STATIC COLUMN DRAM SRAM 137

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Seated Height	Qualification	Memory Density	JESD-609 Code	Maximum Standby Current	Maximum Access Time
TMS44C257-12DJ	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	70 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K		DUAL	R-PDSO-J20		Not Qualified	1048576 bit		.003 Amp	120 ns
TMS4C1027DJ-15	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND		1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M		DUAL	R-PDSO-J20		Not Qualified	1048576 bit			150 ns
TMS44C257-15DJ	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	70 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K		DUAL	R-PDSO-J20		Not Qualified	1048576 bit		.003 Amp	150 ns
TMS4C1027N-15	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE		1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M		DUAL	R-PDIP-T18		Not Qualified	1048576 bit			150 ns
TMS44C257-10DJ	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	70 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K		DUAL	R-PDSO-J20		Not Qualified	1048576 bit		.003 Amp	100 ns
TMS4C1027-15DJ	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND		1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M		DUAL	R-PDSO-J20		Not Qualified	1048576 bit			150 ns
TMS44C257-12N	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	70 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	256KX4	256K		DUAL	R-PDIP-T20		Not Qualified	1048576 bit		.003 Amp	120 ns
TMS44C257-15N	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	70 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	256KX4	256K		DUAL	R-PDIP-T20		Not Qualified	1048576 bit		.003 Amp	150 ns
TMS44C257-10N	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	70 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	256KX4	256K		DUAL	R-PDIP-T20		Not Qualified	1048576 bit		.003 Amp	100 ns
TMS4C1027-15N	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE		1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M		DUAL	R-PDIP-T18		Not Qualified	1048576 bit			150 ns
HYB511002-12	Infineon Technologies	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE		1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18		Not Qualified	1048576 bit	e0		120 ns
HYB511002-10	Infineon Technologies	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE		1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18		Not Qualified	1048576 bit	e0		100 ns
TC514258P-85	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	75 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel		3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T20		Not Qualified	1048576 bit	e0	.001 Amp	85 ns
TC514402ATR-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	75 mA	1048576 words		COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel	YES	3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.001 Amp	100 ns
THM91002L-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS		540 mA	1048576 words		COMMON	5	5	9		SIP30,.2	SRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M	Tin/Lead (Sn/Pb)	SINGLE		22.86 mm	Not Qualified	9437184 bit	e0	.009 Amp	100 ns
TC511002P-85	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	70 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18		Not Qualified	1048576 bit	e0	.001 Amp	85 ns
THM8514S-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	134 mA	524288 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel		3-STATE	512KX8	512K		SINGLE	R-PSMA-N30		Not Qualified	4194304 bit		.004 Amp	100 ns
TC511002P-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	50 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18		Not Qualified	1048576 bit	e0	.001 Amp	120 ns
THM91022L-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS		450 mA	1048576 words		COMMON	5	5	9		SIP30,.2	SRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M	Tin/Lead (Sn/Pb)	SINGLE		12.7 mm	Not Qualified	9437184 bit	e0	.009 Amp	120 ns
TC514258J-85	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	75 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20		Not Qualified	1048576 bit	e0	.001 Amp	85 ns
TC5116402J-60	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	90 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/28,.44	SRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J24		Not Qualified	16777216 bit	e0	.001 Amp	60 ns
THM91002S-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	450 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M		SINGLE	R-PSMA-N30	20.32 mm	Not Qualified	9437184 bit		.009 Amp	120 ns
THM81022L-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS		400 mA	1048576 words		COMMON	5	5	8		SIP30,.2	SRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M	Tin/Lead (Sn/Pb)	SINGLE		12.7 mm	Not Qualified	8388608 bit	e0	.008 Amp	120 ns
TC514402AFT-60	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	1048576 words		COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel		3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.001 Amp	60 ns
TC5116402Z-80	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	ZIP	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	70 mA	4194304 words	NO	COMMON	5	5	4	IN-LINE	ZIP24,.1	SRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T24		Not Qualified	16777216 bit	e0	.001 Amp	80 ns
THM81002S-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	400 mA	1048576 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M		SINGLE	R-PSMA-N30	20.32 mm	Not Qualified	8388608 bit		.008 Amp	120 ns
