STANDARD SRAM SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C1019DV33-10BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	3.3	3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm	Not Qualified	1048576 bit	3 V		e1	20	260		.003 Amp	8 mm	10 ns
CY7C1019DV33-10ZSXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	1048576 bit	3 V		e3	20	260		.003 Amp	20.95 mm	10 ns
CY7C1021BN-15VXC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE	SOJ44,.44	SRAMs	1.27 mm	70 Cel		3-STATE	64KX16	64K	4.5 V	0 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J44	3	5.5 V	3.7592 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e4	40	260		.01 Amp	28.575 mm	15 ns
CY7C1021BN-15VXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		16	SMALL OUTLINE			1.27 mm	85 Cel			64KX16	64K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-J44		5.5 V	3.7592 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e4					28.575 mm	15 ns
CY7C1021BN-15ZSXET	Cypress Semiconductor	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	125 Cel		3-STATE	64KX16	64K	4.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	5.5 V	1.194 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e4	20	260		.015 Amp	18.415 mm	15 ns
CY7C1049GN30-10ZSXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	524288 words	COMMON	3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		.8 mm	85 Cel		3-STATE	512KX8	512K	1 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G44	3	3.6 V	1.194 mm	10.16 mm		4194304 bit	2.2 V		e4		260	YES	.008 Amp	18.415 mm	10 ns
CY7C1061BV33-8ZXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			1MX16	1M		-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	3 V		e3	30	260			22.415 mm	8 ns
HM1-6514-8	Intersil	STANDARD SRAM	MILITARY	18	DIP	RECTANGULAR	CERAMIC	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	14 mA	1024 words	COMMON	5	5	4	IN-LINE	DIP18,.3	SRAMs	2.54 mm	125 Cel		3-STATE	1KX4	1K	2 V	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18					Not Qualified	4096 bit			e0				.000025 Amp		320 ns
IDT71124S12YGI	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J32	3	5.5 V	3.683 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260		.01 Amp	20.955 mm	12 ns
IDT71124S12YGI8	Integrated Device Technology	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	160 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	85 Cel		3-STATE	128KX8	128K	4.5 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-J32	3	5.5 V	3.683 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e3	30	260		.01 Amp	20.955 mm	12 ns
IDT71V416L12PHGI	Renesas Electronics	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	3 V	-40 Cel	Matte Tin (Sn) - annealed	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e3	30	260		.01 Amp	18.41 mm	12 ns
IS61LV25616AL-10BI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	ASYNCHRONOUS	100 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM		R-PBGA-B48					Not Qualified	4194304 bit							.015 Amp		10 ns
IS61LV25616AL-10BLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	ASYNCHRONOUS	100 mA	262144 words	COMMON	3.3	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel		BOTTOM		R-PBGA-B48					Not Qualified	4194304 bit							.015 Amp		10 ns
IS61LV25616AL-10TL-TR	Integrated Silicon Solution	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	2 V	0 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.63 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3.135 V		e3	40	260		.01 Amp	18.415 mm	10 ns
IS62WV10248EBLL-45TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words		3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			1MX8	1M		-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm		8388608 bit	2.2 V			NOT SPECIFIED	NOT SPECIFIED			18.41 mm	45 ns
IS62WV12816BLL-55BLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	3	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	128KX16	128K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1.2 mm	6 mm	Not Qualified	2097152 bit	2.5 V		e1	10	260		.00001 Amp	8 mm	55 ns
IS62WV1288BLL-55TLI-TR	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		3		8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel			128KX8	128K		-40 Cel	MATTE TIN	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm	8 mm	Not Qualified	1048576 bit	2.5 V		e3					18.4 mm	55 ns
IS62WV2568BLL-45HLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	262144 words	COMMON		3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	256KX8	256K	1 V	-40 Cel		DUAL		R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	2097152 bit	2.5 V						.00001 Amp	18.4 mm	45 ns
IS62WV2568EBLL-45HLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		8	SMALL OUTLINE, THIN PROFILE				85 Cel			256KX8	256K		-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G32	3	3.6 V				2097152 bit	2.2 V		e3	10	260				45 ns
IS64C1024AL-15KA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	J BEND	PARALLEL	ASYNCHRONOUS	55 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	125 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-J32	3	5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e0				.0005 Amp	20.95 mm	15 ns
IS64C1024AL-15KA3-TR	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	J BEND	PARALLEL	ASYNCHRONOUS	55 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44	SRAMs	1.27 mm	125 Cel		3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-J32					Not Qualified	1048576 bit							.0005 Amp		15 ns
IS64C1024AL-15KLA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel			128KX8	128K		-40 Cel		DUAL		R-PDSO-J32		5.5 V	3.76 mm	10.16 mm		1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			20.95 mm	15 ns
IS64C1024AL-15KLA3-TR	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	125 Cel			128KX8	128K		-40 Cel		DUAL		R-PDSO-J32		5.5 V	3.76 mm	10.16 mm		1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			20.95 mm	15 ns
IS64C1024AL-15TA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20	SRAMs	.5 mm	125 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0				.0005 Amp	18.4 mm	15 ns
IS64C1024AL-15TA3-TR	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	J BEND	PARALLEL	ASYNCHRONOUS	55 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.34	SRAMs	1.27 mm	125 Cel		3-STATE	128KX8	128K	2 V	-40 Cel		DUAL		R-PDSO-J32					Not Qualified	1048576 bit							.0005 Amp		15 ns
