STANDARD SRAM SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CY7C1399BN-12ZXC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	55 mA	32768 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		SRAMs	.55 mm	70 Cel	3-STATE	32KX8	32K	3 V	0 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	DUAL		R-PDSO-G28	3	3.6 V	1.2 mm	8 mm	Not Qualified	262144 bit	3 V		e4	30	260		.0005 Amp	11.8 mm	12 ns
CY7C192-25VC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	115 mA	65536 words	SEPARATE	5	5	4	SMALL OUTLINE	SOJ28,.34		SRAMs	1.27 mm	70 Cel	3-STATE	64KX4	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J28		5.5 V	3.556 mm	7.5 mm	Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			NO	.015 Amp	17.907 mm	25 ns
K6F1616U6C-XF55	Samsung	STANDARD SRAM	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3	3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel		BOTTOM		R-PBGA-B48		3.3 V	1 mm	6 mm	Not Qualified	16777216 bit	2.7 V						.000015 Amp	7 mm	55 ns
K6R1008C1D-KI10	Samsung	STANDARD SRAM	INDUSTRIAL	32	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	75 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOJ32,.44		SRAMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	4.5 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	DUAL		R-PDSO-J32	3	5.5 V	3.76 mm	10.16 mm	Not Qualified	1048576 bit	4.5 V		e1	40	260		.005 Amp	20.95 mm	10 ns
K6R4016C1D-TC10	Samsung	STANDARD SRAM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	65 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	4.5 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.005 Amp	18.41 mm	10 ns
K6R4016C1D-UI10	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	75 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	4.5 V	-40 Cel	Tin/Bismuth (Sn97Bi3)	DUAL		R-PDSO-G44	3	5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e6	40	260		.005 Amp	18.41 mm	10 ns
K6R4016V1D-KI10	Samsung	STANDARD SRAM	INDUSTRIAL	44	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	75 mA	262144 words	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ44,.44		SRAMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	3 V	-40 Cel	TIN SILVER COPPER	DUAL		R-PDSO-J44	3				Not Qualified	4194304 bit			e1		260		.005 Amp		10 ns
K6T1008C2C-DB70	Samsung	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6		SRAMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel		DUAL		R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V							41.91 mm	70 ns
K6X4008C1F-VF55	Samsung	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0				.000012 Amp	20.95 mm	55 ns
K6X8008T2B-UF55	Samsung	STANDARD SRAM	INDUSTRIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	1MX8	1M	1.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G44	1				Not Qualified	8388608 bit			e3				.000015 Amp		55 ns
KM62256ALP-10	Samsung	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	BATTERY BACKUP	e0			YES	.00005 Amp	36.45 mm	100 ns
KM62256DLG-7L	Samsung	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL		R-PDSO-G28		5.5 V	3 mm	8.38 mm	Not Qualified	262144 bit	4.5 V		e0				.000003 Amp	18.29 mm	70 ns
KM681000BLG-7	Samsung	STANDARD SRAM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e0			YES	.00005 Amp	20.47 mm	70 ns
LH5268A-10LL	Sharp Corporation	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE				2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.2 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0			YES		36 mm	100 ns
MB81C78A-45PSK	Fujitsu Semiconductor America	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE				2.54 mm	70 Cel		8KX8	8K		0 Cel		DUAL	1	R-PDIP-T28		5.5 V	5.25 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	AUTOMATIC POWER-DOWN				YES		35.36 mm	45 ns
MB81C78A-45P-SK	Fujitsu	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	8192 words	COMMON	5	5	8	IN-LINE	DIP28,.3		SRAMs	2.54 mm	70 Cel	3-STATE	8KX8	8K		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T28					Not Qualified	65536 bit			e0				.015 Amp		45 ns
MCM60L64P10	Motorola	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE				2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0			YES		36.83 mm	100 ns
MCM60L64P12	Motorola	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE				2.54 mm	70 Cel	3-STATE	8KX8	8K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0			YES		36.83 mm	120 ns
