STANDARD SRAM SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

CY62256V-70SNCT

Cypress Semiconductor

STANDARD SRAM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

3

8

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

32KX8

32K

2 V

0 Cel

DUAL

1

R-PDSO-G28

3.6 V

2.794 mm

7.5057 mm

Not Qualified

262144 bit

2.7 V

AUTOMATIC POWER-DOWN

YES

18.3896 mm

70 ns

CY62256VNLL-70ZIT

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

3

8

SMALL OUTLINE, THIN PROFILE

.55 mm

85 Cel

32KX8

32K

-40 Cel

DUAL

R-PDSO-G28

3.6 V

1.2 mm

8 mm

Not Qualified

262144 bit

2.7 V

11.8 mm

70 ns

CY6264-70SNCT

Cypress Semiconductor

STANDARD SRAM

COMMERCIAL

28

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

100 mA

8192 words

COMMON

5

5

8

SMALL OUTLINE

SOP28,.5

SRAMs

1.27 mm

70 Cel

3-STATE

8KX8

8K

4.5 V

0 Cel

TIN LEAD

DUAL

1

R-PDSO-G28

1

5.5 V

2.794 mm

7.5057 mm

Not Qualified

65536 bit

4.5 V

e0

YES

.015 Amp

17.9324 mm

70 ns

CY7C1011G30-12ZSXE

Infineon Technologies

STANDARD SRAM

AUTOMOTIVE

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

16

SMALL OUTLINE, THIN PROFILE

.8 mm

125 Cel

128KX16

128K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G44

3

3.6 V

1.194 mm

10.16 mm

2097152 bit

2.2 V

e4

260

18.415 mm

12 ns

CY7C1019B-15VCT

Cypress Semiconductor

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-PDSO-J32

2

5.5 V

3.7592 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e0

20.955 mm

15 ns

CY7C1019CV33-8VC

Cypress Semiconductor

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

85 mA

131072 words

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

3 V

0 Cel

TIN LEAD

DUAL

R-PDSO-J32

2

3.63 V

3.7592 mm

10.16 mm

Not Qualified

1048576 bit

2.97 V

e0

.005 Amp

20.955 mm

8 ns

CY7C1020CV33-15ZI

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

80 mA

32768 words

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

32KX16

32K

3 V

-40 Cel

TIN LEAD

DUAL

R-PDSO-G44

3

3.63 V

1.194 mm

10.16 mm

Not Qualified

524288 bit

2.97 V

e0

.005 Amp

18.415 mm

15 ns

CY7C1020CV33-15ZSXET

Cypress Semiconductor

STANDARD SRAM

AUTOMOTIVE

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

PARALLEL

ASYNCHRONOUS

85 mA

32768 words

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

125 Cel

3-STATE

32KX16

32K

3 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G44

3

3.63 V

1.194 mm

10.16 mm

Not Qualified

524288 bit

2.97 V

e4

20

260

.01 Amp

18.415 mm

15 ns

CY7C1021BL-15ZXIT

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65536 words

5

16

SMALL OUTLINE, THIN PROFILE

.8 mm

85 Cel

64KX16

64K

-40 Cel

DUAL

R-PDSO-G44

5.5 V

1.194 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

18.415 mm

15 ns

CY7C1021BNL-15ZXI

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

130 mA

65536 words

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

64KX16

64K

4.5 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G44

3

5.5 V

1.194 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e4

20

260

.0005 Amp

18.415 mm

15 ns

CY7C1021BV33-10ZC

Rochester Electronics

STANDARD SRAM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65536 words

3.3

16

SMALL OUTLINE, THIN PROFILE

.8 mm

70 Cel

64KX16

64K

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.63 V

1.2 mm

10.16 mm

Not Qualified

1048576 bit

2.97 V

e0

18.41 mm

10 ns

CY7C1041BNV33L-15ZXC

Cypress Semiconductor

STANDARD SRAM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

170 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

70 Cel

3-STATE

256KX16

256K

2 V

0 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G44

3

3.6 V

