Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
3 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
2 V |
0 Cel |
DUAL |
1 |
R-PDSO-G28 |
3.6 V |
2.794 mm |
7.5057 mm |
Not Qualified |
262144 bit |
2.7 V |
AUTOMATIC POWER-DOWN |
YES |
18.3896 mm |
70 ns |
|||||||||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
3 |
8 |
SMALL OUTLINE, THIN PROFILE |
.55 mm |
85 Cel |
32KX8 |
32K |
-40 Cel |
DUAL |
R-PDSO-G28 |
3.6 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
2.7 V |
11.8 mm |
70 ns |
||||||||||||||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
100 mA |
8192 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOP28,.5 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDSO-G28 |
1 |
5.5 V |
2.794 mm |
7.5057 mm |
Not Qualified |
65536 bit |
4.5 V |
e0 |
YES |
.015 Amp |
17.9324 mm |
70 ns |
|||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
AUTOMOTIVE |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
16 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
125 Cel |
128KX16 |
128K |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.194 mm |
10.16 mm |
2097152 bit |
2.2 V |
e4 |
260 |
18.415 mm |
12 ns |
||||||||||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J32 |
2 |
5.5 V |
3.7592 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
20.955 mm |
15 ns |
|||||||||||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
85 mA |
131072 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
3 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J32 |
2 |
3.63 V |
3.7592 mm |
10.16 mm |
Not Qualified |
1048576 bit |
2.97 V |
e0 |
.005 Amp |
20.955 mm |
8 ns |
|||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
80 mA |
32768 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
32KX16 |
32K |
3 V |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G44 |
3 |
3.63 V |
1.194 mm |
10.16 mm |
Not Qualified |
524288 bit |
2.97 V |
e0 |
.005 Amp |
18.415 mm |
15 ns |
|||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
AUTOMOTIVE |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
85 mA |
32768 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
125 Cel |
3-STATE |
32KX16 |
32K |
3 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G44 |
3 |
3.63 V |
1.194 mm |
10.16 mm |
Not Qualified |
524288 bit |
2.97 V |
e4 |
20 |
260 |
.01 Amp |
18.415 mm |
15 ns |
|||||||||||
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
85 Cel |
64KX16 |
64K |
-40 Cel |
DUAL |
R-PDSO-G44 |
5.5 V |
1.194 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
18.415 mm |
15 ns |
||||||||||||||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
130 mA |
65536 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
4.5 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G44 |
3 |
5.5 V |
1.194 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e4 |
20 |
260 |
.0005 Amp |
18.415 mm |
15 ns |
||||||||||||
Rochester Electronics |
STANDARD SRAM |
COMMERCIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
65536 words |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
70 Cel |
64KX16 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G44 |
3.63 V |
1.2 mm |
10.16 mm |
Not Qualified |
1048576 bit |
2.97 V |
e0 |
18.41 mm |
10 ns |
||||||||||||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
170 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
2 V |
0 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.194 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e4 |
20 |
260 |
.00033 Amp |
18.415 mm |
15 ns |
||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
AUTOMOTIVE |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
75 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
125 Cel |
3-STATE |
256KX16 |
256K |
3 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.194 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e4 |
20 |
260 |
.015 Amp |
18.415 mm |
20 ns |
|||||||||||
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
262144 words |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
70 Cel |
256KX16 |
256K |
0 Cel |
TIN |
DUAL |
R-PDSO-G44 |
3.6 V |
1.194 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e3 |
18.415 mm |
20 ns |
||||||||||||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
90 mA |
262144 words |
COMMON |
5 |
5 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
2 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-J44 |
3 |
5.5 V |
3.7592 mm |
10.16 mm |
Not Qualified |
4194304 bit |
4.5 V |
e4 |
40 |
260 |
.01 Amp |
28.575 mm |
10 ns |
||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
90 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
2 V |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
Not Qualified |
4194304 bit |
3 V |
e1 |
20 |
260 |
.01 Amp |
8 mm |
10 ns |
||||||||||||
Infineon Technologies |
STANDARD SRAM |
44 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
45 mA |
262144 words |
COMMON |
5 |
16 |
SMALL OUTLINE |
SOJ44,.44 |
1.27 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1 V |
-40 Cel |
DUAL |
R-PDSO-J44 |
5.5 V |
3.7592 mm |
100 MHz |
10.16 mm |
4194304 bit |
4.5 V |
YES |
.008 Amp |
28.575 mm |
10 ns |
||||||||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
45 mA |
262144 words |
COMMON |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
.75 mm |
85 Cel |
3-STATE |
256KX16 |
256K |
