Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
200 mA |
32768 words |
COMMON |
3.3 |
3.3 |
32 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
32KX32 |
32K |
3.14 V |
-40 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
R-PQFP-G100 |
3 |
3.63 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
1048576 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e0 |
20 |
225 |
.015 Amp |
20 mm |
5 ns |
|||||||||||
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
262144 words |
COMMON |
3.3 |
2.5,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
3.14 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
133 MHz |
Not Qualified |
4718592 bit |
3.135 V |
e0 |
20 |
225 |
.03 Amp |
4.2 ns |
|||||||||||||||
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
305 mA |
262144 words |
COMMON |
3.3 |
2.5,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
85 Cel |
3-STATE |
256KX18 |
256K |
3.13 V |
-40 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
150 MHz |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e0 |
20 |
225 |
.035 Amp |
3.8 ns |
||||||||||||||
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
295 mA |
131072 words |
COMMON |
3.3 |
2.5,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
150 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e0 |
20 |
225 |
.03 Amp |
20 mm |
3.8 ns |
|||||||||||
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
200 mA |
32768 words |
COMMON |
3.3 |
3.3 |
32 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
32KX32 |
32K |
3.14 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
3.63 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
1048576 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e0 |
20 |
225 |
.015 Amp |
20 mm |
5 ns |
|||||||||||
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
295 mA |
131072 words |
COMMON |
3.3 |
2.5,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
3.13 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
150 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e0 |
20 |
225 |
.03 Amp |
20 mm |
3.8 ns |
|||||||||||
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
305 mA |
131072 words |
COMMON |
3.3 |
2.5,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
-40 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
150 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e0 |
20 |
225 |
.035 Amp |
20 mm |
3.8 ns |
|||||||||||
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
180 mA |
32768 words |
COMMON |
3.3 |
3.3 |
32 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
32KX32 |
32K |
3.14 V |
-40 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
3.63 V |
1.6 mm |
83 MHz |
14 mm |
Not Qualified |
1048576 bit |
3.135 V |
e0 |
20 |
225 |
.015 Amp |
20 mm |
6 ns |
||||||||||||
|
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
180 mA |
32768 words |
COMMON |
3.3 |
3.3 |
32 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
85 Cel |
3-STATE |
32KX32 |
32K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.63 V |
83 MHz |
Not Qualified |
1048576 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.015 Amp |
6 ns |
|||||||||||||
|
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
200 mA |
32768 words |
COMMON |
3.3 |
3.3 |
32 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
32KX32 |
32K |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.63 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
1048576 bit |
3.135 V |
e3 |
30 |
260 |
.015 Amp |
20 mm |
5 ns |
|||||||||||
|
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
180 mA |
32768 words |
COMMON |
3.3 |
3.3 |
32 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
32KX32 |
32K |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.63 V |
1.6 mm |
83 MHz |
14 mm |
Not Qualified |
1048576 bit |
3.135 V |
e3 |
30 |
260 |
.015 Amp |
20 mm |
6 ns |
|||||||||||
|
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
200 mA |
32768 words |
COMMON |
3.3 |
3.3 |
32 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
32KX32 |
32K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.63 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
1048576 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.015 Amp |
20 mm |
5 ns |
||||||||||
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
512KX18 |
512K |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
20 mm |
3.8 ns |
||||||||||||||||||||||
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
512KX18 |
512K |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
20 mm |
4.2 ns |
||||||||||||||||||||||
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
512KX18 |
512K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
20 mm |
4.2 ns |
||||||||||||||||||||||
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
512KX18 |
512K |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
20 mm |
3.5 ns |
||||||||||||||||||||||
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
512KX18 |
512K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
20 mm |
3.8 ns |
||||||||||||||||||||||
Renesas Electronics |
CACHE SRAM |
100 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
GULL WING |
FLATPACK |
QUAD |
R-PQFP-G100 |
||||||||||||||||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
195 mA |
1048576 words |
COMMON |
2.5 |
2.5 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
1MX18 |
1M |
2.38 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
2.625 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
18874368 bit |
2.375 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.04 Amp |
20 mm |
4.2 ns |
||||||||||
|
Renesas Electronics |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
131072 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
e3 |
30 |
260 |
.04 Amp |
20 mm |
5 ns |
|||||||||||
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
36 |
FLATPACK |
70 Cel |
256KX36 |
256K |
0 Cel |
QUAD |
R-PQFP-G100 |
3.465 V |
9437184 bit |
3.135 V |
FLOW THROUGH ARCHITECTURE |
8 ns |
||||||||||||||||||||||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
16384 words |
5 |
16 |
FLATPACK |
70 Cel |
16KX16 |
16K |
0 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
262144 bit |
4.5 V |
12 ns |
|||||||||||||||||||||||||||||||
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
300 mA |
524288 words |
COMMON |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
85 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
-40 Cel |
QUAD |
R-PQFP-G100 |
133 MHz |
Not Qualified |
9437184 bit |
.015 Amp |
4.2 ns |
||||||||||||||||||||||||
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
255 mA |
131072 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
-40 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
100 MHz |
Not Qualified |
4718592 bit |
e0 |
20 |
225 |