TC5116402TR-80	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	70 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	SRAMs	1.27 mm	70 Cel	YES	3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24		Not Qualified	16777216 bit	e0	.001 Amp	80 ns
TC5116402J-80	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	70 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/28,.44	SRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J24		Not Qualified	16777216 bit	e0	.001 Amp	80 ns
TC514402AFT-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	75 mA	1048576 words		COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel		3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.001 Amp	100 ns
TC511002J-85	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	70 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20		Not Qualified	1048576 bit	e0	.001 Amp	85 ns
TC514402AFT-80	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	85 mA	1048576 words		COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel		3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.001 Amp	80 ns
TC511002J-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	50 mA	1048576 words		SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20		Not Qualified	1048576 bit	e0	.001 Amp	120 ns
THM81002L-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS		400 mA	1048576 words		COMMON	5	5	8		SIP30,.2	SRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M	Tin/Lead (Sn/Pb)	SINGLE		22.86 mm	Not Qualified	8388608 bit	e0	.008 Amp	120 ns
THM8514L-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS		134 mA	524288 words		COMMON	5	5	8		SIP30,.2	SRAMs	2.54 mm	70 Cel		3-STATE	512KX8	512K	Tin/Lead (Sn/Pb)	SINGLE			Not Qualified	4194304 bit	e0	.004 Amp	100 ns
TC5116402J-70	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	80 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/28,.44	SRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J24		Not Qualified	16777216 bit	e0	.001 Amp	70 ns
TC5116402FT-60	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	90 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	SRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24		Not Qualified	16777216 bit	e0	.001 Amp	60 ns
THM81002S-85	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	560 mA	1048576 words		COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M		SINGLE	R-PSMA-N30	20.32 mm	Not Qualified	8388608 bit		.008 Amp	85 ns
TC514258J-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	65 mA	262144 words		COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel		3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20		Not Qualified	1048576 bit	e0	.001 Amp	100 ns
TC511002Z-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	50 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel		3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20		Not Qualified	1048576 bit	e0	.001 Amp	120 ns
TC5116402TR-70	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	80 mA	4194304 words	NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/28,.46	SRAMs	1.27 mm	70 Cel	YES	3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24		Not Qualified	16777216 bit	e0	.001 Amp	70 ns
TC514402ATR-60	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	20	TSSOP	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING	120 mA	1048576 words		COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20/26,.36	SRAMs	.635 mm	70 Cel	YES	3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G20		Not Qualified	4194304 bit	e0	.001 Amp	60 ns
TC5116402Z-70	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	24	ZIP	4096	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	80 mA	4194304 words	NO	COMMON	5	5	4	IN-LINE	ZIP24,.1	SRAMs	1.27 mm	70 Cel		3-STATE	4MX4	4M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T24		Not Qualified	16777216 bit	e0	.001 Amp	70 ns
THM91002L-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS		450 mA	1048576 words		COMMON	5	5	9		SIP30,.2	SRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M	Tin/Lead (Sn/Pb)	SINGLE		22.86 mm	Not Qualified	9437184 bit	e0	.009 Amp	120 ns
THM91002S-85	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	NO LEAD	630 mA	1048576 words		COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	SRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M		SINGLE	R-PSMA-N30	20.32 mm	Not Qualified	9437184 bit		.009 Amp	85 ns
THM41002L-12	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	25		512		PLASTIC/EPOXY	NO	CMOS		200 mA	1048576 words		SEPARATE	5	5	4		SIP25,.2	SRAMs	2.54 mm	70 Cel		3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	SINGLE			Not Qualified	4194304 bit	e0		120 ns
THM81022L-10	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS		480 mA	1048576 words		COMMON	5	5	8		SIP30,.2	SRAMs	2.54 mm	70 Cel		3-STATE	1MX8	1M	Tin/Lead (Sn/Pb)	SINGLE		12.7 mm	Not Qualified	8388608 bit	e0	.008 Amp	100 ns
THM91022L-85	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS		630 mA	1048576 words		COMMON	5	5	9		SIP30,.2	SRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M	Tin/Lead (Sn/Pb)	SINGLE		12.7 mm	Not Qualified	9437184 bit	e0	.009 Amp	85 ns
THM91002L-85	Toshiba	STATIC COLUMN DRAM	COMMERCIAL	30		512		PLASTIC/EPOXY	NO	CMOS		630 mA	1048576 words		COMMON	5	5	9		SIP30,.2	SRAMs	2.54 mm	70 Cel		3-STATE	1MX9	1M	Tin/Lead (Sn/Pb)	SINGLE		22.86 mm	Not Qualified	9437184 bit	e0	.009 Amp	85 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.