ZBT SRAM SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
CY7C1370KV33-167AXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel		512KX36	512K		-40 Cel	PURE TIN	QUAD	R-PQFP-G100	3	3.6 V	1.6 mm		14 mm		18874368 bit	3.135 V	PIPELINED ARCHITECTURE			260		20 mm	3.4 ns
CY7C1370KV33-200AXC	Infineon Technologies	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		512KX36	512K		0 Cel	PURE TIN	QUAD	R-PQFP-G100	3	3.6 V	1.6 mm		14 mm		18874368 bit	3.135 V	PIPELINED ARCHITECTURE			260		20 mm	3 ns
CY7C1370KV33-200AXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	85 Cel		512KX36	512K		-40 Cel	PURE TIN	QUAD	R-PQFP-G100	3	3.6 V	1.6 mm		14 mm		18874368 bit	3.135 V	PIPELINED ARCHITECTURE			260		20 mm	3 ns
CY7C1373D-100AXI	Cypress Semiconductor	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	175 mA	1048576 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	1MX18	1M	3.14 V	-40 Cel	MATTE TIN	QUAD	R-PQFP-G100	3	3.6 V	1.6 mm	100 MHz	14 mm	Not Qualified	18874368 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e3	40	260	.07 Amp	20 mm	8.5 ns
CY7C1470BV25-200BZI	Cypress Semiconductor	ZBT SRAM	INDUSTRIAL	165	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	2097152 words	COMMON	2.5	2.5	36	GRID ARRAY, LOW PROFILE	BGA165,11X15,40	SRAMs	1 mm	85 Cel	3-STATE	2MX36	2M	2.38 V	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B165	3	2.625 V	1.4 mm	200 MHz	15 mm	Not Qualified	75497472 bit	2.375 V	PIPELINED ARCHITECTURE	e0				17 mm	3 ns
CY7C1470BV33-167AXI	Infineon Technologies	ZBT SRAM	INDUSTRIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	450 mA	2097152 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	85 Cel	3-STATE	2MX36	2M	3.14 V	-40 Cel	MATTE TIN	QUAD	R-PQFP-G100	3	3.6 V	1.6 mm	167 MHz	14 mm	Not Qualified	75497472 bit	3.135 V	PIPELINED ARCHITECTURE	e3	40	260		20 mm	3.4 ns
CY7C1472V25-200AXC	Infineon Technologies	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		4194304 words	COMMON	2.5	1.8/2.5,2.5	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	4MX18	4M	2.38 V	0 Cel	MATTE TIN	QUAD	R-PQFP-G100	3	2.625 V	1.6 mm	200 MHz	14 mm	Not Qualified	75497472 bit	2.375 V	PIPELINED ARCHITECTURE	e3	40	260		20 mm	3 ns
MCM64Z836ZP8.5R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	250 mA	262144 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	2.3 V	0 Cel		BOTTOM	R-PBGA-B119	1	2.7 V	2.4 mm		14 mm	Not Qualified	9437184 bit	2.3 V					.01 Amp	22 mm	8.5 ns
MCM64Z836ZP8.5	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	250 mA	262144 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	2.3 V	0 Cel		BOTTOM	R-PBGA-B119	1	2.7 V	2.4 mm		14 mm	Not Qualified	9437184 bit	2.3 V					.01 Amp	22 mm	8.5 ns
MCM64Z916ZP11	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	2.3 V	0 Cel		BOTTOM	R-PBGA-B119	1	2.7 V	2.4 mm		14 mm	Not Qualified	9437184 bit	2.3 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE				.01 Amp	22 mm	11 ns
MCM63Z916ZP15R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel		BOTTOM	R-PBGA-B119		3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE					22 mm	15 ns
MCM63Z836ZP8.5R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY, LOW PROFILE, FINE PITCH			.65 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM	R-PBGA-B119		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE					20 mm	8.5 ns
MCM63Z737TQ10	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		128KX36	128K		0 Cel		QUAD	R-PQFP-G100		3.465 V	1.6 mm		14 mm		4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE					20 mm	10 ns
MCM63Z916TQ10	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel		QUAD	R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE					20 mm	10 ns
MCM63Z836TQ7	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		256KX36	256K		0 Cel		QUAD	R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE					20 mm	7 ns
