Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
256KX36 |
256K |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
20 mm |
3.5 ns |
|||||||||||||||||||||
|
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
230 mA |
262144 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e3 |
30 |
260 |
.07 Amp |
20 mm |
8 ns |
||||||||||
|
Renesas Electronics |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
305 mA |
524288 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
150 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.05 Amp |
20 mm |
3.8 ns |
||||||||||
|
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
325 mA |
524288 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
150 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.07 Amp |
20 mm |
3.8 ns |
||||||||||
|
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
325 mA |
524288 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
150 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
30 |
260 |
.07 Amp |
20 mm |
3.8 ns |
||||||||||
|
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
285 mA |
524288 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
85 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
117 MHz |
Not Qualified |
9437184 bit |
e3 |
30 |
260 |
.07 Amp |
7.5 ns |
|||||||||||||||||
|
Renesas Electronics |
CACHE SRAM |
INDUSTRIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
210 mA |
262144 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
85 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
87 MHz |
Not Qualified |
9437184 bit |
3.135 V |
FLOW-THROUGH |
e3 |
30 |
260 |
.07 Amp |
8.5 ns |
|||||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
250 mA |
4096 words |
COMMON |
5 |
5 |
16 |
FLATPACK |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
4KX16 |
4K |
2 V |
-40 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
Not Qualified |
65536 bit |
e0 |
20 |
240 |
.004 Amp |
55 ns |
||||||||||||||||||
|
Infineon Technologies |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
240 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.63 V |
1.6 mm |
166 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
.04 Amp |
20 mm |
3.5 ns |
||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
250 mA |
4096 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
4KX16 |
4K |
2 V |
-40 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
4.5 V |
4K X 16 DUAL PORT SRAM |
e0 |
20 |
240 |
.004 Amp |
14 mm |
55 ns |
|||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
335 mA |
32768 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
32KX16 |
32K |
4.5 V |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
524288 bit |
4.5 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE |
e3 |
30 |
260 |
.01 Amp |
14 mm |
20 ns |
||||||||||
|
Integrated Silicon Solution |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
210 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
256KX18 |
256K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3.465 V |
1.6 mm |
200 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
10 |
260 |
.000075 Amp |
20 mm |
3.1 ns |
|||||||||||
|
Integrated Silicon Solution |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
220 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
256KX18 |
256K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
200 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
e3 |
10 |
260 |
.085 Amp |
20 mm |
3.1 ns |
|||||||||||
Integrated Device Technology |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
210 mA |
4096 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
4KX16 |
4K |
2 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
4.5 V |
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN |
e0 |
20 |
240 |
.0015 Amp |
14 mm |
55 ns |
|||||||||||
|
Renesas Electronics |
DUAL-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
65536 words |
3.3 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
70 Cel |
64KX8 |
64K |
0 Cel |
MATTE TIN |
QUAD |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
524288 bit |
3 V |
e3 |
260 |
14 mm |
15 ns |
||||||||||||||||||||||
|
Renesas Electronics |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
210 mA |
4096 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
4KX16 |
4K |
2 V |
0 Cel |
Matte Tin (Sn) - annealed |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
30 |
260 |
.0015 Amp |
14 mm |
55 ns |
|||||||||||
|
Integrated Silicon Solution |
STANDARD SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
1048576 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
1MX18 |
1M |
-40 Cel |
QUAD |
R-PQFP-G100 |
3.465 V |
1.6 mm |
14 mm |
18874368 bit |
3.135 V |
NOT SPECIFIED |
NOT SPECIFIED |
20 mm |
3 ns |
||||||||||||||||||||||||
|
Cypress Semiconductor |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
2097152 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
2MX36 |
2M |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
200 MHz |
14 mm |
Not Qualified |
75497472 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