IS64C1024AL-15TLA3	Integrated Silicon Solution	STANDARD SRAM	AUTOMOTIVE	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	131072 words	COMMON	5		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		.5 mm	125 Cel		3-STATE	128KX8	128K	2 V	-40 Cel		DUAL	1	R-PDSO-G32		5.5 V	1.2 mm	8 mm		1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	YES	.0005 Amp	18.4 mm	15 ns
TC551001BFL-70L	Toshiba	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		8	SMALL OUTLINE			1.27 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	2.8 mm	10.7 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		20.6 mm	70 ns
GS74116AGP-8IT	Gsi Technology	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	140 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	3 V	-40 Cel	PURE MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V				260		.02 Amp	18.41 mm	8 ns
IDT71256SA20Y	Integrated Device Technology	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	145 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.34	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	4.5 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28	3	5.5 V	3.556 mm	7.5184 mm	Not Qualified	262144 bit	4.5 V		e0	30	225	YES	.015 Amp	17.9324 mm	20 ns
IS61NLP102418B-200TQLI	Integrated Silicon Solution	STANDARD SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		1048576 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	85 Cel			1MX18	1M		-40 Cel		QUAD		R-PQFP-G100		3.465 V	1.6 mm	14 mm		18874368 bit	3.135 V			NOT SPECIFIED	NOT SPECIFIED			20 mm	3 ns
CY62128ELL-45ZAXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	SRAMs	.5 mm	85 Cel		3-STATE	128KX8	128K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e4	20	260		.000004 Amp	11.8 mm	45 ns
CY62148G-45SXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		5		8	SMALL OUTLINE			1.27 mm	85 Cel			512KX8	512K		-40 Cel	PURE TIN	DUAL		R-PDSO-G32	3	5.5 V	2.997 mm	11.303 mm		4194304 bit	4.5 V				260			20.446 mm	45 ns
SN74LS219AN	Texas Instruments	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16 words				4	IN-LINE	DIP16,.3	SRAMs	2.54 mm	70 Cel		3-STATE	16X4	16		0 Cel		DUAL		R-PDIP-T16					Not Qualified
K6X4008C1F-UF55	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel		DUAL		R-PDSO-G32		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V						.000012 Amp	20.95 mm	55 ns
KM616V4002BT-12	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	230 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		3-STATE	256KX16	256K	3 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE INPUTS/OUTPUTS	e0			YES	.01 Amp	18.41 mm	12 ns
KM62256DLG-7	Samsung	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	3 mm	8.38 mm	Not Qualified	262144 bit	4.5 V		e0				.000015 Amp	18.29 mm	70 ns
CY62148BLL-55ZC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	SRAMs	1.27 mm	70 Cel		3-STATE	512KX8	512K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.00002 Amp	20.95 mm	55 ns
CY7C1069G30-10ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	54	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words		3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			2MX8	2M		-40 Cel	PURE TIN	DUAL		R-PDSO-G54	3	3.6 V	1.2 mm	10.16 mm		16777216 bit	2.2 V			30	260			22.415 mm	10 ns
K6R4008C1D-UI10	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	512KX8	512K	4.5 V	-40 Cel	TIN SILVER COPPER	DUAL		R-PDSO-G44	3	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e1		260		.005 Amp	18.41 mm	10 ns
KM62256ALG-10	Samsung	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5	SRAMs	1.27 mm	70 Cel		3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	3 mm	8.38 mm	Not Qualified	262144 bit	4.5 V	BATTERY BACKUP	e0			YES	.00005 Amp	18.29 mm	100 ns
CY62157EV30LL-45BVIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	COMMON	3	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		3-STATE	512KX16	512K	1.5 V	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm	Not Qualified	8388608 bit	2.2 V		e0		260	YES	.000008 Amp	8 mm	45 ns
CY7C1041GN30-10BVJXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	45 mA	262144 words	COMMON	3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		.75 mm	85 Cel		3-STATE	256KX16	256K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B48	3	3.6 V	1 mm	6 mm		4194304 bit	2.2 V		e1	30	260	YES	.008 Amp	8 mm	10 ns
CY7C1049DV33-10ZSXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	90 mA	524288 words	COMMON	3.3		8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		.8 mm	85 Cel	NO	3-STATE	512KX8	512K	3 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G44	3	3.6 V	1.194 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e4	20	260	YES	.01 Amp	18.415 mm	10 ns
CY7C1051H30-10ZSXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	110 mA	524288 words	COMMON	3		16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		.8 mm	85 Cel		3-STATE	512KX16	512K	1 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G44	3	3.6 V	1.194 mm	10.16 mm		8388608 bit	2.2 V		e4			YES	.03 Amp	18.415 mm	10 ns
CY7C1061G18-15BV1XI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		1048576 words		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.75 mm	85 Cel			1MX16	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	2.2 V	1 mm	6 mm		16777216 bit	1.65 V		e1		260			8 mm	15 ns
K6R4016V1C-TI10	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	175 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		3-STATE	256KX16	256K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	3 V		e0				.0007 Amp	18.41 mm	10 ns
K6T1008C2E-DB70	Samsung	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	SRAMs	2.54 mm	70 Cel		3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDIP-T32	1	5.5 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V							41.91 mm	70 ns
K6X4008C1F-GF55	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56	SRAMs	1.27 mm	85 Cel		3-STATE	512KX8	512K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3	5.5 V	3 mm	11.43 mm	Not Qualified	4194304 bit	4.5 V		e0		240		.000012 Amp	20.47 mm	55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.