MCM64Z918TQ7R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	300 mA	524288 words	COMMON	2.5	2.5	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX18	512K	2.3 V	0 Cel		QUAD	R-PQFP-G100	1	2.7 V	1.6 mm		14 mm	Not Qualified	9437184 bit	2.3 V					.01 Amp	20 mm	7 ns
MCM63Z918ZP8R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel		BOTTOM	R-PBGA-B119		3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE					22 mm	8 ns
MCM63Z834TQ15R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words	COMMON	3.3	2.5/3.3,3.3	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel		QUAD	R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE					20 mm	15 ns
MCM63Z918TQ8	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK			1.27 mm	70 Cel		512KX18	512K		0 Cel		QUAD	R-PQFP-G100		3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE					22 mm	8 ns
MCM64Z916ZP10	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	2.3 V	0 Cel		BOTTOM	R-PBGA-B119	1	2.7 V	2.4 mm		14 mm	Not Qualified	9437184 bit	2.3 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE				.01 Amp	22 mm	10 ns
MCM63Z736TQ100R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		128KX36	128K		0 Cel		QUAD	R-PQFP-G100		3.465 V	1.6 mm		14 mm		4718592 bit	3.135 V	PIPELINED ARCHITECTURE					20 mm	5 ns
MCM63Z737TQ10R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		128KX36	128K		0 Cel		QUAD	R-PQFP-G100		3.465 V	1.6 mm		14 mm		4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE					20 mm	10 ns
MCM63Z736TQ143	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		128KX36	128K		0 Cel		QUAD	R-PQFP-G100		3.465 V	1.6 mm		14 mm		4718592 bit	3.135 V	PIPELINED ARCHITECTURE					20 mm	4 ns
MCM64Z836TQ8R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	250 mA	262144 words	COMMON	2.5	2.5	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX36	256K	2.3 V	0 Cel		QUAD	R-PQFP-G100	1	2.7 V	1.6 mm		14 mm	Not Qualified	9437184 bit	2.3 V					.01 Amp	20 mm	8 ns
MCM63Z819TQ11R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	FLATPACK, LOW PROFILE			.65 mm	70 Cel		256KX18	256K		0 Cel		QUAD	R-PQFP-G100		3.465 V	1.6 mm		14 mm		4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE					20 mm	11 ns
MCM64Z834TQ11R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words	COMMON	2.5	2.5	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX36	256K	2.3 V	0 Cel		QUAD	R-PQFP-G100	1	2.7 V	1.6 mm		14 mm	Not Qualified	9437184 bit	2.3 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE				.01 Amp	20 mm	11 ns
MCM64Z834ZP11	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	2.3 V	0 Cel		BOTTOM	R-PBGA-B119	1	2.7 V	2.4 mm		14 mm	Not Qualified	9437184 bit	2.3 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE				.01 Amp	22 mm	11 ns
MCM64Z916TQ11	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words	COMMON	2.5	2.5	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX18	512K	2.3 V	0 Cel		QUAD	R-PQFP-G100	1	2.7 V	1.6 mm		14 mm	Not Qualified	9437184 bit	2.3 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE				.01 Amp	20 mm	11 ns
MCM63Z834ZP11R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel		BOTTOM	R-PBGA-B119		3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE					22 mm	11 ns
MCM64Z918ZP7R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	300 mA	524288 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	2.3 V	0 Cel		BOTTOM	R-PBGA-B119	1	2.7 V	2.4 mm		14 mm	Not Qualified	9437184 bit	2.3 V					.01 Amp	22 mm	7 ns
MCM63Z916TQ15R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel		QUAD	R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE					20 mm	15 ns
MCM63Z916ZP10	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel		BOTTOM	R-PBGA-B119		3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE					22 mm	10 ns
