Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
25 mA |
524288 words |
COMMON |
3 |
2.5/3.3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
512KX16 |
512K |
1.5 V |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
Not Qualified |
8388608 bit |
2.2 V |
e0 |
220 |
YES |
.000008 Amp |
8 mm |
45 ns |
|||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
37 mA |
1048576 words |
COMMON |
3 |
2.5/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.8,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
1.5 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G48 |
3 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
16777216 bit |
2.2 V |
CONFIGURABLE AS 2M X 8 ALSO |
e4 |
20 |
260 |
.00001 Amp |
18.4 mm |
45 ns |
|||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
8 |
.75 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
16777216 bit |
2.2 V |
e1 |
30 |
260 |
8 mm |
45 ns |
||||||||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
2.794 mm |
7.5057 mm |
Not Qualified |
262144 bit |
4.5 V |
e4 |
20 |
260 |
17.9324 mm |
70 ns |
|||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
1.27 mm |
85 Cel |
128KX8 |
128K |
-40 Cel |
DUAL |
R-PDSO-G32 |
3.63 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
2.97 V |
20.95 mm |
15 ns |
||||||||||||||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
32 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
80 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP32,.46 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
3 V |
-40 Cel |
Matte Tin (Sn) |
DUAL |
R-PDSO-G32 |
3 |
3.63 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
2.97 V |
e3 |
20 |
260 |
.005 Amp |
20.95 mm |
10 ns |
||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
48 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3.3 |
16 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
256KX16 |
256K |
-40 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1.2 mm |
7 mm |
Not Qualified |
4194304 bit |
3 V |
e0 |
8.5 mm |
10 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
40 mA |
262144 words |
COMMON |
1.8 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G44 |
3 |
2.2 V |
1.194 mm |
66.7 MHz |
10.16 mm |
4194304 bit |
1.65 V |
e4 |
260 |
YES |
.008 Amp |
18.415 mm |
15 ns |
|||||||||||||||
|
Rochester Electronics |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
100 mA |
524288 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
512KX10 |
512K |
3 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.194 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e4 |
20 |
260 |
.01 Amp |
18.415 mm |
10 ns |
||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
275 mA |
2097152 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
2MX8 |
2M |
3 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G54 |
1 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
16777216 bit |
3 V |
e0 |
.05 Amp |
22.415 mm |
10 ns |
|||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
170 mA |
1048576 words |
COMMON |
3.3 |
36 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
1 mm |
85 Cel |
3-STATE |
1MX36 |
1M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B165 |
3 |
3.6 V |
1.4 mm |
133 MHz |
15 mm |
37748736 bit |
3.135 V |
FLOW-THROUGH |
e1 |
260 |
YES |
.08 Amp |
17 mm |
6.5 ns |
||||||||||||||
Rochester Electronics |
STANDARD SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
32KX8 |
32K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J28 |
5.5 V |
3.556 mm |
7.5 mm |
Not Qualified |
262144 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
e0 |
17.907 mm |
15 ns |
|||||||||||||||||||||||
Samsung |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
75 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
3 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e0 |
240 |
.005 Amp |
18.41 mm |
10 ns |
||||||||||||||
|
Samsung |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
20 mA |
131072 words |
COMMON |
3/3.3 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
DUAL |
R-PDSO-G32 |
3 |
Not Qualified |
1048576 bit |
260 |
70 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
AUTOMOTIVE |
32 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP32,.56,20 |
SRAMs |
.5 mm |
125 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G32 |
3 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
1048576 bit |
4.5 V |
e4 |
20 |
260 |
.00003 Amp |
11.8 mm |
55 ns |
||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
25 mA |
524288 words |
COMMON |
1.8 |
1.8/2 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
512KX16 |
512K |
1 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
1 |
R-PBGA-B48 |
3 |
2.25 V |
1 mm |
6 mm |
Not Qualified |
8388608 bit |
1.65 V |
e1 |
20 |
260 |
YES |
.000009 Amp |
8 mm |
55 ns |
