119 SRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
K7P161812M-HC38	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	550 mA	1048576 words	COMMON	3.3	1.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	3.15 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.45 V	2.55 mm	263.15 MHz	14 mm	Not Qualified	18874368 bit	3.15 V		e0				.15 Amp	22 mm	3.8 ns
K7A161809A-HI20	Samsung	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		3.3		18	GRID ARRAY			1.27 mm	85 Cel		1MX18	1M		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	18874368 bit	3.135 V		e0					22 mm	3.1 ns
K7A803600A-HC14	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	390 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.465 V		138 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	SELF-TIMED WRITE CYCLE	e0				.05 Amp	22 mm	3.8 ns
K7P403611M-HC200	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel		BOTTOM		R-PBGA-B119		3.45 V			14 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED ARCHITECTURE						22 mm	2.5 ns
K7N163601A-HI13	Samsung	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	GRID ARRAY			1.27 mm	85 Cel		512KX36	512K		-40 Cel		BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE						22 mm	4.2 ns
K7B801825M-HC85T	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	330 mA	524288 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel		BOTTOM		R-PBGA-B119				100 MHz		Not Qualified	9437184 bit							.13 Amp		8.5 ns
KM718FV4011AH-40	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		R-PBGA-B119		3.45 V			14 mm	Not Qualified	4718592 bit	3.15 V							22 mm	2 ns
K7M163625A-HI65	Samsung	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	GRID ARRAY			1.27 mm	85 Cel		512KX36	512K		-40 Cel		BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	18874368 bit	3.135 V	FLOW-THROUGH ARCHITECTURE						22 mm	6.5 ns
KM736S8011H-5000	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM		R-PBGA-B119		2.65 V	2.2 mm		14 mm		9437184 bit	2.35 V	PIPELINED ARCHITECTURE, SEATED HT-CALCULATED						22 mm	2.5 ns
K7M163625M-HC85	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	320 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.465 V		100 MHz	14 mm	Not Qualified	18874368 bit	3.135 V		e0				.03 Amp	22 mm	8.5 ns
K7B161825A-HI750	Samsung	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		3.3		18	GRID ARRAY			1.27 mm	85 Cel		1MX18	1M		-40 Cel		BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	18874368 bit	3.135 V							22 mm	7.5 ns
K7N163601A-HI22	Samsung	ZBT SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	GRID ARRAY			1.27 mm	85 Cel		512KX36	512K		-40 Cel		BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE						22 mm	2.8 ns
K7N801845A-HC13T	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	330 mA	524288 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	2.38 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3			133 MHz		Not Qualified	9437184 bit			e0				.01 Amp		4.2 ns
K7A323600M-HC25	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.465 V		250 MHz	14 mm	Not Qualified	37748736 bit	3.135 V	PIPELINED ARCHITECTURE	e0					22 mm	2.6 ns
K7P803622B-HC160	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM		R-PBGA-B119		3.45 V			14 mm	Not Qualified	9437184 bit	3.15 V	PIPELINED ARCHITECTURE						22 mm	3 ns
KM736S8011H-5A	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	262144 words	COMMON	2.5	1.5,2.5	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	2.35 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		2.65 V			14 mm	Not Qualified	9437184 bit	2.35 V		e0				.06 Amp	22 mm	2 ns
KM718FV4011H-600	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		R-PBGA-B119		3.45 V	2.2 mm		14 mm		4718592 bit	3.15 V	PIPELINED ARCHITECTURE, SEATED HT-CALCULATED						22 mm	3 ns
K7P163666M-HC330	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		36	GRID ARRAY			1.27 mm	70 Cel		512KX36	512K		0 Cel		BOTTOM		R-PBGA-B119		2.63 V	2.55 mm		14 mm		18874368 bit	2.37 V	SEATED HGT-CALCULATED						22 mm	1.5 ns
K7P801822B-HC200	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel		BOTTOM		R-PBGA-B119		3.45 V			14 mm	Not Qualified	9437184 bit	3.15 V	PIPELINED ARCHITECTURE						22 mm	2.5 ns
KM736S849H-10	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel		BOTTOM		R-PBGA-B119		2.625 V			14 mm	Not Qualified	9437184 bit	2.375 V	SELF-TIMED WRITE CYCLE; POWER DOWN OPTION						22 mm	5 ns
KM718V087H-10	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		1MX18	1M		0 Cel		BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	18874368 bit	3.135 V							22 mm	10 ns
K7P401866A-H2700	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		R-PBGA-B119		2.65 V			14 mm	Not Qualified	4718592 bit	2.35 V	ALSO REQUIRES 1.5V I/O SUPPLY						22 mm
KM718FV4011AH-36	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	262144 words	COMMON	3.3	1.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.15 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.45 V			14 mm	Not Qualified	4718592 bit	3.15 V		e0				.06 Amp	22 mm	1.9 ns
K7P801811B-HC30T	Samsung	LATE-WRITE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	570 mA	524288 words	COMMON		1.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.15 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119						Not Qualified	9437184 bit			e0				.07 Amp		1.6 ns
K7M161825A-HC75	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B119		3.465 V		117 MHz	14 mm	Not Qualified	18874368 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0				.01 Amp	22 mm	7.5 ns
K7N161801A-HC22	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		1MX18	1M		0 Cel		BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE						22 mm	2.8 ns
