100 SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

70V27S20PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

3.3

16

FLATPACK

70 Cel

32KX16

32K

0 Cel

QUAD

S-PQFP-G100

3.6 V

524288 bit

3 V

20 ns

IDT71V67703S75PFGI

Renesas Electronics

CACHE SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

285 mA

262144 words

COMMON

3.3

3.3

36

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

85 Cel

3-STATE

256KX36

256K

3.14 V

-40 Cel

Matte Tin (Sn) - annealed

QUAD

R-PQFP-G100

3

3.465 V

1.6 mm

117 MHz

14 mm

Not Qualified

9437184 bit

3.135 V

FLOW-THROUGH ARCHITECTURE

e3

30

260

.07 Amp

20 mm

7.5 ns

IDT71V67703S85PFG

Renesas Electronics

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

190 mA

262144 words

COMMON

3.3

3.3

36

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

256KX36

256K

3.14 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

R-PQFP-G100

3

3.465 V

1.6 mm

87 MHz

14 mm

Not Qualified

9437184 bit

3.135 V

FLOW-THROUGH ARCHITECTURE

e3

30

260

.05 Amp

20 mm

8.5 ns

71V3576SA150PFG

Renesas Electronics

CACHE SRAM

COMMERCIAL

100

QFF

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

FLAT

PARALLEL

SYNCHRONOUS

131072 words

3.3

36

FLATPACK

70 Cel

128KX36

128K

0 Cel

MATTE TIN

QUAD

R-PQFP-F100

3

3.465 V

14 mm

Not Qualified

4718592 bit

3.135 V

PIPELINED ARCHITECTURE

e3

20 mm

3.8 ns

UPD44322183GF-A44

Renesas Electronics

STANDARD SRAM

COMMERCIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

2097152 words

COMMON

2.5/3.3,3.3

18

FLATPACK

QFP100,.63X.87

SRAMs

.635 mm

70 Cel

3-STATE

2MX18

2M

3.14 V

0 Cel

QUAD

R-PQFP-G100

225 MHz

Not Qualified

37748736 bit

2.8 ns

UPD4481181GF-C75Y-A

Renesas Electronics

ZBT SRAM

INDUSTRIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

225 mA

524288 words

COMMON

2.5

2.5

18

FLATPACK

QFP100,.63X.87

SRAMs

.635 mm

85 Cel

3-STATE

512KX18

512K

2.38 V

-40 Cel

QUAD

R-PQFP-G100

117 MHz

Not Qualified

9437184 bit

.015 Amp

7.5 ns

UPD44321322GF-A44

Renesas Electronics

ZBT SRAM

COMMERCIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

440 mA

1048576 words

COMMON

2.5/3.3,3.3

32

FLATPACK

QFP100,.63X.87

SRAMs

.635 mm

70 Cel

3-STATE

1MX32

1M

3.14 V

0 Cel

QUAD

R-PQFP-G100

225 MHz

Not Qualified

33554432 bit

.06 Amp

2.8 ns

71V3558XS166PFI8

Renesas Electronics

ZBT SRAM

INDUSTRIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

360 mA

262144 words

COMMON

3.3

3.3

18

FLATPACK

QFP100,.63X.87

SRAMs

.635 mm

85 Cel

3-STATE

256KX18

256K

3.14 V

-40 Cel

TIN LEAD

QUAD

R-PQFP-G100

3

166 MHz

Not Qualified

4718592 bit

e0

20

225

.045 Amp

3.5 ns

IDT71V546S133PFGI

Renesas Electronics

ZBT SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

310 mA

131072 words

COMMON

3.3

3.3

36

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

85 Cel

3-STATE

128KX36

128K

3.14 V

-40 Cel

Matte Tin (Sn) - annealed

QUAD

R-PQFP-G100

3

3.465 V

1.6 mm

133 MHz

14 mm

Not Qualified

4718592 bit

3.135 V

PIPELINED ARCHITECTURE

e3

30

260

.045 Amp

20 mm

4.2 ns

IDT71V3568S100PF

Renesas Electronics

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

262144 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

70 Cel

256KX18

256K

0 Cel

TIN LEAD

QUAD

R-PQFP-G100

3

3.465 V

1.6 mm

14 mm

Not Qualified

4718592 bit

3.135 V

e0

20 mm

5.33 ns

UPD4482361GF-C75Y-A

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

225 mA

262144 words

COMMON

2.5

2.5

36

FLATPACK

QFP100,.63X.87

SRAMs

.635 mm

85 Cel

3-STATE

256KX36

256K

3.14 V

-40 Cel

QUAD

R-PQFP-G100

117 MHz

Not Qualified

9437184 bit

.015 Amp

7.5 ns

70V261L35PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

16384 words

3.3

16

FLATPACK, LOW PROFILE, FINE PITCH

.5 mm

70 Cel

16KX16

16K

0 Cel

MATTE TIN

QUAD

S-PQFP-G100

3.6 V

1.6 mm

14 mm

262144 bit

3 V

e3

14 mm

35 ns

UPD4442321GF-A85

Renesas Electronics

STANDARD SRAM

COMMERCIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

280 mA

131072 words

COMMON

2.5/3.3,3.3

32

FLATPACK

QFP100,.63X.87

SRAMs

.635 mm

70 Cel

3-STATE

128KX32

128K

3.14 V

0 Cel

Tin/Lead (Sn/Pb)