||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
30 mA |
1048576 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.8,20 |
8 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G48 |
3 |
5.5 V |
1.2 mm |
12 mm |
Not Qualified |
16777216 bit |
4.5 V |
e3 |
30 |
260 |
18.4 mm |
45 ns |
||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
260 mA |
8192 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.45 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
8KX8 |
8K |
4.5 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
2.794 mm |
7.5057 mm |
Not Qualified |
65536 bit |
4.5 V |
e4 |
20 |
260 |
.03 Amp |
17.9324 mm |
55 ns |
||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
44 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
3.3 |
16 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
128KX16 |
128K |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G44 |
3.6 V |
1.6 mm |
10 mm |
Not Qualified |
2097152 bit |
3 V |
e0 |
10 mm |
12 ns |
||||||||||||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
AUTOMOTIVE |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
120 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
125 Cel |
3-STATE |
256KX16 |
256K |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.194 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e4 |
20 |
260 |
18.415 mm |
12 ns |
|||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
175 mA |
1048576 words |
COMMON |
3.3 |
3.3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
2 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
8 mm |
Not Qualified |
16777216 bit |
3 V |
e1 |
40 |
260 |
.025 Amp |
9.5 mm |
10 ns |
||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
450 mA |
2097152 words |
COMMON |
2.5 |
2.5 |
36 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
2MX36 |
2M |
2.375 V |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
1 |
R-PBGA-B165 |
3 |
2.625 V |
1.4 mm |
200 MHz |
15 mm |
Not Qualified |
75497472 bit |
2.375 V |
e1 |
20 |
260 |
YES |
.12 Amp |
17 mm |
3 ns |
|||||||||
|
Samsung |
STANDARD SRAM |
INDUSTRIAL |
48 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
25 mA |
1048576 words |
COMMON |
3 |
3 |
16 |
GRID ARRAY, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
1.5 V |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
3.3 V |
1 mm |
6 mm |
Not Qualified |
16777216 bit |
2.7 V |
.000015 Amp |
7 mm |
70 ns |
|||||||||||||||||
Samsung |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
25 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
128KX8 |
128K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
3 mm |
11.43 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.00001 Amp |
20.47 mm |
55 ns |
||||||||||||||||
Motorola |
STANDARD SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
8 |
IN-LINE |
2.54 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-PDIP-T24 |
5.5 V |
4.44 mm |
7.62 mm |
Not Qualified |
16384 bit |
4.5 V |
e0 |
YES |
31.69 mm |
45 ns |
|||||||||||||||||||||
Toshiba |
STANDARD SRAM |
COMMERCIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G32 |
5.5 V |
2.8 mm |
10.7 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
20.6 mm |
70 ns |
||||||||||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
70 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
DUAL |
1 |
R-PDSO-G28 |
5.5 V |
2.7 mm |
8.8 mm |
Not Qualified |
262144 bit |
4.5 V |
YES |
.000015 Amp |
18.5 mm |
80 ns |
||||||||||||||||
Toshiba |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
35 mA |
524288 words |
COMMON |
3 |
2.5/3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSSOP48,.8,20 |
8 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
512KX16 |
512K |
1.5 V |
-40 Cel |
DUAL |
R-PDSO-G48 |
3.6 V |
1.2 mm |
12 mm |
Not Qualified |
8388608 bit |
2.3 V |
NOT SPECIFIED |
NOT SPECIFIED |
18.4 mm |
70 ns |
||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
36 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
18 mA |
262144 words |
COMMON |
3 |
2.5/3.3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA36,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
256KX8 |
256K |
1.5 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B36 |
3 |
3.6 V |
1 mm |
6 mm |
Not Qualified |
2097152 bit |
2.2 V |
e1 |
20 |
260 |
.000004 Amp |
8 mm |
45 ns |
||||||||||||
Rochester Electronics |
STANDARD SRAM |
INDUSTRIAL |
32 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
20 mA |
524288 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP32,.56 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
512KX8 |
512K |
2 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G32 |
3 |
5.5 V |
2.997 mm |
11.303 mm |
Not Qualified |
4194304 bit |
4.5 V |
e4 |
20 |
260 |
.000007 Amp |
20.4465 mm |
55 ns |
|||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
512KX16 |