KM736V989H-72	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	380 mA	524288 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.465 V		138 MHz	14 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.03 Amp	22 mm	4 ns
K7B163625A-HI650	Samsung	CACHE SRAM	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		36	GRID ARRAY			1.27 mm	85 Cel		512KX36	512K		-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	18874368 bit	3.135 V		e0					22 mm	6.5 ns
K7B323625M-HC75	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX36	1M	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.465 V		117 MHz	14 mm	Not Qualified	37748736 bit	3.135 V		e0					22 mm	7.5 ns
KM718FV4011H-44	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	650 mA	262144 words	COMMON	3.3	1.5,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX18	256K	3.15 V	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B119		3.45 V			14 mm	Not Qualified	4718592 bit	3.15 V		e0			YES	.06 Amp	22 mm	2.2 ns
K7N803601A-HC160	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	9437184 bit	3.135 V							22 mm	3.5 ns
K7A161800M-HL14	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	380 mA	1048576 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	1MX18	1M	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B119	3			138 MHz		Not Qualified	18874368 bit			e1				.03 Amp		4 ns
K7N321801M-HC150	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		2MX18	2M		0 Cel		BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	37748736 bit	3.135 V	PIPELINED ARCHITECTURE						22 mm	3.8 ns
KM718V989G-50	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	490 mA	524288 words	COMMON		2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	512KX18	512K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119	3			200 MHz		Not Qualified	9437184 bit			e0				.03 Amp		3.1 ns
K7P803611M-HC200	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.45 V			14 mm	Not Qualified	9437184 bit	3.15 V	PIPELINED ARCHITECTURE	e0					22 mm	2.5 ns
KM736V887H-7	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	262144 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.465 V		117 MHz	14 mm	Not Qualified	9437184 bit	3.135 V	SELF-TIMED WRITE CYCLE; POWER DOWN OPTION	e0				.03 Amp	22 mm	7.5 ns
K7N801845B-HC16	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		2.625 V			14 mm	Not Qualified	9437184 bit	2.375 V		e0					22 mm	3.5 ns
K7B803625B-HC65	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		256KX36	256K		0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	9437184 bit	3.135 V		e0					22 mm	6.5 ns
K7N321845M-HC16	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	360 mA	2097152 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	2MX18	2M	2.38 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		2.625 V		167 MHz	14 mm	Not Qualified	37748736 bit	2.375 V	PIPELINED ARCHITECTURE	e0				.06 Amp	22 mm	3.5 ns
K7N321845M-HC20	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	410 mA	2097152 words	COMMON	2.5	2.5	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	2MX18	2M	2.38 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		2.625 V		200 MHz	14 mm	Not Qualified	37748736 bit	2.375 V	PIPELINED ARCHITECTURE	e0				.06 Amp	22 mm	3.2 ns
K7N803601A-EC10	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	350 mA	262144 words	COMMON		2.5/3.3,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel		BOTTOM		R-PBGA-B119				100 MHz		Not Qualified	9437184 bit							.05 Amp		5 ns
K7M321825M-HC75	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words	COMMON	3.3	2.5/3.3,3.3	18	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	2MX18	2M	3.14 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.465 V		118 MHz	14 mm	Not Qualified	37748736 bit	3.135 V	FLOW-THROUGH ARCHITECTURE	e0				.01 Amp	22 mm	7.5 ns
KM718S949H-67	Samsung	ZBT SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		2.5		18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel		BOTTOM		R-PBGA-B119		2.625 V			14 mm	Not Qualified	9437184 bit	2.375 V	SELF-TIMED WRITE CYCLE; POWER DOWN OPTION						22 mm	3.8 ns
KM718V087H-9	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		1MX18	1M		0 Cel		BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	18874368 bit	3.135 V							22 mm	9 ns
KM736V8011H-5A	Samsung	STANDARD SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	262144 words	COMMON	3.3	1.5,3.3	36	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	3.14 V	0 Cel		BOTTOM		R-PBGA-B119		3.45 V			14 mm	Not Qualified	9437184 bit	3.15 V						.06 Amp	22 mm	2 ns
K7P403623B-H70	Samsung	STANDARD SRAM	COMMERCIAL	119	HBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	290 mA	131072 words	COMMON	3.3	2.5/3.3,3.3	36	GRID ARRAY, HEAT SINK/SLUG	BGA119,7X17,50	SRAMs	1.27 mm	70 Cel	3-STATE	128KX36	128K	3.15 V	0 Cel	TIN LEAD	BOTTOM		R-PBGA-B119		3.45 V	2.2 mm		14 mm	Not Qualified	4718592 bit	3.15 V	PIPELINED ARCHITECTURE, SEATED HT-CALCULATED	e0				.12 Amp	22 mm	7 ns
K7A801800A-HC100	Samsung	CACHE SRAM	COMMERCIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		524288 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		512KX18	512K		0 Cel		BOTTOM		R-PBGA-B119		3.465 V			14 mm	Not Qualified	9437184 bit	3.135 V	PIPELINED ARCHITECTURE						22 mm	4.5 ns
K6R3024V1D-HI12	Samsung	SRAM MODULE	INDUSTRIAL	119	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	130 mA	131072 words	COMMON	3.3	3.3	24	GRID ARRAY	BGA119,7X17,50	SRAMs	1.27 mm	85 Cel	3-STATE	128KX24	128K	3 V	-40 Cel		BOTTOM		R-PBGA-B119		3.6 V			14 mm	Not Qualified	3145728 bit	3 V			30	240		.015 Amp	22 mm	12 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.