1.194 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e4

20

260

.00033 Amp

18.415 mm

15 ns

CY7C1041CV33-20ZSXE

Cypress Semiconductor

STANDARD SRAM

AUTOMOTIVE

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

PARALLEL

ASYNCHRONOUS

75 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

125 Cel

3-STATE

256KX16

256K

3 V

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G44

3

3.6 V

1.194 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e4

20

260

.015 Amp

18.415 mm

20 ns

CY7C1041CV33-20ZXCT

Cypress Semiconductor

STANDARD SRAM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

3.3

16

SMALL OUTLINE, THIN PROFILE

.8 mm

70 Cel

256KX16

256K

0 Cel

TIN

DUAL

R-PDSO-G44

3.6 V

1.194 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e3

18.415 mm

20 ns

CY7C1041D-10VXI

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

90 mA

262144 words

COMMON

5

5

16

SMALL OUTLINE

SOJ44,.44

SRAMs

1.27 mm

85 Cel

3-STATE

256KX16

256K

2 V

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-J44

3

5.5 V

3.7592 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

e4

40

260

.01 Amp

28.575 mm

10 ns

CY7C1041DV33-10BVJXIT

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

90 mA

262144 words

COMMON

3.3

3.3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

256KX16

256K

2 V

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

Not Qualified

4194304 bit

3 V

e1

20

260

.01 Amp

8 mm

10 ns

CY7C1041G-10VXIT

Infineon Technologies

STANDARD SRAM

44

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

45 mA

262144 words

COMMON

5

16

SMALL OUTLINE

SOJ44,.44

1.27 mm

85 Cel

3-STATE

256KX16

256K

1 V

-40 Cel

DUAL

R-PDSO-J44

5.5 V

3.7592 mm

100 MHz

10.16 mm

4194304 bit

4.5 V

YES

.008 Amp

28.575 mm

10 ns

CY7C1041GE30-10BVXI

Infineon Technologies

STANDARD SRAM

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

45 mA

262144 words

COMMON

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

.75 mm

85 Cel

3-STATE

256KX16

256K

1 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

100 MHz

6 mm

4194304 bit

2.2 V

e1

260

YES

.008 Amp

8 mm

10 ns

CY7C1049DV33-10VXI

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

36

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

90 mA

524288 words

COMMON

3.3

8

SMALL OUTLINE

SOJ36,.44

1.27 mm

85 Cel

NO

3-STATE

512KX8

512K

3 V

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

1

R-PDSO-J36

3

3.6 V

3.683 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e4

40

260

YES

.01 Amp

23.495 mm

10 ns

CY7C1059DV33-12ZSXI

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

100 mA

1048576 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

1MX8

1M

2 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G44

3

3.6 V

1.194 mm

10.16 mm

Not Qualified

8388608 bit

3 V

e3

40

260

.02 Amp

18.415 mm

12 ns

CY7C1061DV33-10BVXI

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

175 mA

1048576 words

COMMON

3.3

3.3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,30

SRAMs

.75 mm

85 Cel

3-STATE

1MX16

1M

2 V

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

8 mm

Not Qualified

16777216 bit

3 V

e1

40

260

.025 Amp

9.5 mm

10 ns

CY7C1061GE30-10BVJXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

85 Cel

1MX16

1M

-40 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

16777216 bit

2.2 V

e1

260

8 mm

10 ns

CY7C1069AV33-10ZXC

Cypress Semiconductor

STANDARD SRAM

COMMERCIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

275 mA

2097152 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

SRAMs

.8 mm

70 Cel

3-STATE

2MX8

2M

3 V

0 Cel

Matte Tin (Sn)