MCM64Z918TQ7	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	300 mA	524288 words	COMMON	2.5	2.5	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX18	512K	2.3 V	0 Cel		QUAD	R-PQFP-G100	1	2.7 V	1.6 mm		14 mm	Not Qualified	9437184 bit	2.3 V					.01 Amp	20 mm	7 ns
MCM63Z736TQ100	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		128KX36	128K		0 Cel		QUAD	R-PQFP-G100		3.465 V	1.6 mm		14 mm		4718592 bit	3.135 V	PIPELINED ARCHITECTURE					20 mm	5 ns
MCM64Z834TQ15R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		262144 words	COMMON	2.5	2.5	36	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	256KX36	256K	2.3 V	0 Cel		QUAD	R-PQFP-G100	1	2.7 V	1.6 mm		14 mm	Not Qualified	9437184 bit	2.3 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE				.01 Amp	20 mm	15 ns
MCM63Z918TQ8R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK			1.27 mm	70 Cel		512KX18	512K		0 Cel		QUAD	R-PQFP-G100		3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE					22 mm	8 ns
MCM64Z916TQ10	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words	COMMON	2.5	2.5	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX18	512K	2.3 V	0 Cel		QUAD	R-PQFP-G100	1	2.7 V	1.6 mm		14 mm	Not Qualified	9437184 bit	2.3 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE				.01 Amp	20 mm	10 ns
MCM63Z916TQ11R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words	COMMON	3.3	2.5/3.3,3.3	18	FLATPACK, LOW PROFILE	QFP100,.63X.87	SRAMs	.65 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel		QUAD	R-PQFP-G100		3.465 V	1.6 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE					20 mm	11 ns
MCM64Z916ZP15R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	2.3 V	0 Cel		BOTTOM	R-PBGA-B119	1	2.7 V	2.4 mm		14 mm	Not Qualified	9437184 bit	2.3 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE				.01 Amp	22 mm	15 ns
MCM64Z916ZP15	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	2.3 V	0 Cel		BOTTOM	R-PBGA-B119	1	2.7 V	2.4 mm		14 mm	Not Qualified	9437184 bit	2.3 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE				.01 Amp	22 mm	15 ns
MCM63Z918ZP7R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel		BOTTOM	R-PBGA-B119		3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE					22 mm	7 ns
MCM64Z918ZP8R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	290 mA	524288 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	2.3 V	0 Cel		BOTTOM	R-PBGA-B119	1	2.7 V	2.4 mm		14 mm	Not Qualified	9437184 bit	2.3 V					.01 Amp	22 mm	8 ns
MCM64Z834ZP10R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words	COMMON	2.5	2.5	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	2.3 V	0 Cel		BOTTOM	R-PBGA-B119	1	2.7 V	2.4 mm		14 mm	Not Qualified	9437184 bit	2.3 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE				.01 Amp	22 mm	10 ns
MCM63Z737TQ11R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		128KX36	128K		0 Cel		QUAD	R-PQFP-G100		3.465 V	1.6 mm		14 mm		4718592 bit	3.135 V	FLOW-THROUGH ARCHITECTURE					20 mm	11 ns
MCM64Z916ZP10R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	2.3 V	0 Cel		BOTTOM	R-PBGA-B119	1	2.7 V	2.4 mm		14 mm	Not Qualified	9437184 bit	2.3 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE				.01 Amp	22 mm	10 ns
MCM63Z834ZP15R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel		BOTTOM	R-PBGA-B119		3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE					22 mm	15 ns
MCM63Z736TQ133R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	LQFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE			.65 mm	70 Cel		128KX36	128K		0 Cel		QUAD	R-PQFP-G100		3.465 V	1.6 mm		14 mm		4718592 bit	3.135 V	PIPELINED ARCHITECTURE					20 mm	4.2 ns
MCM63Z918TQ7R	NXP Semiconductors	ZBT SRAM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	FLATPACK			1.27 mm	70 Cel		512KX18	512K		0 Cel		QUAD	R-PQFP-G100		3.465 V	2.4 mm		14 mm	Not Qualified	9437184 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHTECTURE					22 mm	7 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.