20 mm |
3 ns |
||||||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
185 mA |
4096 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
4KX16 |
4K |
2 V |
-40 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
3 V |
FLOW-THROUGH |
e3 |
40 |
260 |
.00005 Amp |
14 mm |
25 ns |
||||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
265 mA |
32768 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
32KX16 |
32K |
2 V |
0 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
524288 bit |
4.5 V |
FLOW-THROUGH |
e4 |
40 |
260 |
.0015 Amp |
14 mm |
20 ns |
||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
1048576 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
1MX36 |
1M |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
37748736 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e4 |
260 |
20 mm |
||||||||||||||||||||||
|
Infineon Technologies |
QDR SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
220 mA |
262144 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
256KX36 |
256K |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
.04 Amp |
20 mm |
3 ns |
|||||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
175 mA |
4096 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
4KX16 |
4K |
2 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
3 V |
FLOW-THROUGH |
e3 |
40 |
260 |
.00005 Amp |
14 mm |
20 ns |
||||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
195 mA |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
2 V |
-40 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
1048576 bit |
3 V |
AUTOMATIC POWER-DOWN |
e3 |
40 |
260 |
.00005 Amp |
14 mm |
20 ns |
||||||||||
|
Cypress Semiconductor |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
475 mA |
1048576 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
1MX36 |
1M |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
250 MHz |
14 mm |
Not Qualified |
37748736 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
20 mm |
2.6 ns |
|||||||||||
Cypress Semiconductor |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
32 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
256KX32 |
256K |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
14 mm |
Not Qualified |
8388608 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e0 |
20 mm |
4.2 ns |
||||||||||||||||||||||
Cypress Semiconductor |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
165 mA |
4096 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
4KX16 |
4K |
2 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
3 V |
e0 |
.00005 Amp |
14 mm |
25 ns |
||||||||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
250 mA |
8192 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
8KX16 |
8K |
4.5 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
e3 |
40 |
260 |
.015 Amp |
14 mm |
25 ns |
|||||||||||
Rochester Electronics |
DUAL-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
16384 words |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
16KX16 |
16K |
-40 Cel |
QUAD |
S-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
262144 bit |
3 V |
14 mm |
25 ns |
|||||||||||||||||||||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
205 mA |
65536 words |
COMMON |
3.3 |
3.3 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
50 MHz |
14 mm |
Not Qualified |
524288 bit |
3 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
.00025 Amp |
14 mm |
25 ns |
|||||||||
Cypress Semiconductor |
STANDARD SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
275 mA |
131072 words |
COMMON |
3.3 |
3.3 |
24 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
128KX24 |
128K |
3 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.45 mm |
14 mm |
Not Qualified |
3145728 bit |
3 V |
e0 |
.015 Amp |
20 mm |
10 ns |
|||||||||||||||
|
Cypress Semiconductor |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
240 mA |
65536 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
32 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
64KX32 |
64K |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
166 MHz |
14 mm |
Not Qualified |
2097152 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
.04 Amp |
20 mm |
3.5 ns |
||||||||||
|
Cypress Semiconductor |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
2097152 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
2MX18 |
2M |
3.14 V |
0 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
133 MHz |
14 mm |
Not Qualified |
37748736 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e3 |
40 |
260 |
.12 Amp |
20 mm |
6.5 ns |
|||||||||||
Cypress Semiconductor |
CACHE SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
2097152 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
70 Cel |
2MX36 |
2M |
0 Cel |
MATTE TIN/NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
75497472 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3/e4 |
20 mm |
3 ns |
|||||||||||||||||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
VFBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
ASYNCHRONOUS |