1 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
100 MHz |
6 mm |
4194304 bit |
2.2 V |
e1 |
260 |
YES |
.008 Amp |
8 mm |
10 ns |
|||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
36 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
90 mA |
524288 words |
COMMON |
3.3 |
8 |
SMALL OUTLINE |
SOJ36,.44 |
1.27 mm |
85 Cel |
NO |
3-STATE |
512KX8 |
512K |
3 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
1 |
R-PDSO-J36 |
3 |
3.6 V |
3.683 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e4 |
40 |
260 |
YES |
.01 Amp |
23.495 mm |
10 ns |
|||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
100 mA |
1048576 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
1MX8 |
1M |
2 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G44 |
3 |
3.6 V |
1.194 mm |
10.16 mm |
Not Qualified |
8388608 bit |
3 V |
e3 |
40 |
260 |
.02 Amp |
18.415 mm |
12 ns |
||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
175 mA |
1048576 words |
COMMON |
3.3 |
3.3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA48,6X8,30 |
SRAMs |
.75 mm |
85 Cel |
3-STATE |
1MX16 |
1M |
2 V |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
8 mm |
Not Qualified |
16777216 bit |
3 V |
e1 |
40 |
260 |
.025 Amp |
9.5 mm |
10 ns |
||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
48 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
1048576 words |
3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
.75 mm |
85 Cel |
1MX16 |
1M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B48 |
3 |
3.6 V |
1 mm |
6 mm |
16777216 bit |
2.2 V |
e1 |
260 |
8 mm |
10 ns |
||||||||||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
275 mA |
2097152 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
3 V |
0 Cel |
Matte Tin (Sn) |
DUAL |
R-PDSO-G54 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
16777216 bit |
3 V |
AUTOMATIC POWER-DOWN |
e3 |
20 |
260 |
.05 Amp |
22.415 mm |
10 ns |
|||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
275 mA |
2097152 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
SRAMs |
.8 mm |
85 Cel |
3-STATE |
2MX8 |
2M |
3 V |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G54 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
16777216 bit |
3 V |
e3 |
20 |
260 |
.05 Amp |
22.415 mm |
10 ns |
||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
260 mA |
2097152 words |
COMMON |
3.3 |
3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
3 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G54 |
3 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
16777216 bit |
3 V |
e0 |
.05 Amp |
22.415 mm |
12 ns |
|||||||||||||||
|
Infineon Technologies |
STANDARD SRAM |
INDUSTRIAL |
54 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
2097152 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
.8 mm |
85 Cel |
2MX8 |
2M |
-40 Cel |
PURE TIN |
DUAL |
R-PDSO-G54 |
3 |
5.5 V |
1.2 mm |
10.16 mm |
16777216 bit |
4.5 V |
260 |
22.415 mm |
10 ns |
|||||||||||||||||||||||
Infineon Technologies |
STANDARD SRAM |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
131072 words |
COMMON |
5 |
8 |
SMALL OUTLINE |
SOJ32,.44 |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
2 V |
0 Cel |
DUAL |
R-PDSO-J32 |
5.5 V |
3.7592 mm |
10.16 mm |
1048576 bit |
4.5 V |
YES |
.01 Amp |
20.955 mm |
15 ns |
|||||||||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
32 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
60 mA |
131072 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ32,.44 |
SRAMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J32 |
5.5 V |
3.7592 mm |
10.16 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.01 Amp |
20.955 mm |
35 ns |
||||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
22 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
90 mA |
256 words |
5 |
5 |
4 |
IN-LINE |
DIP22,.4 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
256X4 |
256 |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-PDIP-T22 |
5.5 V |
5.08 mm |
10.16 mm |
Not Qualified |
1024 bit |
4.5 V |
e0 |
YES |
.09 Amp |
28.067 mm |
15 ns |
|||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-PDIP-T24 |
5.5 V |
4.826 mm |
7.62 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
e0 |
YES |
.02 Amp |
30.099 mm |
35 ns |
|||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
MILITARY |
24 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
125 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
-55 Cel |
TIN LEAD |
DUAL |
1 |
R-GDIP-T24 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
e0 |
YES |
.02 Amp |
31.877 mm |
20 ns |
||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDIP-T24 |
1 |
5.5 V |
4.826 mm |
7.62 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
e0 |
YES |
.02 Amp |
31.75 mm |
45 ns |
||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
MILITARY |
24 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
38535Q/M;38534H;883B |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
100 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.3 |
SRAMs |
2.54 mm |
125 Cel |
3-STATE |
2KX8 |
2K |
4.5 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
1 |
R-GDIP-T24 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
e0 |
YES |
.02 Amp |
31.877 mm |
55 ns |
||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
175 mA |
1048576 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