.045 Amp |
5 ns |
||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
4096 words |
3.3 |
16 |
FLATPACK |
70 Cel |
4KX16 |
4K |
0 Cel |
QUAD |
S-PQFP-G100 |
3.6 V |
65536 bit |
3 V |
30 |
260 |
20 ns |
||||||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
260 mA |
4096 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
4KX16 |
4K |
2 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
30 |
260 |
.0015 Amp |
14 mm |
15 ns |
|||||||||||
|
Renesas Electronics |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
250 mA |
262144 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
256KX18 |
256K |
3.14 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
e3 |
30 |
260 |
.04 Amp |
20 mm |
5 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
370 mA |
8192 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
8KX16 |
8K |
2 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP |
e3 |
30 |
260 |
.004 Amp |
14 mm |
20 ns |
||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
200 mA |
32768 words |
COMMON |
2.5/3.3,3.3 |
32 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
32KX32 |
32K |
3.14 V |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
R-PQFP-G100 |
Not Qualified |
1048576 bit |
e0 |
.02 Amp |
5 ns |
|||||||||||||||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
340 mA |
65536 words |
COMMON |
5 |
5 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX18 |
64K |
4.5 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
1179648 bit |
4.5 V |
e3 |
30 |
260 |
.003 Amp |
14 mm |
15 ns |
|||||||||||
|
Renesas Electronics |
ZBT SRAM |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
360 mA |
131072 words |
COMMON |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
.65 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
166 MHz |
14 mm |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.045 Amp |
20 mm |
3.5 ns |
||||||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
320 mA |
524288 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.06 Amp |
20 mm |
4.2 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
131072 words |
3.3 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
MATTE TIN |
QUAD |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
1048576 bit |
3 V |
e3 |
14 mm |
15 ns |
||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
200 mA |
262144 words |
COMMON |
2.5/3.3,3.3 |
32 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
70 Cel |
3-STATE |
256KX32 |
256K |
3.14 V |
0 Cel |
QUAD |
R-PQFP-G100 |
100 MHz |
Not Qualified |
8388608 bit |
.015 Amp |
8.5 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
100 |
QFF |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
FLAT |
PARALLEL |
SYNCHRONOUS |
260 mA |
262144 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
256KX18 |
256K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-F100 |
3 |
3.465 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.035 Amp |
20 mm |
4.2 ns |
||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
195 mA |
8192 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
8KX18 |
8K |
3 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
147456 bit |
3 V |
e3 |
30 |
260 |
.005 Amp |
14 mm |
20 ns |
|||||||||||
|
Renesas Electronics |
STANDARD SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
255 mA |
131072 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
NO |
3-STATE |
128KX36 |
128K |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
1 |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
117 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
FLOW THROUGH ARCHITECTURE |
e3 |
30 |
260 |
YES |
.03 Amp |
20 mm |
7.5 ns |
|||||||
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
1048576 words |
COMMON |
2.5/3.3,3.3 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
85 Cel |
3-STATE |
1MX36 |
1M |
3.14 V |
-40 Cel |
QUAD |
R-PQFP-G100 |
167 MHz |
Not Qualified |
37748736 bit |
3.5 ns |
||||||||||||||||||||||||||
Renesas Electronics |
STANDARD SRAM |
INDUSTRIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
440 mA |
1048576 words |
COMMON |
2.5/3.3,3.3 |
32 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
85 Cel |
3-STATE |
1MX32 |
1M |
3.14 V |
-40 Cel |
QUAD |
R-PQFP-G100 |
Not Qualified |
33554432 bit |
.06 Amp |
2.8 ns |
|||||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
165 mA |
8192 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
8KX16 |
8K |
3 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
3 V |
e3 |
30 |
260 |
.0025 Amp |
14 mm |
25 ns |
|||||||||||
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
65536 words |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
64KX16 |
64K |
-40 Cel |
QUAD |
S-PQFP-G100 |
5.5 V |
1.6 mm |
14 mm |
1048576 bit |
4.5 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
14 mm |
20 ns |
||||||||||||||||||||||||||
|
Renesas Electronics |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
1048576 words |
2.5 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
1MX18 |
1M |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
2.625 V |
1.6 mm |
14 mm |
Not Qualified |
18874368 bit |
2.375 V |
FLOW-THROUGH ARCHITECTURE |
e3 |
20 mm |
7.5 ns |
|||||||||||||||||||||
|
Renesas Electronics |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
1048576 words |
2.5 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
1MX18 |
1M |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
2.625 V |
1.6 mm |
14 mm |
Not Qualified |
18874368 bit |
2.375 V |
PIPELINED ARCHITECTURE |
e3 |
20 mm |
3.5 ns |
|||||||||||||||||||||
|
Renesas Electronics |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
350 mA |
131072 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
166 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
e3 |
30 |
260 |
.04 Amp |
20 mm |
3.5 ns |
|||||||||||
|
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
256KX36 |
256K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
20 mm |
4.2 ns |
|||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
250 mA |
2048 words |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
70 Cel |
2KX16 |
2K |
0 Cel |
MATTE TIN |
QUAD |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
32768 bit |
4.5 V |
e3 |
14 mm |
90 ns |
|||||||||||||||||||||
|
Renesas Electronics |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
36 |
FLATPACK |
.65 mm |
70 Cel |
256KX36 |
256K |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
20 mm |
3.8 ns |
|||||||||||||||||||||
|
Renesas Electronics |
ZBT SRAM |
COMMERCIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
36 |
FLATPACK |
70 Cel |
256KX36 |
256K |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
9437184 bit |
3.135 V |
FLOW-THROUGH |
e3 |
30 |
260 |
8 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.