TC551001APL-70	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE				2.54 mm	70 Cel		128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		42 mm	70 ns
TC551001APL-70L	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE				2.54 mm	70 Cel		128KX8	128K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T32		5.5 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			YES		42 mm	70 ns
TC551001BPL-70L	Toshiba	STANDARD SRAM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE				2.54 mm	70 Cel		128KX8	128K		0 Cel		DUAL		R-PDIP-T32		5.5 V	4.8 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V							42 mm	70 ns
21L02HPC	Fairchild Semiconductor	STANDARD SRAM	COMMERCIAL	16	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	SEPARATE	5		1	IN-LINE	DIP16,.3		SRAMs	2.54 mm	70 Cel	3-STATE	1KX1	1K		0 Cel	TIN LEAD	DUAL		R-PDIP-T16	2A	5.5 V			Not Qualified	1024 bit	4.5 V		e0						250 ns
5962-8866203MA	Defense Logistics Agency	STANDARD SRAM	MILITARY	28	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		32768 words		5		8	FLATPACK				1.27 mm	125 Cel		32KX8	32K		-55 Cel	TIN LEAD	DUAL		R-GDFP-F28		5.5 V	2.921 mm	12.446 mm	Qualified	262144 bit	4.5 V		e0					18.288 mm	55 ns
6206-100/BXAJC	Motorola	STANDARD SRAM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	4.5 V	-55 Cel	TIN LEAD	DUAL	1	R-CDIP-T28		5.5 V	5.84 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	AUTOMATIC POWER-DOWN	e0			YES	.02 Amp	37.145 mm	100 ns
93L412PC	Fairchild Semiconductor	STANDARD SRAM	COMMERCIAL	22	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words		5	5	4	IN-LINE	DIP22,.4		SRAMs	2.54 mm	70 Cel	OPEN-COLLECTOR	256X4	256		0 Cel	TIN LEAD	DUAL		R-PDIP-T22	2A				Not Qualified	1024 bit			e0						60 ns
93L422DMQB	National Semiconductor	STANDARD SRAM	MILITARY	22	DIP	RECTANGULAR	CERAMIC	NO		TTL	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	90 mA	256 words		5	5	4	IN-LINE	DIP22,.4		SRAMs	2.54 mm	125 Cel	3-STATE	256X4	256		-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T22					Not Qualified	1024 bit			e0						75 ns
AS7C4098-20TI	Alliance Semiconductor	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	180 mA	262144 words	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	85 Cel	3-STATE	256KX16	256K	4.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V		e0		240		.02 Amp	18.415 mm	20 ns
CY62126EV30LL-55BVXE	Infineon Technologies	STANDARD SRAM		48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30			.75 mm	125 Cel	3-STATE	64KX16	64K	1.5 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm		1048576 bit	2.2 V		e1	20	260	YES	.00003 Amp	8 mm	55 ns
CY62128BLL-70ZI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		SRAMs	.5 mm	85 Cel	3-STATE	128KX8	128K	2 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm	8 mm	Not Qualified	1048576 bit	4.5 V		e0					18.4 mm	70 ns
CY62136VLL-70BAI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	3	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	128KX16	128K	1 V	-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B48	3	3.6 V	1.2 mm	7 mm	Not Qualified	2097152 bit	2.7 V		e0				.0000075 Amp	7 mm	70 ns
CY62137FV30LL-55ZSXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	131072 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		SRAMs	.8 mm	125 Cel	3-STATE	128KX16	128K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G44	3	3.6 V	1.194 mm	10.16 mm	Not Qualified	2097152 bit	2.2 V		e4	20	260		.000012 Amp	18.415 mm	55 ns
CY62146DV30LL-70ZSXIT	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		262144 words		3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	85 Cel		256KX16	256K		-40 Cel	TIN	DUAL		R-PDSO-G44		3.6 V	1.194 mm	10.16 mm	Not Qualified	4194304 bit	2.2 V		e3					18.415 mm	70 ns
CY62146G30-45BVXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		262144 words		3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel		256KX16	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm		4194304 bit	2.2 V		e1		260			8 mm	45 ns
CY62147EV18LL-55BVXIT	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	1.8	1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	256KX16	256K	1 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	2.25 V	1 mm	6 mm	Not Qualified	4194304 bit	1.65 V		e1	20	260		.000005 Amp	8 mm	55 ns