QUAD

R-PQFP-G100

100 MHz

Not Qualified

4194304 bit

e0

.01 Amp

8.5 ns

UPD4482183GF-A60

Renesas Electronics

STANDARD SRAM

COMMERCIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

320 mA

524288 words

COMMON

3.3

3.3

18

FLATPACK

QFP100,.63X.87

SRAMs

.635 mm

70 Cel

3-STATE

512KX18

512K

3.14 V

0 Cel

QUAD

R-PQFP-G100

167 MHz

Not Qualified

9437184 bit

.015 Amp

3.5 ns

UPD4481362GF-C60Y

Renesas Electronics

ZBT SRAM

INDUSTRIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

320 mA

262144 words

COMMON

2.5

2.5

36

FLATPACK

QFP100,.63X.87

SRAMs

.635 mm

85 Cel

3-STATE

256KX36

256K

2.38 V

-40 Cel

QUAD

R-PQFP-G100

167 MHz

Not Qualified

9437184 bit

.015 Amp

3.5 ns

IDT70V25L15PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

185 mA

8192 words

COMMON

3.3

3.3

16

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

8KX16

8K

3 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G100

3

3.6 V

1.6 mm

14 mm

Not Qualified

131072 bit

3 V

e3

30

260

.0025 Amp

14 mm

15 ns

IDT71V658S200PF

Renesas Electronics

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

524288 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

70 Cel

512KX18

512K

0 Cel

TIN LEAD

QUAD

R-PQFP-G100

3

3.465 V

1.6 mm

14 mm

Not Qualified

9437184 bit

3.135 V

e0

20 mm

3.2 ns

IDT70V27S35PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

235 mA

32768 words

COMMON

3.3

3.3

16

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

32KX16

32K

3 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G100

3

3.6 V

1.6 mm

14 mm

Not Qualified

524288 bit

3 V

e3

30

260

.006 Amp

14 mm

35 ns

UPD44321182GF-A60

Renesas Electronics

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

360 mA

2097152 words

COMMON

2.5

2.5/3.3,3.3

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

2MX18

2M

3.14 V

0 Cel

TIN LEAD

QUAD

R-PQFP-G100

2.625 V

1.7 mm

167 MHz

14 mm

Not Qualified

37748736 bit

2.375 V

PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

e0

.06 Amp

20 mm

3.5 ns

IDT70V08S25PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

65536 words

3.3

8

FLATPACK, LOW PROFILE, FINE PITCH

.5 mm

70 Cel

64KX8

64K

0 Cel

MATTE TIN

QUAD

S-PQFP-G100

3

3.6 V

1.6 mm

14 mm

Not Qualified

524288 bit

3 V

SEMAPHORE

e3

14 mm

25 ns

IDT71V65703S75PFG8

Renesas Electronics

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

262144 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

256KX36

256K

0 Cel

MATTE TIN

QUAD

R-PQFP-G100

3

3.465 V

1.6 mm

14 mm

Not Qualified

9437184 bit

3.135 V

FLOW-THROUGH ARCHITECTURE

e3

20 mm

7.5 ns

UPD44321182GF-A50

Renesas Electronics

ZBT SRAM

COMMERCIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

410 mA

2097152 words

COMMON

2.5/3.3,3.3

18

FLATPACK

QFP100,.63X.87

SRAMs

.635 mm

70 Cel

3-STATE

2MX18

2M

3.14 V

0 Cel

QUAD

R-PQFP-G100

200 MHz

Not Qualified

37748736 bit

.06 Amp

3.2 ns

