISMUTH	DUAL		R-PDSO-G44	3	3.6 V				Not Qualified	4194304 bit	2.7 V	e6		260		.00001 Amp		70 ns
R1LV0416DSB-7LI#B0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		DUAL		R-PDSO-G44	2	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	2.7 V					.00001 Amp	18.41 mm	70 ns
R1LV0416DSB-7LI#S0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	COMMON	3	3/3.3	16	SMALL OUTLINE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	2 V	-40 Cel		DUAL		R-PDSO-G44	2	3.6 V				Not Qualified	4194304 bit	2.7 V					.00001 Amp		70 ns
R1LV1616RSA-7SI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	1048576 words	COMMON	3	3/3.3	16	SMALL OUTLINE	TSSOP48,.8,20	8	SRAMs	.5 mm	85 Cel	3-STATE	1MX16	1M	2.7 V	-40 Cel		DUAL		R-PDSO-G48		3.6 V				Not Qualified	16777216 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED		.000006 Amp		70 ns
R1LV3216RSA-5SI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	2097152 words	COMMON	3	3/3.3	16	SMALL OUTLINE	TSSOP48,.8,20	8	SRAMs	.5 mm	85 Cel	3-STATE	2MX16	2M	2.7 V	-40 Cel		DUAL		R-PDSO-G48	1	3.6 V				Not Qualified	33554432 bit	2.7 V					.000012 Amp		70 ns
R1LV3216RSA-5SI#B1	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		3		16	SMALL OUTLINE, THIN PROFILE		8			85 Cel		2MX16	2M		-40 Cel		DUAL		R-PDSO-G48	3	3.6 V					33554432 bit	2.7 V							55 ns
R1LV3216RSA-5SI#S0	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	2097152 words	COMMON	3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	SRAMs	.5 mm	85 Cel	3-STATE	2MX16	2M	2 V	-40 Cel		DUAL		R-PDSO-G48	2	3.6 V				Not Qualified	33554432 bit	2.7 V			260		.000012 Amp		55 ns
R1LV3216RSA-5SI#S1	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		3		16	SMALL OUTLINE, THIN PROFILE		8			85 Cel		2MX16	2M		-40 Cel		DUAL		R-PDSO-G48	3	3.6 V					33554432 bit	2.7 V							55 ns
TC551001CF-70L	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL	1	R-PDSO-G32		5.5 V	2.8 mm		10.7 mm	Not Qualified	1048576 bit	4.5 V				YES	.00001 Amp	20.6 mm	70 ns
23LC1024-E/SN	Microchip Technology	STANDARD SRAM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON/SEPARATE	5	3/5	8	SMALL OUTLINE	SOP8,.23		SRAMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	2.5 V	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.75 mm	16 MHz	3.9 mm	Not Qualified	1048576 bit	2.5 V	e3	40	260	NO	.00002 Amp	4.9 mm
71V016SA10PHGI	Renesas Electronics	STANDARD SRAM		44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	170 mA	65536 words	COMMON	3.3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32			.8 mm	85 Cel	3-STATE	64KX16	64K	3.15 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL	1	R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm		1048576 bit	3.15 V	e3	30	260	YES	.01 Amp	18.41 mm	10 ns
AS6C4008A-55ZIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel		512KX8	512K		-40 Cel		DUAL		R-PDSO-G32	3	3.6 V	1.2 mm		11.76 mm		4194304 bit	2.7 V	e3/e6	40	260			20.95 mm	55 ns
AS6C4008A-55ZINTR	Alliance Memory	STANDARD SRAM																																		3
AS7C1024B-15JCNTR	Alliance Memory	STANDARD SRAM	COMMERCIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE				1.27 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDSO-J32	3	5.5 V	3.7084 mm		10.16 mm		1048576 bit	4.5 V						20.995 mm	15 ns
AS7C31026B-12TCN	Alliance Memory	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	65536 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	64KX16	64K	3 V	0 Cel		DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V	e3/e6				.005 Amp	18.415 mm	12 ns
AS7C316096A-10TINTR	Alliance Memory	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	160 mA	2097152 words	COMMON	3	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		SRAMs	.5 mm	85 Cel	3-STATE	2MX8	2M	1.5 V	-40 Cel		DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	16777216 bit	2.7 V	e3/e6				.04 Amp	18.4 mm	10 ns
AS7C351232-10BIN	Alliance Memory	STANDARD SRAM	INDUSTRIAL	90	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		524288 words		3.3		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		512KX32	512K		-40 Cel		BOTTOM		R-PBGA-B90	3	3.6 V	1.2 mm		8 mm		16777216 bit	2.7 V						13 mm	10 ns
AS7C351232-10BINTR	Alliance Memory	STANDARD SRAM	INDUSTRIAL	90	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		524288 words		3.3		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		512KX32	512K		-40 Cel		BOTTOM		R-PBGA-B90	3	3.6 V	1.2 mm		8 mm		16777216 bit	2.7 V						13 mm	10 ns
BS62LV256TIP55	Brilliance Semiconductor	STANDARD SRAM	INDUSTRIAL	28	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE, THIN PROFILE				.55 mm	85 Cel		32KX8	32K		-40 Cel		DUAL		R-PDSO-G28		5.5 V	1.2 mm		8 mm	Not Qualified	262144 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED			11.8 mm	55 ns
CY62128ELL-45SXAT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	5.5 V	2.997 mm		11.303 mm	Not Qualified	1048576 bit	4.5 V	e4	20	260		.000004 Amp	20.4465 mm	45 ns
CY62167GN30-45ZXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel		1MX16	1M		-40 Cel	PURE TIN	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm		16777216 bit	2.2 V			260			18.4 mm	45 ns
CY7C1009D-10VXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	PURE TIN	DUAL		R-PDSO-J32	3	5.5 V	3.556 mm		7.5819 mm	Not Qualified	1048576 bit	4.5 V		30	260		.003 Amp	20.828 mm	10 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.