512K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
8388608 bit |
2.2 V |
e1 |
260 |
8 mm |
45 ns |
||||||||||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
524288 words |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
512KX16 |
512K |
-40 Cel |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1 mm |
6 mm |
8388608 bit |
2.2 V |
NOT SPECIFIED |
NOT SPECIFIED |
8 mm |
45 ns |
||||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
25 mA |
1048576 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
1MX8 |
1M |
2 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
1 |
R-PDSO-G44 |
3 |
5.5 V |
1.194 mm |
10.16 mm |
Not Qualified |
8388608 bit |
4.5 V |
e4 |
20 |
260 |
YES |
.000008 Amp |
18.415 mm |
45 ns |
||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
36 mA |
1048576 words |
COMMON |
3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP48,47,20 |
8 |
.5 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
1 V |
-40 Cel |
MATTE TIN |
DUAL |
1 |
R-PDSO-G48 |
3 |
3.6 V |
1.2 mm |
12 mm |
16777216 bit |
2.2 V |
e3 |
YES |
.000016 Amp |
18.4 mm |
45 ns |
||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
1.8 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
8 |
.75 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
2.2 V |
1 mm |
6 mm |
16777216 bit |
1.65 V |
e1 |
30 |
260 |
8 mm |
55 ns |
||||||||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
2.794 mm |
7.5057 mm |
Not Qualified |
262144 bit |
4.5 V |
e4 |
20 |
260 |
17.9324 mm |
70 ns |
|||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G28 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
YES |
11.8 mm |
70 ns |
|||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSSOP28,.53,22 |
SRAMs |
.55 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
4.5 V |
e4 |
30 |
260 |
.00001 Amp |
11.8 mm |
55 ns |
||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.45 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
2.794 mm |
7.5057 mm |
Not Qualified |
262144 bit |
4.5 V |
e4 |
20 |
260 |
.00001 Amp |
17.9324 mm |
70 ns |
||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
AUTOMOTIVE |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
30 mA |
32768 words |
COMMON |
3 |
3/3.3 |
8 |
SMALL OUTLINE |
SOP28,.45 |
SRAMs |
1.27 mm |
125 Cel |
3-STATE |
32KX8 |
32K |
1.4 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G28 |
3 |
3.6 V |
2.794 mm |
7.5057 mm |
Not Qualified |
262144 bit |
2.7 V |
e4 |
20 |
260 |
.00005 Amp |
17.9324 mm |
70 ns |
||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
95 mA |
131072 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
128KX16 |
128K |
3 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.194 mm |
10.16 mm |
Not Qualified |
2097152 bit |
3 V |
e4 |
20 |
260 |
.01 Amp |
18.415 mm |
12 ns |
||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
130 mA |
65536 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
4.5 V |
0 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G44 |
3 |
5.5 V |
1.194 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e4 |
20 |
260 |
.01 Amp |
18.415 mm |
12 ns |
||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
90 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
3 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G44 |
3 |
3.63 V |
1.194 mm |
10.16 mm |
Not Qualified |
1048576 bit |
2.97 V |
e4 |
20 |
260 |
.005 Amp |
18.415 mm |
10 ns |
||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
275 mA |
131072 words |
COMMON |
3.3 |
3.3 |
24 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
128KX24 |
128K |
3 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.45 mm |
14 mm |
Not Qualified |
3145728 bit |
3 V |
e0 |
.015 Amp |
20 mm |
10 ns |
|||||||||||||||
Rochester Electronics |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3.3 |
16 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
256KX16 |
256K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-J44 |
3.6 V |
3.7592 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e0 |
28.575 mm |
12 ns |
||||||||||||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
90 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
3 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.194 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e4 |
20 |
260 |
.01 Amp |
18.415 mm |
15 ns |
||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
1.8 |
16 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
PURE TIN |
DUAL |
R-PDSO-G54 |
3 |
2.2 V |
1.2 mm |
10.16 mm |
16777216 bit |
1.65 V |
30 |
260 |
22.415 mm |
15 ns |
||||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
85 Cel |
2MX8 |
2M |
-40 Cel |
PURE TIN |
DUAL |
R-PDSO-G54 |
3 |
5.5 V |
1.2 mm |
10.16 mm |
16777216 bit |
4.5 V |
260 |
22.415 mm |
10 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.