STATIC COLUMN DRAM SRAM 137

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	JESD-30 Code	Qualification	Memory Density	JESD-609 Code	Maximum Standby Current	Maximum Access Time
UPD424268LA-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	70 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20	Not Qualified	1048576 bit	e0	.001 Amp	80 ns
UPD424268C-60	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	90 mA	262144 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T20	Not Qualified	1048576 bit	e0	.001 Amp	60 ns
UPD424258V-60	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	90 mA	262144 words	COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20	Not Qualified	1048576 bit	e0	.001 Amp	60 ns
UPD424268V-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	70 mA	262144 words	COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20	Not Qualified	1048576 bit	e0	.001 Amp	80 ns
UPD421002LA-12	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND		1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20	Not Qualified	1048576 bit	e0		120 ns
UPD421002LA-60	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	90 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20	Not Qualified	1048576 bit	e0	.001 Amp	60 ns
UPD424268C-70	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	80 mA	262144 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T20	Not Qualified	1048576 bit	e0	.001 Amp	70 ns
UPD424258C-60	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	90 mA	262144 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T20	Not Qualified	1048576 bit	e0	.001 Amp	60 ns
UPD424268C-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	70 mA	262144 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T20	Not Qualified	1048576 bit	e0	.001 Amp	80 ns
UPD424258LA-60	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	90 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20	Not Qualified	1048576 bit	e0	.001 Amp	60 ns
UPD424258LA-10	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	60 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20	Not Qualified	1048576 bit	e0	.001 Amp	100 ns
UPD424268C-10	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	60 mA	262144 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T20	Not Qualified	1048576 bit	e0	.001 Amp	100 ns
UPD424258C-12	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	50 mA	262144 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T20	Not Qualified	1048576 bit	e0	.001 Amp	120 ns
UPD424258LA-12	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	50 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20	Not Qualified	1048576 bit	e0	.001 Amp	120 ns
UPD421002V-12	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE		1048576 words	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20	Not Qualified	1048576 bit	e0		120 ns
UPD421002C-10	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	60 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18	Not Qualified	1048576 bit	e0	.001 Amp	100 ns
UPD424258V-12	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	50 mA	262144 words	COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20	Not Qualified	1048576 bit	e0	.001 Amp	120 ns
UPD424268LA-70	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	80 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20	Not Qualified	1048576 bit	e0	.001 Amp	70 ns
UPD421002V-60	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	90 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20	Not Qualified	1048576 bit	e0	.001 Amp	60 ns
UPD424258LA-70	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	80 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20	Not Qualified	1048576 bit	e0	.001 Amp	70 ns
UPD421002C-12	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE		1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18	Not Qualified	1048576 bit	e0		120 ns
UPD424268LA-60	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	90 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20	Not Qualified	1048576 bit	e0	.001 Amp	60 ns
UPD424268V-10	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	60 mA	262144 words	COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20	Not Qualified	1048576 bit	e0	.001 Amp	100 ns
UPD421002LA-70	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	80 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20	Not Qualified	1048576 bit	e0	.001 Amp	70 ns
UPD424268V-70	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	80 mA	262144 words	COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20	Not Qualified	1048576 bit	e0	.001 Amp	70 ns
UPD421002V-70	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	80 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20	Not Qualified	1048576 bit	e0	.001 Amp	70 ns
UPD421002C-70	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	80 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18	Not Qualified	1048576 bit	e0	.001 Amp	70 ns
UPD421002C-60	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	90 mA	1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18	Not Qualified	1048576 bit	e0	.001 Amp	60 ns
UPD421002LA-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	70 mA	1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20	Not Qualified	1048576 bit	e0	.001 Amp	80 ns
UPD424258C-80	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	70 mA	262144 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T20	Not Qualified	1048576 bit	e0	.001 Amp	80 ns
UPD424258C-70	Renesas Electronics	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	80 mA	262144 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T20	Not Qualified	1048576 bit	e0	.001 Amp	70 ns
KM44C1002J-12	Samsung	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND		1048576 words	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.4	SRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20	Not Qualified	4194304 bit	e0		120 ns
KM44C1002Z-12	Samsung	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE		1048576 words	COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20	Not Qualified	4194304 bit	e0		120 ns
MT4C1026DJ15	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND		1048576 words	SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20	Not Qualified	1048576 bit	e0		150 ns
MT4C4258DJ15	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	J BEND	50 mA	262144 words	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-J20	Not Qualified	1048576 bit	e0	.001 Amp	150 ns
MT4C1026-15	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE		1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T18	Not Qualified	1048576 bit	e0		150 ns
MT4C4258Z15	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	50 mA	262144 words	COMMON	5	5	4	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20	Not Qualified	1048576 bit	e0	.001 Amp	150 ns
MT4C1026C15	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	CERAMIC	NO	CMOS	THROUGH-HOLE		1048576 words	SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T18	Not Qualified	1048576 bit	e0		150 ns
MT4C4258-15	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE	50 mA	262144 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T20	Not Qualified	1048576 bit	e0	.001 Amp	150 ns
MT4C1026Z15	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	NO	CMOS	THROUGH-HOLE		1048576 words	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	SRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T20	Not Qualified	1048576 bit	e0		150 ns
MT4C4258C15	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	CERAMIC	NO	CMOS	THROUGH-HOLE	50 mA	262144 words	COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T20	Not Qualified	1048576 bit	e0	.001 Amp	150 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.