60 mA |
8192 words |
COMMON |
1.8 |
1.8/3 |
16 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA100,10X10,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
8KX16 |
8K |
1.7 V |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
2 |
S-PBGA-B100 |
3 |
1.9 V |
1 mm |
6 mm |
Not Qualified |
131072 bit |
1.7 V |
ALSO OPERATES AT 2.5V AND 3V SUPPLY |
e1 |
20 |
260 |
.000006 Amp |
6 mm |
55 ns |
||||||||||
Cypress Semiconductor |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
265 mA |
65536 words |
COMMON |
5 |
5 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
4.5 V |
0 Cel |
TIN LEAD |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
524288 bit |
4.5 V |
INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE |
e0 |
.0015 Amp |
14 mm |
20 ns |
|||||||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
165 mA |
65536 words |
COMMON |
3.3 |
3.3 |
8 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
3 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
524288 bit |
3 V |
e3 |
40 |
260 |
.00005 Amp |
14 mm |
25 ns |
|||||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
305 mA |
4096 words |
COMMON |
5 |
5 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
4KX18 |
4K |
2 V |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
73728 bit |
4.5 V |
e4 |
40 |
260 |
.0015 Amp |
14 mm |
15 ns |
|||||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
165 mA |
4096 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
4KX16 |
4K |
2 V |
0 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
65536 bit |
3 V |
FLOW-THROUGH |
e3 |
40 |
260 |
.00005 Amp |
14 mm |
25 ns |
||||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
290 mA |
8192 words |
COMMON |
5 |
5 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
8KX16 |
8K |
4.5 V |
-40 Cel |
MATTE TIN |
QUAD |
2 |
S-PQFP-G100 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
131072 bit |
4.5 V |
e3 |
40 |
260 |
.015 Amp |
14 mm |
25 ns |
|||||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
65536 words |
COMMON |
3.3 |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
64KX16 |
64K |
2 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
1048576 bit |
3 V |
AUTOMATIC POWER-DOWN |
e4 |
40 |
260 |
.00005 Amp |
14 mm |
15 ns |
|||||||||||
|
Cypress Semiconductor |
MULTI-PORT SRAM |
INDUSTRIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
195 mA |
65536 words |
COMMON |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
85 Cel |
3-STATE |
64KX18 |
64K |
2 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
2 |
S-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
1179648 bit |
3 V |
AUTOMATIC POWER-DOWN |
e4 |
40 |
260 |
.00005 Amp |
14 mm |
20 ns |
||||||||||
Cypress Semiconductor |
MULTI-PORT SRAM |
COMMERCIAL |
100 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
300 mA |
4096 words |
COMMON |
5 |
5 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP100,.63SQ,20 |
SRAMs |
.5 mm |
70 Cel |
3-STATE |
4KX18 |
4K |
4.5 V |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
2 |
S-PQFP-G100 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
73728 bit |
4.5 V |
FLOW-THROUGH OR PIPELINED ARCHITECTURE |
e0 |
.0005 Amp |
14 mm |
25 ns |
||||||||||||||
|
Infineon Technologies |
CACHE SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
205 mA |
131072 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
FLOW-THROUGH ARCHITECTURE |
e3 |
40 |
260 |
.04 Amp |
20 mm |
8 ns |
||||||||||
Cypress Semiconductor |
ZBT SRAM |
COMMERCIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
131072 words |
COMMON |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
70 Cel |
3-STATE |
128KX36 |
128K |
3.14 V |
0 Cel |
TIN LEAD |
QUAD |
R-PQFP-G100 |
3 |
3.465 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.135 V |
e0 |
.03 Amp |
20 mm |
5 ns |
|||||||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
180 mA |
524288 words |
COMMON |
3.3 |
2.5/3.3,3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP100,.63X.87 |
SRAMs |
.65 mm |
85 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
166 MHz |
14 mm |
Not Qualified |
9437184 bit |
3.135 V |
PIPELINED ARCHITECTURE |
e3 |
40 |
260 |
.04 Amp |
20 mm |
3.5 ns |
||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
180 mA |
524288 words |
COMMON |
2.5/3.3,3.3 |
18 |
FLATPACK |
QFP100,.63X.87 |
SRAMs |
.635 mm |
85 Cel |
3-STATE |
512KX18 |
512K |
3.14 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
R-PQFP-G100 |
3 |
166 MHz |
Not Qualified |
9437184 bit |
e4 |
40 |
260 |
.04 Amp |
3.5 ns |
||||||||||||||||||
|
Infineon Technologies |
ZBT SRAM |
INDUSTRIAL |
100 |
LQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
3.3 |
36 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
512KX36 |
512K |
-40 Cel |
PURE TIN |
QUAD |
R-PQFP-G100 |
3 |
3.6 V |
1.6 mm |
14 mm |
18874368 bit |
3.135 V |
PIPELINED ARCHITECTURE |
260 |
20 mm |
3.4 ns |
SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.
One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.
One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.