3.14 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
3.63 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
18874368 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e0 |
.07 Amp |
20 mm |
8.5 ns |
|||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
165 mA |
8192 words |
COMMON |
3.3 |
3.3 |
8 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
2 V |
0 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
2 |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
3 V |
e4 |
20 |
260 |
.00005 Amp |
14 mm |
25 ns |
|||||||||||
Infineon Technologies |
STANDARD SRAM |
COMMERCIAL |
165 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
450 mA |
2097152 words |
COMMON |
2.5 |
2.5 |
36 |
GRID ARRAY, LOW PROFILE |
BGA165,11X15,40 |
SRAMs |
1 mm |
70 Cel |
3-STATE |
2MX36 |
2M |
2.375 V |
0 Cel |
TIN LEAD |
BOTTOM |
1 |
R-PBGA-B165 |
3 |
2.625 V |
1.4 mm |
200 MHz |
15 mm |
Not Qualified |
75497472 bit |
2.375 V |
e0 |
220 |
YES |
.12 Amp |
17 mm |
3 ns |
|||||||||||
Rochester Electronics |
STANDARD SRAM |
COMMERCIAL |
20 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
16384 words |
5 |
1 |
IN-LINE |
2.54 mm |
70 Cel |
16KX1 |
16K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T20 |
5.5 V |
4.826 mm |
7.62 mm |
Not Qualified |
16384 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
e0 |
25.527 mm |
15 ns |
|||||||||||||||||||||||
Rochester Electronics |
STANDARD SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
64KX4 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J28 |
5.5 V |
3.556 mm |
7.5 mm |
Not Qualified |
262144 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
e0 |
17.907 mm |
12 ns |
|||||||||||||||||||||||
Rochester Electronics |
STANDARD SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
64KX4 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J28 |
5.5 V |
3.556 mm |
7.5 mm |
Not Qualified |
262144 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
e0 |
17.907 mm |
25 ns |
|||||||||||||||||||||||
Rochester Electronics |
STANDARD SRAM |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
32KX8 |
32K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J28 |
5.5 V |
3.556 mm |
7.5 mm |
Not Qualified |
262144 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
e0 |
17.907 mm |
12 ns |
|||||||||||||||||||||||
Rochester Electronics |
STANDARD SRAM |
COMMERCIAL |
28 |
TSOP1 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
.55 mm |
70 Cel |
32KX8 |
32K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G28 |
5.5 V |
1.2 mm |
8 mm |
Not Qualified |
262144 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
e0 |
11.8 mm |
20 ns |
|||||||||||||||||||||||
Rochester Electronics |
STANDARD SRAM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
IN-LINE |
2.54 mm |
70 Cel |
32KX8 |
32K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
4.826 mm |
7.62 mm |
Not Qualified |
262144 bit |
4.5 V |
AUTOMATIC POWER-DOWN |
e0 |
35.4965 mm |
35 ns |
|||||||||||||||||||||||
|
Cypress Semiconductor |
STANDARD SRAM |
INDUSTRIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
32768 words |
COMMON |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ28,.34 |
SRAMs |
1.27 mm |
85 Cel |
3-STATE |
32KX8 |
32K |
2 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDSO-J28 |
3 |
5.5 V |
3.556 mm |
7.5 mm |
Not Qualified |
262144 bit |
4.5 V |
e4 |
30 |
260 |
.00015 Amp |
17.907 mm |
15 ns |
||||||||||||
Intel |
STANDARD SRAM |
COMMERCIAL |
18 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
40 mA |
4096 words |
SEPARATE |
5 |
5 |
1 |
IN-LINE |
DIP18,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
4KX1 |
4K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T18 |
Not Qualified |
4096 bit |
e0 |
150 ns |
|||||||||||||||||||||||
Intel |
STANDARD SRAM |
COMMERCIAL |
20 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
1024 words |
COMMON |
4 |
IN-LINE |
DIP20,.3 |
SRAMs |
2.54 mm |
70 Cel |
3-STATE |
1KX4 |
1K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T20 |
Not Qualified |
4096 bit |
e0 |
200 ns |
|||||||||||||||||||||||||||
National Semiconductor |
STANDARD SRAM |
COMMERCIAL |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
TTL |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
16 words |
5 |
5 |
4 |
IN-LINE |
DIP16,.3 |
SRAMs |
2.54 mm |
70 Cel |
OPEN-COLLECTOR |
16X4 |
16 |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T16 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||
National Semiconductor |
STANDARD SRAM |
COMMERCIAL |
18 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
TTL |
THROUGH-HOLE |
PARALLEL |
SYNCHRONOUS |
16 words |
5 |
4 |
IN-LINE |
DIP18,.3 |
Other Memory ICs |
2.54 mm |
70 Cel |
3-STATE |
16X4 |
16 |
0 Cel |
TIN LEAD |
DUAL |
1 |
R-PDIP-T18 |
5.25 V |
5.08 mm |
7.62 mm |
Not Qualified |
64 bit |
4.75 V |
e0 |
YES |
21.755 mm |
||||||||||||||||||||
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
44 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
175 mA |
262144 words |
COMMON |
3.3 |
3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
SRAMs |
.8 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
3 V |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G44 |
3.6 V |
1.2 mm |
10.16 mm |
Not Qualified |
4194304 bit |
3 V |
e0 |
.01 Amp |
18.56 mm |
15 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.