7008S35PFGB8

Renesas Electronics

MULTI-PORT SRAM

MILITARY

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

MIL-PRF-38535

GULL WING

PARALLEL

ASYNCHRONOUS

65536 words

5

8

FLATPACK

125 Cel

64KX8

64K

-55 Cel

QUAD

S-PQFP-G100

5.5 V

524288 bit

4.5 V

35 ns

IDT71V25761S166PFGI

Renesas Electronics

CACHE SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

85 Cel

128KX36

128K

-40 Cel

MATTE TIN

QUAD

R-PQFP-G100

3

3.465 V

1.6 mm

14 mm

Not Qualified

4718592 bit

3.135 V

PIPELINED ARCHITECTURE

e3

20 mm

3.5 ns

70V27S35PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

32768 words

3.3

16

FLATPACK

70 Cel

32KX16

32K

0 Cel

QUAD

S-PQFP-G100

3.6 V

524288 bit

3 V

35 ns

IDT71V65803S100PFG8

Renesas Electronics

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

250 mA

524288 words

COMMON

3.3

3.3

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

512KX18

512K

3.14 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

R-PQFP-G100

3

3.465 V

1.6 mm

100 MHz

14 mm

Not Qualified

9437184 bit

3.135 V

PIPELINED ARCHITECTURE

e3

30

260

.04 Amp

20 mm

5 ns

71V25761S183PFG8

Renesas Electronics

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

128KX36

128K

0 Cel

Matte Tin (Sn) - annealed

QUAD

R-PQFP-G100

3

3.465 V

1.6 mm

14 mm

4718592 bit

3.135 V

PIPELINED ARCHITECTURE

e3

30

260

20 mm

3.3 ns

71V3558XS200PFG

Renesas Electronics

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

400 mA

262144 words

COMMON

3.3

3.3

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

256KX18

256K

3.14 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

R-PQFP-G100

3

3.465 V

1.6 mm

200 MHz

14 mm

Not Qualified

4718592 bit

3.135 V

PIPELINED ARCHITECTURE

e3

30

260

.04 Amp

20 mm

3.2 ns

UPD4481362GF-C75Y

Renesas Electronics

ZBT SRAM

INDUSTRIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

300 mA

262144 words

COMMON

2.5

2.5

36

FLATPACK

QFP100,.63X.87

SRAMs

.635 mm

85 Cel

3-STATE

256KX36

256K

2.38 V

-40 Cel

QUAD

R-PQFP-G100

133 MHz

Not Qualified

9437184 bit

.015 Amp

4.2 ns

71V67603S166PFG

Renesas Electronics

STANDARD SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

340 mA

262144 words

COMMON

3.3

3.3

36

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

256KX36

256K

3.14 V

0 Cel

MATTE TIN

QUAD

R-PQFP-G100

3

3.465 V

1.6 mm

166 MHz

14 mm

Not Qualified

9437184 bit

3.135 V

PIPELINED ARCHITECTURE

e3

30

260

.05 Amp

20 mm

3.5 ns

71V3558XS166PFI

Renesas Electronics

ZBT SRAM

INDUSTRIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

360 mA

262144 words

COMMON

3.3

3.3

18

FLATPACK

QFP100,.63X.87

SRAMs

.635 mm

85 Cel

3-STATE

256KX18

256K

3.14 V

-40 Cel

TIN LEAD

QUAD

R-PQFP-G100

3

166 MHz

Not Qualified

4718592 bit

e0

20

225

.045 Amp

3.5 ns

IDT71V632ZS6PF

Renesas Electronics

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

65536 words

3.3

32

FLATPACK, LOW PROFILE