CY62148DV30LL-70SXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		524288 words		3		8	SMALL OUTLINE				1.27 mm	85 Cel		512KX8	512K		-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G32	3	3.6 V	2.997 mm	11.303 mm	Not Qualified	4194304 bit	2.2 V		e4					20.4465 mm	70 ns
CY62148EV30LL-55SXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON	3	2.5/3.3	8	SMALL OUTLINE	SOP32,.56		SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	1.5 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL	1	R-PDSO-G32	3	3.6 V	2.997 mm	11.303 mm	Not Qualified	4194304 bit	2.2 V		e4	20	260	YES	.000007 Amp	20.4465 mm	55 ns
CY62148VLL-70ZI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	32	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3	2/3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		SRAMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	1 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G32	3	3.6 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	2.7 V	TTL COMPATIBLE INPUTS/OUTPUTS, LOW STANDBY POWER	e0				.0000055 Amp	20.95 mm	70 ns
CY62157DV30LL-55BVXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		SRAMs	.75 mm	85 Cel	3-STATE	512KX16	512K	1.5 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm	6 mm	Not Qualified	8388608 bit	2.2 V		e1	20	260		.000004 Amp	8 mm	55 ns
CY62157ELL-55BVXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	COMMON	5	5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	TSOP44,.46,32		SRAMs	.75 mm	125 Cel	3-STATE	512KX16	512K	2 V	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	5.5 V	1 mm	6 mm	Not Qualified	8388608 bit	4.5 V		e1	20	260		.00003 Amp	8 mm	55 ns
CY62167DV30LL-45ZI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	37 mA	1048576 words	COMMON	3	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		SRAMs	.5 mm	85 Cel	3-STATE	1MX16	1M	1.5 V	-40 Cel	TIN LEAD	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm	12 mm	Not Qualified	16777216 bit	2.2 V		e0				.00001 Amp	18.4 mm	45 ns
CY62167G30-55ZXET	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words	COMMON	3		16	SMALL OUTLINE, THIN PROFILE	TSOP48,47,20			.5 mm	85 Cel	3-STATE	1MX16	1M	1 V	-40 Cel	PURE TIN	DUAL	1	R-PDSO-G48	3	3.6 V	1.2 mm	12 mm		16777216 bit	2.2 V					YES		18.4 mm	55 ns
CY62177ESL-55ZXI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	45 mA	2097152 words	COMMON	3	2.5/3.3,5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	SRAMs	.5 mm	85 Cel	3-STATE	2MX16	2M	1.5 V	-40 Cel	MATTE TIN	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm	12 mm	Not Qualified	33554432 bit	2.2 V	ALSO OPERATES AT 5V SUPPLY	e3	20	260		.000017 Amp	18.4 mm	55 ns
CY62177EV18LL-70BAXI	Infineon Technologies	STANDARD SRAM	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		2097152 words		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	85 Cel		2MX16	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B48	3	2.25 V	1.2 mm	8 mm		33554432 bit	1.65 V		e1		260			9.5 mm	70 ns
CY62256L-70SNC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G28	1	5.5 V	2.794 mm	7.5057 mm	Not Qualified	262144 bit	4.5 V		e0	30	225	YES	.00002 Amp	17.9324 mm	70 ns
CY62256L-70SNI	Cypress Semiconductor	STANDARD SRAM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.5		SRAMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G28	1	5.5 V	2.794 mm	7.5057 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.00005 Amp	17.9324 mm	70 ns
CY62256LL-70PC	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		SRAMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	2 V	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T28		5.5 V	5.08 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0			YES	.000005 Amp	36.322 mm	70 ns
CY62256LL-70ZXCT	Cypress Semiconductor	STANDARD SRAM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5		8	SMALL OUTLINE, THIN PROFILE				.55 mm	70 Cel		32KX8	32K		0 Cel	MATTE TIN/NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28		5.5 V	1.2 mm	8 mm	Not Qualified	262144 bit	4.5 V		e3/e4					11.8 mm	70 ns
CY62256NLL-55SNXE	Cypress Semiconductor	STANDARD SRAM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE	SOP28,.45		SRAMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	2 V	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-G28	3	5.5 V	2.794 mm	7.5057 mm	Not Qualified	262144 bit	4.5 V		e4	20	260		.00001 Amp	17.9324 mm	55 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.