DUAL

R-PDSO-G54

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

3 V

AUTOMATIC POWER-DOWN

e3

20

260

.05 Amp

22.415 mm

10 ns

CY7C1069AV33-10ZXI

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

275 mA

2097152 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

SRAMs

.8 mm

85 Cel

3-STATE

2MX8

2M

3 V

-40 Cel

MATTE TIN

DUAL

R-PDSO-G54

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

3 V

e3

20

260

.05 Amp

22.415 mm

10 ns

CY7C1069AV33-12ZC

Cypress Semiconductor

STANDARD SRAM

COMMERCIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

260 mA

2097152 words

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

SRAMs

.8 mm

70 Cel

3-STATE

2MX8

2M

3 V

0 Cel

TIN LEAD

DUAL

R-PDSO-G54

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

3 V

e0

.05 Amp

22.415 mm

12 ns

CY7C1069G-10ZSXI

Infineon Technologies

STANDARD SRAM

INDUSTRIAL

54

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

5

8

SMALL OUTLINE, THIN PROFILE

.8 mm

85 Cel

2MX8

2M

-40 Cel

PURE TIN

DUAL

R-PDSO-G54

3

5.5 V

1.2 mm

10.16 mm

16777216 bit

4.5 V

260

22.415 mm

10 ns

CY7C109B-15VXC

Infineon Technologies

STANDARD SRAM

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

80 mA

131072 words

COMMON

5

8

SMALL OUTLINE

SOJ32,.44

1.27 mm

70 Cel

3-STATE

128KX8

128K

2 V

0 Cel

DUAL

R-PDSO-J32

5.5 V

3.7592 mm

10.16 mm

1048576 bit

4.5 V

YES

.01 Amp

20.955 mm

15 ns

CY7C109B-35VC

Cypress Semiconductor

STANDARD SRAM

COMMERCIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

60 mA

131072 words

COMMON

5

5

8

SMALL OUTLINE

SOJ32,.44

SRAMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J32

5.5 V

3.7592 mm

10.16 mm

Not Qualified

1048576 bit

4.5 V

e0

.01 Amp

20.955 mm

35 ns

CY7C122-15PC

Cypress Semiconductor

STANDARD SRAM

COMMERCIAL

22

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

90 mA

256 words

5

5

4

IN-LINE

DIP22,.4

SRAMs

2.54 mm

70 Cel

3-STATE

256X4

256

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDIP-T22

5.5 V

5.08 mm

10.16 mm

Not Qualified

1024 bit

4.5 V

e0

YES

.09 Amp

28.067 mm

15 ns

CY7C128-35PC

Cypress Semiconductor

STANDARD SRAM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.3

SRAMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDIP-T24

5.5 V

4.826 mm

7.62 mm

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

YES

.02 Amp

30.099 mm

35 ns

CY7C128A-20DMB

Cypress Semiconductor

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

125 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.3

SRAMs

2.54 mm

125 Cel

3-STATE

2KX8

2K

4.5 V

-55 Cel

TIN LEAD

DUAL

1

R-GDIP-T24

5.5 V

5.08 mm

7.62 mm

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

YES

.02 Amp

31.877 mm

20 ns

CY7C128A-45PC

Cypress Semiconductor

STANDARD SRAM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.3

SRAMs

2.54 mm

70 Cel

3-STATE

2KX8

2K

4.5 V

0 Cel

TIN LEAD

DUAL

1

R-PDIP-T24

1

5.5 V

4.826 mm

7.62 mm

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

YES

.02 Amp

31.75 mm

45 ns

CY7C128A-55DMB

Cypress Semiconductor

STANDARD SRAM

MILITARY

24

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

38535Q/M;38534H;883B

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

2048 words

COMMON

5

5

8

IN-LINE

DIP24,.3

SRAMs

2.54 mm

125 Cel

3-STATE

2KX8

2K

4.5 V

-55 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-GDIP-T24

5.5 V

5.08 mm

7.62 mm

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

YES

.02 Amp

31.877 mm

55 ns

CY7C1383C-100AC

Cypress Semiconductor

STANDARD SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

175 mA

1048576 words

COMMON

3.3

2.5/3.3,3.3

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

1MX18

1M

3.14 V

0 Cel

TIN LEAD

QUAD

R-PQFP-G100

3

3.63 V

1.6 mm

100 MHz

14 mm

Not Qualified

18874368 bit

3.135 V

FLOW-THROUGH ARCHITECTURE

e0

.07 Amp

20 mm

8.5 ns

CY7C144AV-25AXC

Cypress Semiconductor

STANDARD SRAM

COMMERCIAL

64

LQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

165 mA

8192 words

COMMON

3.3

3.3

8

FLATPACK, LOW PROFILE

QFP64,.66SQ,32

SRAMs

.8 mm

70 Cel

3-STATE

8KX8

8K

2 V

0 Cel

NICKEL PALLADIUM GOLD

QUAD

2

S-PQFP-G64

3

3.6 V

1.6 mm

14 mm

Not Qualified

65536 bit

3 V

e4

20

260

.00005 Amp