.65 mm

70 Cel

64KX32

64K

0 Cel

TIN LEAD

QUAD

R-PQFP-G100

3

3.63 V

1.6 mm

14 mm

Not Qualified

2097152 bit

3.135 V

PIPELINED ARCHITECTURE

e0

20 mm

IDT7027L15PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

LFQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

325 mA

32768 words

COMMON

5

5

16

FLATPACK, LOW PROFILE, FINE PITCH

QFP100,.63SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

32KX16

32K

4.5 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G100

3

5.5 V

1.6 mm

14 mm

Not Qualified

524288 bit

4.5 V

e3

30

260

.005 Amp

14 mm

15 ns

IDT71V2546S100PFG

Renesas Electronics

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

128KX36

128K

0 Cel

MATTE TIN

QUAD

R-PQFP-G100

3

3.465 V

1.6 mm

14 mm

Not Qualified

4718592 bit

3.135 V

PIPELINED ARCHITECTURE

e3

20 mm

5 ns

71V65803ZS133PFGI

Renesas Electronics

ZBT SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

320 mA

524288 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

85 Cel

512KX18

512K

-40 Cel

MATTE TIN

QUAD

R-PQFP-G100

3

3.465 V

1.6 mm

14 mm

Not Qualified

9437184 bit

3.135 V

BURST COUNTER

e3

20 mm

4.2 ns

71V2556S100PFG8

Renesas Electronics

ZBT SRAM

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

250 mA

131072 words

COMMON

3.3

36

FLATPACK, LOW PROFILE

QFP100,.63X.87

.65 mm

70 Cel

3-STATE

128KX36

128K

3.14 V

0 Cel

MATTE TIN

QUAD

R-PQFP-G100

3

3.465 V

1.6 mm

100 MHz

14 mm

4718592 bit

3.135 V

PIPELINED ARCHITECTURE

e3

30

260

.04 Amp

20 mm

5 ns

IDT71T75802S150PFG

Renesas Electronics

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

215 mA

1048576 words

COMMON

2.5

2.5

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

1MX18

1M

2.38 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

R-PQFP-G100

3

2.625 V

1.6 mm

150 MHz

14 mm

Not Qualified

18874368 bit

2.375 V

PIPELINED ARCHITECTURE

e3

30

260

.04 Amp

20 mm

3.8 ns

71V65603150PFGI

Renesas Electronics

ZBT SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

262144 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

85 Cel

256KX36

256K

-40 Cel

MATTE TIN

QUAD

R-PQFP-G100

3

3.465 V

1.6 mm

14 mm

Not Qualified

9437184 bit

3.135 V

PIPELINED ARCHITECTURE

e3

20 mm

3.8 ns

UPD4482183GF-A50Y-A

Renesas Electronics

STANDARD SRAM

INDUSTRIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

400 mA

524288 words

COMMON

3.3

3.3

18

FLATPACK

QFP100,.63X.87

SRAMs

.635 mm

85 Cel

3-STATE

512KX18

512K

3.14 V

-40 Cel

QUAD

R-PQFP-G100

200 MHz

Not Qualified

9437184 bit

.015 Amp

3.1 ns

71V67803150PFGI

Renesas Electronics

CACHE SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

524288 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

85 Cel

512KX18

512K

-40 Cel

MATTE TIN

QUAD

R-PQFP-G100

3

3.465 V

1.6 mm

14 mm

Not Qualified

9437184 bit

3.135 V

PIPELINED ARCHITECTURE

e3

20 mm

3.8 ns

UPD431232LGF-8

Renesas Electronics

STANDARD SRAM

COMMERCIAL

100

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

250 mA

32768 words

COMMON

3.3

3.3

32

FLATPACK

QFP100,.63X.87

SRAMs

.635 mm

70 Cel

3-STATE

32KX32

32K

3.1 V

0 Cel

Tin/Lead (Sn/Pb)

QUAD

R-PQFP-G100

66 MHz

Not Qualified

1048576 bit

e0

.002 Amp

8 ns

IDT71V3557S80PFG8

Renesas Electronics

CACHE SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

131072 words

3.3

36

FLATPACK, LOW PROFILE

.65 mm

70 Cel

128KX36

128K

0 Cel

MATTE TIN

QUAD

R-PQFP-G100

3

3.465 V

1.6 mm

14 mm

Not Qualified

4718592 bit

3.135 V

FLOW-THROUGH ARCHITECTURE

e3

20 mm

8 ns

IDT71T75802S150PFG8

Renesas Electronics

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

215 mA

1048576 words

COMMON

2.5

2.5

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

1MX18

1M

2.38 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

R-PQFP-G100

3

2.625 V

1.6 mm

150 MHz

14 mm

Not Qualified

18874368 bit

2.375 V

PIPELINED ARCHITECTURE

e3

30

260

.04 Amp

20 mm

3.8 ns

71V3558S166PFGI

Renesas Electronics

ZBT SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

360 mA

262144 words

COMMON

3.3

3.3

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

85 Cel

3-STATE

256KX18

256K

3.14 V

-40 Cel

Matte Tin (Sn) - annealed

QUAD

R-PQFP-G100

3

3.465 V

1.6 mm

166 MHz

14 mm

Not Qualified

4718592 bit

3.135 V

e3

30

260

.045 Amp

20 mm

3.5 ns

71V67803Z133PFGI

Renesas Electronics

CACHE SRAM

INDUSTRIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

524288 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

85 Cel

512KX18

512K

-40 Cel

MATTE TIN

QUAD

R-PQFP-G100

3

3.465 V

1.6 mm

14 mm

Not Qualified

9437184 bit

3.135 V

PIPELINED ARCHITECTURE

e3

20 mm

4.2 ns

IDT71V65803S133PFG

Renesas Electronics

ZBT SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

300 mA

524288 words

COMMON

3.3

3.3

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

3-STATE

512KX18

512K

3.14 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

R-PQFP-G100

3

3.465 V

1.6 mm

133 MHz

14 mm

Not Qualified

9437184 bit

3.135 V

BURST COUNTER

e3

30

260

.04 Amp

20 mm

4.2 ns

IDT70P246L55BYGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

100

BGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

4096 words

1.8

16

GRID ARRAY

85 Cel

4KX16

4K

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

S-PBGA-B100

3

1.9 V

Not Qualified

65536 bit

1.7 V

e1

30

260

55 ns

71V3579S85PFG

Renesas Electronics

STANDARD SRAM

COMMERCIAL

100

LQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

180 mA

262144 words

COMMON

3.3

3.3

18

FLATPACK, LOW PROFILE

QFP100,.63X.87

SRAMs

.65 mm

70 Cel

NO

3-STATE

256KX18

256K

3.14 V

0 Cel

MATTE TIN

QUAD

1

R-PQFP-G100

3

3.465 V

1.6 mm

87 MHz

14 mm

Not Qualified

4718592 bit

3.135 V

FLOW THROUGH ARCHITECTURE

e3

30

260

YES

.03 Amp

20 mm

8.5 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.