14 mm

25 ns

CY7C1480BV25-200BZC

Infineon Technologies

STANDARD SRAM

COMMERCIAL

165

LBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

450 mA

2097152 words

COMMON

2.5

2.5

36

GRID ARRAY, LOW PROFILE

BGA165,11X15,40

SRAMs

1 mm

70 Cel

3-STATE

2MX36

2M

2.375 V

0 Cel

TIN LEAD

BOTTOM

1

R-PBGA-B165

3

2.625 V

1.4 mm

200 MHz

15 mm

Not Qualified

75497472 bit

2.375 V

e0

220

YES

.12 Amp

17 mm

3 ns

CY7C167A-15PC

Rochester Electronics

STANDARD SRAM

COMMERCIAL

20

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16384 words

5

1

IN-LINE

2.54 mm

70 Cel

16KX1

16K

0 Cel

TIN LEAD

DUAL

R-PDIP-T20

5.5 V

4.826 mm

7.62 mm

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

25.527 mm

15 ns

CY7C195-12VCT

Rochester Electronics

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

64KX4

64K

0 Cel

TIN LEAD

DUAL

R-PDSO-J28

5.5 V

3.556 mm

7.5 mm

Not Qualified

262144 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

17.907 mm

12 ns

CY7C195-25VCT

Rochester Electronics

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

65536 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

64KX4

64K

0 Cel

TIN LEAD

DUAL

R-PDSO-J28

5.5 V

3.556 mm

7.5 mm

Not Qualified

262144 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

17.907 mm

25 ns

CY7C199-12VC

Rochester Electronics

STANDARD SRAM

COMMERCIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

32768 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

32KX8

32K

0 Cel

TIN LEAD

DUAL

R-PDSO-J28

5.5 V

3.556 mm

7.5 mm

Not Qualified

262144 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

17.907 mm

12 ns

CY7C199-20ZC

Rochester Electronics

STANDARD SRAM

COMMERCIAL

28

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

5

8

SMALL OUTLINE, THIN PROFILE

.55 mm

70 Cel

32KX8

32K

0 Cel

TIN LEAD

DUAL

R-PDSO-G28

5.5 V

1.2 mm

8 mm

Not Qualified

262144 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

11.8 mm

20 ns

CY7C199-35PC

Rochester Electronics

STANDARD SRAM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

32768 words

5

8

IN-LINE

2.54 mm

70 Cel

32KX8

32K

0 Cel

TIN LEAD

DUAL

R-PDIP-T28

5.5 V

4.826 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

35.4965 mm

35 ns

CY7C199CNL-15VXIT

Cypress Semiconductor

STANDARD SRAM

INDUSTRIAL

28

SOJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

80 mA

32768 words

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.34

SRAMs

1.27 mm

85 Cel

3-STATE

32KX8

32K

2 V

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-J28

3

5.5 V

3.556 mm

7.5 mm

Not Qualified

262144 bit

4.5 V

e4

30

260

.00015 Amp

17.907 mm

15 ns

D2141L-3

Intel

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

40 mA

4096 words

SEPARATE

5

5

1

IN-LINE

DIP18,.3

SRAMs

2.54 mm

70 Cel

3-STATE

4KX1

4K

4.5 V

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T18

Not Qualified

4096 bit

e0

150 ns

D2142-2

Intel

STANDARD SRAM

COMMERCIAL

20

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

COMMON

4

IN-LINE

DIP20,.3

SRAMs

2.54 mm

70 Cel

3-STATE

1KX4

1K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T20

Not Qualified

4096 bit

e0

200 ns

DM7489N

National Semiconductor

STANDARD SRAM

COMMERCIAL

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

TTL

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

16 words

5

5

4

IN-LINE

DIP16,.3

SRAMs

2.54 mm

70 Cel

OPEN-COLLECTOR

16X4

16

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T16

Not Qualified

e0

DM85S68N

National Semiconductor

STANDARD SRAM

COMMERCIAL

18

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

TTL

THROUGH-HOLE

PARALLEL

SYNCHRONOUS

16 words

5

4

IN-LINE

DIP18,.3

Other Memory ICs

2.54 mm

70 Cel

3-STATE

16X4

16

0 Cel

TIN LEAD

DUAL

1

R-PDIP-T18

5.25 V

5.08 mm

7.62 mm

Not Qualified

64 bit

4.75 V

e0

YES

21.755 mm

GVT73256A16TS-15

Cypress Semiconductor

STANDARD SRAM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

175 mA

262144 words

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

70 Cel

3-STATE

256KX16

256K

3 V

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.6 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e0

.01 Amp

18.56 mm

15 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.